Dead-time minimisation using active voltage control gate drive for high-power IGBT converters

High-power converters usually need longer dead-times than their lower-power counterparts and a lower switching frequency. Also due to the complicated assembly layout and severe variations in parasitics, in practice the conventional dead-time specific adjustment or compensation for high-power converters is less effective, and usually this process is time-consuming and bespoke. For general applications, minimising or eliminating dead-time in the gate drive technology is a desirable solution. With the growing acceptance of power electronics building blocks (PEBB) and intelligent power modules (IPM), gate drives with intelligent functions are in demand. Smart functions including dead time elimination/minimisation can improve modularity, flexibility and reliability. In this paper, a dead-time minimisation using Active Voltage Control (AVC) gate drive is presented. © 2012 IEEE.

Evaluation and modeling of lanthanum diffusion in TiN/La 2O 3/HfSiON/SiO 2/Si high-k stacks

In this study, TiN/La 2O 3/HfSiON/SiO 2/Si gate stacks with thick high-k (HK) and thick pedestal oxide were used. Samples were annealed at different temperatures and times in order to characterize in detail the interaction mechanisms between La and the gate stack layers. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) measurements performed on these samples show a time diffusion saturation of La in the high-k insulator, indicating an La front immobilization due to LaSiO formation at the high-k/interfacial layer. Based on the SIMS data, a technology computer aided design (TCAD) diffusion model including La time diffusion saturation effect was developed. © 2012 American Institute of Physics.

Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates

Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the 111 direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, such as twin defects and stacking faults, is found for high growth rates. By systematically manipulating the AsH 3 (group-V) and TMGa (group-III) precursor flow rates, it is found that the TMGa flow rate has the most significant effect on the nanowire quality. After capping the minimal tapering and twin-free GaAs NWs with an AlGaAs shell, long exciton lifetimes (over 700ps) are obtained for high TMGa flow rate samples. It is observed that the Ga adatom concentration significantly affects the growth of GaAs NWs, with a high concentration and rapid growth leading to desirable characteristics for optoelectronic nanowire device applications including improved morphology, crystal structure and optical performance. © 2012 IOP Publishing Ltd.

Designing folding rings using polynomial continuation

© 2014 by ASME. Two types of foldable rings are designed using polynomial continuation. The first type of ring, when deployed, forms regular polygons with an even number of sides and is designed by specifying a sequence of orientations which each bar must attain at various stages throughout deployment. A design criterion is that these foldable rings must fold with all bars parallel in the stowed position. At first, all three Euler angles are used to specify bar orientations, but elimination is also used to reduce the number of specified Euler angles to two, allowing greater freedom in the design process. The second type of ring, when deployed, forms doubly plane-symmetric (irregular) polygons. The doubly symmetric rings are designed using polynomial continuation, but in this example a series of bar end locations (in the stowed position) is used as the design criterion with focus restricted to those rings possessing eight bars.

Reduction in microcystin concentrations in large and shallow lakes: Water and sediment-interface contributions

Blooms of cyanobacteria, or blue-greens, are known to produce chemicals, such as microcystins, which can be toxic to aquatic and terrestrial organisms. Although previous studies have examined the fate of microcystins in freshwater lakes, primary elimination pathways and factors affecting degradation and loss have not been fully explained. The goal of the present study was to explore sources of algal toxins and investigate the distribution and biodegradation of microcystins in water and sediment through laboratory and field analyses. Water and sediment samples were collected monthly from several locations in Lake Taihu from February 2005 to January 2006. Samples were analyzed for the presence of microcystin. Water and sediment were also used in laboratory studies to determine microcystin degradation rates by spiking environmental samples with known concentrations of the chemical and observing concentration changes over time. Some water samples were found to efficiently degrade microcystins. Microcystin concentrations dropped faster in water collected immediately above lake sediment (overlying water). Degradation in sediments was higher than in water. Based on spatial distribution analyses of microcystin in Lake Taihu, higher concentrations (relative to water concentrations) of the chemical were found in lake sediments. These data suggest that sediments play a critical role in microcystin degradation in aquatic systems. The relatively low levels of microcystins found in the environment are most likely due to bacterial biodegradation. Sediments play a crucial role as a source (to the water column) of bio-degrading bacteria and as a carbon-rich environment for bacteria to proliferate and metabolize microcystin and other biogenic toxins produced by cyanobacteria. These, and other, data provide important information that may be applied to management strategies for improvement of water quality in lakes, reservoirs and other water bodies. (C) 2007 Elsevier Ltd. All rights reserved.

