RESONANT TUNNELING, EIGENVALUE AND ENERGY-BAND CALCULATION FOR POTENTIAL AND PERIODIC POTENTIAL STRUCTURES

Recursion formulae for the reflection and the transmission probability amplitudes and the eigenvalue equation for multistep potential structures are derived. Using the recursion relations, a dispersion equation for periodic potential structures is presented. Some numerical results for the transmission probability of a double barrier structure with scattering centers, the lifetime of the quasi-bound state in a single quantum well with an applied field, and the miniband of a periodic potential structure are presented.

PRESSURE BEHAVIOR OF INXGA1-XAS/GAAS STRAINED QUANTUM-WELLS WITH DIFFERENT WIDTHS

The photoluminescence of InxGa1-xAs/GaAs strained quantum wells with widths of 30 angstrom to 160 angstrom have been studied at 77 K under hydrostatic pressure up to 60 kbar. It is found that the pressure coefficients of exciton peaks from 1st conduction subband to heavy hole subband increase from 9.74 meV/kbar for a 160 angstrom well to 10.12 meV/kbar for a 30 angstrom well. The calculation based on the Kronig-Penney model indicated that the extension of the electronic wave function to the barrier layer in the narrow wells is one of the reasons for the increase of the pressure coefficients with the decrease of well width. Two peaks related to indirect transitions were observed at pressures higher than 50 kbar.

Resonant magnetopolaron effects due to interface phonons in GaAs/AlGaAs multiple quantum well structures

Polaron cyclotron resonance (CR) has been studied in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well structures in magnetic field up to 30 T. Large avoided-level-crossing splittings of the CR near the GaAs reststrahlen region, and smaller splittings in the region of the AlAs-like optical phonons of th AlGaAs barriers, are observed. Based on a comparison with a detailed theoretical calculation, the high frequency splitting, the magnitude of which increases with decreasing well width, is assigned to resonant polaron interactions with AlAs-like interface phonons.

Electronic structures of T-shaped quantum wires

In this paper, we propose the periodic boundary condition which can be applied to a variety of semiconductor nanostructures to overcome che difficulty of solving Schrodinger equation under the natural boundary condition. When the barrier width is large enough. the average of the maximum and minimum of energy band under the periodic boundary condition is very close to the energy level obtained under the natural boundary condition. As an example, we take the GaAs/Ga1-xAlxAs system, If the width of the Ga1-xAlxAs barrier is 200 Angstrom, the average of the maximum and minimum of energy band of the GaAs/Ga1-xAlxAs superlattices is very close to the energy level of the GaAs/Ga1-xAlxAs quantum wells (QWs). We give the electronic structure effective mass calculation of T-shaped quantum wires (T-QWRs) under the periodic boundary condition, The lateral confinement energies E1D-2D of electrons and holes, the energy difference between T-QWRs and QWs, are precisely determined.

Intraband optical absorption in semiconductor coupled quantum dots

In the framework of effective mass envelope function theory, absorption coefficients are calculated for intraband (intersubband in the conduction band) optical transition in InAs/GaAs coupled quantum dots. In our calculation the microscpic distributon of the strain is taken into account. The absorption in coupled quantum dots is quite different from that of superlattices. In superlattices, the absorption does not exist when the electric vector of light is parallel to the superlattice plane (perpendicular incident). This introduces somewhat of a difficulty in fabricating the infrared detector. In quantum dots, the absorption exists when light incident along any direction, which may be good for fabricating infrared detectors.

Influence of the lateral confining potential on the ballistic electron transport in a quantum wire

A theoretical investigation of ballistic electron transport in a quantum wire with soft wall confinement is presented. A general method of the electron transmission calculation is proposed for structures with complicated geometries. The effects of the lateral guiding potential on ballistic transport are investigated using three soft wall confinement models and the results are compared with those obtained from the hard wall confinement approximation. It is shown that the calculated transmission coefficients are notably dependent on the lateral confining potential especially when the incident electron energy is larger than the energy of the second transverse mode. It is found that the transmission profile obtained from soft wall confinement models exhibits simpler resonance structures than that obtained from the hard wall confinement approximation. Our results suggest that only in the single-channel regime the hard wall confinement approximation can give reasonable results.

