Signatures of quantum phase transitions in parallel quantum dots: Crossover from local moment to underscreened spin-1 Kondo physics

We study a strongly interacting "quantum dot 1" and a weakly interacting "dot 2" connected in parallel to metallic leads. Gate voltages can drive the system between Kondo-quenched and non-Kondo free-moment phases separated by Kosterlitz-Thouless quantum phase transitions. Away from the immediate vicinity of the quantum phase transitions, the physical properties retain signatures of first-order transitions found previously to arise when dot 2 is strictly noninteracting. As interactions in dot 2 become stronger relative to the dot-lead coupling, the free moment in the non-Kondo phase evolves smoothly from an isolated spin-one-half in dot 1 to a many-body doublet arising from the incomplete Kondo compensation by the leads of a combined dot spin-one. These limits, which feature very different spin correlations between dot and lead electrons, can be distinguished by weak-bias conductance measurements performed at finite temperatures.

Studio della struttura locale di droganti in quantum dots mediante spettroscopia di assorbimento di raggi X

La capacità della spettroscopia di assorbimento di riuscire a determinare la struttura locale di campioni di ogni tipo e concentrazione, dagli elementi puri ai più moderni materiali nanostrutturati, rende lo studio dei meccanismi di incorporazione di droganti in matrici di semiconduttori il campo che meglio ne esprime tutto il potenziale. Inoltre la possibilità di ottenere informazioni sulla struttura locale di un particolare elemento in traccia posto in sistemi senza ordine a lungo raggio risulta, ovviamente, nello studio dei semiconduttori di grandissimo interesse. Tuttavia, la complessità di determinate strutture, generate dalla incorporazione di elementi eterovalenti che ne modificano la simmetria, può far si che all’analisi sperimentale si debbano affiancare dei metodi avanzati ab-initio. Questi approcci garantiscono, attraverso la simulazione o di strutture atomiche o dello stesso spettro XAS, di ottenere una più completa e precisa interpretazione dei dati sperimentali. Nella fase preliminare di questo elaborato si illustrerà la fenomenologia della spettroscopia di assorbimento e i fondamenti teorici che stanno alla base dell’analisi della struttura fine di soglia. Si introdurranno contemporaneamente le tecniche sperimentali con cui si realizzano le misure di spettri di assorbimento su una beamline che sfrutta sorgente di radiazione di sincrotrone facendo riferimento agli strumenti montati sulla linea LISA (o BM08) presso l’European Synchrotron Radiation Facility di Grenoble su cui si sono realizzati gli esperimenti di questo lavoro. Successivamente si realizzerà una rassegna di alcuni esperimenti simbolo della analisi della struttura locale di droganti in semiconduttori mediante XAFS, andando ad approfondire i metodi sperimentali associati. Nella parte principale della tesi verranno descritti alcuni tipi di analisi avanzate effettuate su Colloidal Quantum Dots a base di solfuro di piombo drogati con antimonio. Tali sistemi, particolarmente interessanti per potenziali applicazioni in campo optoelettrico, sono stati analizzati mediante misure di fluorescenza ottenute sulla beamline LISA. La fase di analisi ha visto la progettazione di una suite di programmi in C++ per realizzare simulazioni di uno spettro XAS teorico completo basato su strutture ottenute (anche esse) da metodi ab-initio.

Room temperature photoluminescence of InGaAs Surface Quantum Dots

Self-assembled InGaAs quantum dots show unique physical properties such as three dimensional confinement, high size homogeneity, high density and low number of dislocations. They have been extensively used in the active regions of laser devices for optical communications applications [1]. Therefore, buried quantum dots (BQDs) embedded in wider band gap materials have been normally studied. The wave confinement in all directions and the stress field around the dot affect both optical and electrical properties [2, 3]. However, surface quantum dots (SQDs) are less affected by stress, although their optical and electrical characteristics have a strong dependence on surface fluctuation. Thus, they can play an important role in sensor applications

Mid-infrared photodetectors based on GaAsSb-capped InAs quantum dots

Quantum dot infrared photodetectors (QDIPs) are very attractive for many applications such as infrared imaging, remote sensing and gas sensing, thanks to its promising features such as high temperature operation, normal incidence response and low dark current [1]. However, the key issue is to obtain a high-quality active region which requires an optimization of the nanostructure. By using GaAsSb capping layer, InAs QDs have improved their optical emission in the range between 1.15 and 1.3 m (at Sb composition of 14 %), due to a reduction of a compressive strain in QD and an increment of a QD height [2]. In this work, we have demonstrated strong and narrow intraband photoresponses at ~ 5 m from GaAsSb-capped InAs/GaAs QDIPs under normal light-incidence.

