Delay optimized zero-forcing channel shortening algorithm for wireless communication

In Orthogonal Frequency Division Multiplexing and Discrete Multitone transceivers, a guard interval called Cyclic Prefix (CP) is inserted to avoid inter-symbol interference. The length of the CP is usually greater than the impulse response of the channel resulting in a loss of useful data carriers. In order to avoid long CP, a time domain equalizer is used to shorten the channel. In this paper, we propose a method to include a delay in the zero-forcing equalizer and obtain an optimal value of the delay, based on the location of zeros of the channel. The performance of the algorithms is studied using numerical simulations.

On interference alignment for symmetrically connected interference networks with line of sight channels at finite powers

In this work, interference alignment for a class of Gaussian interference networks with general message demands, having line of sight (LOS) channels, at finite powers is considered. We assume that each transmitter has one independent message to be transmitted and the propagation delays are uniformly distributed between 0 and (L - 1) (L >; 0). If receiver-j, j ∈{1,2,..., J}, requires the message of transmitter-i, i ∈ {1, 2, ..., K}, we say (i, j) belongs to a connection. A class of interference networks called the symmetrically connected interference network is defined as a network where, the number of connections required at each transmitter-i is equal to ct for all i and the number of connections required at each receiver-j is equal to cr for all j, for some fixed positive integers ct and cr. For such networks with a LOS channel between every transmitter and every receiver, we show that an expected sum-spectral efficiency (in bits/sec/Hz) of at least K/(e+c1-1)(ct+1) (ct/ct+1)ct log2 (1+min(i, j)∈c|hi, j|2 P/WN0) can be achieved as the number of transmitters and receivers tend to infinity, i.e., K, J →∞ where, C denotes the set of all connections, hij is the channel gain between transmitter-i and receiver-j, P is the average power constraint at each transmitter, W is the bandwidth and N0 W is the variance of Gaussian noise at each receiver. This means that, for an LOS symmetrically connected interference network, at any finite power, the total spectral efficiency can grow linearly with K as K, J →∞. This is achieved by extending the time domain interference alignment scheme proposed by Grokop et al. for the k-user Gaussian interference channel to interference networks.

Optimal capacity relay node placement in a multi-hop network on a line

We use information theoretic achievable rate formulas for the multi-relay channel to study the problem of optimal placement of relay nodes along the straight line joining a source node and a destination node. The achievable rate formulas that we utilize are for full-duplex radios at the relays and decode-and-forward relaying. For the single relay case, and individual power constraints at the source node and the relay node, we provide explicit formulas for the optimal relay location and the optimal power allocation to the source-relay channel, for the exponential and the power-law path-loss channel models. For the multiple relay case, we consider exponential path-loss and a total power constraint over the source and the relays, and derive an optimization problem, the solution of which provides the optimal relay locations. Numerical results suggest that at low attenuation the relays are mostly clustered close to the source in order to be able to cooperate among themselves, whereas at high attenuation they are uniformly placed and work as repeaters. We also prove that a constant rate independent of the attenuation in the network can be achieved by placing a large enough number of relay nodes uniformly between the source and the destination, under the exponential path-loss model with total power constraint.

Analysis of modified microstrip line and its application

Analysis of a microstrip line with a symmetrically located aperture in its ground plane is reported in this paper. The solution is based on conformal mapping technique. Conformal mapping has been used to determine the characteristic impedance and effective permittivity of the line. The accuracy of results is within 5% error. An low pass filter has been designed based on the electrical parameters obtained using the proposed method.

Zero-sum risk-sensitive stochastic games on a countable state space

Infinite horizon discounted-cost and ergodic-cost risk-sensitive zero-sum stochastic games for controlled Markov chains with countably many states are analyzed. Upper and lower values for these games are established. The existence of value and saddle-point equilibria in the class of Markov strategies is proved for the discounted-cost game. The existence of value and saddle-point equilibria in the class of stationary strategies is proved under the uniform ergodicity condition for the ergodic-cost game. The value of the ergodic-cost game happens to be the product of the inverse of the risk-sensitivity factor and the logarithm of the common Perron-Frobenius eigenvalue of the associated controlled nonlinear kernels. (C) 2013 Elsevier B.V. All rights reserved.

Zero-Sum Stochastic Games with Partial Information and Average Payoff

We consider a discrete time partially observable zero-sum stochastic game with average payoff criterion. We study the game using an equivalent completely observable game. We show that the game has a value and also we present a pair of optimal strategies for both the players.

