Formation And Electrical Properties Of Polyacrylonitrile Thin Films Prepared By Plasma - Polymerisation

Due to the great versatility of the properties of polymer thin films, special interest has been taken in recent years on their preparation and electrical properties. The present thesis is entirely devoted to the study of the formation, structure and electrical properties of plasma» polymerised polyacrylonitrile (PAN) thin films. Eventhough the studies are confined to a single polymer film, the results in general are applicable to similar polar polymer films.

Studies on Catalysis by Nano Titania Modified with Metals and Nonmetals

Semiconductor photocatalysis has received much attention during last three decades as a promising solution for both energy generation and environmental problems. Heterogeneous photocatalytic oxidation allows the degradation of organic compounds into carbon dioxide and water in the presence of a semiconductor catalyst and UV light source. The •OH radicals formed during the photocatalytic processes are powerful oxidizing agents and can mineralise a number of organic contaminants. Titanium dioxide (TiO2), due to its chemical stability, non-toxicity and low cost represents one of the most efficient photocatalyst. However, only the ultraviolet fraction of the solar radiation is active in the photoexcitation processes using pure TiO2 and although, TiO2 can treat a wide range of organic pollutants the effectiveness of the process for pollution abatement is still low. A more effective and efficient catalyst therefore must be formulated. Doping of TiO2 was considered with the aim of improving photocatalytic properties. In this study TiO2 catalyst was prepared using the sol-gel method. Metal and nonmetal doped TiO2 catalysts were prepared. The photoactivity of the catalyst was evaluated by the photodegradation of different dyes and pesticides in aqueous solution. High photocatalytic degradation of all the pollutants was observed with doped TiO2. Structural and optical properties of the catalysts were characterized using XRD, BET surface area, UV-Vis. DRS, CHNS analysis, SEM, EDX, TEM, XPS, FTIR and TG. All the catalysts showed the anatase phase. The presence of dopants shifts the absorption of TiO2 into the visible region indicating the possibility of using visible light for photocatalytic processes.

Dayglow Emissions on Mars and Venus

An attempt has been made in this thesis to model some of the emissions observed by SPICAM and SPICAV on Mars and Venus, respectively, viz., CO Cameron band, CO+ 2 ultraviolet doublet, N2 triplet bands, atomic oxygen green (5577 A), red doublet (6300, 6364 A), and ultraviolet (2972 A) emissions. One of major sources of these emissions is photoelectron impact ionization/excitation. In this thesis, an electron degradation model based on Monte Carlo technique has been developed to calculate the production/excitation rates of above mentioned emissions due to electron impact. The limb brightness pro les of emissions are calculated and compared with the observations wherever available. The e ect of various model input parameters on dayglow emissions intensities is also evaluated

Studies On The Effect Of Laser Radiation And Other Mutagens On Plants

The effect of lasers of three wavelengths in the visible region - 476, 488 and 514 nm on mitotic and meiotic cell divisions, growth, yield and activity of specific enzymes were studied in two taxonomically diverse plant species — A/lium cepa L. and Vicia faba. The effect of laser exposures was compared with the effect of two physical mutagens (Gamma and Ultraviolet radiations) and two chemical mutagens (Ethyl Methane Sulphonate and Hydroxyl amine). The study indicated that lasers could be mutagenic causing aberration in the mitotic and meiotic cell divisions while also producing changes in the growth and yield of the plants. Lasers of higher wavelengths 488 and 514 nm caused aberrations in the early stages of mitotic cell division whereas lasers of lower wavelengths (476 nm) caused more aberrations in the later stages of mitotic cell division. Laser exposure of 488 nm wavelength at power density 400 mW induced higher mitotic and meiotic aberrations and also induced higher pollen sterility than lasers of 476 and 514 nm. The frequency of mitotic aberrations induced by lasers was lesser than that caused by y-irradiation but comparable to that induced by EMS and HA. Lasers cause mutations in higher frequencies than UV. Lasers had a stimulatory effect on growth and yield in both plant species. This stimulatory effect of lasers on germination could not however be correlated to the activity of amylase and protease, the key enzymes in seed gennination. Enzymes such as peroxidase and catalase, involved in scavenging of free oxygen radicals often produced by irradiation, did not show increased activity in laser irradiated samples. Further studies are required for elucidating the exact mechanisms by which lasers cause mutations