Self-organized colloidal quantum dots and metal nanoparticles for plasmon-enhanced intermediate-band solar cells

A colloidal deposition technique is presented to construct long-range ordered hybrid arrays of self-assembled quantum dots and metal nanoparticles. Quantum dots are promising for novel opto-electronic devices but, in most cases, their optical transitions of interest lack sufficient light absorption to provide a significant impact in their implementation. A potential solution is to couple the dots with localized plasmons in metal nanoparticles. The extreme confinement of light in the near-field produced by the nanoparticles can potentially boost the absorption in the quantum dots by up to two orders of magnitude. In this work, light extinction measurements are employed to probe the plasmon resonance of spherical gold nanoparticles in lead sulfide colloidal quantum dots and amorphous silicon thin-films. Mie theory computations are used to analyze the experimental results and determine the absorption enhancement that can be generated by the highly intense near-field produced in the vicinity of the gold nanoparticles at their surface plasmon resonance. The results presented here are of interest for the development of plasmon-enhanced colloidal nanostructured photovoltaic materials, such as colloidal quantum dot intermediate-band solar cells.

Effect of field damping layer on two step absorption of quantum dots solar cells

Multi-stacked InAs/AlGaAs quantum dot solar cells (QDSCs) introduced with field damping layers (FDL) which sustain the junction built-in potential have been studied. Without an external bias condition, the external quantum efficiency (EQE) of QD layers are reduced by introducing the thick FDL, because the carrier escape due to built-in electric field was suppressed. On the other hand, the photocurrent production due to two-step absorption is increased by the formation of flat-band QD structure for QDSC with thick FDL.

Fano-Rashba effect in quantum dots

We consider the electronic transport through a Rashba quantum dot coupled to ferromagnetic leads. We show that the interference of localized electron states with resonant electron states leads to the appearance of the Fano-Rashba effect. This effect occurs due to the interference of bound levels of spin-polarized electrons with the continuum of electronic states with an opposite spin polarization. We investigate this Fano-Rashba effect as a function of the applied magnetic field and Rashba spin-orbit coupling.

Single-exciton spectroscopy of single Mn doped InAs quantum dots

The optical spectroscopy of a single InAs quantum dot doped with a single Mn atom is studied using a model Hamiltonian that includes the exchange interactions between the spins of the quantum dot electron-hole pair, the Mn atom, and the acceptor hole. Our model permits linking the photoluminescence spectra to the Mn spin states after photon emission. We focus on the relation between the charge state of the Mn, A0 or A−, and the different spectra which result through either band-to-band or band-to-acceptor transitions. We consider both neutral and negatively charged dots. Our model is able to account for recent experimental results on single Mn doped InAs photoluminescence spectra and can be used to account for future experiments in GaAs quantum dots. Similarities and differences with the case of single Mn doped CdTe quantum dots are discussed.

Mn-doped II-VI quantum dots: artificial molecular magnets

The notion of artificial atom relies on the capability to change the number of carriers one by one in semiconductor quantum dots, and the resulting changes in their electronic structure. Organic molecules with transition metal atoms that have a net magnetic moment and display hysteretic behaviour are known as single molecule magnets (SMM). The fabrication of CdTe quantum dots chemically doped with a controlled number of Mn atoms and with a number of carriers controlled either electrically or optically paves the way towards a new concept in nanomagnetism: the artificial single molecule magnet. Here we study the magnetic properties of a Mn-doped CdTe quantum dot for different charge states and show to what extent they behave like a single molecule magnet.

Transport across two interacting quantum dots: Bulk Kondo, Kondo box, and molecular regimes

We analyze the transport properties of a double quantum dot device with both dots coupled to perfect conducting leads and to a finite chain of N noninteracting sites connecting both of them. The interdot chain strongly influences the transport across the system and the local density of states of the dots. We study the case of a small number of sites, so that Kondo box effects are present, varying the coupling between the dots and the chain. For odd N and small coupling between the interdot chain and the dots, a state with two coexisting Kondo regimes develops: the bulk Kondo due to the quantum dots connected to leads and the one produced by the screening of the quantum dot spins by the spin in the finite chain at the Fermi level. As the coupling to the interdot chain increases, there is a crossover to a molecular Kondo effect, due to the screening of the molecule (formed by the finite chain and the quantum dots) spin by the leads. For even N the two Kondo temperatures regime does not develop and the physics is dominated by the usual competition between Kondo and antiferromagnetism between the quantum dots. We finally study how the transport properties are affected as N is increased. For the study we used exact multiconfigurational Lanczos calculations and finite-U slave-boson mean-field theory at T=0. The results obtained with both methods describe qualitatively and also quantitatively the same physics.

