Two-dimensional liquid crystal laser array

A two-dimensional liquid crystal (LC) laser array has been demonstrated by photopumping a single LC sample using a lenslet array consisting of plano-convex microlenses. A 5 × 5 array of LC lasers (displaying evidence of mutual coherence) spaced by 1 mm inactive regions has been generated, which could be combined to yield a single monomode output and allows an almost 50-fold increase in energy density in comparison to a single-focus LC cavity. Furthermore, we have demonstrated how the individual and recombined emission spectra vary with different sample topologies and how polydomain samples can be used to generate a multiwavelength laser emission. © 2008 Optical Society of America.

Building up a frequency stabilisation based on a wavemeter for a diode laser and characterisation for a digital mirror device for artificial potentials

It has built and characterised a laser and It has learned what each of the components does. It has been able to run the laser in single-mode and stabilised it around a desired setpoint thanks to a PID controller that It has programmed. It has established a communication between the PID controller programmed in LabVIEW and Arduino Due, the DAC that It has chosen after comparing it with another candidate. It has learned some basics of how the LightCrafter 4500 DMD works. The projected light is the composition of the lights of three LED’s, each of which has a certain on-time. The mirrors chose to be in on- or off-stages depending to the amount of intensity that we want for each colour.

Directly modulated wavelength-multiplexed integrated microring laser array

The first demonstration of a directly modulated microring laser array is presented for on-off keyed, wavelength- division- multiplexed fiber-optic data transmission. GaInAsP-InP microring resonators oscillating at separate wavelengths in the 1.5-μm band are vertically coupled to a common passive waveguide bus, which is fabricated on the reverse side of the InP membrane. Two microrings defined with radii for a wavelength channel separation of 6 nm have been assessed for both individual and simultaneous operation. Negligible power penalty (<0.2 dB) is observed for wavelength-division-multiplexed operation with and without transmission over a 25-km fiber span in a manner which indicates low crosstalk between the integrated sources. A device area of less than 0.12 mm2 per microring on a common passive bus allows a highly scalable solution for short-reach wavelength-multiplexed links. © 2008 IEEE.

First demonstration of two photon absorption in a semiconductor waveguide pumped by a diode laser

For the first time, lasers have been used to induce a fast all-optical nonresonant nonlinearity at wavelengths well beyond the band edge in a GaAs/GaAlAs multiquantum well waveguide. Using a Q-switched diode laser, which gave optical pulses of 3.5 ps duration and 7 W peak power, an intensity-dependent transmission was recorded that was consistent with the presence of two photon absorption in the waveguide. The measured two photon absorption coefficient was 11 ± 2cm/GW.

Ultrashort pulse generation in diode laser devices

The generation of ultrashort optical pulses by semiconductor lasers has been extensively studied for many years. A number of methods, including gain-/Q-switching and different types of mode locking, have been exploited for the generation of picosecond and sub-picosecond pulses [1]. However, the shortest pulses produced by diode lasers are still much longer and weaker than those that are generated by advanced mode-locked solid-state laser systems [2]. On the other hand, an interesting class of devices based on superradiant emission from multiple contact diode laser structures has also been recently reported [3]. Superradiance (SR) is a transient quantum optics phenomenon based on the cooperative radiative recombination of a large number of oscillators, including atoms, molecules, e-h pairs, etc. SR in semiconductors can be used for the study of fundamental properties of e-h ensembles such as photon-mediated pairing, non-equilibrium e-h condensation, BSC-like coherent states and related phenomena. Due to the intrinsic parameters of semiconductor media, SR emission typically results in the generation of a high-power optical pulse or pulse train, where the pulse duration can be much less than 1 ps, under optimised bias conditions. Advantages of this technique over mode locking in semiconductor laser structures include potentially shorter pulsewidths and much larger peak powers. Moreover, the pulse repetition rate of mode-locked pulses is fixed by the cavity round trip time, whereas the repetition rate of SR pulses is controlled by the current bias and can be varied over a wide range. © 2012 IEEE.

Superradiant emission in semiconductor diode laser structures

This paper reviews recent advances in superradiant (SR) emission in semiconductors at room temperature, a process which has been shown to enable the generation on demand of high power picosecond or subpicosecond pulses across a range of different wavelengths. The different characteristic features of SR emission from semiconductor devices with bulk, quantum-well, and quantum-dot active regions are outlined, and particular emphasis is placed on comparing the characteristic features of SR with those of lasing. Finally, potential applications of SR pulses are discussed. © 1995-2012 IEEE.

High power, low-jitter encoded picosecond pulse generation using an rf-locked self-q-switched multicontact GaAs/GaAlAs diode laser

The RF locking of a self-Q-switching diode laser is shown to reduce the jitter of a 2.48 GHz train of 1 W peak power picosecond pulses to less than 300 fs. By using direct modulation of the loss in the Q-switched laser, direct encoding of data has been achieved at rates in excess of 2 Gbit/s.

Vertically-coupled microring laser array for dual-wavelength generation

We report the first demonstration of continuous-wave operation of a tunable, compact microring laser array based on a vertical-coupling architecture, well suited to larger-scale integration. Wavelength separation tunability from 4.9 to 6.3nm is observed. © 2006 Optical Society of America.

Experimental study on a diode-pumped passively mode-locking Nd : GdVO4/SESAM laser

We demonstrate a low-threshold and efficient diode-pumped passively continuous wave (CW) mode-locked Nd:GdVO4 laser with a reflective semiconductor saturable absorber mirror (SESAM). The threshold for the continuous wave was 0.36 W, and it is the lowest threshold for a continuous wave in a passively mode-locked Nd:GdVO4 laser to our knowledge. The maximum average output power of 1.82 W was obtained at a pump power of 6.65 W with a slope efficiency of about 29%. The CW mode-locked pulse duration was measured to be about 10.5 ps with a 116-MHz repetition rate.