Trench insulated gate bipolar transistor - a high power switching device

This paper presents a comprehensive theoretical study of the Trench Insulated Gate Bipolar Transistors (TIGBT). Specific physical and geometrical effects, such as the accumulation layer injection, increased channel density, increased channel charge and transversal electric field modulation are discussed. The potential advantages of the Trench IGBT over its conventional planar variant are highlighted. It is concluded that the Trench IGBT is one of the most promising structures in the area of high voltage MOS-controllable switching devices.

Influence of ground anchors on topographic amplification at slope crests

One feature of earthquake loading in regions containing sloping ground is a marked increase in accelerations at the crests of slopes. Many field cases exist where such increased accelerations were measured. The observed increase in the amount and severity of observed building damage near the edge of cliff-type topographies has been attributed to the topographic amplification. To counter this, it has been shown that anchoring the soil mass responsible for this to the rest of the stable soil mass can reduce the amount of topographic amplification. In this study, dynamic centrifuge modelling will be used to identify the region affected by topographic amplification in a model slope. The soil accelerations recorded will be compared to those measured in a comparable model treated by anchors. In addition, the tension measured in the anchors will be examined in order to better understand how the anchors are transferring the loads and mitigating these amplifications. © 2010 Taylor & Francis Group, London.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.

Point injection in trench insulated gate bipolar transistor for ultra low losses

In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The "p-ring" and the "point-injection" type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT. © 2012 IEEE.

Properties of trench defects in InGaN/GaN quantum well structures

The structural and optical properties of trench defects, which are poorly understood yet commonly occurring defects observed on the surfaces of InGaN multiple quantum wells (MQW), are reported. These defects comprise near-circular trenches which enclose areas of MQW which give rise to a red shift in peak photoluminescence emission and a change in cathodoluminescence intensity with respect to the surrounding material. Atomic force microscopy shows that the height of trench-enclosed areas differs from that of the surrounding quantum well structure, and that trenches are unrelated to the commonly observed V-defects in InGaN films, despite being occasionally intersected by them. Cross-sectional electron microscopy analysis of trenches with raised centres suggests that the red shift in the observed cathodoluminescence peak emission may be due to the quantum wells being thicker in the trench-enclosed regions than in the surrounding quantum well area. The mechanism of trench formation and its implication for the control of the emission properties of light-emitting diodes is discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Atomic force microscopy (AFM) and scanning electron microscopy (SEM) with cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the morphology of an individual defect with its emission properties. The defects in question are observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having altered emission properties. Their sub-surface structure has previously been shown to consist of a basal plane stacking fault (BSF) in the plane of the QW stack, and a stacking mismatch boundary (SMB) which opens up into a trench at the sample surface. In CL, the material enclosed by the trench may emit more or less intensely than the surrounding material, but always exhibits a redshift relative to the surrounding material. A strong correlation exists between the width of the trench and both the redshift and the intensity ratio, with the widest trenches surrounding regions which exhibit the brightest and most redshifted emission. Based on studies of the evolution of the trench width with the number of QWs from four additional MQW samples, we conclude that in order for a trench defect to emit intense, strongly redshifted light, the BSF must be formed in the early stages of the growth of the QW stack. The data suggest that the SMB may act as a non-radiative recombination center. © 2013 American Institute of Physics.

Mechanical and hydraulic properties of Nankai accretionary prism sediments: Effect of stress path

We have conducted triaxial deformation experiments along different loading paths on prism sediments from the Nankai Trough. Different load paths of isotropic loading, uniaxial strain loading, triaxial compression (at constant confining pressure, Pc), undrained Pc reduction, drained Pc reduction, and triaxial unloading at constant Pc, were used to understand the evolution of mechanical and hydraulic properties under complicated stress states and loading histories in accretionary subduction zones. Five deformation experiments were conducted on three sediment core samples for the Nankai prism, specifically from older accreted sediments at the forearc basin, underthrust slope sediments beneath the megasplay fault, and overthrust Upper Shikoku Basin sediments along the frontal thrust. Yield envelopes for each sample were constructed based on the stress paths of Pc-reduction using the modified Cam-clay model, and in situ stress states of the prism were constrained using the results from the other load paths and accounting for horizontal stress. Results suggest that the sediments in the vicinity of the megasplay fault and frontal thrust are highly overconsolidated, and thus likely to deform brittle rather than ductile. The porosity of sediments decreases as the yield envelope expands, while the reduction in permeability mainly depends on the effective mean stress before yield, and the differential stress after yield. An improved understanding of sediment yield strength and hydromechanical properties along different load paths is necessary to treat accurately the coupling of deformation and fluid flow in accretionary subduction zones. © 2012 American Geophysical Union All Rights Reserved.

IGBT converters conducted EMI analysis by controlled multiple-slope switching waveform approximation

IGBTs realise high-performance power converters. Unfortunately, with fast switching of the IGBT-free wheel diode chopper cell, such circuits are intrinsic sources of high-level EMI. Therefore, costly EMI filters or shielding are normally needed on the load and supply side. In order to design these EMI suppression components, designers need to predict the EMI level with reasonable accuracy for a given structure and operating mode. Simplifying the transient IGBT switching current and voltage into a multiple slope switching waveform approximation offers a feasible way to estimate conducted EMI with some accuracy. This method is dependent on the availability of high-fidelity measurements. Also, that multiple slope approximation needs careful and time-costly IGBT parameters optimisation process to approach the real switching waveform. In this paper, Active Voltage Control Gate Drive(AVC GD) is employed to shape IGBT switching into several defined slopes. As a result, Conducted EMI prediction by multiple slope switching approximation could be more accurate, less costly but more friendly for implementation. © 2013 IEEE.

