Solid-state reference and ion-selective electrodes : towards portable potentiometric sensing

Potentiometric sensors are very attractive tools for chemical analysis because of their simplicity, low power consumption and low cost. They are extensively used in clinical diagnostics and in environmental monitoring. Modern applications of both fields require improvements in the conventional construction and in the performance of the potentiometric sensors, as the trends are towards portable, on-site diagnostics and autonomous sensing in remote locations. The aim of this PhD work was to improve some of the sensor properties that currently hamper the implementation of the potentiometric sensors in modern applications. The first part of the work was concentrated on the development of a solid-state reference electrode (RE) compatible with already existing solid-contact ion-selective electrodes (ISE), both of which are needed for all-solid-state potentiometric sensing systems. A poly(vinyl chloride) membrane doped with a moderately lipophilic salt, tetrabutylammonium-tetrabutylborate (TBA-TBB), was found to show a satisfactory stability of potential in sample solutions with different concentrations. Its response time was nevertheless slow, as it required several minutes to reach the equilibrium. The TBA-TBB membrane RE worked well together with solid-state ISEs in several different situations and on different substrates enabling a miniature design. Solid contacts (SC) that mediate the ion-to-electron transduction are crucial components of well-functioning potentiometric sensors. This transduction process converting the ionic conduction of an ion-selective membrane to the electronic conduction in the circuit was studied with the help of electrochemical impedance spectroscopy (EIS). The solid contacts studied were (i) the conducting polymer (CP) poly(3,4-ethylienedioxythiophene) (PEDOT) and (ii) a carbon cloth having a high surface area. The PEDOT films were doped with a large immobile anion poly(styrene sulfonate) (PSS-) or with a small mobile anion Cl-. As could be expected, the studied PEDOT solid-contact mediated the ion-toelectron transduction more efficiently than the bare glassy carbon substrate, onto which they were electropolymerized, while the impedance of the PEDOT films depended on the mobility of the doping ion and on the ions in the electrolyte. The carbon cloth was found to be an even more effective ion-to-electron transducer than the PEDOT films and it also proved to work as a combined electrical conductor and solid contact when covered with an ion-selective membrane or with a TBA-TBB-based reference membrane. The last part of the work was focused on improving the reproducibility and the potential stability of the SC-ISEs, a problem that culminates to the stability of the standard potential E°. It was proven that the E° of a SC-ISE with a conducting polymer as a solid contact could be adjusted by reducing or oxidizing the CP solid contact by applying current pulses or a potential to it, as the redox state of the CP solid-contact influences the overall potential of the ISE. The slope and thus the analytical performance of the SC-ISEs were retained despite the adjustment of the E°. The shortcircuiting of the SC-ISE with a conventional large-capacitance RE was found to be a feasible instrument-free method to control the E°. With this method, the driving force for the oxidation/reduction of the CP was the potential difference between the RE and the SC-ISE, and the position of the adjusted potential could be controlled by choosing a suitable concentration for the short-circuiting electrolyte. The piece-to-piece reproducibility of the adjusted potential was promising, and the day-today reproducibility for a specific sensor was excellent. The instrumentfree approach to control the E° is very attractive considering practical applications.

Emission, kinetic and magnetic phenomena in rare-earth and transition metal doped ZnSe single crystals

