Relaxation and tunnelling of structural units within the LTO phase of La2CuO4

The anelastic relaxation (elastic energy loss and Young modulus) of nearly stoichiometric La2CuO4+delta with LTO structure was measured. Extraordinarily intense effects are present below room temperature in the elastic dynamic susceptibility, indicating relaxational dynamics of a relevant fraction of the lattice. The involved degrees of freedom are identified as rotations of the CuO6 octahedra. Two distinct processes are found at frequencies around 1 kKz: one is observed around 150 K and is characterized by a mean activation energy of 2800 K; the second one occurs below 30 K and is governed by atomic tunnelling. Two explanations are proposed for the faster process: i) formation of fluctuating LTT domains on a scale of few atomic cells; ii) the LTO phase is a dynamical Jahn-Teller phase with all the octahedra tunneling between two LTT-like tilts. In both cases there would be important implications regarding the mechanisms giving rise to charge nanophase separation and strong electron-phonon coupling.

A study of over-reflection in Hartmann flow

It is observed that Hartmann flow sustains wave propagation in its centre region for waves whose phase speed is less than the maximum flow speed. Similar to the previous observations it is found that viscous boundary layers around the critical level and at the wall replace the exponential regions and wave sinks required for over-reflection in the inviscid flow. The uniform magnetic field stabilizes the flow for small-wave-number disturbances along thez-direction. Over-reflection is confined to a few ranges of phase speeds for which the two boundary layers are close together rather than widely separated. These ranges correspond exactly to those for which unstable eigenmodes exist. Over-reflection is associated with a wave phase tilt opposite in direction to the shear.

Lateral periodicity in highly-strained (GaIn)As/Ga(PAs) superlattices investigated by X-ray scattering techniques

In this work we investigate the lateral periodicity of symmetrically strained (GaIn)As/GaAs/Ga(PAs)/GaAs superlattices by means of X-ray scattering techniques. The multilayers were grown by metalorganic Vapour phase epitaxy on (001)GaAs substrates, which were intentionally off-oriented towards the [011]-direction. The substrate off-orientation and the strain distribution was found to affect the structural properties of the superlattices inducing the generation of laterally ordered macrosteps. Several high-resolution triple-crystal reciprocal space maps, which were recorded for different azimuth angles in the vicinity of the (004) Bragg diffraction and contour maps of the specular reflected beam collected in the vicinity of the (000) reciprocal lattice point, are reported and discussed. The reciprocal space maps clearly show a two-dimensional periodicity of the X-ray peak intensity distribution which can be ascribed to the superlattice periodicity in the direction of the surface normal and to a lateral periodicity in a crystallographic direction coinciding with the miscut orientation. The distribution and correlation of the vertical as well as of the lateral interface roughness was investigated by specular reflectivity and diffuse scattering measurements. Our results show that the morphology of the roughness is influenced by the off-orientation angle and can be described by a 2-dimensional waviness.

CALCULATIONS OF THE EIGENVALUES OF PURE QUADRUPOLE INTERACTION IN MOSSBAUER-EFFECT STUDIES

Two approximate formulae to calculate the eigenvalues of pure quadrupole interaction in Mossbauer effect studies have been proposed and the eigenvalue coefficients in the formulae have been given for various excited states and ground states of the nucleus with different spin. All the eigenvalues of pure quadrupole interaction between both excited state and ground state of nucleus with spin I = 3/2 divided-by 9/2 and the electric-field gradient with different asymmetry parameter (eta = 0 divided-by 1.0) have been calculated by these formulae. The results show that the accuracies in all the calculations are more satisfactory or same in comparison with those obtained by the formula of Shenoy and Dunlap, especially when the asymmetry parameter of electric-field gradient is larger than 0.8 for the nucleus with spin I = 5/2.

Signal processing for molecular and cellular biological physics:an emerging field

Recent advances in our ability to watch the molecular and cellular processes of life in action-such as atomic force microscopy, optical tweezers and Forster fluorescence resonance energy transfer-raise challenges for digital signal processing (DSP) of the resulting experimental data. This article explores the unique properties of such biophysical time series that set them apart from other signals, such as the prevalence of abrupt jumps and steps, multi-modal distributions and autocorrelated noise. It exposes the problems with classical linear DSP algorithms applied to this kind of data, and describes new nonlinear and non-Gaussian algorithms that are able to extract information that is of direct relevance to biological physicists. It is argued that these new methods applied in this context typify the nascent field of biophysical DSP. Practical experimental examples are supplied.

Optical emission characteristics and mode transitions in low-frequency inductively coupled plasmas

An attempt was made to investigate the optical emission spectra of atomic, molecular, and ionic species in low-frequency, high-density ICP discharges in pure nitrogen, ar con gases, and gas mixtures Ar+H2, N2+Ar, and N2+H2. The excited species were identified by in situ optical emission intensity (OEI) measurements in the discharge chamber. In general, significant results were obtained.

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum wells with higher indium content grown by molecular-beam expitaxy

High structural and optical quality 1.3 mu m GaInNAs/GaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the GaIn0.425NAs/GaAs (6 nm/20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer. (C) 2005 American Institute of Physics.

Structural and optical properties of ZnO films on Si substrates using a gamma-Al2O3 buffer layer

High quality ZnO films have been successfully grown on a Si (100) substrate by metal organic chemical vapour deposition with a gamma-Al2O3 buffer. The crystal structure, surface morphology and optical properties of the ZnO films were characterized by x-ray diffraction, Raman spectroscopy, atomic force microscopy and photoluminescence (PL) spectroscopy. The propel-ties of the films with the Al2O3 buffer were improved in comparison with those of as-grown ZnO films. It is shown that the ZnO films with the gamma-Al2O3 buffer grown on Si (100) substrates have a highly-preferential c-axis (0002) orientation, a narrow (0002) peak, smooth surface morphology and better PL spectral properties. This demonstrates that the use of gamma-Al2O3/Si as a ZnO substrate is beneficial for reducing the residual stress for further growth of ZnO films, compared with the growth on bulk Si substrates.

