997 resultados para 219
Resumo:
运用微卫星标记对江苏境内草鱼(Ctenopharyngodon idella)一个野生群体(邗江群体)和两个养殖群体(淡水中心群体和无锡前洲群体)遗传多样性进行了分析.在10个座位中,每个座位检测到的等位基因数2~8个.有效等位基因数、多态信息含量、期望杂合度、平均表观杂合度均以邗江草鱼野生群体最高,分别为3.9、0.506 8、0.693 9、0.7;无锡前洲草鱼养殖群体最低,分别为2.2、0.179 6、0.523 5、0.528 6;淡水中心草鱼养殖群体各参数均介于两者之间,分别为3.5、0.290 2、0.541 8、0.542 9.以上结果表明:草鱼野生群体遗传多样性更为丰富,而草鱼养殖群体存在杂合度降低,遗传多样性下降的现象.邗江草鱼野生群体与淡水中心草鱼养殖群体和无锡前洲草鱼养殖群体间遗传分化系数分别为0.219和0.246,而两个草鱼养殖群体间遗传分化系数为0.034.这表明草鱼野生群体与草鱼养殖群体间分化严重,而草鱼养殖群体间分化微弱.各座位分化程度的χ2检验结果表明,10个座位中有GM18、MFW1-1、MFW1-2三个座位群体间分化达到极显著水平,GM03-2、MFW5两个座位群体间分化差异显著,其他座位分化不显著.针对每个座位对各群体进行Hardy-Weinberg平衡检验发现:由于草鱼养殖群体在GM03-1、GM03-2、GM18三个位点杂合子缺失,草鱼野生群体在位点GM19杂合子过剩而严重偏离平衡.实验表明:近交容易引起草鱼遗传多样性下降,纯合速度加快.
Resumo:
描述了半翅目蝽科曼蝽属一新种--华美曼蝽Menida speciosa Zheng & Xiong, sp. nov.,模式产地为云南思茅菜阳河保护区倮倮新寨山;以及根据模式标本重新描述了Menida salvazana Distant 1921。
Resumo:
We propose an uncooled DWDM system where errors from uncontrolled laser mode-hopping are avoided by using a control protocol based on monitoring SMSR. We describe a proof-of-principle demonstration of a novel uncooled 50GHz DWDM system. © 2011 IEEE.
Resumo:
We built 64 sets of 3D models of DNA triplex base triplets (TBT) and minimized their energies. The TBTs were divided into 32 pairs of conjugated ones on the basis of their sequence characteristic, and the energies of each pair of them were compared and analyzed, the results showed: (i) The duplex DNA of which any strand contains at least a couple of A or T, has a preference for selecting the oligodeoxyribonucleic acid (ODN) strand containing abundant T to form TBT. (ii) The duplex DNA of which any strand contains at least a couple of G or C has a preference for selecting ODN containing abundant G to form symmetric antiparallel TBT, but selecting ODN containing abundant C to form asymmetric parallel TBT. (iii) The duplex DNA of which any strand contains only one of A, T, G or C has a preference for selecting ODN containing abundant pyrimidines (T or C) to form antiparallel TBT. Additionally, two examples of TBTs applications, in designing ODN to form triplex with duplex were presented. The energy calculation result revealed that 15-TCG is the best ligand of the HIV PPT duplex. The comparative analysis of energies of the conjugated TBTs provides directive significance for designing ODN strand that is easy to form triplex in theory. (C) 2002 Elsevier Science B.V. All rights reserved.
Resumo:
A chymotrypsin inhibitor, designated NA-CI, was isolated from the venom of the Chinese cobra Naja atra by three-step chromatography. It inhibited bovine (x-chymotrypsin with a K-i of 25 nM. The molecular mass of NA-CI was determined to be 6403.8 Da by matrix-assisted laser-desorption ionization time-of-flight (MALDI-TOF) analysis. The complete amino acid sequence was determined after digestion of S-carboxymethylated inhibitor with Staphylococcus aureus V8 protease and porcine trypsin. NA-CI was a single polypeptide chain composed of 57 amino acid residues. The main contact site with the protease (PI) has a Phe, showing the specificity of the inhibitor. NA-CI shared great similarity with the chymotrypsin inhibitor from Naja naja venom (identities = 89.5%) and other snake venom protease inhibitors. (C) 2003 Elsevier Inc. All rights reserved.
Resumo:
We demonstrate the growth of multi wall and single wall carbon nanotubes (CNT) onto substrates containing commercial 1-m CMOS integrated circuits. The low substrate temperature growth (450°C) was achieved by using hot filament (1000 °C) to preheat the source gases (C 2H 2 and NH 3) and in situ mass spe-ctroscopy was used to identify the gas species present. Field effect transistors based on Single Walled Carbon Nanotube (SWNT) grown under such conditions were fabricated and examined. CNT growth was performed directly on the passivation layer of the CMOS integrated circuits. Individual n- and p-type CMOS transistors were compared before and after CNT growth. The transistors survive and operate after the CNT growth process, although small degradations are observed in the output current (for p-transistors) and leakage current (for both p- and n-type transistors). © 2010 IEEE.