Isothermal sections of the Ru-Si-Ge, Ru-Ge-Sn and Ru-Si-Sn systems at 900°C

The ternary systems Ruthenium-Silicon-Germanium, Ruthenium-Germanium-Tin and Ruthenium-Silicon-Tin were investigated by powder X-ray diffraction and electron microprobe analysis. Relations at 900 degrees C between solid phases are given and no ternary compound was found. Solubilities and evolution of lattice parameters have been correlated. Maximum mutual solubilities in the Si-Sn and Ge-Sn systems are given. (C) 1998 Elsevier Science S.A.

Sonate en si mineur pour flûte et clavier / J. S. Bach, comp.

Titre uniforme : [Sonates. Flûte, clavier. BWV 1030. Si mineur]

Sonate en si mineur pour flûte et clavier / J. S. Bach, comp.

Titre uniforme : [Sonates. Flûte, clavier. BWV 1030. Si mineur]

Disseny de la instal·lació de climatització amb energia geotèrmica i terra radiant d'una vivenda unifamiliar al terme municipal de la Sentiu de Sió

El treball es centra principalment en el disseny de la instal·lació geotèrmica exterior i del terra radiant de l'interior. El disseny es basa en aconseguir el confort de calefacció i s'aprofita el fet de que s'utilitza un sistema reversible per aportar el màxim confort durant l'èpocade refrigeració. Es realitza un estudi de les possibles alternatives per a la instal·lació, també s'observaran els aparells i accessoris escollits per a la implantació de la instal·lació.

Progress in a-Si:H/c-Si heterojunction emitters obtained by Hot-Wire CVD at 200°C

In this work, we investigate heterojunction emitters deposited by Hot-Wire CVD on p-type crystalline silicon. The emitter structure consists of an n-doped film (20 nm) combined with a thin intrinsic hydrogenated amorphous silicon buffer layer (5 nm). The microstructure of these films has been studied by spectroscopic ellipsometry in the UV-visible range. These measurements reveal that the microstructure of the n-doped film is strongly influenced by the amorphous silicon buffer. The Quasy-Steady-State Photoconductance (QSS-PC) technique allows us to estimate implicit open-circuit voltages near 700 mV for heterojunction emitters on p-type (0.8 Ω·cm) FZ silicon wafers. Finally, 1 cm 2 heterojunction solar cells with 15.4% conversion efficiencies (total area) have been fabricated on flat p-type (14 Ω·cm) CZ silicon wafers with aluminum back-surface-field contact.

Current transport and electroluminescence mechanisms in thin SiO2 films containing Si nanocluster-sensitized erbium ions.

We have studied the current transport and electroluminescence properties of metal oxide semiconductor MOS devices in which the oxide layer, which is codoped with silicon nanoclusters and erbium ions, is made by magnetron sputtering. Electrical measurements have allowed us to identify a Poole-Frenkel conduction mechanism. We observe an important contribution of the Si nanoclusters to the conduction in silicon oxide films, and no evidence of Fowler-Nordheim tunneling. The results suggest that the electroluminescence of the erbium ions in these layers is generated by energy transfer from the Si nanoparticles. Finally, we report an electroluminescence power efficiency above 10−3%. © 2009 American Institute of Physics. doi:10.1063/1.3213386

Electrical pump & probe and injected carrier losses quantification in Er doped Si slot waveguides

Electrically driven Er3+ doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er3+ doped active layers were fabricated in the slot region: a pure SiO2 and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er3+ ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.