Influence of InxGa1-xAs (0 <= x <= 0.3) cap layer on structural and optical properties of self-assembled InAs/GaAs quantum dots

Optical and structural properties of self-organized InAs/GaAs quantum dots (QDs) with InxGa1-xAs or GaAs cover layers grown by molecular beam epitaxy (MBE) have been characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM) and photoluminescence (PL) measurements. The TEM and AFM images show that the surface stress of the InAs QDs was suppressed by overgrowth of a InxGa1-xAs covering layer on the top of the QDs and the uniformity of the QDs preserved. PL measurements reveal that red shifts of the PL emission due to the reduction of the surface strain of the InAs islands was observed and the temperature sensitivity of the PL emission energy was suppressed by overgrowth of InxGa1-xAs layers compared to that by overgrowth of GaAs layers.

Structural and optical properties of self-assembled InAs/GaAs quantum dots covered by InxGa1-xAs (0 <= x <= 0.3)

Optical and structural investigations of InAs quantum dots (QDs) covered by InxGa1-xAs (0 less than or equal to x less than or equal to 0.3) overgrowth layer have been systematically reported. The decrease of strain in the growth direction of InAs quantum dots covered by InGaAs layer instead of GaAs is demonstrated by transmission electron microscopy experiments. In addition, the atomic force microscopy measurement shows that the surface of InAs islands with 3-nm-thick In0.2Ga0.8As becomes flatter. However, the InGaAs islands nucleate on the top of quantum dots during the process of InAs islands covered with In0.3Ga0.7As. The significant redshift of the photoluminescence peak energy and reduction of photoluminescence linewidth of InAs quantum dots covered by InGaAs are observed. The energy gap change of InAs QDs covered by InGaAs could be explained in terms of reducing strain, suppressing compositional mixing, and increasing island height. (C) 2000 American Institute of Physics. [S0021-8979(00)04018-4].

Structural and optical properties of distyrylbenzene derivative thin films

In order to understand the relationship between the molecular orientation and optical properties of oligophenylenevinylene film, oriented thin films of 1,4-di(p-methoxystyryl)benzene (DSB-1) and 1,4-di(p-methoxystyryl)-2,5-dimethoxybenzene (DSB-2) were fabricated on a potassium bromide (KBr) (001) surface by the vacuum-evaporation method. The structures and optical properties of DSB films have been investigated by transmission electron microscopy (TEM), atomic force microscopy (AFM) and polarized photoluminescence (PL) spectroscopy, respectively. DSB-1 molecules orient obliquely and/or parallel to the substrate surface depending on the substrate temperature. On the other hand, DSB-2 molecules tend to grow epitaxially with the molecular plane parallel to the substrate surface. The anisotropic molecular orientations represent the polarized PL. The epitaxial growth and molecular orientations observed by TEM and AFM at the local and microscopic scale are confirmed by polarized PL measurement on a macroscopic scale. (C) 1999 American Institute of Physics. [S0021-8979(99)01523-6].

Theory for Optical Absorption in Small Clusters: Dependence on Atomic Structure and Cluster Size

We present a theory which permits for the first time a detailed analysis of the dependence of the absorption spectrum on atomic structure and cluster size. Thus, we determine the development of the collective excitations in small clusters and show that their broadening depends sensitively on the tomic structure, in particular at the surface. Results for Hg_n^+ clusters show that the plasmon energy is close to its jellium value in the case of spherical-like structures, but is in general between w_p/ \wurzel{3} and w_p/ \wurzel{2} for compact clusters. A particular success of our theory is the identification of the excitations contributing to the absorption peaks.

Optical Properties and Charge-Transfer Excitations in Edge-Functionalized All-Graphene Nanojunctions

We investigate the optical properties of edge-fiinctionalized graphene nanosystems, focusing on the formation of junctions and charge-transfer excitons. We consider a class of graphene structures that combine the main electronic features of graphene with the wide tunability of large polycyclic aromatic hydrocarbons. By investigating prototypical ribbon-like systems, we show that, upon convenient choice of functional groups, low-energy excitations with remarkable charge-transfer character and large oscillator strength are obtained. These properties can be further modulated through an appropriate width variation, thus spanning a wide range in the low-energy region of the UV-vis spectra. Our results are relevant in view of designing all-graphene optoelectronic nanodevices, which take advantage of the versatility of molecular functionalization, together with the stability and the electronic properties of graphene nanostructures.

Solitons in atomic condensates, with optical lattices and field-induced dipole moments

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Optical Excitations and Field Enhancement in Short Graphene Nanoribbons

The optical excitations of elongated graphene nanoflakes of finite length are investigated theoretically through quantum chemistry semiempirical approaches. The spectra and the resulting dipole fields are analyzed, accounting in full atomistic details for quantum confinement effects, which are crucial in the nanoscale regime. We find that the optical spectra of these nanostructures are dominated at low energy by excitations with strong intensity, comprised of characteristic coherent combinations of a few single-particle transitions with comparable weight. They give rise to stationary collective oscillations of the photoexcited carrier density extending throughout the flake and to a strong dipole and field enhancement. This behavior is robust with respect to width and length variations, thus ensuring tunability in a large frequency range. The implications for nanoantennas and other nanoplasmonic applications are discussed for realistic geometries.