Photoluminescence of aggregated C-60 in nano-size at room temperature

When the aggregation of C-60 is arranged in mono-dispersed state on the ITO substrate, the photoluminescence (PL) spectra are observed clearly. These emission peaks are attributed to recombination of self - trapped excitons, the zero-phonon exciton (R-0) and its phonon replicas.

Study of energy transfer between rare earth ions in CaS host by photoluminescence spectra

When CaS:Sm3+, Eu2+ is excited at 476.5 nm (Ar+), the emission spectra taken at room temperature and at 77 K are different, indicating that there are two competitive energy transfer processes-Sm3+ --> Eu2+ and Eu2+ --> Sm3+ with phonon participation. So, the luminescence intensity of Sm3+ increases first, and then decreases as the concentration of Eu2+ is increasing. (C) 2001 Elsevier Science Ltd. All rights reserved.

The reduction of RE3+ in SrB6O10 prepared in air and the luminescence of SrB6O10 : RE2+ (RE=Eu, Sm, Tm)

The reduction of RE3+ to RE2+ (RE=Eu, Sm and Tm) in SrB6O10 prepared in air by high-temperature solid state reaction was observed. The luminescent properties of Eu2+ and Tm2+ show f-d transition and Sm2+ shows f-f transition at room temperature. Three crystallographic sites for Sm2+ in matrix are available. Vibronic transition of D-5(0)-F-7(0) of Sm2+ was studied. The coupled phonon energy about 108 cm(-1), was determined: from the vibronic transition. Due to the thermal population from D-5(0) level, (D1-FJ)-D-5-F-7 (J=0, 1, 2) transitions of Sm2+ were observed at room temperature. A charge compensation mechanism is proposed as a possible explanation.

Luminescence properties of Sm2+ in barium octaborates (BaB8O13 : Sm2+)

The luminescence of Sm2+ in BaB8O13 are studied as a function of temperature. At 10 K, several crystallographic sites for Sm2+ ions with inversion symmetry are possible and D-5(0) --> F-7(1) transition show predominant intensities, whereas above 50 K two crystallographic sites without inversion symmetry are clearly observed for Sm2+ in BaB8O13 and the D-5(0) --> F-7(0) transition show strongest intensity. The vibronic transitions and the non-radiative transitions of Sm2+ are studied and a coupled-phonon energy about 50 cm(-1) is obtained. The thermal effects on the line shift, emission intensities, half-width and lifetime of the D-5(0) --> F-7(0) transition are also studied. The decay curves at different temperatures are all in single exponential and are temperature-independent with lifetime around 3.5 ms. (C) 1999 Elsevier Science B.V. All rights reserved.

Vibrational spectrum and luminescence properties of CaAl2B2O7 : Eu3+

The vibrational spectrum of the CaAl2B2O7 was investigated. It was shown that the vibrations of the BO3 groups are present in the region of 1400 similar to 600 cm(-1), and the bands at 519 nm(-1) may originate from the AlO6 vibration. The luminescence properties of Eu3+ in CaAl2B2O7 were investigated. It was found that the Eu3+ ion in CaAl2B2O7 occupies two different sites. Investigation on the phonon sideband of Eu3+ indicates that BO3 groups are present in the:surroundings of Eu3+ ions.

The change of Eu3+-surroundings in the system Al2O3-B2O3 containing Eu3+ ions

The change of Eu3+-surroundings with the Al/B ratio varying from 4.5 to 2 and Eu/(Al + B) = 0.02, was investigated through X-ray diffraction, infrared spectra, excitation and emission spectra, and phonon sideband. The results show coexistence of the crystal phase Al18B4O33 and the amorphous phase and Eu3+ ions of the samples with the Al/B ratio from 3 to 2 are incorporated into the amorphous phase. It was also found that electron-phonon coupling strength decreases with the Al/B ratio from 3 to 2, non-radiative decay rate decreases, resulting in an increase of the Eu3+-emission intensity. (C) 1999 Elsevier Science Ltd. All rights reserved.

Luminescent properties of divalent samarium-doped strontium hexaborate

The valence change of samarium from trivalent to divalent in strontium hexaborate (SrB6O10) prepared in air is observed. The temperature dependence of the luminescence and vibronic transitions of Sm2+ are studied. The Sm2+ ions occupy three crystallographic sites. With increasing temperature, the D-5(0)-->F-7(0) transition line exhibits red shifts, and the half-width increases. At room temperature, due to the thermal population through the 4f(5)5d channel, the D-5(1)-->F-7(J) transitions are observed even though the vibrational energy is very close to the energy gap between the D-5(1) and D-5(0) levels in the host. A coupled phonon energy of about 108 cm(-1) is determined from the vibronic transitions of Sm2+ in the host.

