Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Muscarinic acetylcholine receptor expression in memory circuits: Implications for treatment of Alzheimer disease

Cholinergic transmission at muscarinic acetylcholine receptors (mAChR) has been implicated in higher brain functions such as learning and memory, and loss of synapses may contribute to the symptoms of Alzheimer disease. A heterogeneous family of five genetically distinct mAChR subtypes differentially modulate a variety of intracellular signaling systems as well as the processing of key molecules involved in the pathology of the disease. Although many muscarinic effects have been identified in memory circuits, including a diversity of pre- and post-synaptic actions in hippocampus, the identities of the molecular subtypes responsible for any given function remain elusive. All five mAChR genes are expressed in hippocampus, and subtype-specific antibodies have enabled identification, quantification, and localization of the encoded proteins. The m1, m2, and m4 mAChR proteins are most abundant in forebrain regions and they have distinct cellular and subcellular localizations suggestive of various pre- and postsynaptic functions in cholinergic circuits. The subtypes are also differentially altered in postmortem brain samples from Alzheimer disease cases. Further understanding of the molecular pharmacology of failing synapses in Alzheimer disease, together with the development of new subtype-selective drugs, may provide more specific and effective treatments for the disease.

Activation of memory circuits during cue-elicited cocaine craving.

Evidence accumulated over more than 45 years has indicated that environmental stimuli can induce craving for drugs of abuse in individuals who have addictive disorders. However, the brain mechanisms that subserve such craving have not been elucidated. Here a positron emission tomographic study shows increased glucose metabolism in cortical and limbic regions implicated in several forms of memory when human volunteers who abuse cocaine are exposed to drug-related stimuli. Correlations of metabolic increases in the dorsolateral prefrontal cortex, medial temporal lobe (amygdala), and cerebellum with self-reports of craving suggest that a distributed neural network, which integrates emotional and cognitive aspects of memory, links environmental cues with cocaine craving.

Molecular control of vertebrate iron metabolism: mRNA-based regulatory circuits operated by iron, nitric oxide, and oxidative stress.

As an essential nutrient and a potential toxin, iron poses an exquisite regulatory problem in biology and medicine. At the cellular level, the basic molecular framework for the regulation of iron uptake, storage, and utilization has been defined. Two cytoplasmic RNA-binding proteins, iron-regulatory protein-1 (IRP-1) and IRP-2, respond to changes in cellular iron availability and coordinate the expression of mRNAs that harbor IRP-binding sites, iron-responsive elements (IREs). Nitric oxide (NO) and oxidative stress in the form of H2O2 also signal to IRPs and thereby influence cellular iron metabolism. The recent discovery of two IRE-regulated mRNAs encoding enzymes of the mitochondrial citric acid cycle may represent the beginnings of elucidating regulatory coupling between iron and energy metabolism. In addition to providing insights into the regulation of iron metabolism and its connections with other cellular pathways, the IRE/IRP system has emerged as a prime example for the understanding of translational regulation and mRNA stability control. Finally, IRP-1 has highlighted an unexpected role for iron sulfur clusters as post-translational regulatory switches.

Estudo de transistores de tunelamento induzido por efeito de campo (TFET) construídos em nanofio.

Esse trabalho de mestrado teve como estudo o transistor Túnel-FET (TFET) fabricado em estrutura de nanofio de silício. Este estudo foi feito de forma teórica (simulação numérica) e experimental. Foram estudadas as principais características digitais e analógicas do dispositivo e seu potencial para uso em circuitos integrados avançados para a próxima década. A análise foi feita através da extração experimental e estudo dos principais parâmetros do dispositivo, tais como inclinação de sublimiar, transcondutância (gm), condutância de saída (gd), ganho intrínseco de tensão (AV) e eficiência do transistor. As medidas experimentais foram comparadas com os resultados obtidos pela simulação. Através do uso de diferentes parâmetros de ajuste e modelos de simulação, justificou-se o comportamento do dispositivo observado experimentalmente. Durante a execução deste trabalho estudou-se a influência da escolha do material de fonte no desempenho do dispositivo, bem como o impacto do diâmetro do nanofio nos principais parâmetros analógicos do transistor. Os dispositivos compostos por fonte de SiGe apresentaram valores maiores de gm e gd do que aqueles compostos por fonte de silício. A diferença percentual entre os valores de transcondutância para os diferentes materiais de fonte variou de 43% a 96%, sendo dependente do método utilizado para comparação, e a diferença percentual entre os valores de condutância de saída variou de 38% a 91%. Observou-se também uma degradação no valor de AV com a redução do diâmetro do nanofio. O ganho calculado a partir das medidas experimentais para o dispositivo com diâmetro de 50 nm é aproximadamente 45% menor do que o correspondente ao diâmetro de 110 nm. Adicionalmente estudou-se o impacto do diâmetro considerando diferentes polarizações de porta (VG) e concluiu-se que os TFETs apresentam melhor desempenho para baixos valores de VG (houve uma redução de aproximadamente 88% no valor de AV com o aumento da tensão de porta de 1,25 V para 1,9 V). A sobreposição entre porta e fonte e o perfil de dopantes na junção de tunelamento também foram analisados a fim de compreender qual combinação dessas características resultariam em um melhor desempenho do dispositivo. Observou-se que os melhores resultados estavam associados a um alinhamento entre o eletrodo de porta e a junção entre fonte e canal e a um perfil abrupto de dopantes na junção. Por fim comparou-se a tecnologia MOS com o TFET, obtendo-se como resultado um maior valor de AV (maior do que 40 dB) para o TFET.

