967 resultados para Er3 -doped phosphate glass


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By using inorganic salts as raw materials and citric acid as complexing agent, alpha-Zn-3(PO4)(2) and Eu3+ doped alpha-Zn-3(PO4)(2) phosphor powders were prepared by a citrate-gel process. X-ray diffraction, (XRD), TG - DTA, FT - IR and luminescence excitation and emission spectra were used to characterize the resulting products. The results of XRD reveal that the powders begin to crystallize at 500 degreesC and pure alpha-Zn-3(PO4)(2) phase is obtained at 800 degreesC. And the results of XRD reveal that Eu3+ exists Lis EoPO(4) ill the powder. In the phosphor powders, the Eu3+ shows its characteristic red-orange (592 nm, D-5(0) - F-7(1)) emission and has no quenching concentration.

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Erbium-doped BaF2 nanoparticles were prepared from the microemulsion of cetyl trimethyl ammonium bromide (CTAB), n-butanol, n-octane and water. The X-ray diffraction (XRD) patterns were indexed to a pure BaF2 cubic phase. Transmission electron microscopy (TEM) images showed that BaF2 products were monodispersed with 15-20 nm in size at the dopant concentration of 0.06 mol%. At higher dopant concentration, there was no significant increase in particle size, but more polydispersed. Photoluminescence (PL) properties of the final products were examined. We can observe fluorescence of Er3+ around 1540 nm and with the increase of dopant concentration, the fluorescent intensity increases.

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CaWO4 phosphor films doped with rare-earth ions (Eu3+, Dy-,(3+) Sm3+, Er3+) were prepared by the Pechini sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, thermogravimetric and differential thermal analysis, atomic force microscopy, and photoluminescence spectra, as well as lifetimes, were used to characterize the resulting powders and films. The results of the XRD analysis indicated that the films began to crystallize at 400degreesC and that the crystallinity increased with elevation of the annealing temperature. The doped rare-earth ions showed their characteristic emissions in crystalline CaWO4 phosphor films due to energy transfer from WO42- groups to them. Both the lifetimes and PL intensities of the doped rare-earth ions increased with increasing annealing temperature, from 500 to 900degreesC, and the optimum concentrations for Eu3+, Dy3+, Sm3+, Er3+ were determined as 30, 1.5, 1.5, 0.5 at.% of Ca2+ in CaWO4 films annealed at 900degreesC, respectively.

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Nanocrystalline Gd2O3:A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 degreesC and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 mum). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 degreesC, and the optimum concentrations for Eu3+, Dy3+, sm(3+), Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively.

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Rhodamine B (RB)-doped organic-inorganic silica films and their patterning were fabricated by a sol-gel process combined with a soft lithography. The resulted film samples were characterized by atomic force microscope (AFM), optical microscope and UV/Vis absorption and photoluminescence excitation and emission spectra. The effects of the concentration of the RB dye and heat treatment temperature on the optical properties of the hybrid silica films have been studied. Four kinds of patterning structures with film line widths of 5, 10, 20 and 50 mum have been obtained by micromolding in capillaries by a soft lithography technique. The RB-doped hybrid silica films present a red color, with an excitation and emission bands around 564 and 585 mum, respectively. With increasing the RB concentration, the emission intensity of the RB-doped hybrid silica films increases and the emission maximum presents a red shift. The emission intensity of the films decreases with increasing the heat treatment temperatures.

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Rare-earth (Eu3+, Tb3+)-doped Ca2Y8(SiO4)(6)O-2 luminescent thin films were dip-coated on silicon and quartz glass substrates through a sol-gel route. X-ray diffraction (XRD), scanning electron microscopy (SEM) and luminescence excitation and emission spectra as well as luminescence decays were used to characterize the resultant films. The results of XRD reveal that these films remain amorphous below 700 degreesC, begin to crystallize at 800 degreesC, and crystallize completely around 1000 degreesC with an oxyapatite structure. The grain structure of the film can be seen clearly from SEM micrographs, where particles with various shape and average size of 250 nm can be resolved. The Eu3+ and Tb3+ ions show their characteristic red (D-5(0)-F-7(2)) and green (D-5(4)-F-7(5)) emission in the films with a quenching concentration of 10 and 6 mol% (of Y3+), respectively. The lifetime of Eu-3divided by increases with the heat treatment temperature front 700 to 1100 degreesC.

