997 resultados para III-Nitride
Resumo:
Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N 2/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N 2/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N 2/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm. © 2012 Elsevier B.V. All rights reserved.
Resumo:
This work examines the basic feasibility of the net-zero-balance TRU multi-recycling concept in which trivalent lanthanide fission products (Ln(III) ) are not separated from trivalent actinides (An(III)). The TRU together with Eu and Gd isotopes are recycled in a standard PWR using Combined Non-Fertile and UO2 (CONFU) assembly design. The assembly assumes a heterogeneous structure where about 20% of U02 fuel pins on the assembly periphery are replaced with Inert Matrix Fuel (IMF) pins hosting TRU, Gd, and Eu generated in the previous cycles. The 2-D neutronic analysis show potential feasibility of Ln / An recycling in PWR using CONFU assembly. Recycling of Ln reduces the fuel cycle length by about 30 effective full power days (EFPD) and TRU destruction efficiency by about 5%. Power peaking factors and reactivity feedback coefficients are close to those of CONFU assembly without Ln recycling.