GSMBE growth and PL investigation of lattice-matched InGaAs/InP quantum wells

Using a home-made gas-source molecular beam epitaxy system, high quality InGaAs quantum wells with different well widths lattice-matched to a (001) InP substrate have been obtained. Sharp and intense peaks for each well can be well resolved in the PL spectra for the sample. For well widths larger than similar to 60 Angstrom, the exciton energies are in good agreement with those of calculation. For wells narrower than 40 Angstrom, our line widths are below the theoretical values of line width broadening due to one monolayer interface fluctuation, showing that the interface fluctuation of our sample is within one monolayer.

DETERMINATION OF THE X-CONDUCTION-SUBBAND ENERGIES IN TYPE-II GAAS/ALAS/GAAS QUANTUM-WELL BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

Using deep level transient spectroscopy (DLTS) the X conduction-subband energy levels in an AlAs well sandwiched by double GaAs layers were determined. Calculation gives eight subbands in the well with well width of 50 Angstrom. Among them, five levels and the other three remainders are determined by using the large longitudinal electron effective mass m(1)(1.1m(0)) and transverse electron effective mass m(t)(0.19m(0)) at X valley, respectively. Two subbands with the height energies were hardly detectable and the other six ones with lower energies are active in the present DLTS study. Because these six subbands are close to each other, we divided them into three groups. Experimentally, we observed three signals induced from the three groups. A good agreement between the calculation and experiment was obtained. (C) 1995 American Institute of Physics.

Binding Energy of Biexcitons in GaAs Quantum-Well Wires

The binding energy of a biexciton in GaAs quantum-well wires is calculated variationally by use of a two-parameter trial wavefunction and a one-dimensional equivalent potential model. There is no artificial parameter added in our calculation. Our results agree fairly well with the previous results. It is found that the binding energies are closely correlative to the size of wire. The binding energy of biexcitons is smaller than that of neutral bound excitons in GaAs quantum-well wires when the dopant is located at the centre of the wires.

Optical transitions in GaNAs/GaAs single quantum well

We have investigated GaNAs/GaAs single quantum wells (SQWs) grown by molecular beam epitaxy (MBE) using photoluminescence (PL), time-resolved PL (TRPL) and photovoltaic (PV) techniques. The low temperature PL is dominated by spatially direct transitions involving electrons confined in GaNAs well and holes localized in the same GaNAs layer. This assignment was supported by PL decay time measurements and absorption line-shape analysis derived from the PV measurements. By fitting the experimental data with a simple calculation, the band offset of the GaN0.015As0.985/GaAS heterostructure was estimated, and a type II band lineup in GaN0.015As0.985/GaAs QWs was suggested. Moreover, DeltaE(C), the discontinuity of conductor band, is found to be a nonlinear function of the nitrogen (N) composition (x), and the average variation of DeltaE(C) is about 0.110eV per %N, The measured band bowing coefficient shows a strong function of x, giving an experimental support to the theoretic calculation of Wei et al [Ref.2].

Type I-type II transition of self-assembled In0.55Al0.45As/Al0.5Ga0.5As quantum dots

The photoluminescence (PL) of In0.55Al0.45As/Al0.5Ga0.5As self-assembled quantum dots has been measured at 15 and 80 K under hydrostatic pressure. The lateral size of the dots ranges from 7 to 62 nm. The emissions from the dots with 26, 52 and 62 nm size have a blue shift under pressure, indicating that these quantum dots have the normal type-I structure with lowest conduction band at the Gamma -valley. However, the PL peak of dots with 7 nm diameter moves to lower energy with increasing pressure. It is a typical character for the X-related transition. Then these small dots have a type-II structure with the X-valley as the lowest conduction level. An envelope-function calculation confirms that the Gamma -like exciton transition energy will rise above the X-like transition energy in the In0.55Al0.45As/Al0.5Ga0.5As structure if the dot size is small enough.