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Nanocrystalline YVO4:A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with soft lithography. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM) and optical microscopy, UV/vis transmission and absorption spectra, photoluminescence (PL) spectra, and lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 400 degreesC and the crystallinity increased with the increase of annealing temperatures. Transparent nonpatterned phosphor films were uniform and crack-free, which mainly consisted of grains with an average size of 90 nm. Patterned gel and crystalline phosphor film bands with different widths (5-60 mum) were obtained. Significant shrinkage and a few defects were observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline YVO4 phosphor films because of an efficient energy transfer from vanadate groups to them. The Sm3+ and Er3+ ions also showed upconversion luminescence in a YVO4 film host. Both the lifetimes and PL intensity of the rare earth ions increased with increasing annealing temperature from 400 to 800 degreesC, and the optimum concentration for Eu3+ was determined to be 7 mol % and those for Dy3+, Sm3-, and Er3+ were 2 Mol % of Y3- in YVO4 films, respectively.

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Rare-earth and lead ions (Eu3+, Tb3+, Dy3+, Pb2+) doped Ca2Y8 (SiO4)(6)O-2 and Ca2Gd8(SiO4)(6)O-2 thin films have been dip- coated on silicon and quartz glass substrates through the sol- gel route. X- Ray diffraction (XRD), TG- DTA, scanning electron microscopy (SEM), atomic force microscopy (AFM), FT- IR and luminescence excitation and emission spectra as well as luminescence decays were used to characterize the resulting films. The results of XRD reveal that these films remain amorphous below 700 degreesC, begin to crystallize at 800 degreesC and crystallize completely around 1000 degreesC with an oxyapatite structure. The grain structure of the film can be seen clearly from SEM and AFM micrographs, where particles with various shapes and average size of 250 nm can be resolved. Eu3+ and Tb3+ show their characteristic red (D-5(0)-F-7(2)) and green (D-5(4) - F-7(5)) emission in the films with a quenching concentration of 10 and 6 mol% (of Y3+), respectively. The lifetime and emission intensity of Eu3+ increase with the temperature treatment from 700 to 1100 degreesC, while those of Tb3+ show a maximum at 800 degreesC. Energy transfer phenomena have been observed by activating the oxyapatite film host- lattice Ca2Gd8(SiO4)(6)O-2 with Tb3+ (Dy3+). In addition, Pb2+ can sensitize the Gd3+ sublattice in Ca2Gd8(SiO4)(6)O-2.

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In this presentation, nanocrystalline YVO4:A (A=Eu3+, Dy3+, SM3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography (micro-molding in capillaries). XRD, FT-IR, AFM and optical microscope, absorption spectra, photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 400 degrees C and the crystallinity increased with the increase of annealing temperatures. Transparent nonpattemed phosphor films were uniform and crack free, which mainly consisted of grains with an average size of 90nm. Patterned crystalline phosphor film bands with different widths (5-30 mu m) were obtained. The doped rare earth ions (A) showed their characteristic emission in crystalline YVO4 phosphor films due to an efficient energy transfer from vanadate groups to them. The Sm3+ and Er3+ ions also showed upconversion luminescence in YVO4 film host. The optimum concentration for Eu3+ was determined to be 7 mol% and those for Dy3+, Sm3+, Er3+ were 2 Mol% of Y3+ in YVO4 films, respectively.

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Eu3+-activated calcium silicate (CaO-SiO2:Eu3+) luminescent films were prepared by the sol-gel method. The structural evolution of the film was studied by X-ray powder diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM), and the luminescence properties of the phosphor films were investigated as a function of heat treatment temperature. The XRD study indicates that a kilchoanite phase forms in the film sintered at 800 degreesC, which is different from that in gel powder treated under the same conditions. The SEM results show that the film thickness decreases and the particles in the film become smaller with increasing heat treatment temperature. The CaO-SiO2:Eu film shows the characteristic emission of Eu3+ under UV excitation, with the Eu3+ D-5(0)-->F-7(2) band (616 nm) being the most prominent. A large difference in the Eu3+ lifetime is observed between the film samples treated at 500 and 700 degreesC (or above). Concentration quenching occurs when the Eu3+ doping concentration is above 6 mol% of Ca2+ in the film.

