Optimization and comparison of single- and dual-pump fiber-optical parametric amplifiers with dispersion fluctuations

Solutions for fiber-optical parametric amplifiers (FOPAs) with dispersion fluctuations are derived using matrix operators. On the basis of the propagation matrix product and the hybrid genetic algorithm, we have optimized and compared single- and dual-pump FOPAs with zero-dispersion-wavelength variations. The simulations prove that the design of FOPAs involves multimodal function optimization problems. The numerical results show that dual-pump FOPAs are highly sensitive to dispersion fluctuations whereas dispersion variations have less impact on the gain of single-pump FOPAs. To increase signal gain and reduce ripple, dual-pump FOPAs, instead of single-pump FOPAs, have to be carefully optimized with a suitable multisegment fiber structure rather than a one-segment fiber structure. The different combinations of multisegment fibers can provide highly different gain properties. The increase in gain is at the cost of the ripple.

Effects of shock waves on spatial distribution of proton beams in ultrashort laser-foil interactions

The characteristics of proton beam generated in the interaction of an ultrashort laser pulse with a large prepulse with solid foils are experimentally investigated. It is found that the proton beam emitted from the rear surface is not well collimated, and a "ring-like" structure with some "burst-like" angular modulation is presented in the spatial distribution. The divergence of the proton beam reduces significantly when the laser intensity is decreased. The "burst-like" modulation gradually fades out for the thicker target. It is believed that the large divergence angle and the modulated ring structure are caused by the shock wave induced by the large laser prepulse. A one-dimensional hydrodynamic code, MED103, is used to simulate the behavior of the shock wave produced by the prepulse. The simulation indicates that the rear surface of the foil target is significantly modified by the shock wave, consequently resulting in the experimental observations. (c) 2006 American Institute of Physics.

Kinetics of picosecond laser pulse induced charge separation and proton transfer in bacteriorhodopsin

Bacteriorhodopsin (BR) films oriented by an electrophoretic method are deposited on a transparent conductive ITO glass. A counterelectrode of copper and gelose gel is used to compose a sandwich-type photodetector with the structure of ITO/BR film/gelose gel/Cu. A single 30-ps laser pulse and a mode-locked pulse train are respectively used to excite the BR photodetector. The ultrafast failing edge and the bipolar response signal are measured by the digital oscilloscope under seven different time ranges. Marquardt nonlinear least squares fitting is used to fit all the experimental data and a good fitting equation is found to describe the kinetic process of the photoelectric signal. Data fitting resolves six exponential components that can be assigned to a seven-step BR photocycle model: BR-->K-->KL-->L-->M-->N-->O-->BR. Comparing tests of the BR photodetector with a 100-ps Si PIN photodiode demonstrates that this type of BIR photocletector has at least 100-ps response time and can also serve as a fast photoelectric switch. (C) 2003 Society of Photo-Optical Instrumentation Engineers.

Reducing group-velocity-dispersion-dependent broadening of stimulated Brillouin scattering slow light in an optical fiber by use of a single pump laser

We propose a method of effectively extending the stimulated Brillouin scattering (SBS) gain bandwidth in a single-mode optical fiber to reduce group-velocity-dispersion (GVD)-dependent pulse spread of SBS slow light. This can be done by overlapping doublet SBS gain spectra synthesized from a single pump laser. Numerical calculations are performed to verify our proposed method. We find that there exists the optimum spectral separation between two center frequencies of the doublet SBS gain spectrum with respect to the inherent spectral width of the pump laser, which makes it possible to effectively reduce the signal pulse broadening due to GVD. We show that the maximum time delay of the amplified signal pulse can be approximately two times longer than that by a previously reported method using a single broadband pump laser. (c) 2008 Optical Society of America.

Zero-broadening SBS slow light propagation in an optical fiber using two broadband pump beams

A new method of tailoring stimulated Brillouin scattering (SBS) gain spectrum for slow light propagation is proposed by use of two Gaussian-shaped broadband pump beams with different powers and spectral widths. The central frequency interval between the two pump beams are carefully set to be two inherent Brillouin frequency shift, ensuring that the gain spectrum of one pump has the same central frequency with the loss spectrum of the other one. Different gain profiles are obtained and analyzed. Among them a special gain profile is found that ensures a zero-broadening of the signal pulse independent of the Brillouin gain. This is owing to the compensation between the positive gain-dependent broadening and the negative GVD (group velocity dispersion) dependent broadening. The relationship of two pump beams is also found for constructing such a gain profile. It provides us a new idea of managing the broadening of SBS-based slow pulse by artificially constructing and optimizing the profile of gain spectrum. (c) 2008 Optical Society of America.