On structural, optical and dielectric properties of zinc aluminate nanoparticles

Zinc aluminate nanoparticles with average particle size of 40 nm were synthesized using a sol–gel combustion method. X-ray diffractometry result was analysed by Rietveld refinement method to establish the phase purity of the material. Different stages of phase formation of the material during the synthesis were investigated using differential scanning calorimetry and differential thermogravimetric analysis. Particle size was determined with transmission electron microscopy and the optical bandgap of the nanoparticles was determined by absorption spectroscopy in the ultraviolet-visible range. Dielectric permittivity and a.c. conductivity of the material were measured for frequencies from 100 kHz to 8 MHz in the temperature range of 30–120◦C. The presence of Maxwell– Wagner type interfacial polarization was found to exist in the material and hopping of electron by means of quantum mechanical tunneling is attributed as the reason for the observed a.c. conductivity

Organic field-effect transistors and phototransistors based on amorphous materials

A comparison between the charge transport properties in low molecular amorphous thin films of spiro-linked compound and their corresponding parent compound has been demonstrated. The field-effect transistor method is used for extracting physical parameters such as field-effect mobility of charge carriers, ON/OFF ratios, and stability. In addition, phototransistors have been fabricated and demonstrated for the first time by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. The active materials used in this study can be divided into three classes, namely Spiro-linked compounds (symmetrically spiro-linked compounds), the corresponding parent-compounds, and photosensitive spiro-linked compounds (asymmetrically spiro-linked com-pounds). Some of symmetrically spiro-linked compounds used in this study were 2,2',7,7'-Tetrakis-(di-phenylamino)-9,9'-spirobifluorene (Spiro-TAD),2,2',7,7'-Tetrakis-(N,N'-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), 2,2',7,7'-Tetra-(m-tolyl-phenylamino)-9,9'-spirobifluorene (Spiro-TPD), and 2,2Ž,7,7Ž-Tetra-(N-phenyl-1-naphtylamine)-9,9Ž-spirobifluorene (Spiro alpha-NPB). Related parent compounds of the symmetrically spiro-linked compound used in this study were N,N,N',N'-Tetraphenylbenzidine (TAD), N,N,N',N'-Tetrakis(4-methylphenyl)benzidine (TTB), N,N'-Bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), and N,N'-Diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPB). The photosensitive asymmetrically spiro-linked compounds used in this study were 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(biphenyl-4-yl)-9,9'-spirobifluorene (Spiro-DPSP), and 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(spirobifluorene-2-yl)-9,9'-spirobifluorene (Spiro-DPSP^2). It was found that the field-effect mobilities of charge carriers in thin films of symmetrically spiro-linked compounds and their corresponding parent compounds are in the same order of magnitude (~10^-5 cm^2/Vs). However, the thin films of the parent compounds were easily crystallized after the samples have been exposed in ambient atmosphere and at room temperature for three days. In contrast, the thin films and the transistor characteristics of symmetrically spiro-linked compound did not change significantly after the samples have been stored in ambient atmosphere and at room temperature for several months. Furthermore, temperature dependence of the mobility was analyzed in two models, namely the Arrhenius model and the Gaussian Disorder model. The Arrhenius model tends to give a high value of the prefactor mobility. However, it is difficult to distinguish whether the temperature behaviors of the material under consideration follows the Arrhenius model or the Gaussian Disorder model due to the narrow accessible range of the temperatures. For the first time, phototransistors have been fabricated and demonstrated by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. Intramolecular charge transfer between a bis(diphenylamino)biphenyl unit and a sexiphenyl unit leads to an increase in charge carrier density, providing the amplification effect. The operational responsivity of better than 1 A/W can be obtained for ultraviolet light at 370 nm, making the device interesting for sensor applications. This result offers a new potential application of organic thin film phototransistors as low-light level and low-cost visible blind ultraviolet photodetectors.