Vibrational spectrum and luminescence properties of the system Al2O3-B2O3-Eu2O3

The system Al2O3-B2O3-Eu2O3, with Al/B ratio varying from 4.5 to 2 and Eu/(Al+B)=0.02, was synthesized by solid state reaction. The vibrational spectra of the system Al2O3-B2O3-Eu2O3 were investigated. It was found that no definite change in the regions of 1200 similar to 1000 cm(-1) due to the adsorption BO4 groups with decreasing Al/B ratio, indicating no Al3+ ion was substituted by Eu3+ ions and other changes revealed that there was an amorphous phase and Eu3+ ions may dope into the amorphous phase. The studies on the luminescent properties of the system Al2O3-B2O3 also show that Eu3+ ions dope into amorphous phase. The investigations on the phonon sideband of Eu3+ indicate that electron-phonon coupling strength decreases with Al/B ratio change from 3 to 2, leading to the non-radiative decay rate decreases and the Eu3+-emission intensity increase.

Identifying vibrations that destabilize crystals and characterize the glassy state

Greaves, George; Meneau, F.; Majerus, O.; Jones, D.G., (2005) 'Identifying vibrations that destabilize crystals and characterize the glassy state', Science 308(5726) pp.1299-1302 RAE2008

Quantum Monte Carlo in the Interaction Representation --- Application to a Spin-Peierls Model

A quantum Monte Carlo algorithm is constructed starting from the standard perturbation expansion in the interaction representation. The resulting configuration space is strongly related to that of the Stochastic Series Expansion (SSE) method, which is based on a direct power series expansion of exp(-beta*H). Sampling procedures previously developed for the SSE method can therefore be used also in the interaction representation formulation. The new method is first tested on the S=1/2 Heisenberg chain. Then, as an application to a model of great current interest, a Heisenberg chain including phonon degrees of freedom is studied. Einstein phonons are coupled to the spins via a linear modulation of the nearest-neighbor exchange. The simulation algorithm is implemented in the phonon occupation number basis, without Hilbert space truncations, and is exact. Results are presented for the magnetic properties of the system in a wide temperature regime, including the T-->0 limit where the chain undergoes a spin-Peierls transition. Some aspects of the phonon dynamics are also discussed. The results suggest that the effects of dynamic phonons in spin-Peierls compounds such as GeCuO3 and NaV2O5 must be included in order to obtain a correct quantitative description of their magnetic properties, both above and below the dimerization temperature.

Fabrication and characterization of doped and porous silicon nanowires as anodes for lithium ion batteries

By using Si(100) with different dopant type (n++-type (As) or p-type (B)), it is shown how metal-assisted chemically (MAC) etched silicon nanowires (Si NWs) can form with rough outer surfaces around a solid NW core for p-type NWs, and a unique, defined mesoporous structure for highly doped n-type NWs. High resolution electron microscopy techniques were used to define the characteristic roughening and mesoporous structure within the NWs and how such structures can form due to a judicious choice of carrier concentration and dopant type. Control of roughness and internal mesoporosity is demonstrated during the formation of Si NWs from highly doped n-type Si(100) during electroless etching through a systematic investigation of etching parameters (etching time, AgNO3 concentration, %HF and temperature). Raman scattering measurements of the transverse optical phonon confirm quantum size effects and phonon scattering in mesoporous wires associated with the etching condition, including quantum confinement effects for the nanocrystallites of Si comprising the internal structure of the mesoporous NWs. Laser power heating of NWs confirms phonon confinement and scattering from internal mesoporosity causing reduced thermal conductivity. The Li+ insertion and extraction characteristics at n-type and p-type Si(100) electrodes with different carrier density and doping type are investigated by cyclic voltammetry and constant current measurements. The insertion and extraction potentials are demonstrated to vary with cycling and the occurrence of an activation effect is shown in n-type electrodes where the charge capacity and voltammetric currents are found to be much higher than p-type electrodes. X-ray photo-electron spectroscopy (XPS) and Raman scattering demonstrate that highly doped n-type Si(100) retains Li as a silicide and converts to an amorphous phase as a two-step phase conversion process. The findings show the succinct dependence of Li insertion and extraction processes for uniformly doped Si(100) single crystals and how the doping type and its effect on the semiconductor-solution interface dominate Li insertion and extraction, composition, crystallinity changes and charge capacity. The effect of dopant, doping density and porosity of MAC etched Si NWs are investigated. The CV response is shown to change in area (current density) with increasing NW length and in profile shape with a changing porosity of the Si NWs. The CV response also changes with scan rate indicative of a transition from intercalation or alloying reactions, to pseudocapactive charge storage at higher scan rates and for p-type NWs. SEM and TEM show a change in structure of the NWs after Li insertion and extraction due to expansion and contraction of the Si NWs. Galvanostatic measurements show the cycling behavior and the Coulombic efficiency of the Si NWs in comparison to their bulk counterparts.