In this work emission, optical, electrical and magnetic properties of the d- and f- elements doped zinc selenide crystals were investigated within a wide temperature range. Doping was performed in various technological processes: during the growth by chemical vapor transport method; by thermal diffusion from the Bi or Zn melt. Concentration of the doping impurity in the crystals was controlled by amount of the dopant in the source material or by its concentration in the doping media. Special interest in the work was paid to the influence of the different concentrations of Cr and Yb impurities on ZnSe crystals’ properties, correlations between observed effects and similarities with the Ni, Mn and Gd dopants are analysed. Possibility of formation of the excitons bound to the doping d-ions was shown. In contrast to this, it was observed that f-elements do not bound excitons, but prevent formation of excitons bound to some uncontrolled impurities. A mechanism of Cr doping impurity interaction with background impurities and zinc selenide structural defects was proposed based on experimental data. An assumption about resonant energy transfer between double charged chromium ions and complexes based on crystals’ vacancy defects was made. A correlation between emission and magnetic properties of the d- ions doped samples was established. Based on this correlation a mechanism explaining the concentration quench of the emission was proposed. It was found that f-ions bind electrically active shallow and deep donor and acceptor states of background impurity to electrically neutral complexes. This may be observed as “purification” of ZnSe crystals by doping with the rare-earth elements, resulting i tendency of the properties of f-ion doped crystals to the properties of intrinsic crystals, but with smaller concentration of uncontrolled native and impurity defects. A possible interpretation of this effect was proposed. It was shown that selenium substituting impurities decrease efficiency of the Yb doping. Based on this experimental results an attempt to determine ytterbium ion surroundings in the crystal lattice was made. It was shown that co-doping of zinc selenide crystals with the d- and f- ions leads to the combination of the impurities influence on the material’s properties. On the basis of obtained data an interaction mechanism of the d- and f-elements co-dopants was proposed. Guided by the model of the ytterbium ion incorporation in the selenide sublattice of the ZnSe crystals, an assumption about stabilization of single charged chromium ions in the zinc sublattice crystal nodes, by means of formation of the local charge compensating clusters, was made.

Blue and Uv-Emitting Upconversion Nanoparticles: Synthesis and (Bio) Analytical Applications.

Rare-earth based upconverting nanoparticles (UCNPs) have attracted much attention due to their unique luminescent properties. The ability to convert multiple photons of lower energy to ones with higher energy through an upconversion (UC) process offers a wide range of applications for UCNPs. The emission intensities and wavelengths of UCNPs are important performance characteristics, which determine the appropriate applications. However, insufficient intensities still limit the use of UCNPs; especially the efficient emission of blue and ultraviolet (UV) light via upconversion remains challenging, as these events require three or more near-infrared (NIR) photons. The aim of the study was to enhance the blue and UV upconversion emission intensities of Tm3+ doped NaYF4 nanoparticles and to demonstrate their utility in in vitro diagnostics. As the distance between the sensitizer and the activator significantly affect the energy transfer efficiency, different strategies were explored to change the local symmetry around the doped lanthanides. One important strategy is the intentional co-doping of active (participate in energy transfer) or passive (do not participate in energy transfer) impurities into the host matrix. The roles of doped passive impurities (K+ and Sc3+) in enhancing the blue and UV upconversions, as well as in influencing the intense UV upconversion emission through excess sensitization (active impurity) were studied. Additionally, the effects of both active and passive impurity doping on the morphological and optical performance of UCNPs were investigated. The applicability of UV emitting UCNPs as an internal light source for glucose sensing in a dry chemistry test strip was demonstrated. The measurements were in agreement with the traditional method based on reflectance measurements using an external UV light source. The use of UCNPs in the glucose test strip offers an alternative detection method with advantages such as control signals for minimizing errors and high penetration of the NIR excitation through the blood sample, which gives more freedom for designing the optical setup. In bioimaging, the excitation of the UCNPs in the transparent IR region of the tissue permits measurements, which are free of background fluorescence and have a high signal-to-background ratio. In addition, the narrow emission bandwidth of the UCNPs enables multiplexed detections. An array-in-well immunoassay was developed using two different UC emission colours. The differentiation between different viral infections and the classification of antibody responses were achieved based on both the position and colour of the signal. The study demonstrates the potential of spectral and spatial multiplexing in the imaging based array-in-well assays.

Far infrared optical properties of V and Cr doped Sb2Te3 /

The far infrared reflectance of Sb2Te3 , Sbi.97Vo.o3Te3 and Sbi.94Cr .o6Te3 was measured near normal incidence at different temperatures (between 45K and 300K). The direct current resistivities of the above samples were also measured between the temperatures of 4K and 300K. Also Kramers Kronig (KK) analyses were performed on the reflectance spectra to obtain the optical conductivities. In the doped samples, it was observed that a phonon at 62cm-1 softens to about 55cm-1 on decreasing the temperature from 295K to 45K. Also, it was observed that the plasma frequency of the doped samples is independent of doping. The scattering rate for the vanadium doped sample was seen to be greater than that for the chromium doped sample despite the fact that vanadium impurity density is less than that of chromium. The Drude-Lorentz model fits to the KK optical conductivity show that the samples used in this work are conventional metals. Definitive measurements of the temperature dependence of the scattering rate across the ferromagnetic transition await equipment changes allowing measurements at low temperature using the mercury cadmium telluride (MCT) detector.