Top down scale-up of semiconducting nanostructures for large area electronics

In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1× 1 cm2 area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme. © 2014 IEEE.

Lean product development in practice: Insights from 4 companies

This paper aims to elucidate practitioners' understanding and implementation of Lean in Product Development (LPD). We report on a workshop held in the UK during 2012. Managers and engineers from four organizations discussed their understanding of LPD and their ideas and practice regarding management and assessment of value and waste. The study resulted in a set of insights into current practice and lean thinking from the industry perspective. Building on this, the paper introduces a balanced value and waste model that can be used by practitioners as a checklist to identify issues that need to be considered when applying LPD. The main results indicate that organizations tend to focus on waste elimination rather than value enhancement in LPD. Moreover, the lean metrics that were discussed by the workshop participants do not link the strategic level with the operational one, and poorly reflect the value and waste generated in the process. Future directions for research are explored, and include the importance of a balanced approach considering both value and waste when applying LPD, and the need to link lean metrics with value and waste levels.

Photodegradation dynamics of pure microcystin variants with illumination of fixed wavelength UV-lights

Photolysis of microcystins by UV irradiation and the effects of different environmental factors on efficiency of UV degradation were studied. The results indicated that the rates of the photolytical degradation reactions of microcystin-LR and RR-follow pseudo-first-order kinetic process. The results also showed that the concentrations of two microcystin variants decreased significantly by UV-C Irradiation; the wavelength and intensitiy of UV irradiation are two very important factors affecting the rate of degradation; temperature and pH value could also affect the half life of degradation rates. When irradiated by weaker UV-Iight, isomerization could be detected in the course of photolytical degradation. The concentrations of two isomers transformed from microcystin-LR reached its maximum at the third minute and decreased with the time afterwards. To simulate photolysis of microcystins in the field water body, microcystins with low concentration were used. It was found that UV-C illumination was capable of decomposing over 95% of microcystins within 40 min. In the presence of humic substances the photodecomposition slowed down to a certain extent. These results are valuable in using UV irradiation for elimination microcystins from raw water.

Structure-function analysis of the inverted terminal repeats of the Sleeping Beauty transposon

Translocation of Sleeping Beauty (SB) transposon requires specific binding of SB transposase to inverted terminal repeats (ITRs) of about 230 bp at each end of the transposon, which is followed by a cut-and-paste transfer of the transposon into a target DNA sequence. The ITRs contain two imperfect direct repeats (DRs) of about 32 bp. The outer DRs are at the extreme ends of the transposon whereas the inner DRs are located inside the transposon, 165-166 bp from the outer DRs. Here we investigated the roles of the DR elements in transposition. Although there is a core transposase-binding sequence common to all of the DRs, additional adjacent sequences are required for transposition and these sequences vary in the different DRs. As a result, SB transposase binds less tightly to the outer DRs than to the inner DRs. Two DRs are required in each ITR for transposition but they are not interchangeable for efficient transposition. Each DR appears to have a distinctive role in transposition. The spacing and sequence between the DR elements in an ITR affect transposition rates, suggesting a constrained geometry is involved in the interactions of SB transposase molecules in order to achieve precise mobilization. Transposons are flanked by TA dinucleotide base-pairs that are important for excision; elimination of the TA motif on one side of the transposon significantly reduces transposition while loss of TAs on both flanks of the transposon abolishes transposition. These findings have led to the construction of a more advanced transposon that should be useful in gene transfer and insertional mutagenesis in vertebrates. (C) 2002 Elsevier Science Ltd. All rights reserved.

