Analysis of OSNR Requirements for Higher Modulation Schemes for Various Local Oscillator Powers

To meet the growing demands of data traffic in long haul communication, it is necessary to efficiently use the low-loss region(C-band) of the optical spectrum, by increasing the no. of optical channels and increasing the bit rate on each channel But narrow pulses occupy higher spectral bandwidth. To circumvent this problem, higher order modulation schemes such as QPSK and QAM can be used to modulate the bits, which increases the spectral efficiency without demanding any extra spectral bandwidth. On the receiver side, to meet a satisfy, a given BER, the received optical signal requires to have minimum OSNR. In our study in this paper, we analyses for different modulation schemes, the OSNR required with and without preamplifier. The theoretical limit of OSNR requirement for a modulation scheme is compared for a given link length by varying the local oscillator (LO) power. Our analysis shows that as we increase the local oscillator (LO) power, the OSNR requirement decreases for a given BER. Also a combination of preamplifier and local oscillator (LO) gives the OSNR closest to theoretical limit.

Robust local and nonlocal transport in the topological Kondo insulator SmB6 in the presence of a high magnetic field

SmB6 has been predicted to be a Kondo topological insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high-quality single crystals of SmB6. We observe a large nonlocal surface signal at temperatures lower than the bulk Kondo gap scale. Measurements and finite-element simulations allow us to distinguish unambiguously between the contributions from different transport channels. In contrast to general expectations, the electrical transport properties of the surface channels were found to be insensitive to high magnetic fields. We propose possible scenarios that might explain this unexpected finding. Local and nonlocal magnetoresistance measurements allowed us to identify possible signatures of helical spin states and strong interband scattering at the surface.

Meshless Local Petrov-Galerkin Method for Rotating Euler-Bernoulli Beam

Free vibration problem of a rotating Euler-Bernoulli beam is solved with a truly meshless local Petrov-Galerkin method. Radial basis function and summation of two radial basis functions are used for interpolation. Radial basis function satisfies the Kronecker delta property and makes it simpler to apply the essential boundary conditions. Interpolation with summation of two radial basis functions increases the node carrying capacity within the sub-domain of the trial function and higher natural frequencies can be computed by selecting the complete domain as a sub-domain of the trial function. The mass and stiffness matrices are derived and numerical results for frequencies are obtained for a fixed-free beam and hinged-free beam simulating hingeless and articulated helicopter blades. Stiffness and mass distribution suitable for wind turbine blades are also considered. Results show an accurate match with existing literature.

Similarity of Matrices Over Local Rings of Length Two

Let R be a (commutative) local principal ideal ring of length two, for example, the ring R = Z/p(2)Z with p prime. In this paper, we develop a theory of normal forms for similarity classes in the matrix rings M-n (R) by interpreting them in terms of extensions of R t]-modules. Using this theory, we describe the similarity classes in M-n (R) for n <= 4, along with their centralizers. Among these, we characterize those classes which are similar to their transposes. Non-self-transpose classes are shown to exist for all n > 3. When R has finite residue field of order q, we enumerate the similarity classes and the cardinalities of their centralizers as polynomials in q. Surprisingly, the polynomials representing the number of similarity classes in M-n (R) turn out to have non-negative integer coefficients.

Local structure of boundary layer transition in experiments with a single streamwise vortex

Transition induced by an isolated streamwise vortex embedded in a flat plate boundary layer was studied experimentally. The vortex was created by a gentle hill with a Gaussian profile that spanned on half of the width of a flat plate mounted in a low turbulence wind tunnel. PIV and hot-wire anemometry data were taken. Transition occurs as a non-inclined shear layer breaks up into a sequence of vortices, close to the boundary layer edge. The passing frequency of these vortices scales with square of the freestream velocity, similar to that in single-roughness induced transition. Quadrant analysis of streamwise and wall-normal velocity fluctuations show large ejection events in the outer layer. (C) 2015 Elsevier Inc. All rights reserved.

Joint Bilateral Filtering based Non-local Means Image Denoising

This paper proposes a denoising algorithm which performs non-local means bilateral filtering. As existing literature suggests, non-local means (NLM) is one of the widely used denoising techniques, but has a critical drawback of smoothing of edges. In order to improve this, we perform fast and efficient NLM using Approximate Nearest Neighbour Fields and improve the edge content in denoising by formulating a joint-bilateral filter. Using the proposed joint bilateral, we are able to denoise smooth regions using the NLM approach and efficient edge reconstruction is obtained from the bilateral filter. Furthermore, to avoid tedious parameter selection, we carry out a noise estimation before performing joint bilateral filtering. The proposed approach is observed to perform well on high noise images.

