Involvement of ANXA5 and ILKAP in Susceptibility to Malignant Melanoma

Single nucleotide-polymorphisms (SNPs) are a source of diversity among human population, which may be responsible for the different individual susceptibility to diseases and/or response to drugs, among other phenotypic traits. Several low penetrance susceptibility genes associated with malignant melanoma (MM) have been described, including genes related to pigmentation, DNA damage repair and oxidative stress pathways. In the present work, we conducted a candidate gene association study based on proteins and genes whose expression we had detected altered in melanoma cell lines as compared to normal melanocytes. The result was the selection of 88 loci and 384 SNPs, of which 314 fulfilled our quality criteria for a case-control association study. The SNP rs6854854 in ANXA5 was statistically significant after conservative Bonferroni correction when 464 melanoma patients and 400 controls were analyzed in a discovery Phase I. However, this finding could not be replicated in the validation phase, perhaps because the minor allele frequency of SNP rs6854854 varies depending on the geographical region considered. Additionally, a second SNP (rs6431588) located on ILKAP was found to be associated with melanoma after considering a combined set of 1,883 MM cases and 1,358 disease-free controls. The OR was 1.29 (95% CI 1.12-1.48; p-value= 4x10(-4)). Both SNPs, rs6854854 in ANXA5 and rs6431588 in ILKAP, show population structure, which, assuming that the Spanish population is not significantly structured, suggests a role of these loci on a specific genetic adaptation to different environmental conditions. Furthermore, the biological relevance of these genes in MM is supported by in vitro experiments, which show a decrease in the transcription levels of ANXA5 and ILKAP in melanoma cells compared to normal melanocytes.

Avaliação comparativa dos riscos à saúde dos trabalhadores de enfermagem em Centro de Material e Esterilização

Estudo piloto para a avaliação da aplicabilidade de instrumento de pesquisa nas versões impressa e eletrônica sobre riscos e agravos à saúde do trabalhador. Objetiva avaliar comparativamente a aplicação do instrumento sobre riscos e danos no formato eletrônico e formato impresso em trabalhadores de enfermagem. O local do estudo foi o Centro de Material e Esterilização (CME) e a população os profissionais da unidade. Os participantes foram divididos através de sorteio em dois grupos de vinte e oito trabalhadores nomeados grupo impresso e grupo eletrônico. O primeiro grupo respondeu o questionário em formato impresso e o segundo o mesmo questionário no formato eletrônico através de uma home page. Os dados foram analisados através da estatística descritiva simples. Após a aplicação do questionário nos dois formatos, obteve-se resposta de 27 trabalhadores, sendo 20 (71,4%) do grupo impresso e 7 (36,4%) do grupo eletrônico. A aplicação do questionário revelou que no formato eletrônico não há possibilidade de item sem resposta e a análise dos dados pode ser imediata; é uma metodologia limpa e possui menor custo direto de aplicação. Entretanto houve uma taxa de resposta menor que no questionário no formato impresso. Na forma impressa, os pontos negativos foram o custo direto de aplicação mais elevado, possibilidade maior de erros, maior tempo gasto para a coleta e criação de banco de dados. Como pontos positivos tem-se a possibilidade de aplicação a trabalhadores sem experiência em informática, consequentemente apresenta maior taxa de respostas. Ambos os grupos observaram que o questionário possui boas instruções e fácil compreensão, além de curto tempo para resposta. Os trabalhadores observaram a existência de riscos físicos, ergonômicos, químicos, biológicos e de acidentes. As varizes, problemas osteomusculares e problemas oculares foram os mais relatados pelos profissionais como agravos à saúde relacionada ao trabalho. Concluiu-se que este grupo de trabalhadores ainda não está preparado para a realização de pesquisas no formato eletrônico e que a forma impressa ainda tem melhor aceitabilidade. A diferença de respostas nos grupos deveu-se a características pessoais dos respondentes e não a forma de coleta de dados. Ambas as metodologias identificaram fatores de riscos e agravos à saúde dos trabalhadores. Conclui-se que deve ser indicada a aplicação do questionário eletrônico em trabalhadores capacitados no uso da tecnologia computacional. Quanto à evidência da análise dos dados coletados, sugere-se a melhoria da planta física; contratação de profissionais capacitados; treinamento em equipe relacionado aos riscos e medidas de proteção a saúde do trabalhador.

