云南矮马资源及种质研究总结

矮马在国内重新发现后，我们对云南矮马历经７年的调查研究，取得如下主要结果：（１）据史料记述，考古物证，血液蛋白多态测定，云南极可能是矮马渊源地；（２）对全省１２个地（州）实地调查及５个地（州）的了解，证明云南全省均有矮马，其数量占全国矮马总数的８５％～９０％，表明云南为矮马的中心产区。矮马的分布密度与生态环境、社会经济、文化、交通状况密切相关，与海拔、气温关系不大；（３）对正常的成年矮马和普通马，屠测６９项指标，其差异达显著和极显著水平的占５２．２７％；（４）对头骨形态和１０５项尺度观测，两种马间差异达显著和极显著水准的占７２．３８％，表明二者为独立的品种。通过臼齿大小及齿面雏褶形态鉴别，两者间存在明显差异，并确认两种马均为古老品种；（５）测定矮马、普通马的血液生理生化指标２８项４６个指标，有７个指标存在显著和极显著差异。（６）两种马的染色体数均为２ｎ＝６４，Ｃ带结构异染色质存在明显差异，反映出两种马间遗传进化上的差异；（７）对矮马、普通马的６种血液蛋白和同功酶测定，测到９个多态位点，结果在ＴＦ上两者有明显差异。对矮马、普通马样本，测定４４个遗传座位，１０个多态遗传座位中ＰＧＭ及ＴＦ在两品种间差异显著.

Polyculture of carps using over-wintered fingerlings under different stocking densities

An on-farm trial was undertaken in twelve earthen ponds (1200-1600 m') to evaluate the growth and production of over-wintered fingerlings of rohu (Labeo rohita), catla (Carla catla) and mrigal (Cirrhinus rnrigala) in polyculture at three stocking densities. The stocking densities were 2,250; 3,250 and 4,250 fish/ha in treatment-1, treatment-2 and treatment-3, respectively. Fish in all ponds were fed with rice bran and mustard oil cake at the ratio of 3:1. Fish production obtained in three treatments were 2325±74.75, 2620±49.66 and 2982±171.52 kg/ha. The results demonstrated higher mean growth in T-1 than in T-2 and T-3. However, the highest production as well as net benefit was obtained in treatment-3.

Beyond theory: An examination of lean new product introduction practices in the UK

Interest is growing around the application of lean techniques to new product introduction (NPI). Although a relatively emergent topic compared with the application of 'lean' within the factory, since 2000 there has been an exponential rise in the literature on this subject. However, much of this work focuses on describing and extolling the virtues of the 'Toyota approach' to design. Therefore, by way of a stock take for the UK, the present authors' research has set out to understand how well lean product design practices have been adopted by leading manufacturers. This has been achieved by carrying out in-depth case studies with three carefully selected manufacturers of complex engineered products. This paper describes these studies, the detailed results and subsequent findings, and concludes that both the awareness and adoption of practices is generally embryonic and far removed from the theory advocated in the literature. © IMechE 2007.

金环蛇蛇毒对S180, EAC 腹水癌细胞的细胞毒性作用

　目的　探讨金环蛇毒对S180, EAC 腹水癌细胞的细胞毒性作用。　方法　采用小白鼠腹腔和皮下 接种S180, EAC 腹水癌细胞造成小白鼠腹水模型后腹腔注射金环蛇毒。　结果　腹腔注射金环蛇毒, 能 抑制肿瘤细胞的生长, 降低接种率。但不能完全控制腹水和癌细胞的生长。体外试验表明有明显的细胞毒 作用。台酚蓝染色镜检可见死细胞显著增加, 腹水图片检查给药后细胞膜破裂, 纤维化坏死明显。　结论 　能延长小白鼠存活时间。

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

洞庭湖浮游生物群落DNA指纹与理化因子的关系

对东洞庭湖7个采样站点的浮游生物群落DNA多态性进行了RAPD指纹分析,并探讨了其DNA指纹与理化因子的关系。结果如下:(1)从80条随机引物中筛选出的11条引物共获得148条谱带,多态率为98.6%;所用引物在各站点可获得45—70条扩增谱带,平均为57.6条,其中Ⅳ站最少;(2)Ⅳ站的泥沙含量最高(75.5mg/L),其他各站在1.2—40.3mg/L;各站点间的pH值比较接近,都呈弱碱性;Ⅰ站的TN、TDN及TP含量最高,Ⅲ站的TDP最高,但各站点相差不大。相似性聚类分析表明,浮游生物群落DNA指纹

