958 resultados para Electrical
Resumo:
Blanching is an important operation in the shrimp canning process, in order to bring down the moisture content of the product to the required level, to allow the proteins to coagulate and to give proper texture, shape and characteristic pink colour to the meat. It has been observed that among other factors responsible for fluctuations in the drained weight in the canned prawns, concentration of brine used for blanching and the duration of blanching are important (Varma, Chaudhury and Pillai 1961). The papers gives details of experiments
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The working condition and atmosphere in a wooden fishing vessel are generally most injurious to the electrical systems. Therefore great care has to be taken in designing electrical systems for small c1afts. This paper deals with the difficult operating conditions and standardisation of electrical systems as applicable to small fishing vessels.
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This study was carried out for recognized ichthyophon and investigation of feeding and effects of water temperature, salinity and electrical conductivity on the population dynamic of Barbus grypus in the Dalaki and Helle river. In the study period, 2949 Barbus grypus was cached. The most of total length frequency was 200 to 300 mm and 2 to 3 years old. The oldest fish was8 years old with 756 mm total length. Fecundity was 950 upto 57400 oocyt per fish. Station no. 6 and 7 showed more temperature, fecundity and GSI than other stations. Females adulated before then males. Multiple stepwise regression of fecundity and RE (reproduction effort) showed significant correlation. Fishes of the upper parts of stream was more L than down stream stations. Condition factor of males was more than female, and for down stream stations was better than the other stations. Barbus grypus is omnivorous. Ichthyophon of Dalaki river include 4 family and 9 species that Capoeta capoeta intermadia was more than others species, but in the Helle river was 5 family and 9 species, that Liza abu zarudni was more than others.
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In this paper, we present experimental results describing enhanced readout of the vibratory response of a doubly clamped zinc oxide (ZnO) nanowire employing a purely electrical actuation and detection scheme. The measured response suggests that the piezoelectric and semiconducting properties of ZnO effectively enhance the motional current for electromechanical transduction. For a doubly clamped ZnO nanowire resonator with radius ~10 nm and length ~1.91 µm, a resonant frequency around 21.4 MHz is observed with a quality factor (Q) of ~358 in vacuum. A comparison with the Q obtained in air (~242) shows that these nano-scale devices may be operated in fluid as viscous damping is less significant at these length scales. Additionally, the suspended nanowire bridges show field effect transistor (FET) characteristics when the underlying silicon substrate is used as a gate electrode or using a lithographically patterned in-plane gate electrode. Moreover, the Young's modulus of ZnO nanowires is extracted from a static bending test performed on a nanowire cantilever using an AFM and the value is compared to that obtained from resonant frequency measurements of electrically addressed clamped–clamped beam nanowire resonators.
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A superconducting fault current limiter (SFCL) in series with a downstream circuit breaker could provide a viable solution to controlling fault current levels in electrical distribution networks. In order to integrate the SFCL into power grids, we need a way to conveniently predict the performance of the SFCL in a given scenario. In this paper, short circuit analysis based on the electromagnetic transient program was used to investigate the operational behavior of the SFCL installed in an electrical distribution grid. System studies show that the SFCL can not only limit the fault current to an acceptable value, but also mitigate the voltage sag. The transient recovery voltage (TRV) could be remarkably damped and improved by the presence of the SFCL after the circuit breaker is opened to clear the fault. © 2007 British Crown Copyright.
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We investigate the electrical properties of Silicon-on-Insulator photonic crystals as a function of doping level and air filling factor. A very interesting trade-off between conductivity and optical losses in L3 cavities is also found. © 2011 IEEE.
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We investigate the electrical properties of silicon-on-insulator (SOI) photonic crystals as a function of both doping level and air filling factor. The resistance trends can be clearly explained by the presence of a depletion region around the sidewalls of the holes that is caused by band pinning at the surface. To understand the trade-off between the carrier transport and the optical losses due to free electrons in the doped SOI, we also measured the resonant modes of L3 photonic crystal nanocavities and found that surprisingly high doping levels, up to 1018 / cm3, are acceptable for practical devices with Q factors as high as 4× 104. © 2011 American Institute of Physics.
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Thin films (100-500 nm) of the Si:O alloy have been systematically characterized in the optical absorption and electrical transport behavior, by varying the Si content from 43 up to 100 at. %. Magnetron sputtering or plasma enhanced chemical vapor deposition have been used for the Si:O alloy deposition, followed by annealing up to 1250 °C. Boron implantation (30 keV, 3-30× 1014 B/cm2) on selected samples was performed to vary the electrical sheet resistance measured by the four-point collinear probe method. Transmittance and reflectance spectra have been extracted and combined to estimate the absorption spectra and the optical band gap, by means of the Tauc analysis. Raman spectroscopy was also employed to follow the amorphous-crystalline (a-c) transition of the Si domains contained in the Si:O films. The optical absorption and the electrical transport of Si:O films can be continuously and independently modulated by acting on different parameters. The light absorption increases (by one decade) with the Si content in the 43-100 at. % range, determining an optical band gap which can be continuously modulated into the 2.6-1.6 eV range, respectively. The a-c phase transition in Si:O films, causing a significant reduction in the absorption coefficient, occurs at increasing temperatures (from 600 to 1100 °C) as the Si content decreases. The electrical resistivity of Si:O films can be varied among five decades, being essentially dominated by the number of Si grains and by the doping. Si:O alloys with Si content in the 60-90 at. % range (named oxygen rich silicon films), are proved to join an appealing optical gap with a viable conductivity, being a good candidate for increasing the conversion efficiency of thin-film photovoltaic cell. © 2010 American Institute of Physics.