Heavy metal concentrations in some organs of African catfish (Clarias gariepinus) from Eko-Ende Dam, Ikirun, Nigeria

The contents of the heavy metals Fe, Zn, Cu, Mn, Pb, Cd and As were examined in the liver, heart, gills, kidney and muscles of the fish Clarias gariepinus from Eko-Ende dam in Ikirun, the capital of Ifelodun Local Government of Osun State, Nigeria. C. gariepinus is the fish of choice and the most demanded in the southwest of Nigeria. The highest metal concentrations were in the liver and the gills while the lowest was in the muscles. The general deceasing order of metal accumulation in the organs was Fe > Zn > Cu > Mn > Cd. Lead and arsenic were not detected in any organ. The values were of lower concentrations than found in many other dams and rivers in Nigeria and some other countries. The values were also lower than the FAO/WHO recommended maximum limits in fish samples, making the fish to be safe and not of any hazards for the consumers.

Studies on arsenical creosote as a wood preservative for marine structures. Part 2. Observation on leaching, corrosion and resistance to borer attack

A detailed study on arsenical creosote with reference to leaching, corrosion and anti-borer properties was carried out. Results showed that aging had very little effect on the preservative which suggested better fixation of the preservative into the wood. Corrosion of mild steel, galvanised iron, aluminium-magnesium alloy (M57S) and copper panels in the preservative was found to be negligible. Normal creosote and low temperature creosote of Regional Research Laboratory, Hyderabad, both fortified with arsenic trioxide resisted borer damage on wooden panels for a period of over five months in the port of Cochin. The performance of low temperature creosote fortified with arsenic was found to be equally satisfactory when compared to normal creosote fortified in the same manner. A loading of 208.6 Kgs/ml³ for Haldu (Adina cordifolia) and 138 Kgs/m³ for Mango (Mangifera indica) in the case of normal creosote and 177 Kgs/m³ for Mango the case of RRL creosote were found to be sufficient for treating the wood.

The zonation of soft-bottom sediments in Gorgan Bay (Caspian Sea) using macrobenthos as indicator of ecological health

In this study, in order to assess the ecological health status and zoning of soft bottom of Gorgan Bay, the spatial and temporal distribution of macrofauna and their relationship with environmental stress were investigated. Sediment samples were collected using a Van Veen grab at 22 sampling points, seasonally during 2012-2013. The averages (±SD) of the percentages of sand, silt, clay and TOM (Total Organic Matter) in the sediment samples were determined (44.4± 15, 53.4 ± 14, and 2.2 ±2.2 and 7.2% ± 1.6, respectively). Our results showed that mean (range) of Al, As, Cu, Fe, Ni, Pb and Zn in the sediment samples were 1.2 % (0.4-2.1), 4.8 (2.5- 10.3) ppm, 10.5 (4.4-16.9) ppm, 1 (0.4 – 1.6) % , 13.6 (6.2-21.5) ppm, 9.1 (4.7-12.9) ppm and 23.9 (3.1-39.4) ppm, respectively. In spring, both Al and Ni were higher than the guideline level. In the event that arsenic was exceeds the guidelines in summer. In this study, 14 species of macrofauna from 12 families were identified. Polychaeta with 3 species was the most dominant group in terms of abundance. The four most abundant taxa making up 85% of all specimens (Streblospio gynobranchiata, Tubificidae, Hediste versicolor and Abra segmentum). The western area were characterized by the higher species diversity (H', 1.94). So Gorgan Bay presents transitional macrobenthic assemblages that are spatially distributed along substrate gradients .The mean of Shannon index, BENTIX, BO2A, AMBI and M-AMBI in the bay was 1.3, 2.2, 0.4, 3.2 and 0.65 respectively. According to the results of these indices, ecological status of the western part of the bay assessed better than the other parts. According to the results of the nmMDS (non-metric Multidimensional Scaling), PCA (Principal Components Analysis), the map of distribution of heavy metals and the map of the ecological status , it seems Gorgan Bay is divided into two separate zones (the eastern and the western parts).M-AMBI finaly introduced reliable index for assessing the ecological status of the Bay.

TRANSIENT SCANNING ELECTRON BEAM ANNEALING METHODS USED TO STUDY DIFFUSION AND DEFECTS IN IMPLANTED SILICON.

Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.

Effects of arsenate on the growth and microcystin production of Microcystis aeruginosa isolated from Taiwan as influenced by extracellular phosphate

Arsenic pollution and eutrophication are both prominent issues in the aquaculture ponds of Taiwan. It is important to study the effects of arsenic on algal growth and toxin production in order to assess the ecological risk of arsenic pollution, or at least to understand naturally occurring ponds. The sensitivity of algae to arsenate has often been linked to the structural similarities between arsenate and phosphate. Thus, in this study we examined the effects of arsenate (10(-8) to 10(-4) M) on Microcystis aeruginosa TY-1 isolated from Taiwan, under two phosphate regimes. The present study showed that M. aeruginosa TY-1 was arsenate tolerant up to 10(-4) M, and that this tolerance was not affected by extracellular phosphate. However, it seems that extracellular phosphate contributed to microcystin production and leakage by M. aeruginosa in response to arsenate. Under normal phosphate conditions, total toxin yields after arsenate treatment followed a typical inverted U-shape hormesis, with a peak value of 2.25 +/- 0.06 mg L-1 in the presence of 10(-7) M arsenate, whereas 10(-8) to 10(-6) M arsenate increased leakage of similar to 75% microcystin. Under phosphate starvation, total toxin yields were not affected by arsenate, while 10(-6) and 10(-5) M arsenate stimulated microcystin leakage. It is suggested that arsenate may play a role in the process of microcystin biosynthesis and excretion. Given the arsenic concentrations in aquaculture ponds in Taiwan, arsenate favors survival of toxic M. aeruginosa in such ponds, and arsenate-stimulated microcystin production and leakage may have an impact on the food chain.