Influence of annealing temperature on structure, optical loss and laser-induced damage threshold of TiO2 thin films

TiO2 thin films are prepared on fused silica with conventional electron beam evaporation deposition. After annealed at different temperatures for 4h, the spectra and XRD patterns of the TiO2 thin film are obtained. Weak absorption of coatings is measured by the surface thermal lensing technique, and laser-induced damage threshold (LIDT) is determined. It is found that with the increasing annealing temperature, the transmittance of TiO2 films decreases. Especially when coatings are annealed at high temperature over 1173K, the optical loss is very serious. Weak absorption detection indicates that the absorption of coatings decreases firstly and then increases, and the absorption and defects play major roles in the LIDT of TiO2 thin films.

Influence of fat content on the quality and shelf life of cured sardines

The paper presents results of studies on the effect of seasonal variations in the fat content on the quality and shelf life of dry cured, pickle cured and smoke cured oil sardines. The merits and defects of each method of curing during different seasons are discussed.

Plasma biochemical responses of the planktivorous filter-feeding silver carp (Hypophthalmichthys molitrix) and bighead carp (Aristichthys nobilis) to prolonged toxic cyanobacterial blooms in natural waters

The planktivorous filter-feeding silver carp (Hypophthalmichthys molitrix) and bighead carp (Aristichthys nobilis) are the attractive candidates for bio-control of plankton communities to eliminate odorous populations of cyanobacteria. However, few studies focused on the health of such fishes in natural water body with vigorous toxic blooms. Blood parameters are useful and sensitive for diagnosis of diseases and monitoring of the physiological status of fish exposed to toxicants. To evaluate the impact of toxic cyanobacterial blooms on the planktivorous fish, 12 serum chemistry variables were investigated in silver carp and bighead carp for 9 months, in a large net cage in Meiliang Bay, a hypereutrophic region of Lake Taihu. The results confirmed adverse effects of cyanobacterial blooms on two phytoplanktivorous fish, which mainly characterized with potential toxicogenomic effects and metabolism disorders in liver, and kidney dysfunction. In addition, cholestasis was intensively implied by distinct elevation of all four related biomarkers (ALP, GGT, DBIL, TBIL) in bighead carp. The combination of LDH, AST activities and DBIL, URIC contents for silver carp, and the combination of ALT. ALP activities and TBIL, DBIL. URIC concentrations for bighead carps were found to most strongly indicate toxic effects from cyanobacterial blooms in such fishes by a multivariate discriminant analysis. (C) 2009 Elsevier B.V. All rights reserved.

Raman scattering study on Ga1-xMnxAs prepared by Mn ions implantation, deposition and post-annealing

Raman scattering measurements have been performed in Ga1-xMnxAs crystals prepared by Mn ions implantation, deposition, and post-annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs-like phonon modes, where the GaAs-like LO and TO phonons are found to be shifted by approximately 4 and 2 cm(-1), respectively, in the lower frequency direction compared to those observed from the unimplanted surface of the sample. The weak vibrational modes observed are assigned to hausmannite Mn3O4 like. The coupled LO-phonon plasmon mode (CLOPM), and defects and As related vibrational modes caused by Mn ions implantation, deposition, and post-annealing are also observed. The compositional dependence of GaAs-like LO phonon frequency is developed for strained and unstrained conditions and then using the observed LOGaAs peak, the Mn composition is evaluated to be 0.034. Furthermore, by analyzing the intensity of CLOPM and unscreened LOGaAs phonon mode, the hole density is evaluated to be 1.84 x 10(18) cm(-3). (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Effect of critical thickness on structural and optical properties of InxGa1-xN/GaN multiple quantum wells

InGaN/GaN multiquantum-well (MQW) structures grown by metalorganic chemical-vapor deposition on n-type GaN and capped by p-type GaN were investigated by cross-sectional transmission electron microscopy, double crystal x-ray diffraction, and temperature-dependent photoluminescence. For the sample with strained-layer thicknesses greater than the critical thicknesses, a high density of pure edge type threading dislocations generated from MQW layers and extended to the cap layer was observed. These dislocations result from a relaxation of the strained layers when their thicknesses are beyond the critical thicknesses. Because of indium outdiffusion from the well layers due to the anneal effect of Mg-doped cap layer growth and defects generated from strain relaxation, the PL emission peak was almost depressed by the broad yellow band with an intensity maximum at 2.28 eV. But for the sample with strained-layer thicknesses less than the critical thicknesses, it has no such phenomenon. The measured critical thicknesses are consistent with the calculated values using the model proposed by Fischer, Kuhne, and Richter. (C) 2004 American Institute of Physics.

