Thermodynamic damage mechanism of transparent films caused by a low-power laser

A new model for analyzing the laser-induced damage process is provided. In many damage pits, the melted residue can been found. This is evidence of the phase change of materials. Therefore the phase change of materials is incorporated into the mechanical damage mechanism of films. Three sequential stages are discussed: no phase change, liquid phase change, and gas phase change. To study the damage mechanism and process, two kinds of stress have been considered: thermal stress and deformation stress. The former is caused by the temperature gradient and the latter is caused by high-pressure drive deformation. The theory described can determine the size of the damage pit. (c) 2006 Optical Society of America.

Development in laser induced extrinsic absorption damage mechanism of dielectric films

Absorption of host and the temperature-dependence of absorption coefficient have been considered in evaluating temperatures distribution in films, when laser pulse irradiates on films. Absorption of dielectric materials experience three stages with the increase of temperature: multi-photon absorption; single photon absorption; metallic absorption. These different absorption mechanisms correspond to different band gap energies of materials, which will decrease when the temperature of materials increases. evaluating results indicate that absorption of host increases rapidly when the laser pulse will be over. If absorption of host and the temperature-dependence of absorption are considered, the material temperatures in films will be increased by a factor of four.

Mechanism initiated by nanoabsorber for UV nanosecond-pulse-driven damage of dielectric coatings

A model of plasma formation induced by UV nanosecond pulselaser interaction with SiO2 thin film based on nanoabsorber is proposed. The model considers the temperature dependence of band gap. The numerical results show that during the process of nanosecond pulsed-laser interaction with SiO2 thin film, foreign inclusion which absorbs a fraction of incident radiation heats the surrounding host material through heat conduction causing the decrease of the band gap and consequently, the transformation of the initial transparent matrix into an absorptive medium around the inclusion, thus facilitates optical damage. Qualitative comparison with experiments is also provided. (C) 2008 Optical Society of America.

Study on the activation mechanism of BCL-2 related ovarian killer (BOK)

BCL-2 family proteins are key regulators of the mitochondrial apoptotic machinery, controlling the mitochondrial outer membrane (MOM) permeabilization (MOMP). BCL-2 related Ovarian Killer (BOK) is a poorly understood pro-apoptotic member of this protein family. It has been reported that BOK localizes predominantly (although not exclusively) at membranes of the endoplasmic reticulum and of the Golgi apparatus. However, it is unclear whether BOK also operates at the MOM to promote apoptosis, as other pro-apoptotic BCL-2 family members do. Basing on the fact that the other two BAX-like pro-apoptotic members have been reported to oligomerize in order to induce MOMP, site-directed mutagenesis was used to generate two point mutations that predictably eliminated BOK’s oligomerization capacity. Then, the effect of such mutations on BOK’s membrane activity was examined using fluorescence spectroscopy.