Study on the properties of piezoelectric materials and manganese-based oxide perovskites /

Perovskite type piezoelectric and manganese oxide materials have gained a lot of attention in the field of device engineering. Lead zirconium titananium oxide (PbZri.iTiiOa or PZT) is a piezoelectric material widely used as sensors and actuators. Miniaturization of PZTbased devices will not only perfect many existing products, but also opens doors to new applications. Lanthanum manganese oxides Lai-iAiMnOa (A-divalent alkaline earth such as Sr, Ca or Ba) have been intensively studied for their colossal magnetoresistance (CMR) properties that make them applicable in memory cells, magnetic and pressure sensors. In this study, we fabricate PZT and LSMO(LCMO) heterostructures on SrTiOa substrates and investigate their temperature dependency of resistivity and magnetization as a function of the thickness of LSMO(LCMO) layer. The microstructure of the samples is analysed through TEM. In another set of samples, we study the effect of application of an electric field across the PZT layer that acts as an external pressure on the manganite layer. This verifies the correlation of lattice distortion with transport and magnetic properties of the CMR materials.

Electrical properties of some single crystal dodecaborides /|nby Jyoti Burte. -- 260 St. Catharines [Ont. : s. n.],

PreVi011.3 ':i or~ : indicat e('. tk~t ho t~)rE's sed ~-Al B 12 1i~2, ~' a semiconductor. r:Toreove r , the s i mpl.(~ electronic t heory also indi cates that ~ -AIB1 2 should be a semico nductor, since thf're is one nonbonding e 'Le ctrofl per AlB12- uni t. JPor these reasons, we decided to measure t he electrical n ropert i ~ s of ~ -AlB1 2 single crystal s . Singl e crystal s of¥- AIB 12 ab ou t 1 x 1 r1n1 . size were grown from a copper mel t at 12500 C. The melt technique coupled. 1,vi th slow cooling vilas used because of i ts advantages such as : siTYInle set- up of the expe rimon t ; only e ;l.sil y available c hemi cals are required and it i s a c omparatively strair::bt forvvard y,le t hod still yielding crystal s big enouGh for OtU' purpose . Copper rms used as a solvent , i nst8ad of previOl.wly used aluminum , because it allows c.l.'ystal growth at hig he r t emneratures. HovlGver, the cry s tals of ] -AlB12 shm'red very hi gh res i s t ance a t r oom temperature . From our neasureJ'lents we conclude that the r esistivity of j3- Al B12 is, at least, given as ~ = 4. x 107 oblD .em •• Those results are inc ons i s t ent wi 'uh the ones .. reported by IIiss Khin fo r bot- pressed j3-AlB12 g i ven a s = 7600 ohm . em . or I e s s . ' Since tbe hot pressing was done at about 800 - ' 9000C i n ~ rap hi te moul ds 1,7i th 97% AlB12- p oVJder, vie thi nk there is pas s ib i 1 i ty th a.t lower borides or borot] carbide are , being formed, ':.Jhich are k11 own to be good semiconductors . v7e tried to ro-pe r-AlB12 by addi'J,'?: agents s uch as l:Ig , IG.-InO 4. ' HgS04 , KI12PO 4·' etc. to t he melt .. However , all these re age 11 t eel either reduced the yield and size of t lJe crystals or r;ave crystals of high r esis'can ce again. We think tba t molten copper keeps t he i mpurities off . There is also a pos s i bil i ty t hc:!,t these doping agents get oxidi~::;ed at '1 250°C • Hence, we co ~ clud e that J -AIB12 has v~ ry high r es i stance at r oom temperature . This was a l s o C011 - fi rmed by checki ng the siYlgle and. polycrystals of .~-AIB12 from Norton Co., Ontario and Cooper Nletallurgical Association. Boron carbide has been reported to be a semiconductor with ~ - 0.3 to 0.8 ohm . cm. for hotpres sed s araples. Boron carbide b e inq: struct urally related to ¥-AIB12 , we de cided to study the electrical prone rties of it~ Single crystals. These crystals were cut from a Single melt grovvn crystal a t Norton Co., Ontario. The resistivity of th," se crystal s was measured by the Van der Pam-v' s ~ nethod, which \vas very c onvenient fo r our crystal sha-pp.s. Some of the crystals showed resistivity ~ == 0.50 ob,Tn.cr] . i n agreement with the previously reported results . However , a few crystals showed lower resistivity e.g . 0 .13 and 0.20 ohm.cra • • The Hall mobility could .not be measured and th8reiore i s lower than 0 .16 em 2 v - 1 sec -1 • This is in agreement \vith t he re1)orted Hall mobility for pyrolytic boron . _ 2 -1 -1 carbide as 0.13 cm v sec • We also studied the orientation of the boron carbide crystals by the Jjaue-method. The inclination of c-axis with res pect to x-ray be81Il was det ermined . This was found to be 100 t o 20° f or normal resistivity sarnples (0.5 ohm . cm.) and 27 - 30° for t he lower r esistivity samples (0.1 ~5 to 0.20 ohm.cm .). This indica tes the possibility that th.e r es if.1tivity of B13C3 i s orientation dependent.