Recombinant protein of heptad-repeat HR212, a stable fusion inhibitor with potent anti-HIV action in vitro

HR212, a recombinant protein expressed in Escherichia coli, has been previously reported to inhibit HIV-1 membrane fusion at low nanomolar level. Here we report that HR212 is effective in blocking laboratory strain HIV-1IIIB entry and replication with EC50 values of 3.92±0.62 and 6.59±1.74 nM, respectively, and inhibiting infection by clinic isolate HIV-1KM018 with EC50 values of 44.44±10.20 nM, as well as suppressing HIV-1- induced cytopathic effect with an EC50 value of 3.04±1.20 nM. It also inhibited HIV-2ROD and HIV-2CBL-20 entry and replication in the μM range. Notably, HR212 was highly effective against T20-resistant strains with EC50 values ranging from 5.09 to 7.75 nM. Unlike T20, HR212 showed stability sufficient to inhibit syncytia formation in a time-of-addition assay, and was insensitive to proteinase K digestion. These results suggest that HR212 has great potential to be further developed as novel HIV-1 fusion inhibitor for treatment of HIV/ AIDS patients, particularly for those infected by T20-resistant variants.

OXYGEN ANALYSES IN HIGH-TC SUPERCONDUCTING FILMS BY MEV PROTON ELASTIC BACKSCATTERING

A technique for analysis of total oxygen contents in high-T(c) superconducting films is demonstrated. It uses elastic backscattering (EBS) of 1.5-2.5 MeV protons. By comparing the H EBS spectra from substrate materials, the absolute oxygen content in the films can be easily calculated. It is estimated that the analysis can be accurate to better than 5% for YBCO films with thicknesses from several hundred angstroms to several microns. Comparisons with RBS are given and advantages of this technique are shown.

MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON

A simple method for the analysis of concentration ratios N/Si and O/Si in silicon nitride and oxide layers on silicon substrate is presented. 1.95-MeV proton elastic backscattering was used to determine the composition and density. A comparison with 2.1-MeV helium Rutherford backscattering measurements is given. Results are in good agreement with each other. The method is especially useful to analyze samples of 20 000 angstrom or thicker layers. We conclude that these two techniques are complementary for the measurements of samples with different thickness. A brief discussion has been given on results.

PROTON-IMPLANTED NEW TYPE SILICON MATERIAL SUBJECTED TO 2-STEP FURNACE ANNEALING

A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantation and two-step conventional furnace annealing is described. During the first annealing step (600-degrees-C), implanted hydrogen atoms move towards the damage region and then coalesce into hydrogen gas bubbles at the residual defect layer. During the second annealing step (1180-degrees-C) these bubbles do not move due to their large volume. Structural defects are formed around the bubbles at a depth of approximately 0.5-mu-m. The defect layer results in a high resistivity value. Experiments show that the quality of the surface layer has been improved because the surface Hall mobility increased by 20%. The sample was investigated by transmission electron microscopy.

A transmission electron microscopy study of microstructural defects in proton implanted silicon

The microstructure of silicon on defect layer, a new type of silicon-on-insulator material using proton implantation and two-step annealing to obtain a high resistivity buried layer beneath the silicon surface, has been investigated by transmission electron microscopy. Implantation induced a heavily damaged region containing two types of extended defects involving hydrogen: {001} platelets and {111} platelets. During the first step annealing, gas bubbles and {111} precipitates formed. After the second step annealing, {111} precipitates disappeared, while the bubble microstructure still remained and a buried layer consisting of bubbles and dislocations between the bubbles was left. This study shows that the dislocations pinning the bubbles plays an important role in stabilizing the bubbles and in the formation of the defect insulating layer. (C) 1996 American Institute of Physics.

An asymmetric MOSFET-C band-pass filter with on-chip charge pump auto-tuning

An asymmetric MOSFET-C band-pass filter(BPF)with on chip charge pump auto-tuning is presented.It is implemented in UMC (United Manufacturing Corporation)0.18μm CMOS process technology. The filter system with auto-tuning uses a master-slave technique for continuous tuning in which the charge pump OUtputs 2.663 V, much higher than the power supply voltage, to improve the linearity of the filter. The main filter with third order low-pass and second order high-pass properties is an asymmetric band-pass filter with bandwidth of 2.730-5.340 MHz. The in-band third order harmonic input intercept point(HP3) is 16.621 dBm,wim 50 Ω as the source impedance. The input referred noise iS about 47.455μVrms. The main filter dissipates 3.528 mW while the auto-tuning system dissipates 2.412 mW from a 1.8 V power supply. The filter with the auto-tuning system occupies 0.592 mm~2 and it can be utilized in GPS (global positioning system)and Bluetooth systems.