Non-ideal monitoring of a qubit state using a quantum tunnelling device

We propose a model for non-ideal monitoring of the state of a coupled quantum dot qubit by a quantum tunnelling device. The non-ideality is modelled using an equivalent measurement circuit. This allows realistically available measurement results to be related to the state of the quantum system (qubit). We present a quantum trajectory that describes the stochastic evolution of the qubit state conditioned by tunnelling events (i.e. current) through the device. We calculate and compare the noise power spectra of the current in an ideal and a non-ideal measurement. The results show that when the two qubit dots are strongly coupled the non-ideal measurement cannot detect the qubit state precisely. The limitation of the ideal model for describing a realistic system maybe estimated from the noise spectra.

Charge transport in a quantum electromechanical system

We describe a quantum electromechanical system comprising a single quantum dot harmonically bound between two electrodes and facilitating a tunneling current between them. An example of such a system is a fullerene molecule between two metal electrodes [Park et al., Nature 407, 57 (2000)]. The description is based on a quantum master equation for the density operator of the electronic and vibrational degrees of freedom and thus incorporates the dynamics of both diagonal (population) and off diagonal (coherence) terms. We derive coupled equations of motion for the electron occupation number of the dot and the vibrational degrees of freedom, including damping of the vibration and thermo-mechanical noise. This dynamical description is related to observable features of the system including the stationary current as a function of bias voltage

Quantum trajectories for the realistic measurement of a solid-state charge qubit

We present a new model for the continuous measurement of a coupled quantum dot charge qubit. We model the effects of a realistic measurement, namely adding noise to, and filtering, the current through the detector. This is achieved by embedding the detector in an equivalent circuit for measurement. Our aim is to describe the evolution of the qubit state conditioned on the macroscopic output of the external circuit. We achieve this by generalizing a recently developed quantum trajectory theory for realistic photodetectors [P. Warszawski, H. M. Wiseman, and H. Mabuchi, Phys. Rev. A 65, 023802 (2002)] to treat solid-state detectors. This yields stochastic equations whose (numerical) solutions are the realistic quantum trajectories of the conditioned qubit state. We derive our general theory in the context of a low transparency quantum point contact. Areas of application for our theory and its relation to previous work are discussed.

Quantum gate based on Stark tunable nanocrystal interactions with ultrahigh-Q/V field modes in fused silica microcavities

We investigate the use of nanocrystal quantum dots as a quantum bus element for preparing various quantum resources for use in photonic quantum technologies. Using the Stark-tuning property of nanocrystal quantum dots as well as the biexciton transition, we demonstrate a photonic controlled-NOT (CNOT) interaction between two logical photonic qubits comprising two cavity field modes each. We find the CNOT interaction to be a robust generator of photonic Bell states, even with relatively large biexciton losses. These results are discussed in light of the current state of the art of both microcavity fabrication and recent advances in nanocrystal quantum dot technology. Overall, we find that such a scheme should be feasible in the near future with appropriate refinements to both nanocrystal fabrication technology and microcavity design. Such a gate could serve as an active element in photonic-based quantum technologies.

Droplet etching of deep nanoholes for filling with self-aligned complex quantum structures

Strain-free epitaxial quantum dots (QDs) are fabricated by a combination of Al local droplet etching (LDE) of nanoholes in AlGaAs surfaces and subsequent hole filling with GaAs. The whole process is performed in a conventional molecular beam epitaxy (MBE) chamber. Autocorrelation measurements establish single-photon emission from LDE QDs with a very small correlation function g (2)(0)≃ 0.01 of the exciton emission. Here, we focus on the influence of the initial hole depth on the QD optical properties with the goal to create deep holes suited for filling with more complex nanostructures like quantum dot molecules (QDM). The depth of droplet etched nanoholes is controlled by the droplet material coverage and the process temperature, where a higher coverage or temperature yields deeper holes. The requirements of high quantum dot uniformity and narrow luminescence linewidth, which are often found in applications, set limits to the process temperature. At high temperatures, the hole depths become inhomogeneous and the linewidth rapidly increases beyond 640 °C. With the present process technique, we identify an upper limit of 40-nm hole depth if the linewidth has to remain below 100 μeV. Furthermore, we study the exciton fine-structure splitting which is increased from 4.6 μeV in 15-nm-deep to 7.9 μeV in 35-nm-deep holes. As an example for the functionalization of deep nanoholes, self-aligned vertically stacked GaAs QD pairs are fabricated by filling of holes with 35 nm depth. Exciton peaks from stacked dots show linewidths below 100 μeV which is close to that from single QDs.