HYDROGENATED AMORPHOUS SILICON THIN-FILM DEPOSITION BY DIRECT PHOTO-ENHANCED DECOMPOSITION OF SILANE USING AN INTERNAL HYDROGEN DISCHARGE LAMP.

Hydrogenated amorphous silicon (a-Si:H) thin films have been deposited from silane using a novel photo-enhanced decomposition technique. The system comprises a hydrogen discharge lamp contained within the reaction vessel; this unified approach allows high energy photon excitation of the silane molecules without absorption by window materials or the need for mercury sensitisation. The film growth rates (exceeding 4 Angstrom/s) and material properties obtained are comparable to those of films produced by plasma-enhanced CVD techniques. The reduction of energetic charged particles in the film growth region should enable the fabrication of cleaner semiconductor/insulator interfaces in thin-film transistors.

Reynolds number influence on turbulent blocking effects of a rigid plane boundary (2nd report, direct numerical simulation using townsend's eddy forcing)

The Reynolds number influence on turbulent blocking effects by a rigid plane boundary is studied using direct numerical simulation (DNS). A new forcing method using 'simple model eddies' (Townsend 1976) for DNS of stationary homogeneous isotropic turbulence is proposed. A force field is obtained in real space by sprinkling many space-filling 'simple model eddies' whose centers are randomly but uniformly distributed in space and whose axes of rotation are random. The method is applied to a shear-free turbulent boundary layer over a rigid plane boundary and the blocking effects are investigated. The results show that stationary homogeneous isotropic turbulence is generated in real space using the present method. By using different model eddies with different sizes and rotation speeds, we could change the turbulence properties such as the integral and micro scales, the turbulent Reynolds number and the isotropy of turbulence. Turbulence intensities near the wall showed good agreements with the previous measurement and the linear analysis based on a rapid distortion theory (RDT). The splat effect (i.e., turbulence intensities of the components parallel to the boundary are amplified) occurs near the boundary and the viscous effect prohibits the splat effect at the quasi steady state at low Reynolds number.

Reynolds number influence on turbulent blocking effects of a rigid plane boundary (3rd report, direct numerical simulation on wall blocking effects for anisotropic turbulence)

The Reynolds number influence on turbulent blocking effects by a rigid plane boundary is studied using direct numerical simulation (DNS). A new forcing method proposed in the second report using Townsend's "simple model eddies" for DNS was extended to generate axisymmetric anisotropic turbulence. A force field is obtained in real space by sprinkling many space-filling "simple model eddies" whose centers are randomly but uniformly distributed in space. The axes of rotation are controlled in this study to generate axisymmetric anisotropic turbulence. The method is applied to a shear-free turbulent boundary layer over a rigid plane boundary and the blocking effects for anisotropic turbulence are investigated. The results show that stationary axisymmetric anisotropic turbulence is generated using the present method. Turbulence intensities near the wall showed good agreements with the rapid distortion theory (RDT) for small t (t ≪ TL), where TL. is the eddy turnover time. The splat effect (i. e. turbulence intensities of the components parallel to the surface are amplified) occurs near the boundary and the viscous effect attenuates the splat effect at the quasi steady state at low Reynolds number as for Isotropic turbulence. Prandtl's secondary flow of the second kind does not occur for low Reynolds number flows, which qualitatively agrees with previous observetion in a mixing-box.

Three-dimensional direct numerical simulations of autoignition in turbulent non-premixed flows with simple and complex chemistry

3D Direct Numerical Simulations (DNS) of autoignition in turbulent non-premixed flows between fuel and hotter air have been carried out using both 1-step and complex chemistry consisting of a 22 species n-heptane mechanism to investigate spontaneous ignition timing and location. The simple chemistry results showed that the previous findings from 2D DNS that ignition occurred at the most reactive mixture fraction (ξMR) and at small values of the conditional scalar dissipation rate (N|ξMR) are valid also for 3D turbulent mixing fields. Performing the same simulation many times with different realizations of the initial velocity field resulted in a very narrow statistical distribution of ignition delay time, consistent with a previous conjecture that the first appearance of ignition is correlated with the low-N content of the conditional probability density function of N. The simulations with complex chemistry for conditions outside the Negative Temperature Coefficient (NTC) regime show behaviour similar to the single-step chemistry simulations. However, in the NTC regime, the most reactive mixture fraction is very rich and ignition seems to occur at high values of scalar dissipation. Copyright © 2006 by ASME.

Vertically aligned carbon nanotubes growth using self-assembled Ni nanoparticles produced by ion implantation

An alternative method for seeding catalyst nanoparticles for carbon nanotubes and nanowires growth is presented. Ni nanoparticles are formed inside a 450 nm SiO2 film on (100) Si wafers through the implantation of Ni ions at fluences of 7.5×1015 and 1.7×1016 ions.cm-2 and post-annealing treatments at 700, 900 and 1100°C. After exposed to the surface by HF dip etching, the Ni nanoparticles are used as catalyst for the growth of vertically aligned carbon nanotubes by direct current plasma enhanced chemical vapor deposition. © 2007 Materials Research Society.

How to achieve high mobility thin film transistors by direct deposition of silicon using 13.56 MHz RF PECVD?

CMOS nanocrystalline silicon thin film transistors with high field effect mobility are reported. The transistors were directly deposited by radio-frequency plasma enhanced chemical vapor deposition at 150°C The transistors show maximum field effect mobility of 450 cm2/V-s for electrons and 100 cm2/V-s for holes at room temperature. We attribute the high mobilities to a reduction of the oxygen content, which acts as an accidental donor. Indeed, secondary ion mass spectrometry measurements show that the impurity concentration in the nanocrystalline Si layer is comparable to, or lower than, the defect density in the material, which is already low thanks to hydrogen passivation.

Wave energy emulator and AC/DC rectifiers for direct drive wave energy converters

This paper describes a solid state electrical emulator devised for laboratory testing of power conditioning electronics for direct drive linear wave energy converters (DDLWEC). Two rectification strategies are considered; a uni-directional boost topology, and an H-bridge which may be controlled in either uni- or bidirectional modes.

Design and commissioning of a 30kw direct drive wave generator

The Trident Energy TE5 is a prototype wave energy converter operating on the principle of having direct-drive linear generators mounted above the water surface, coupled to floats moving under the rig deck. This paper describes aspects of the TE5 design, including its generators, power electronic systems and the conception of its marine structure.