VUV-Laserablation von Spinnenseide

Spinnenseide gehört zu den stabilsten bekannten Polymerverbindungen. Spinnfäden können bis auf das Dreifache ihrer ursprünglichen Länge gedehnt werden, bevor sie reißen, und dabei mit rund 160 MJ/m³ mehr als dreimal soviel Energie absorbieren wie die stärkste synthetisch hergestellte Faser Kevlar (50 MJ/m³). Dabei weisen Spinnfäden mit 2 bis 5 Mikrometer nur ein Zehntel des Durchmessers eines menschlichen Haares auf. Das präzise, berührungslose Bearbeiten von Spinnenseide ist für verschiedene technische Anwendungen interessant, insbesondere wenn dabei ihre außergewöhnlichen Eigenschaften erhalten bleiben. Könnten die von Natur aus dünnen Seidenfäden gezielt in ihrem Durchmesser verringert werden, so wären sie unter anderem in der Mikroelektronik einzusetzen. Hier könnten sie als Trägermaterial für eine dünne, elektrisch leitfähige Schicht fungieren. Man erhielte Nanodrähte, die auch in mechanisch besonders belasteten Mikroelektronikbauteilen (MEMS) Verwendung finden könnten. In dieser Arbeit wird die Verwendung der laserinduzierten Ablation zur gezielten Bearbeitung von Haltefäden der Schwarzen Witwe (Latrodectus hesperus) beschrieben. Eingesetzt wurde ein VUV-Excimerlaser vom Typ LPF 205 (Lambda-Physik, Göttingen) mit einer Wellenlänge von 157 nm und einer Pulsdauer von 18 ns. Eine berührungslose Laserbearbeitung bei 157 nm erlaubt einen effizienten und präzisen Abtrag von Material durch Ablation aufgrund der geringen optischen Eindringtiefe von unter 100 nm oberhalb einer Schwellenfluenz (Energie/Fläche) von Φth=29 mJ/cm², ohne dabei das umgebende Material thermisch zu beeinträchtigen. Parallel zur Ablation setzt allerdings eine wellenförmige Oberflächenstrukturierung auf der Faseroberfläche ein, wodurch die mechanische Belastbarkeit der Faser entscheidend geschwächt wird. Die Ursache hierfür liegt im Abbau materialbedingter Spannungsfelder („stress release“) innerhalb einer durch das Laserlicht induzierten dünnen Schmelzschicht. Im Rahmen dieser Arbeit ist es nun gelungen, diese Strukturen durch einen anschließenden Glättungsprozeß zu entfernen. Dabei wird auf der bestrahlten Oberfläche mittels Laserlichts eine glatte Ablation erzielt. Mit feinerer Abstufung dieser Prozeßschritte konnte der Durchmesser des verwendeten Spinnenseidefadens zum Teil um 70 Prozent bis auf ca. 750 nm verringert werden. Durch Zugfestigkeitsexperimente wurde belegt, daß die mechanischen Eigenschaften der so bearbeiteten Spinnenseide weitgehend erhalten bleiben. Die im Rahmen dieser Arbeit angewandte Methode erlaubt somit eine präzise Laserablation von Spinnenseide und ähnlichen hochabsorbierenden Materialien, ohne deren Kernsubstanz in ihrer Beschaffenheit zu verändern.

Synthese und Charakterisierung von Spirocyclopentadithiophenen

Im Rahmen dieser Arbeit wurde eine Syntheseroute zu einem neuartigen heteroanalogen Spirobifluoren auf Basis von Thiophen entwickelt und optimiert. Der neue Spirokern konnte durch Anbringung von Elektronendonor- bzw. Elektronenakzeptorgruppen funktionalisiert werden. Die erhaltenen Funktionsmaterialien wurden spektroskopisch (Ultraviolet-Visible, Fluoreszenz), thermoanalytisch (Thermogravimetrische Analyse, Differential Thermo Analysis, Differential Scanning Calorimetry), elektrochemisch (Cyclovoltammetrie) sowie teilweise mittels Feldeffekttransistor charaktrisiert.Zur Totalsynthese des neuen auf Thiophen basierenden Spirokerns 4,4´-Spirobi[cyclopenta[2,1-b:3,4-b´]dithiophen] (SCPDT) wurde eine Syntheseroute entworfen, die ausgehend von Thiophen keine weiteren aufwändigen Precursormoleküle voraussetzt. Durch die Anbringung von stabilisierenden Endgruppen war es möglich neuartige Funktionsmaterialien mit niedrigem HOMO-LUMO-Gap herzustellen. Die phenyl- bzw. biphenylsubstituierten Spirocyclopentadithiophene 4P-SCPDT und 4BP-SCPDT sind im Vergleich zu den analogen, auf Spirobifluoren basierenden Verbindungen (Spiroquaterthiophen und Spirosexiphenyl) deutlich leichter oxidier- und reduzierbar. Das erniedrigte HOMO-LUMO-Gap ist auch im Absorptions- und Fluoreszenzspektrum durch die im Vergleich zu den spirobifluorenanalogen Molekülen bathochrome bzw. bathofluore Verschiebung deutlich erkennbar. Sehr gut sind die Ergebnisse der Feldeffekttransistor- und Phototransistor-Messungen an aufgedampfem 4P-SCPDT. So lässt sich eine Lochbeweglichkeit von 2*10^-4 cm2/Vs ermitteln. Dies ist die höchste Lochbeweglichkeit, die bei Spiromolekülen im amorphen Film mit einem bottom-contact FET gemessen wurde, wobei die Grenzfläche zwischen Elektrode und Halbleiter noch nicht optimiert wurde. Selbst nach zehnmonatiger Lagerung unter Atmosphärenbedingungen bei Raumtemperatur konnten nahezu die gleichen Werte gemessen werden. Dieses Ergebnis unterstreicht die morphologische Stabilität des amorphen Filmes. Unter Bestrahlung mit UV-Licht zeigt sich ein ausgeprägter photovoltaischer Effekt. Das überrascht, da 4P-SCPDT kein typisches Donor-Akzeptor-Molekül ist. Das gemessene Ansprechvermögen (Verhältnis des elektrischen Output zum optischen Input) ist höher als das von polykristallinem Kupfer-Phthalocyanin (CuPc), konjugierten Polymeren oder anderen Spiromolekülen. Um die Lochleitungs- bzw. Elektronenleitungseigenschaften zu optimieren wurden desweiteren noch Diphenylaminophenyl-, Diphenylaminothiophenyl-, Perfluorhexylthiophenyl und Tricyanovinyl-Endgruppen an den den SCPDT-Kern angebracht und die erhaltenen Funktionsmaterialien charakterisiert.