Zero miss distance guidance using feedforward and periodic control

There have been attempts at obtaining robust guidance laws to ensure zero miss distance (ZMD) for interceptors with parametric uncertainties. All these laws require the plant to be of minimum phase type to enable the overall guidance loop transfer function to satisfy strict positive realness (SPR). The SPR property implies absolute stability of the closed loop system, and has been shown in the literature to lead to ZMD because it avoids saturation of lateral acceleration. In these works higher order interceptors are reduced to lower order equivalent models for which control laws are designed to ensure ZMD. However, it has also been shown that when the original system with right half plane (RHP) zeros is considered, the resulting miss distances, using such strategies, can be quite high. In this paper, an alternative approach using the circle criterion establishes the conditions for absolute stability of the guidance loop and relaxes the conservative nature of some earlier results arising from assumption of in�nite engagement time. Further, a feedforward scheme in conjunction with a lead-lag compensator is used as one control strategy while a generalized sampled hold function is used as a second strategy, to shift the RHP transmission zeros, thereby achieving ZMD. It is observed that merely shifting the RHP zero(s) to the left half plane reduces miss distances signi�cantly even when no additional controllers are used to ensure SPR conditions.

Signatures of superconducting and pseudogap phases in ultrafast transient reflectivity of Ca(Fe0.927Co0.073)(2)As-2

We present femtosecond time-resolved pump-probe spectroscopic studies of a pseudogap (PG) along with the superconducting (SC) gap in an overdoped iron pnictide Ca(Fe0.927Co0.073)(2)As-2. It is seen that the temperature evolution of the photo-excited quasiparticle (QP) relaxation dynamics, coherently excited A(1g)-symmetric optical phonon and two acoustic phonon dynamics behave anomalously in the vicinity of the superconducting transition temperature T-c. A continuous change in the sign of the experimentally measured transient differential reflectivity Delta R/R signal at the zero time delay between the pump and probe pulses at a temperature of similar to 200K is inferred as an evidence of the emergence of the PG phase around that temperature. This behavior is independent of the pump photon energy and occurs for crystals without the spin density wave phase transition. Copyright (C) EPLA, 2014

Dielectric relaxation and anti-ferromagnetic coupling of BiEu03 and BiGd03

BiEuO3 (BE) and BiGdO3 (BG) are synthesized by the solid-state reaction technique. Rietveld refinement of the X-ray diffraction data shows that the samples are crystallized in cubic phase at room temperature having Fm3m symmetry with the lattice parameters of 5.4925(2) and 5.4712(2) A for BE and BG, respectively. Raman spectra of the samples are investigated to obtain the phonon modes of the samples. The dielectric properties of the samples are investigated in the frequency range from 42 Hz to 1.1 MHz and in the temperature range from 303 K to 673 K. An analysis of the real and imaginary parts of impedance is performed assuming a distribution of relaxation times as confirmed by the Cole-Cole plots. The frequency-dependent maxima in the loss tangent are found to obey an Arrhenius law with activation energy similar to 1 eV for both the samples. The frequency-dependent electrical data are also analyzed in the framework of conductivity formalism. Magnetization of the samples are measured under the field cooled (EC) and zero field cooled (ZFC) modes in the temperature range from 5 K to 300 K applying a magnetic Field of 500 Oe. The FC and ZFC susceptibilities show that BE is a Van Vleck paramagnetic material with antiferromagnetic coupling at low temperature whereas BG is an anti-ferromagnetic system. The results are substantiated by the M-11 loops of the materials taken at 5 K in the ZFC mode. (C) 2014 Elsevier B.V. All rights reserved

Effect of Substrate Temperature on the Microstructure Variation in Sputter-deposited Hydrogenated Amorphous Silicon Thinfilms

Vacancy, void incorporation and Si-H-x configuration in hydrogenated amorphous silicon (a-Si:H) thin films was studied. Films were grown by Direct Current (DC), pulsed DC and Radio Frequency (RF) magnetron sputtering. Fourier Transform Infrared (FTIR) spectroscopic analysis has been carried out on the films and found that, the a-Si: H films grown by DC magnetron sputtering are of good quality compared to pulsed DC and RF deposited films. The effect of Substrate temperature (T-S) on the total hydrogen concentration (C-H), configuration of hydrogen bonding, density (decided by the vacancy and void incorporation) and the microstructure factor (R*) was studied. T-S is found to be an active parameter in affecting the above said properties of the films. The films contain both vacancies and voids. At low hydrogen dilutions the films are vacancy dominated and at high hydrogen dilutions they are void dominated. It is found that T-S favors monohydride (Si-H) bonding at the cost of dihydride (Si-H-2) bonding. This dividing line is at C-H=14 at.% H for DC sputter deposited films. The microstructure structure factor R* is found to be zero for as deposited DC films at T-S=773K. The threshold C-H for void dominated region is found to be C-H=23 at.% H for RF, C-H=18 at.% H for PDC and C-H similar to 14 at.%H for DC sputter deposited films.