Extraordinarily thick-boned fish linked to the aridification of the Qaidam Basin (northern Tibetan Plateau)

Scattered with numerous salt lakes and approximate to 2,700-3,200 m above sea level, the giant Qaidam inland basin on the northern Tibetan Plateau has experienced continuing aridification since the beginning of the Late Cenozoic as a result of the India-Asia plate collision and associated uplift of the Tibetan Plateau. Previous evidence of aridification comes mainly from evaporite deposits and salinity-tolerant invertebrate fossils. Vertebrate fossils were rare until recent discoveries of abundant fish. Here, we report an unusual cyprinid fish, Hsianwenia wui, gen. et sp. nov., from Pliocene lake deposits of the Qaidam Basin, characterized by an extraordinarily thick skeleton that occupied almost the entire body. Such enormous skeletal thickening, apparently leaving little room for muscles, is unknown among extant fish. However, an almost identical condition occurs in the much smaller cyprinodontid Aphanius crassicaudus (Cyprinodonyiformes), collected from evaporites exposed along the northern margins of the Mediterranean Sea during the Messinian desiccation period. H. wui and A. crassicaudus both occur in similar deposits rich in carbonates (CaCO3) and sulfates (CaSO4), indicating that both were adapted to the extreme conditions resulting from the ariclification in the two areas. The overall skeletal thickening was most likely formed through deposition of the oversaturated calcium and was apparently a normal feature of the biology and growth of these fish.

The role of NH4+ toxicity in the decline of the submersed macrophyte Vallisneria natans in lakes of the Yangtze River basin, China

Experimental and field studies were conducted to evaluate the effects of NH4+ enrichment on growth and distribution of the submersed macrophyte, Vallisneria natans L, in lakes of the Yangtze River in China, based on the balance between free amino acids (FAA) and soluble carbohydrates (SC) in the plant tissue. Increase of NH4+ rather than NO3- concentrations in the water column caused FAA accumulation and SC depletion of the plant. The plant showed a unimodal pattern of biomass distribution along both FAA/SC ratios and external NH4+ concentrations, indicating that a moderate NH4-N concentration (< 0.3 mg L-1) benefited the plant, whereas the high NH4-N concentration (> 0.56 mg L-1) eliminated the plant completely. Therefore, 0.56 mg NH4-N mg L-1 in the water column was taken as the upper limit for V. natans in lakes of the Yangtze River basin. The mesocosm experiment showed that at a high external NH4-N (0.81 mg L-1), V. natans failed to propagate with a loss of half SC content (5 mg g(-1) DW) in the rhizomes, indicating that the consumption of carbohydrates for detoxification of excess NH4+ into non-toxic FAA significantly diminished carbohydrate supply to the rhizomes. This might consequently inhibit the vegetative reproduction of the plant, and also might be an important cause for the decline and disappearance of the plant with eutrophication. The present study for the first time reports substantial ecophysiological evidences for NH4+ stress to submersed macrophytes, and indicates that NH4+ toxicity arising from eutrophication probably plays a key role in the deterioration of submersed macrophytes like V. natans.

Garra rotundinasus, a new species of cyprinid fish (Pisces : Teleostei) from the upper Irrawaddy River basin, China

Garra rotundinasus, a new cyprinid species from the upper Irrawaddy River basin in Yunnan, China, is herein described. It shares with G. gravelyi the presence of a snout having a poorly developed proboscis represented by a truncate area in front of the nostrils, a character distinguishing both from all other Southeast Asian and Chinese congeners. The two species are distinct in coloration, morphometric and meristic characters. The sympatrically occurring G. tengchongensis is very similar to G. rotundinasus in possessing 36-37 perforated lateral line scales, 5 or 6 scales between the anus and anal-fin origin, and an anterior position of the anus (anus to anal distance 32.1-51.8% of pelvic to anal distance). Garra rotundinasus can be differentiated from G. tengehongensis in having a more slender caudal peduncle, a larger disc and no dark central band on the dorsal fin.

Fixation of the type species of the genus Sinilabeo and description of a new species from the upper Yangtze river basin, China (Pisces : Cyprinidae)

The type species of the cyprinid genus Sinilabeo was misidentified as Varicorhinus tungting, and the species under the generic name belong to Bangana and Linichthys. In order to make Sinilabeo available, its type species is fixed under Article 70.3.2 of the 1999 edition of the International Code of Zoological Nomenclature as S. hummeli, a new species herein described from the upper Yangtze River basin in Chongqing City and Sichuan Province, South China. A re-definition is provided for Sinilabeo. It resembles Qianlabeo in having an upper lip only present in the side of the upper jaw and uncovered by the rostral fold, but missing in the median part of the upper jaw that, instead, bears a thin, flexible, and cornified sheath, covered by the rostral fold, a character that can separate both from all other existing genera of Asian labeonins. However, Sinilabeo is distinguished from Qianlabeo in the presence of a rostral fold disconnected from the lower lip; a broadly interrupted postlabial groove only restricted to the side of the lower jaw; an upper lip, which is only present in the side of the upper separated from it by a groove; 9-10 branched dorsal-fin rays; two pairs of tiny maxillary barbels.