Development of hybrid UV VCSEL with organic active material and dielectric DBR mirrors for medical, sensoric and data storage applications

Lasers play an important role for medical, sensoric and data storage devices. This thesis is focused on design, technology development, fabrication and characterization of hybrid ultraviolet Vertical-Cavity Surface-Emitting Lasers (UV VCSEL) with organic laser-active material and inorganic distributed Bragg reflectors (DBR). Multilayer structures with different layer thicknesses, refractive indices and absorption coefficients of the inorganic materials were studied using theoretical model calculations. During the simulations the structure parameters such as materials and thicknesses have been varied. This procedure was repeated several times during the design optimization process including also the feedback from technology and characterization. Two types of VCSEL devices were investigated. The first is an index coupled structure consisting of bottom and top DBR dielectric mirrors. In the space in between them is the cavity, which includes active region and defines the spectral gain profile. In this configuration the maximum electrical field is concentrated in the cavity and can destroy the chemical structure of the active material. The second type of laser is a so called complex coupled VCSEL. In this structure the active material is placed not only in the cavity but also in parts of the DBR structure. The simulations show that such a distribution of the active material reduces the required pumping power for reaching lasing threshold. High efficiency is achieved by substituting the dielectric material with high refractive index for the periods closer to the cavity. The inorganic materials for the DBR mirrors have been deposited by Plasma- Enhanced Chemical Vapor Deposition (PECVD) and Dual Ion Beam Sputtering (DIBS) machines. Extended optimizations of the technological processes have been performed. All the processes are carried out in a clean room Class 1 and Class 10000. The optical properties and the thicknesses of the layers are measured in-situ by spectroscopic ellipsometry and spectroscopic reflectometry. The surface roughness is analyzed by atomic force microscopy (AFM) and images of the devices are taken with scanning electron microscope (SEM). The silicon dioxide (SiO2) and silicon nitride (Si3N4) layers deposited by the PECVD machine show defects of the material structure and have higher absorption in the ultra violet range compared to ion beam deposition (IBD). This results in low reflectivity of the DBR mirrors and also reduces the optical properties of the VCSEL devices. However PECVD has the advantage that the stress in the layers can be tuned and compensated, in contrast to IBD at the moment. A sputtering machine Ionsys 1000 produced by Roth&Rau company, is used for the deposition of silicon dioxide (SiO2), silicon nitride (Si3N4), aluminum oxide (Al2O3) and zirconium dioxide (ZrO2). The chamber is equipped with main (sputter) and assisted ion sources. The dielectric materials were optimized by introducing additional oxygen and nitrogen into the chamber. DBR mirrors with different material combinations were deposited. The measured optical properties of the fabricated multilayer structures show an excellent agreement with the results of theoretical model calculations. The layers deposited by puttering show high compressive stress. As an active region a novel organic material with spiro-linked molecules is used. Two different materials have been evaporated by utilizing a dye evaporation machine in the clean room of the department Makromolekulare Chemie und Molekulare Materialien (mmCmm). The Spiro-Octopus-1 organic material has a maximum emission at the wavelength λemission = 395 nm and the Spiro-Pphenal has a maximum emission at the wavelength λemission = 418 nm. Both of them have high refractive index and can be combined with low refractive index materials like silicon dioxide (SiO2). The sputtering method shows excellent optical quality of the deposited materials and high reflection of the multilayer structures. The bottom DBR mirrors for all VCSEL devices were deposited by the DIBS machine, whereas the top DBR mirror deposited either by PECVD or by combination of PECVD and DIBS. The fabricated VCSEL structures were optically pumped by nitrogen laser at wavelength λpumping = 337 nm. The emission was measured by spectrometer. A radiation of the VCSEL structure at wavelength 392 nm and 420 nm is observed.