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TiO2 gel doped with fluorescein was prepared by a sol-gel method, and the fluorescence of fluorescein and its effect on formation of the: gel were investigated with absorption, fluorescence, IR spectroscopies and TG-DTA analysis. The results indicated that FL incorporated into TiO2 gel had exhibited big changes compared to that in ethanol solution both in the absorption and the emission spectra, and the formation of TiO2 gel was influenced greatly by FL.

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The inorganic/polymer hybrid films with good luminescent properties have been obtained by the sol - gel process via incorporating the polymer component doped with rare earth complexes. These films exhibit good toughness and transparency. Their fluorescence spectra and lifetimes indicate that they all have the characteristic luminescence of the central rare earth ions. The lifetimes of these films are longer than those of pure complexes. TEM have showed that the rare earth complexes are dispersed homogeneously in SiO2/PVB interpenetratiny networks, and the dispersed size is between 20 and 30 nn.

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Bright blue electroluminescent devices have been fabricated using poly (N-vinylcarbazole) (PVK) doped with perylene as the emissive layer, poly(p-phenylenevinylene) (PPV) as the hole-transporting layer, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD), tris(8-hydroxyquinoline)aluminum (Alq(3)) as the electron-transporting layer, and Al as the cathode. A luminance of 700 cd/m(2) and a luminescent efficiency of 0.8% are achieved at a drive voltage of 36 V. In the experiment, it is found that the introduction of electron-transporting layer PBD has a great effect on the emissive color of the electroluminescent devices prepared by PVK doped with perylene. Yellow-green emission is observed from the device structure of glass substrate/indium-tin-oxide/PVK:perylene/Al. The possible emissive mechanisms are given. The effect of the transporting layer on the electroluminescence is also discussed. (C) 1997 Elsevier Science S.A.

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The luminescence properties of silica gels and silica gels doped with two rare earth complexes, Eu(TTA)(3) and Tb(o-CBA)(3) (TTA=thenoyltriffuocetate, o-CBA=o-chlorobenzoic acid) are reported and discussed. Pure silica gels show a blue luminescence, and the maximum excitation and emission wavelengths depend strongly on the solvents used. Both of the studied rare earth complexes exhibit the characteristic emissions of the rare earth ions in silica gels, i.e., Eu3+5D0-->F-7(J)(J=0,1,2,3,4), Tb3+5D4-->F-7(J)(J=3,4,5,6) transitions. Compared with the pure RE-complexes powder, the silica gels doped with RE-complexes show fewer emission lines of the rare earth ions. Furthermore the rare earth ion (Tb3+) presents a longer lifetime (1346 mu s) in silica gel doped with Tb(o-CBA)3 than in pure Tb((o-CBA)(3) powder (744 mu s). The reasons responsible for these results are discussed in the context.

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Organic light emitting diode devices employing organometallic Nd(9-hydroxyphenalen-1-one)(3) complexes as near infrared emissive dopants dispersed within poly(N-vinylcarbazole) (PVK) host matrices have been fabricated by spin-casting layers of the doped polymer onto glass/indium tin oxide (ITO)/3,4-polyethylene-dioxythiophene-polystyrene sulfonate (PEDOT) substrates. Room temperature electroluminescence, centered at similar to 1065 nm. was observed from devices top contacted by evaporated aluminum or calcium metal cathodes and was assigned to transitions between the F-4(3/2) -> I-4(11/2) levels of the Nd3+ ions. In particular, a near infrared irradiance of 8.5 nW/mm(2) and an external quantum efficiency of 0.007% was achieved using glass/ITO/PEDOT/PVK:Nd(9-hydroxyphenalen-1-one)(3)/Ca/Al devices. (c) 2005 Elsevier B.V. All rights reserved.