白鳍豚栖息活动区及其群体活动的初步研究

<正> 我国特有的稀珍豚类白鱀豚正处于频危状况,它们呈点块状分布在长江中、下游1600多公里的干流中,现存活头数不足200头,目前我国政府已将白鳍豚的资源保护工作,提高到了抢救的高度。为了切实保护白鳍豚,不仅要了解它的分布、数量、资源下降的原因,还要摸清它的栖息活动区以及它的群体活动规律。陈佩薰等(1980)、周开亚等(1980),对白鳍豚的生境作过一般性叙述,截至

鲤科的科下类群及其宗系发生关系

<正> 鲤科为鲤形目中最大的科,拥有275属1600种(Pattern 1975)。早在100多年前Bleeker(1863)已对该科进行了较细的类群划分,嗣后,其他作者也先后做过这方面的工作。Regan(1911)发现某些骨骼性状在宗系发生(phylogeny)上具有一定的重要性,而另一些性状则对划分类群没有意义。Berg(1912,1940)依据较特别的外部形态来规定

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Direct observation of coherent spin transfer processes in an InGaAs/GaAs quantum well via two-color time-resolved Kerr rotation measurements

A two-color time-resolved Kerr rotation spectroscopy system was built, with a femtosecond Ti:sapphire laser and a photonic crystal fiber, to study coherent spin transfer processes in an InGaAs/GaAs quantum well sample. The femtosecond Ti:sapphire laser plays two roles: besides providing a pump beam with a tunable wavelength, it also excites the photonic crystal fiber to generate supercontinuum light ranging from 500 nm to 1600 nm, from which a probe beam with a desirable wavelength is selected with a suitable interference filter. With such a system, we studied spin transfer processes between two semiconductors of different gaps in an InGaAs/GaAs quantum well sample. We found that electron spins generated in the GaAs barrier were transferred coherently into the InGaAs quantum well. A model based on rate equations and Bloch-Torrey equations is used to describe the coherent spin transfer processes quantitatively. With this model, we obtain an effective electron spin accumulation time of 21 ps in the InGaAs quantum well.

Fabrication and Infrared Optical Properties of Nano Vanadium Dioxide Thin Films

Vanadium dioxide thin films were fabricated by ion beam sputtering on Si3N4/SiO2/Si after a post reductive annealing process in a nitrogen atmosphere. X-ray Diffraction (XRD), scanning electron microscope (SEM), and X-ray photoelectron spectroscopy (XPS) were employed to analyze the effects of post annealing temperature on crystallinity, morphology, and composition of the vanadium oxide thin films. Transmission properties of vanadium dioxide thin films were measured by Fourier transform-infrared (FT-IR) spectroscopy. The results showed that the as-deposited vanadium oxide thin films were composed of non-crystalline V2O5 and a tetragonal rutile VO2. After annealing at 400 degrees C for 2 h, the mixed phase vanadium oxide (VOx) thin film changed its composition and structure to VO2 and had a (011) oriented monoclinic rutile structure. When increasing the temperature to 450 degrees C, nano VO2 thin films with smaller grains were obtained. FT-IR results showed that the transmission contrast factor of the nano VO2 thin film was more than 0.99 and the transmission of smaller grain nano VO2 thin film was near zero at its switched state. Nano VO2 thin film with smaller grains is an ideal material for application in optical switching devices.

Mode Analysis for Equilateral-Triangle-Resonator Microlasers with Metal Confinement Layers

Mode characteristics are analyzed for electrically injected equilateral-triangle-resonator (ETR) semiconductor microlasers, which are laterally confined by insulating barrier SiO2 and electrode metals Ti-Au. For the ETR without metal layers, the totally confined mode field patterns are derived based on the reflection phase shifts, and the Q-factors are calculated from the far-field emission of the analytical near field distribution, which are agreement very well with the numerical results of the finite-difference time-domain (FDTD) simulation. The polarization dependence reflections for light rays incident on semiconductor-SiO2 -Ti-Au multi-layer structures are accounted in considering the confinement of TE and TM modes in the ETR with the metal layers. The reflectivity will greatly reduce with a Ti layer between SiO2 and Au for light rays with incident angle less than 30 especially for the TE mode, even the thickness of the Ti layer is only 10 nm. If the ETR is laterally confined by SiO2-Au layers without the Ti layer, the Fabry-Perot type modes with an incident angle of zero on one side of the ETR can also have high Q-factor. The FDTD simulation for the ETR confined by metal layers verifies the above analysis based on multi-layer reflections. The output spectra with mode intervals of whispering-gallery modes and Fabry-Perot type modes are observed from different ETR lasers with side length of 10 m, respectively.

Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.