Probing a single nuclear spin in a silicon single electron transistor

We study single electron transport across a single Bi dopant in a silicon nanotransistor to assess how the strong hyperfine coupling with the Bi nuclear spin I = 9/2 affects the transport characteristics of the device. In the sequential tunneling regime we find that at, temperatures in the range of 100 mK, dI/dV curves reflect the zero field hyperfine splitting as well as its evolution under an applied magnetic field. Our non-equilibrium quantum simulations show that nuclear spins can be partially polarized parallel or antiparallel to the electronic spin just tuning the applied bias.

Graphene single-electron transistor as a spin sensor for magnetic adsorbates

We study single-electron transport through a graphene quantum dot with magnetic adsorbates. We focus on the relation between the spin order of the adsorbates and the linear conductance of the device. The electronic structure of the graphene dot with magnetic adsorbates is modeled through numerical diagonalization of a tight-binding model with an exchange potential. We consider several mechanisms by which the adsorbate magnetic state can influence transport in a single-electron transistor: tuning the addition energy, changing the tunneling rate, and in the case of spin-polarized electrodes, through magnetoresistive effects. Whereas the first mechanism is always present, the others require that the electrode has to have either an energy- or spin-dependent density of states. We find that graphene dots are optimal systems to detect the spin state of a few magnetic centers.

A conceptual map about alternating current circuits

Teachers are deeply concerned on how to be more effective in our task of teaching. We must organize the contents of our specific area providing them with a logical configuration, for which we must know the mental structure of the students that we have in the classroom. We must shape this mental structure, in a progressive manner, so that they can assimilate the contents that we are trying to transfer, to make the learning as meaningful as possible. In the generative learning model, the links before the stimulus delivered by the teacher and the information stored in the mind of the learner requires an important effort by the student, who should build new conceptual meanings. That effort, which is extremely necessary for a good learning, sometimes is the missing ingredient so that the teaching-learning process can be properly assimilated. In electrical circuits, which we know are perfectly controlled and described by Ohm's law and Kirchhoff's two rules, there are two concepts that correspond to the following physical quantities: voltage and electrical resistance. These two concepts are integrated and linked when the concept of current is presented. This concept is not subordinated to the previous ones, it has the same degree of inclusiveness and gives rise to substantial relations between the three concepts, materializing it into a law: The Ohm, which allows us to relate and to calculate any of the three physical magnitudes, two of them known. The alternate current, in which both the voltage and the current are reversed dozens of times per second, plays an important role in many aspects of our modern life, because it is universally used. Its main feature is that its maximum voltage is easily modifiable through the use of transformers, which greatly facilitates its transfer with very few losses. In this paper, we present a conceptual map so that it is used as a new tool to analyze in a logical manner the underlying structure in the alternate current circuits, with the objective of providing the students from Sciences and Engineering majors with another option to try, amongst all, to achieve a significant learning of this important part of physics.

Electric time-switch for closing circuits at accurately regular intervals /

Includes bibliographical references.

Abridged notes of cases argued and determined in the several courts of law and equity in Ireland : with some decisions at Nisi Prius and on the circuits : a table of cases and index to the principal matters.

Edited by George Crawford and Edward Spenser Dix.

A theory of asynchronous circuits I /

"This work has been supported in part by the Office of Naval Research under Contract NR 044 001"