Preparation of SrMgx-Ru1-xO3 thin films by pulsed laser deposition /

SrMg^Rui-iOa thin films were made by using pulsed laser deposition on SrTiOa (100) substrates in either O2 or Ar atmosphere. The thin films were characterized by x-ray diffraction, energy dispersive x-ray microanalysis, dc resistivity measurement, and dc magnetization measurement. The effect of Mg doping was observed. As soon as the amount of Mg increased in SrMg-cRui-iOa thin films, the magnetization decreased, and the resistivity increased. It had little effect on the Curie temperature (transition temperature). The magnetization states of SrMgiRui-iOa thin films, for x < 0.15, are similar to SrRuOs films. X-ray diffraction results for SrMga-Rui-iOa thin films made in oxygen showed that the films are epitaxial. The thin films could not be well made in Ar atmosphere during laser ablation as there was no clear peak of SrMg^Rui-iOa in x-ray diffraction results. Substrate temperatures had an effect on the resistivity of the films. The residual resistivity ratios were increased by increasing substrate temperature. It was observed that the thickness of thin films are another factor for film quality: Thin films were epitaxial, but thicker films were not epitaxial.

Crystallinity, Magnetic and Electrical Properties of Bi doped LaVO3

We report the results of crystal structure, magnetization and resistivity measurements of Bi doped LaVO3. X-ray diffraction (XRD) shows that if doping Bi in the La site is less than ten percent, the crystal structure of La1-xBixVO3 remains unchanged and its symmetry is orthorhombic. However, for higher Bi doping (>10%) composite compounds are found where the XRD patterns are characterized by two phases: LaVO3+V2O3. Energy-dispersive analysis of the x-ray spectroscopy (EDAX) results are used to find a proper atomic percentage of all samples. The temperature dependence of the mass magnetization of pure and single phase doped samples have transition temperatures from paramagnetic to antiferromagnetic region at TN=140 K. This measurement for bi-phasic samples indicates two transition temperatures, at TN=140 K (LaVO3) and TN=170 K (V2O3). The temperature dependence of resistivity reveals semiconducting behavior for all samples. Activation energy values for pure and doped samples are extracted by fitting resistivity versus temperature data in the framework of thermal activation process.