Electric field and temperature dependence of the local structural disorder in the lead-free ferroelectric Na0.5Bi0.5TiO3: An EXAFS study

The complex nature of the structural disorder in the lead-free ferroelectric Na1/2Bi1/2TiO3 has a profound impact on the perceived global structure and polar properties. In this paper, we have investigated the effect of electric field and temperature on the local structure around theBi and Ti atoms using extended x-ray absorption fine structure. Detailed analysis revealed that poling brings about a noticeable change in the bond distances associated with the Bi-coordination sphere, whereas the Ti coordination remains unaffected. We also observed discontinuity in the Bi-O bond lengths across the depolarization temperature of the poled specimen. These results establish that the disappearance of the monoclinic-like (Cc) global distortion, along with the drastic suppression of the short-ranged in-phase octahedral tilt after poling B. N. Rao et al., Phys. Rev. B 88, 224103 (2013)] is a result of the readjustment of theA-O bonds by the electric field, so as to be in conformity with the rhombohedral R3c structure.

Edge states, spin transport, and impurity-induced local density of states in spin-orbit coupled graphene

We study graphene, which has both spin-orbit coupling (SOC), taken to be of the Kane-Mele form, and a Zeeman field induced due to proximity to a ferromagnetic material. We show that a zigzag interface of graphene having SOC with its pristine counterpart hosts robust chiral edge modes in spite of the gapless nature of the pristine graphene; such modes do not occur for armchair interfaces. Next we study the change in the local density of states (LDOS) due to the presence of an impurity in graphene with SOC and Zeeman field, and demonstrate that the Fourier transform of the LDOS close to the Dirac points can act as a measure of the strength of the spin-orbit coupling; in addition, for a specific distribution of impurity atoms, the LDOS is controlled by a destructive interference effect of graphene electrons which is a direct consequence of their Dirac nature. Finally, we study transport across junctions, which separates spin-orbit coupled graphene with Kane-Mele and Rashba terms from pristine graphene both in the presence and absence of a Zeeman field. We demonstrate that such junctions are generally spin active, namely, they can rotate the spin so that an incident electron that is spin polarized along some direction has a finite probability of being transmitted with the opposite spin. This leads to a finite, electrically controllable, spin current in such graphene junctions. We discuss possible experiments that can probe our theoretical predictions.

Maintaining local displacive disorders in Na0.5Bi0.5TiO3 piezoceramics by K0.5Bi0.5TiO3 substitution

A comprehensive global and local structural characterization using X-ray and neutron diffraction, and EXAFS have been performed to investigate the effect of electrical poling on the structure of (1-x)Na0.5Bi0.5TiO3-(x)K0.5Bi0.5TiO3 compositions. While the annealed samples showed definite indication of presence of local displacive disorders in all the compositions studied (0 local displacive disorder decreased with increasing K0.5Bi0.5TiO3 content in the samples. (C) 2016 Elsevier Ltd. All rights reserved.

Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity

A two-dimensional axisymmetric numerical model is presented to study the influence of local magnetic fields on P-doped Si floating zone melting crystal growth in microgravity. The model is developed based on the finite difference method in a boundary-fitted curvilinear coordinate system. Extensive numerical simulations are carried out, and parameters studied include the curved growth interface shape and the magnetic field configurations. Computed results show that the local magnetic field is more effective in reducing the impurity concentration nonuniformity at the growth interface in comparison with the longitudinal magnetic field. Moreover, the curved growth interface causes more serious impurity concentration nonuniformity at the growth interface than the case with a planar growth interface.

Local hydrogen reactions of H*2 in a-Si:H

Hydrogen rearrangements at the H*2 complex are used as a model of low energy, local transitions in the two-hydrogen density of states of hydrogenated amorphous silicon (a-Si:H). These are used to account for the low activation energy motion of H observed by nuclear magnetic resonance, the low energy defect annealing of defects formed by bias stress in thin film transistors, and the elimination of hydrogen from the growth zone during the low temperature plasma deposition of a-Si:H. © 1998 Elsevier Science B.V. All rights reserved.