Effect of ion flux on recrystallization and resistance lowering in phosphorus-implanted (0001)-oriented 4H-SiC

High-dose ion implantation of phosphorus into 4H-SiC (0001) has been investigated with three different ion fluxes ranging from 1.0 to 4.0 x 10(12) P(+)cm(-2.)s(-1) and keeping the implantation dose constant at 2.0 x 10(15) P(+)cm(-2). The implantations are performed at room temperature and subsequently annealed at 1500 degrees C. Photoluminescence and Raman scattering are employed to investigate the implantation-induced damages and the residual defects after annealing. The electrical properties of the implanted layer are evaluated by Hall effect measurements on the sample with a van der Pauw configuration. Based on these results, it is revealed that the damages and defects in implanted layers can be greatly reduced by decreasing the ion flux. Considering room temperature implantation and a relatively low annealing temperature of 1500 degrees C, a reasonably low sheet resistance of 106 Omega/square is obtained at ion flux of 1.0 x 10(12) P(+)cm(-2.)s(-1) with a donor concentration of 4.4 x 10(19)cm(-3).

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Low temperature (LT) AlN interlayer and insertion of superlattice are two effective methods to reduce crack and defects for GaN grown on Si substrate. In this paper, the influence of two kinds of buffer on stress, morphology and defects of GaN/Si are studied and discussed. The results measured by optical microscope and Raman shift show that insertion of superlattice is more effective than insertion of LT-AlN in preventing the formation of cracks in GaN grown on Si substrate. Cross-sectional TEM images show that the not only screw but edge-type dislocation densities are greatly reduced by using the superlattice buffer. (c) 2006 Elsevier B.V. All rights reserved.

Native deep level defects in ZnO single crystal grown by CVT method - art. no. 68410I

Hall effect, photoluminescence (PL), infrared absorption, deep level transient spectroscopy (DLTS), and Raman scattering have been used to study property and defects of ZnO single crystal grown by a chemical vapor transport method (CVT). As-grown ZnO is N type with free electron density Of 10(16)-10(17)cm(-3). It has a slight increase after 900 degrees C annealing in oxygen ambient. The DLTS measurement revealed four deep level defects with energy at 0.30eV, 0.50eV, 0.68eV and 0.90eV in the as-grown ZnO sample, respectively. After the high temperature annealing, only the 0.5eV defect survive and has a concentration increase. PL results of the as-grown and annealed ZnO indicate that the well-known green emission disappear after the annealing. The result suggests a correlation between the 0.68eV defect and the green PL peak. Results of P-doped ZnO were also compared with the undoped ZnO sample. The nature of the defects and their influence on the material property have been discussed.

Sol-gel synthesis and photoluminescent properties of LaPO4 : A (A = Eu3+, Ce3+, Tb3+) nanocrystalline thin films

Rare-earth ion (Eu3+, Tb3+, Ce3+)- doped LaPO4 nanocrystalline thin films and their patterning were fabricated by a Pechini sol-gel process combined with soft lithography on silicon and silica glass substrates. X-Ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM), scanning electron microcopy (SEM), optical microscopy, absorption and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicate that the films begin to crystallize at 700 degreesC and the crystallinity increases with increasing annealing temperature. The morphology of the thin film depends on the annealing temperature and the number of coating layers. The 1000 degreesC annealed single layer film is transparent to the naked eye, uniform and crack-free with a thickness of about 200 nm and an average grain size of 100 nm. Patterned thin films with different strip widths ( 5 - 50 mm) were obtained by micromolding in capillaries ( soft lithography). The doped rare earth ions show their characteristic emission in the nanocrystalline LaPO4 films, i.e., Eu3+ D-5(0)-F-7(J) (J = 1, 2, 3, 4), Tb3+ D-5(3,4) - F-7(J) ( J = 6, 5, 4, 3, 2) and Ce3+ 5d-4f transition emissions, respectively. Both the lifetimes and the PL intensities of Eu3+ and Tb3+ increase with increasing annealing temperature, and the optimum concentrations for them were determined to be 5 mol% and 16 mol% of La3+ in LaPO4 thin films, respectively. An energy transfer phenomenon from Ce3+ to Tb3+ has been observed in LaPO4 nanocrystalline thin films, and the energy transfer efficiency depends on the doping concentration of Tb3+ if the concentration of Ce3+ is fixed.