Evidence of host blood feeding by the monogenean, Ancyrocephalus mogurndae (Monogenea : Ancyrocephalidae) from the gills of the mandarin fish, Siniperca chuatsi

By examining iron contents, it is demonstrated that the monogenean Ancyrocephalus mogurndae (Yamaguti, 1940) feeds on the blood of its host, the mandarin fish Siniperca chuatsi (Basilewsky). The iron content and then the quantity of blood necessary to produce this amount of iron are found different in young and fully-matured worms. Young worms contain higher levels of iron and estimated amount of blood. It is suggested that A. mogurndae may start to feed on host blood as attached on gills, and the amount of blood ingested by young worms may vary from 0.01 to 1.00 mu l before reproduction. The difference between young and fully-matured worms may be accounted for by the elimination of haematin and change of food composition in matured worms and may also be affected by reproduction. Experimental infections of the monogenean may provide supportive information for explaining the difference, and further studies should also examine the effect of immune components in host blood ol mucus on the intestines of the parasite.

FATE OF 2 PHENYLBENZOYLUREA INSECTICIDES IN AN ALGAE CULTURE SYSTEM (SCENEDESMUS-SUBSPICATUS)

The bioaccumulation, elimination and degradation of C-14-labelled diflubenzuron (DFB) and of 1-(2-chlorobenzoyl)-3-(4-chlorophenyl)urea (CCU) was studied in a laboratory algae culture system of scenedesmus subspicatus. Algae were exposed at an initial concentration of 200 mug/l for seven days. Neither substance had an inhibitory effect on the growth of algae. The half life of DFB and CCU was 3 and 1 days, respectively, as measured by HPLC. The distribution of C-14 between medium and algae was measured. In the case of DFB radioactivity in algae increased steadily and levelled off at approximately 60 % after 5 days. Due to algae growth BCF values decreased from 4310 to 889 for DFB and from 6719 to 304 for CCU during the exposure period. The relationship between algae density and bioconcentration could be correlated by an adsorption isotherm. Elimination of both compounds was rapid during the first hours.

Lineshape Analysis of the Beat Signal Between Optical Carrier and Delayed Sidebands

This paper presents the lineshape analysis of the beat signal between the optical carrier and the shifted and delayed side-bands produced by sinusoidal amplitude modulation. It is shown that the beat signal has a typical lineshape with a very narrow delta-peak superposed on a quasi-Lorentzian profile. Theoretical explanation for the appearance of this peak has been given based on optical spectral structure constructed by a large number of optical wave trains. It is predicted that the delta-peak is originated from the beat between the wave trains in the carrier and those in the delayed sidebands when their average coherence length is longer than the delay line. Experiments carried out using different delay lines clearly show that the delta-peak is always located at the modulation frequency and decreases with the increasing delay line. Our analysis explicitly indicates that the linewidth is related to the observation time. It is also suggested that the disappearance of the delta-peak can be used as the criterion of coherence elimination.

Investigation of mode radiation loss for microdisk resonators with pedestals by FDTD technique

Mode radiation loss for microdisk resonators with pedestals is investigated by three-dimensional (3D) finite-difference time-domain (FDTD) technique. For the microdisk with a radius of 1 mu m, a thickness of 0.2 mu m, and a refractive index of 3.4, on a pedestal with a refractive index of 3.17, the mode quality (Q) factor of the whispering-gallery mode (WGM) quasi-TE7,1 first increases with the increase of the radius of the pedestal, and then quickly decreases as the radius is larger than 0.75 mu m. The mode radiation loss is mainly the vertical radiation loss induced by the mode coupling between the WGM and vertical radiation mode in the pedestal, instead of the scattering loss around the perimeter of the round pedestal. The WG M can keep the high Q factor when the mode coupling is forbidden.

Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer

This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMA1 ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress. (C) 2004 Elsevier B.V. All rights reserved.

A Raman scattering study of GaAs: As films lifted off GaAs substrate

We performed Raman scattering investigations on low-temperature-grown (LTG) films of GaAs that had been lifted off the GaAs substrate. The Raman measurements unambiguously show the effects of excess arsenic on phonon scattering from LTG films of GaAs. The larger downwards shift of the LO phonon frequency for unannealed free-standing films is explained by invoking the elimination of mismatch strain. The Raman signal due to precipitates of elemental arsenic in the annealed GaAs : As films is determined. It is confirmed that the arsenic clusters formed by rapid thermal annealing are mainly amorphous, giving rise a broad Raman peak in the range 180-260 cm(-1).