989 resultados para Nanometric displacement measurement


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Novel designs for two-axis, high-resolution, monolithic inertial sensors are presented in this paper. Monolithic, i.e., joint-less single-piece compliant designs are already common in micromachined inertial sensors such as accelerometers and gyroscopes. Here, compliant mechanisms are used not only to achieve de-coupling between motions along two orthogonal axes but also to amplify the displacements of the proof-mass. Sensitivity and resolution capabilities are enhanced because the amplified motion is used for sensing the measurand. A particular symmetric arrangement of displacement-amplifying compliant mechanisms (DaCMs) leads to de-coupled and amplified motion. An existing DaCM and a new topology-optimized DaCM are presented as a building block in the new arrangement. A spring-mass-lever model is presented as a lumped abstraction of the new arrangement. This model is useful for arriving at the optimal parameters of the DaCM and for performing system-level simulation. The new designs improved the performance by a factor of two or more.

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In this paper, the development of a novel multipoint pressure sensor system suitable for the measurement of human foot pressure distribution has been presented. It essentially consists of a matrix of cantilever sensing elements supported by beams. Foil type strain gauges have been employed for the conversion of foot pressure in to proportional electrical response. Information on the signal conditioning circuitry used is given. Also, the results obtained on the performance of the system are included.

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We propose and demonstrate a technique for electrical detection of polarized spins in semiconductors in zero applied magnetic fields. Spin polarization is generated by optical injection using circularly polarized light which is modulated rapidly using an electro-optic cell. The modulated spin polarization generates a weak time-varying magnetic field which is detected by a sensitive radio-frequency coil. Using a calibrated pickup coil and amplification electronics, clear signals were obtained for bulk GaAs and Ge samples from which an optical spin orientation efficiency of 4.8% could be determined for Ge at 1342 nm excitation wavelength. In the presence of a small external magnetic field, the signal decayed according to the Hanle effect, from which a spin lifetime of 4.6 +/- 1.0 ns for electrons in bulk Ge at 127 K was extracted.