Revised density of magnetized nuclear matter at the neutron drip line

We study the onset of the neutron drip in high-density matter in the presence of a magnetic field. It has been found that, for systems having only protons and electrons, in the presence of a magnetic field greater than or similar to 10(15) G, neutronization occurs at a density that is at least an order of magnitude higher compared to that in a nonmagnetic system. In a system with heavier ions, the effect of the magnetic field, however, starts arising at a much higher field, greater than or similar to 10(17) G. These results may have important implications for high-magnetic-field neutron stars and white dwarfs and, in general, in nuclear astrophysics when the system is embedded within a strong magnetic field.

Studies on a frustrated Heisenberg spin chain with alternating ferromagnetic and antiferromagnetic exchanges

We study Heisenberg spin-1/2 and spin-1 chains with alternating ferromagnetic (J(1)(F)) and antiferromagnetic (J(1)(A)) nearest-neighbor interactions and a ferromagnetic next-nearest-neighbor interaction (J(2)(F)). In this model frustration is present due to the non-zero J(2)(F). The model with site spin s behaves like a Haldane spin chain, with site spin 2s in the limit of vanishing J(2)(F) and large J(1)(F)/J(1)(A). We show that the exact ground state of the model can be found along a line in the parameter space. For fixed J(1)(F), the phase diagram in the space of J(1)(A)-J(2)(F) is determined using numerical techniques complemented by analytical calculations. A number of quantities, including the structure factor, energy gap, entanglement entropy and zero temperature magnetization, are studied to understand the complete phase diagram. An interesting and potentially important feature of this model is that it can exhibit a macroscopic magnetization jump in the presence of a magnetic field; we study this using an effective Hamiltonian.

Molecular Dynamics Study of Phonon Screening in Graphene

Phonon interaction with electrons or phonons or with structural defects result in a phonon mode conversion. The mode conversion is governed by the frequency wave-vector dispersion relation. The control over phonon mode or the screening of phonon in graphene is studied using the propagation of amplitude modulated phonon wave-packet. Control over phonon properties like frequency and velocity opens up several wave guiding, energy transport and thermo-electric applications of graphene. One way to achieve this control is with the introduction of nano-structured scattering in the phonon path. Atomistic model of thermal energy transport is developed which is applicable to devices consisting of source, channel and drain parts. Longitudinal acoustic phonon mode is excited from one end of the device. Molecular dynamics based time integration is adopted for the propagation of excited phonon to the other end of the device. The amount of energy transfer is estimated from the relative change of kinetic energy. Increase in the phonon frequency decreases the kinetic energy transmission linearly in the frequency band of interest. Further reduction in transmission is observed with the tuning of channel height of the device by increasing the boundary scattering. Phonon mode selective transmission control have potential application in thermal insulation or thermo-electric application or photo-thermal amplification.

Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

Phonon anomalies, orbital-ordering and electronic raman scattering in iron-pnictide Ca(Fe0.97Co0.03)(2)As-2: temperature-dependent Raman study

We report inelastic light scattering studies on Ca(Fe0.97Co0.03)(2)As-2 in a wide spectral range of 120-5200 cm(-1) from 5 to 300 K, covering the tetragonal to orthorhombic structural transition as well as magnetic transition at T-sm similar to 160 K. The mode frequencies of two first-order Raman modes B-1g and E-g, both involving the displacement of Fe atoms, show a sharp increase below T-sm. Concomitantly, the linewidths of all the first-order Raman modes show anomalous broadening below T-sm, attributed to strong spin-phonon coupling. The high frequency modes observed between 400 and 1200 cm(-1) are attributed to electronic Raman scattering involving the crystal field levels of d-orbitals of Fe2+. The splitting between xz and yz d-orbital levels is shown to be similar to 25 meV, which increases as temperature decreases below T-sm. A broad Raman band observed at similar to 3200 cm(-1) is assigned to two-magnon excitation of the itinerant Fe 3d antiferromagnet.