Mechanical and thermal properties of glass bead-filled nylon-6

The mechanical and thermal properties of glass bead-filled nylon-6 were studied by dynamic mechanical analysis (DMA), tensile testing, Izod impact, thermogravimetric analysis (TGA), and differential scanning calorimetry (DSC) tests. DMA results showed that the incorporation of glass beads could lead to a substantial increase of the glass-transition temperature (T-g) of the blend, indicating that there existed strong interaction between glass beads and the nylon-6 matrix. Results of further calculation revealed that the average interaction between glass beads and the nylon-6 matrix deceased with increasing glass bead content as a result of the coalescence of glass beads. This conclusion was supported by SEM observations. Impact testing revealed that the notch Izod impact strength of nylon-6/glass bead blends substantially decreased with increasing glass bead content. Moreover, static tensile measurements implied that the Young's modulus of the nylon-6/glass bead blends increased considerably, whereas the tensile strength clearly decreased with increasing glass bead content.

Calculation of chemical bond parameters in La1-xCaxCrO3 (0.0 <= x <= 0.3)

The chemical bond parameters, that is, bond covalency, bond susceptibility, and macroscopic linear susceptibility of La1-xCaxCrO3 (x = 0.0, 0.1, 0.2, 0.3) has been calculated using a semiempirical method. This method is the generalization of the dielectric description theory proposed by Phillips, Van Vechten, Levine, and Tanaka (PVLT). In the calculation of bond valence, two schemes were adopted. One is the bond valence sums (BVS) scheme, and the other is the equal-valence scheme. Both schemes suggest that for the title compounds bond covalency and bond susceptibility are mainly influenced by bond valence and are insensitive to the Ca doping level or structural change. Larger bond valences usually result in higher bond covalency and bond susceptibility. The macroscopic linear susceptibility increases (only slightly for BVS scheme) with the increasing Ca doping level. (C) 1999 John Wiley & Sons, Inc.

Quantum behavior in mesoscopic systems

In this thesis I present the work done during my PhD. The Thesis is divided into two parts; in the first one I present the study of mesoscopic quantum systems whereas in the second one I address the problem of the definition of Markov regime for quantum system dynamics. The first work presented is the study of vortex patterns in (quasi) two dimensional rotating Bose Einstein condensates (BECs). I consider the case of an anisotropy trapping potential and I shall show that the ground state of the system hosts vortex patterns that are unstable. In a second work I designed an experimental scheme to transfer entanglement from two entangled photons to two BECs. This work is meant to propose a feasible experimental set up to bring entanglement from microscopic to macroscopic systems for both the study of fundamental questions (quantum to classical transition) and technological applications. In the last work of the first part another experimental scheme is presented in order to detect coherences of a mechanical oscillator which is assumed to have been previously cooled down to the quantum regime. In this regime in fact the system can rapidly undergo decoherence so that new techniques have to be employed in order to detect and manipulate their states. In the scheme I propose a micro-mechanical oscillator is coupled to a BEC and the detection is performed by monitoring the BEC with a negligible back-action on the cantilever. In the second part of the thesis I give a definition of Markov regime for open quantum dynamics. The importance of such definition comes from both the mathematical description of the system dynamics and from the understanding of the role played by the environment in the evolution of an open system. In the Markov regime the mathematical description can be simplified and the role of the environment is a passive one.

Quantum manifestations of scattering orbits in the scaled spectrum of a non-hydrogenic atom in crossed fields

Evidence for scattering closed orbits for the Rydberg electron of the singly excited helium atom in crossed electric and magnetic fields at constant scaled energy and constant scaled electric field strength has been found through a quantum calculation of the photo-excitation spectrum. A particular 3D scattering orbit in a mixed regular and chaotic region has been investigated and the hydrogenic 3D closed orbits composing it identified. To the best of our knowledge, this letter reports the first quantum calculation of the scaled spectrum of a non- hydrogenic atom in crossed fields.