Design of Resistivity Instrumentation for a He3 Cryostat and its Application to the Charge Density Wave Superconductor CuxTiSe2

Fermi patches in quasi-two dimensional charge density waves (CDW) have not described the connection to superconductivity (SC) according to theory adequately at this point in time. The connection between CDW and SC in the quasi-two dimensional material CuxTiSe2 is an interesting one which might reveal mechanisms in unconventional superconductors. A previous Brock graduate student grew crystals of CuxTiSe2. The precise doping of the samples was not known. In order to determine the doping parameter x in CuxTiSe2, a sensitive resistivity measurement system was necessary. A new resistivity measurement system was designed and implemented utilizing an Infrared Labs HDL-10 He3 cryostat. By comparing with data from the literature, doping of two samples was investigated using the new measurement system and a Quantum Design Magnetic Property Measurement System (MPMS). Methods for determining the doping revealed that the old resistivity system would not be able to determine the CDW transition temperature of highly doped samples or doping for elongated samples due to electronic noise. Doping in one sample was found to be between x=0.06 and x=0.065. Values of doping in the second sample had a discrepancy but could be explained by incorrect sample orientation.

Structural, Magnetic and Thermal Studies of Ce1-xEuxCrO3 Nano-Powders

A new series of nano-sized Ce1-xEuxCrO3 (x = 0.0 to 1.0) with an average particle size of 50 - 80 nm were synthesized using a solution combustion method. Nano-powders Ce1-xEuxCrO3 with the canted antiferromagnetic property exhibited interesting magnetic behaviours including the reversal magnetization and the exchange bias effect. The effect of europium doping as the ion with the smaller radius size and different electron con figuration on structural, magnetic and thermal properties of Ce1-xEuxCrO3 were investigated using various experimental techniques, i.e. DC/AC magnetic susceptibility, heat capacity, thermal expansion, Raman scattering, X-ray photoemission spectroscopy, transmission/scanning electron microscopy, X-ray powder diffraction and neutron scattering. An exchange bias effect, magnetization irreversibility and AC susceptibility dispersion in these samples confirmed the existence of the spin disorder magnetic phase in Ce1-xEuxCrO3 compounds. The exchange bias phenomenon, which is assigned to the exchange coupling between glassy-like shell and canted antiferromagnetic core, showed the opposite sign in CeCrO3 and EuCrO3 at low temperatures, suggesting different exchange interactions at the interfaces in these compounds. The energy level excitation of samples were examined by an inelastic neutron scattering which was in good agreement with the heat capacity data. Neutron scattering analysis of EuCrO3 was challenging due to the large neutron absorption cross-section of europium. All diffraction patterns of Ce1-xEuxCrO3 showed the magnetic peak attributed to the antiferromagnetic Cr3+ spins while none of the diffraction patterns could detect the magnetic ordering of the rare-earth ions in these samples.

Entre Hippocrate et De Coubertin: les obligations professionnelles des médecins face au dopage sportif

Le contexte particulier du dopage suscite de nombreuses questions à l'égard des obligations et de la responsabilité des médecins. Suivant le Code médical du Mouvement olympique (2005), les médecins doivent respecter les principes de l'éthique médicale et ceux de l'éthique sportive, comme le fairplay. Il arrive parfois que l'éthique sportive entre en conflit avec l'éthique médicale. Les médecins sont alors confrontés à d'importants dilemmes qui peuvent engager leur responsabilité professionnelle et civile. Ces dilemmes se situent notamment au niveau de l'obligation de soins et du secret professionnel. Par exemple, les médecins peuvent-ils prescrire des médicaments pour contrer les effets néfastes du dopage afin de préserver la santé des athlètes ? La question de la recherche sur l'amélioration de la performance est également préoccupante. En raison du caractère clandestin de cette recherche, il y a lieu de se demander si les médecins qui y participent respectent leurs obligations professionnelles. L'analyse des principaux instruments normatifs applicables en l'espèce démontre que les médecins ne doivent pas être placés dans une situation telle qu'ils doivent refuser de suivre des athlètes de crainte d'être accusés de dopage. De plus, le secret professionnel devrait être maintenu lorsqu'un médecin suit un athlète dopé afin de préserver la relation de confiance. Finalement, l'analyse du contexte de la recherche portant sur l'amélioration de la performance révèle que les médecins ne respectent pas toujours leurs obligations. Les médecins fautifs risquent donc d'engager leur responsabilité professionnelle et civile et de faire face à des sanctions sévères.