Modeling non-harmonic behavior of materials from experimental inelastic neutron scattering and thermal expansion measurements

Based on thermodynamic principles, we derive expressions quantifying the non-harmonic vibrational behavior of materials, which are rigorous yet easily evaluated from experimentally available data for the thermal expansion coefficient and the phonon density of states. These experimentally- derived quantities are valuable to benchmark first-principles theoretical predictions of harmonic and non-harmonic thermal behaviors using perturbation theory, ab initio molecular-dynamics, or Monte-Carlo simulations. We illustrate this analysis by computing the harmonic, dilational, and anharmonic contributions to the entropy, internal energy, and free energy of elemental aluminum and the ordered compound FeSi over a wide range of temperature. Results agree well with previous data in the literature and provide an efficient approach to estimate anharmonic effects in materials.

Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells

The semiconductor alloy indium gallium nitride (InxGa1-xN) offers substantial potential in the development of high-efficiency multi-junction photovoltaic devices due to its wide range of direct band gaps, strong absorption and other optoelectronic properties. This work uses a variety of characterization techniques to examine the properties of InxGa1-xN thin films deposited in a range of compositions by a novel plasma-enhanced evaporation deposition system. Due to the high vapour pressure and low dissociation temperature of indium, the indium incorporation and, ultimately, control of the InxGa1-xN composition was found to be influenced to a greater degree by deposition temperature than variations in the In:Ga source rates in the investigated region of deposition condition space. Under specific deposition conditions, crystalline films were grown in an advantageous nano-columnar microstructure with deposition temperature influencing column size and density. The InxGa1-xN films were determined to have very strong absorption coefficients with band gaps indirectly related to indium content. However, the films also suffer from compositional inhomogeneity and In-related defect complexes with strong phonon coupling that dominates the emission mechanism. This, in addition to the presence of metal impurities, harms the alloy’s electronic properties as no significant photoresponse was observed. This research has demonstrated the material properties that make the InxGa1-xN alloy attractive for multi-junction solar cells and the benefits/drawbacks of the plasma-enhanced evaporation deposition system. Future work is needed to overcome significant challenges relating to crystalline quality, compositional homogeneity and the optoelectronic properties of In-rich InxGa1-xN films in order to develop high-performance photovoltaic devices.

Measurement and interpretation of the mid-infrared properties of single crystal and polycrystalline gold

The contribution of electron-phonon scattering and grain boundary scattering to the mid-IR (lambda = 3.392 mum) properties of An has been assessed by examining both bulk, single crystal samples-Au(1 1 1) and Au(1 1 0)-and thin film, polycrystalline An samples at 300 K and 100 K by means of surface plasmon polariton excitation. The investigation constitutes a stringent test for the in-vacuo Otto-configuration prism coupler used to perform the measurements, illustrating its strengths and limitations. Analysis of the optical response is guided by a physically based interpretation of the Drude model. Relative to the reference case of single crystal Au at 100 K (epsilon = - 568 + i17.5), raising the temperature to 300 K causes increased electron-phonon scattering that accounts for a reduction of similar to40 nm in the electron mean free path. Comparison of a polycrystalline sample to the reference case determines a mean free path due to grain boundary scattering of similar to 17 nm, corresponding to about half the mean grain size as determined from atomic force microscopy and indicating a high reflectance coefficient for the An grain boundaries. An analysis combining consideration of grain boundary scattering and the inclusion of a small percentage of voids in the polycrystalline film by means of an effective medium model indicates a value for the grain boundary reflection coefficient in the range 0.55-0.71. (C) 2005 Elsevier B.V. All rights reserved.

Nonlinear transport and localization in single-walled carbon nanotubes

We have measured the electrical transport properties of mats of single-walled carbon nanotubes (SWNT) as a function of applied electric and magnetic fields. We find that at low temperatures the resistance as a function of temperature R(T) follows the Mott variable range hopping (VRH) formula for hopping in three dimensions. Measurement of the electric field dependence of the resistance R(E) allows for the determination of the Bohr radius of a localized state a = 700nm. The magnetoresistance (MR) of SWNT mat samples is large and negative at all temperatures and fields studied. The low field negative MR is proportional to H2, in agreement with variable range hopping in two or three dimensions. 3D VRH indicates good intertube contacts, implying that the localization is due to the disorder experienced by the individual tubes. The 3D localization radius gives a measure of the ID localization length on the individual tubes, which we estimate to be >700 nm. Implications for the electron-phonon mean free path are discussed.