Optical amplification and stability of spiroquaterphenyl compounds and blends

In this contribution, we present a systematic investigation on a series of spiroquaterphenyl compounds optimised for solid state lasing in the near ultraviolet (UV). Amplified spontaneous emission (ASE) thresholds in the order of 1 μJ/cm2 are obtained in neat (undiluted) films and blends, with emission peaks at 390 1 nm for unsubstituted and meta-substituted quaterphenyls and 400 4 nm for para-ether substituted quaterphenyls. Mixing with a transparent matrix retains a low threshold, shifts the emission to lower wavelengths and allows a better access to modes having their intensity maximum deeper in the film. Chemical design and blending allow an independent tuning of optical and processing properties such as the glass transition.

Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method

Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to 150°C, the morphology of the ZnO nanorods changed from sharp tip (needle shape) to flat tip (rod shape). These kinds of structure are useful in laser and field emission application.

Growth of ZnO Nanorods on GaN Using Aqueous Solution Method

Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to 150°C, the morphology of the ZnO nanorods changed from sharp tip with high aspect ratio to flat tip with smaller aspect ratio. These kinds of structure are useful in laser and field emission application.

High Indium Concentration InGaN/GaN Grown on Sapphire Substrate by MOCVD

The InGaN system provides the opportunity to fabricate light emitting devices over the whole visible and ultraviolet spectrum due to band-gap energies E[subscript g] varying between 3.42 eV for GaN and 1.89 eV for InN. However, high In content in InGaN layers will result in a significant degradation of the crystalline quality of the epitaxial layers. In addition, unlike other III-V compound semiconductors, the ratio of gallium to indium incorporated in InGaN is in general not a simple function of the metal atomic flux ratio, f[subscript Ga]/f[subscript In]. Instead, In incorporation is complicated by the tendency of gallium to incorporate preferentially and excess In to form metallic droplets on the growth surface. This phenomenon can definitely affect the In distribution in the InGaN system. Scanning electron microscopy, room temperature photoluminescence, and X-ray diffraction techniques have been used to characterize InGaN layer grown on InN and InGaN buffers. The growth was done on c-plane sapphire by MOCVD. Results showed that green emission was obtained which indicates a relatively high In incorporation.

High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching

Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM measurements revealed an average pore size of about 85-90 nm with a transverse dimension of 70-75 nm. As compared to the as-grown GaN film, the porous layer exhibits a substantial photoluminescence intensity enhancement with a partial relaxation of compressive stress. Such a stress relaxation is further confirmed by the red shifted E₂(TO) phonon peak in the Raman spectrum of porous GaN.

Micro-layered-photolithography for Micro-Fabrication and Micro-Molding

A novel process based on the principle of layered photolithography has been proposed and tested for making real three-dimensional micro-structures. An experimental setup was designed and built for doing experiments on this micro-fabrication process. An ultraviolet (UV) excimer laser at the wavelength of 248 nm was used as the light source and a single piece of photo-mask carrying a series of two dimensional (2D) patterns sliced from a three dimensional (3D) micro-part was employed for the photolithography process. The experiments were conducted on the solidification of liquid photopolymer from single layer to multiple layers. The single-layer photolithography experiments showed that certain photopolymers could be applied for the 3D micro-fabrication, and solid layers with sharp shapes could be formed from the liquid polymer identified. By using a unique alignment technique, multiple layers of photolithography was successfully realized for a micro-gear with features at 60 microns. Electroforming was also conducted for converting the photopolymer master to a metal cavity of the micro-gear, which proved that the process is feasible for micro-molding.