Structure et propriétés électroniques de nanotubes de carbone en solution polyélectrolyte

Thèse numérisée par la Division de la gestion de documents et des archives de l'Université de Montréal

La protection des données de santé des athlètes dans le cadre de la lutte contre le dopage

Le dopage fait l’objet d’une intense lutte par les autorités sportives. Cet article s’intéresse à l’encadrement des renseignements personnels des athlètes qui y sont soumis. En effet, la lutte au dopage s’opère principalement par le traitement des nombreuses informations de santé que les athlètes fournissent dans le cadre de certaines procédures. L’article étudie dans une première partie les fondements de la lutte antidopage et la structure du sport aux niveaux international et canadien dans le but de contextualiser l’analyse de la protection des renseignements personnels. La seconde partie porte dans un premier temps sur le cadre général de la protection des renseignements personnels, puis sur les deux « outils » de la lutte au dopage : les autorisations pour usage à des fins thérapeutiques et les contrôles antidopage. Dans le premier cas, la protection des renseignements personnels s’effectue selon le modèle des aires de partage, où plusieurs personnes ont un accès simultané aux renseignements afin de fournir une prestation donnée. Dans le second cas, la protection est plus classique mais a la particularité de se confondre partiellement avec les mesures visant à protéger l’intégrité ­ et la validité ­ des contrôles.

Développement de composés conjugués en étoile de première génération incluant des liens azométhines et études électrochimiques et photophysiques

Les matériaux conjugués sont de nos jours très utilisés dans de nombreuses applications ainsi qu’en recherche. L’enchainement des liaisons π-σ-π permet la délocalisation des électrons et d’obtenir différentes propriétés comme la conduction, la fluorescence, la chélation, etc. Ainsi, de nombreux dispositifs utilisent ces caractéristiques en vue d’obtenir de nouveaux matériaux révolutionnaires comme les cellules solaires, les transistors à effet de champs, les dispositifs électrochromiques, etc.. Les dispositifs électrochromiques font partie des dispositifs en vogue. Ils sont capables de changer de couleur selon le potentiel électrique appliqué. Ils se distinguent par la simplicité du mode de conception et ils ne nécessitent pas de fonctionner dans des conditions drastiques comme une atmosphère contrôlée. Ces dispositifs sont actuellement utilisés et commercialisés comme fenêtre intelligente, camouflage, papier électronique et carte de visite personnalisée pour n’en nommer que quelques-uns. Deux propriétés sont essentielles pour que des composés puissent être utilisés dans ces familles de dispositifs : la réversibilité à l’oxydation et la stabilité à l’air et à la lumière. Dans le groupe de recherche du professeur W.G. Skene, l’axe principal de recherche est basé sur la conception de nouveaux matériaux conducteurs comportant des liaisons azométhines. Les principaux matériaux étudiés sont des dérivés de thiophènes et de fluorènes. De précédents résultats ont montré que plusieurs produits issus de la réaction de condensation entre les dérivés du 2,5-diaminothiophène et de thiophènes diformylés menaient à des produits possédant d’excellentes propriétés photophysiques et électrochimiques. C’est en partant de ces résultats encourageants qu’il a été choisi de synthétiser une nouvelle famille de produits avec un nouveau substrat fonctionnalisé. Ce dernier possède d’excellentes propriétés électrochimiques et photophysiques : la triphénylamine. Deux familles de produits ont été synthétisées qui possèdent toutes comme cœur une triphénylamine. Cette dernière a été modifiée de façon à créer une, deux ou trois liaisons azométhines avec différents thiophènes. Deux dérivés du thiophène ont été choisis afin d’étudier l’influence des groupements donneurs et accepteurs sur ces nouveaux types de composés encore jamais étudiés. Les résultats des différentes synthèses et analyses ont été effectués par RMN, spectrométrie de masse, spectrométrie d’absorbance UV-Visible, fluorescence et voltampérométrie cyclique sont rapportées dans le présent recueil.

La société de l'amélioration : le renversement de la perfectibilité humaine, de l'humanisme des Lumières à l'humain augmenté

Thèse réalisée en cotutelle, entre l'Université de Montréal, au Département de Sociologie, et l'Université de Rennes 1, à la Faculté de Droit et de Science Politique