Regulador linear de tensão em tecnologia HV-CMOS

Atualmente, assiste-se na nossa sociedade a um recurso e uso massivo de equipamentos eletrónicos portáteis. Este facto, aliado à competitividade de mercado, exigiu o desenvolvimento desses equipamentos com o intuito de melhorar a sua gestão de potência e, obter, consequentemente, maior autonomia e rendimento. Assim, na gestão de potência de um SoC são os reguladores de tensão que assumem um papel de extrema importância. O trabalho realizado ao longo da presente dissertação pressupõe o projeto de um regulador linear de tensão do tipo LDO em tecnologia HV-CMOS, capaz de suportar tensões de entrada de 12V com vista à alimentação de blocos funcionais RF-CMOS com 3,3V e uma corrente de 100mA. Foi implementado através do processo CMOS de 0.35μm de 50V da Austria Micro Systems. A corrente de quiescente do regulador linear de tensão que determina a eficiência de corrente é de 120,22μA. Possui uma eficiência de corrente de 99,88% e um rendimento de 82,46% quando a tensão mínima de entrada é utilizada. O regulador linear de tensão possui uma tensão de dropout de 707mV. A estabilidade do sistema é mantida mesmo com transições de carga de 10μA para 100mA. O regulador possui um tempo de estabelecimento inferior a 2,4μs e uma variação da tensão de saída relativamente ao seu valor nominal inferior a 18mV, ambos para o pior caso. Porém, este regulador possui um undershoot e um overshoot de +- 1,85V.

Silicon isotopes of sediment core GeoB2107-3

The supply of nutrients to the low-latitude thermocline is largely controlled by intermediate-depth waters formed at the surface in the high southern latitudes. Silicic acid is an essential macronutrient for diatoms, which are responsible for a significant portion of marine carbon export production. Changes in ocean circulation, such as those observed during the last deglaciation, would influence the nutrient composition of the thermocline and, therefore, the relative abundance of diatoms in the low latitudes. Here we present the first record of the silicic acid content of the Atlantic over the last glacial cycle. Our results show that at intermediate depths of the South Atlantic, the silicic acid concentration was the same at the Last Glacial Maximum (LGM) as it is today, overprinted by high silicic acid pulses that coincided with abrupt changes in ocean and atmospheric circulation during Heinrich Stadials and the Younger Dryas. We suggest these pulses were caused by changes in intermediate water formation resulting from shifts in the subpolar hydrological cycle, with fundamental implications for the nutrient supply to the Atlantic.

Silicon isotope ratios of ODP Site 177-1089 and sediment core E33-22

Reconstruction of nutrient concentrations in the deep Southern Ocean has produced conflicting results. The cadmium/calcium (Cd/Ca) data set suggests little change in nutrient concentrations during the last glacial period, whereas the carbon isotope data set suggests that nutrient concentrations were higher. We determined the silicon isotope composition of sponge spicules from the Atlantic and Pacific sectors of the Southern Ocean and found higher silicic acid concentrations in the Pacific sector during the last glacial period. We propose that this increase results from changes in the stoichiometric uptake of silicic acid relative to nitrate and phosphate by diatoms, thus facilitating a redistribution of nutrients across the Pacific and Southern Oceans. Our results are consistent with the global Cd/Ca data set and support the silicic acid leakage hypothesis.

Silicon carbide whiskers,

"Based on research supported by the United States Air Force through the Nonmetallic Materials Laboratory, Directorate of materials & Processes, Aeronautical Systems Division, under Contract no. AF 33 (616)-7005."

Sequential purification and crystal growth for the production of low cost silicon substrates : quarterly technical progress report no. 1, September 15-December 31, 1979 /

"February 1980."

Photovoltaic mechanisms in polycrystalline thin film silicon solar cells : quarterly technical progress report no. 1, July 30-October 31, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."

Sequential purification and crystal growth for the production of low cost silicon substrates : annual report, September 15, 1979-September 14, 1980 /

"Work Performed Under Contract No. AC02-77CH00178."