Patterning and luminescent properties of nanocrystallineY(2)O(3): Eu3+ phosphor films by sol-gel soft lithography

Nanocrystalline Y2O3:Eu3+ phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography. X-ray diffraction (XRD), thermogravimetric and differential thermal analysis (TG-DTA), atomic force microscopy (AFM), optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 degreesC and the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained, which mainly consisted of grains with an average size of 70 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 mum). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped Eu3+ showed its characteristic emission in crystalline Y2O3 phosphor films due to an efficient energy transfer from Y2O3 host to them. Both the lifetimes and PL intensity of the Eu3+ increased with increasing the annealing temperature from 500 to 900 degreesC, and the optimum concentrations for Eu3+ were determined to be 5 mol%.

Preparation, patterning and luminescent properties of nanocrystalline Gd2O3 : A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films via Pechini sol-gel soft lithography

Nanocrystalline Gd2O3:A (A = Eu3+, Dy3+, Sm3+, Er3+) phosphor films and their patterning were fabricated by a Pechini sol-gel process combined with a soft lithography. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and optical microscopy, UV/vis transmission and photoluminescence (PL) spectra as well as lifetimes were used to characterize the resulting films. The results of XRD indicated that the films began to crystallize at 500 degreesC and that the crystallinity increased with the elevation of annealing temperatures. Uniform and crack free non-patterned phosphor films were obtained by optimizing the composition of the coating sol, which mainly consisted of grains with an average size of 70 nm and a thickness of 550 nm. Using micro-molding in capillaries technique, we obtained homogeneous and defects-free patterned gel and crystalline phosphor films with different stripe widths (5, 10, 20 and 50 mum). Significant shrinkage (50%) was observed in the patterned films during the heat treatment process. The doped rare earth ions (A) showed their characteristic emission in crystalline Gd2O3 phosphor films due to an efficient energy transfer from Gd2O3 host to them. Both the lifetimes and PL intensity of the rare earth ions increased with increasing the annealing temperature from 500 to 900 degreesC, and the optimum concentrations for Eu3+, Dy3+, sm(3+), Er3+ were determined to be 5, 0.25, 1 and 1.5 mol% of Gd3+ in Gd2O3 films, respectively.

Morphology and structure of poly(aryl ether ketone ketone) containing isophthaloyl moieties crystallized from dilute solution

Spherulites and lamellar single crystals of poly(aryl ether ketone ketone) containing isophthaloyl moieties (PEKK(I)) were obtained from dilute alpha-chloronaphthalene solution. The morphology and structure of the spherulites and single crystals were studied by electron microscopy and electron diffraction. The spherulites were found to consist of elongated lamellar branches that grow with the b crystallographic axis in the radial direction. Single crystals possess a similar habit, with b parallel to the long axis, a transverse, and c perpendicular to the lamellae plane. High-resolution images of the PEKK(I) crystals which show the perfection of and defects in the crystals, were obtained, and many defects or dislocations a,ere observed. (C) 1997 Elsevier Science Ltd.

STUDY ON THE NON-STIOCHIOMETRIC SNO2-X NANOCRYSTALLINE MATERIAL BY XRD, XPS AND ESR

Nonstiochiometric SnO2-x nanocrystalline material were successfully prepared through Sol-Gel process using anhydrous stannic chloride and iso-propyl alcohol. TEM observation shows that the mean diameter of the powder sintered at 700 degrees C for 2 hours is about 20 nm. By the investigation of XRD and ESR, we can conclude that the sample sintered at 300 degrees C for 2 hours was amorphous and it grew into nanocrystalline with the oxygen vacancies and defects when sintered at 700 degrees C for 2 hours. Using these conclusion, the ESR signals and the difference between the two SnO2-x samples are explained.