Effects of Arsenate on Microcystin Content and Leakage of Microcystis Strain PCC7806 Under Various Phosphate Regimes

Both arsenic pollution and eutrophication are prominent environmental issues when considering the problem of global water pollution. It is important to reveal the effects of arsenic species on cyanobacterial growth and toxin yields to assess ecological risk of arsenic pollution or at least understand naturally occurring blooms. The sensitivity of cyanobacteria to arsenate has often been linked to the structural similarities of arsenate and phosphate. Thus, we approached the effect of arsenate with concentrations from 10(-8) to 10(-4) M on Microcystis strain PCC7806 under various phosphate regimes. The present study showed that Microcystis strain PCC7806 was arsenate tolerant up to 10(-4) M. And such tolerance was without reference to both content of intra- and extra-cellular phosphate. It seems that arsenate involved the regulation of microcystin synthesis and cellular polyphosphate contributed to microcystin production of Microcystis responding to arsenate, since there was a positive linear correlation of the cellular microcystin quota with the exposure concentration of arsenate when the cells were not preconditioned to phosphate starvation. It is presumed that arsenate could help to actively export microcystins from living Microcystis cells when preconditioned to phosphate starvation and incubated with the medium containing 1 mu M phosphate. This study firstly provided evidence that microcystin content and/or release of Microcystis might be impacted by arsenate if it exists in harmful algal blooms. (C) 2008 Wiley Periodicals, Inc. Environ Toxicol 24:97 94, 2009.

Environmental threats to children's health in Southeast Asia and the Western Pacific

The Southeast Asia and Western Pacific regions contain half of the world's children and are among the most rapidly industrializing regions of the globe. Environmental threats to children's health are widespread and are multiplying as nations in the area undergo industrial development and pass through the epidemiologic transition. These environmental hazards range from traditional threats such as bacterial contamination of drinking water and wood smoke in poorly ventilated dwellings to more recently introduced chemical threats such as asbestos construction materials; arsenic in groundwater; methyl isocyanate in Bhopal, India; untreated manufacturing wastes released to landfills; chlorinated hydrocarbon and organophosphorous pesticides; and atmospheric lead emissions from the combustion of leaded gasoline. To address these problems, pediatricians, environmental health scientists, and public health workers throughout Southeast Asia and the Western Pacific have begun to build local and national research and prevention programs in children's environmental health. Successes have been achieved as a result of these efforts: A cost-effective system for producing safe drinking water at the village level has been devised in India; many nations have launched aggressive antismoking campaigns; and Thailand, the Philippines, India, and Pakistan have all begun to reduce their use of lead in gasoline, with resultant declines in children's blood lead levels. The International Conference on Environmental Threats to the Health of Children, held in Bangkok, Thailand, in March 2002, brought together more than 300 representatives from 35 countries and organizations to increase awareness on environmental health hazards affecting children in these regions and throughout the world. The conference, a direct result of the Environmental Threats to the Health of Children meeting held in Manila in April 2000, provided participants with the latest scientific data on children's vulnerability to environmental hazards and models for future policy and public health discussions on ways to improve children's health. The Bangkok Statement, a pledge resulting from the conference proceedings, is an important first step in creating a global alliance committed to developing active and innovative national and international networks to promote and protect children's environmental health.

Extremely low density InAs quantum dots with no wetting layer

Extremely low density InAs quantum dots (QDs) are grown by molecular beam droplet epitaxy, The gallium deposition amount is optimized to saturate exactly the excess arsenic atoms present on the GaAs substrate surface during growth, and low density InAs/GaAs QDs (4x10(6) cm(-2)) are formed by depositing 0.65 monolayers (ML) of indium. This is much less than the critical deposition thickness (1.7 ML), which is necessary to form InAs/GaAs QDs with the conventional Stranski-Krastanov growth mode. The narrow photoluminescence line-width of about 24 meV is insensitive to cryostat temperatures from 10 K to 250 K. All measurements indicate that there is no wetting layer connecting the QDs.

Abatement of waste gases and water during the processes of semiconductor fabrication

The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

Annealing-induced evolution of defects in low-temperature-grown GaAs-related materials

Infrared absorption spectroscopy, optical transient current spectroscopy (OTCS), and photoluminescence (PL) spectroscopy are used to investigate the annealing induced evolution of defects in low-temperature (LT)-grown GaAs-related materials. Two LT samples of bulk GaAs (sample A) and GaAs/AlxGa1-xAs multiple-quantum-well. (MQW) structure (sample B) were grown at 220 and 320 degreesC on (001) GaAs substrates, respectively. A strong defect-related absorption band has been observed in both as-grown samples A and B. It becomes weaker in samples annealed at temperatures above 600 degreesC. In sample A, annealed in the range of 600-800 degreesC, a large negative decay signal of the optical transient current (OTC) is observed in a certain range of temperature, which distorts deep-level spectra measured by OTCS, making it difficult to identify any deep levels. At annealing temperatures of 600 and 700 degreesC, both As-Ga antisite and small As cluster-related deep levels are identified in sample B. It is found that compared to the As cluster, the As-Ga antisite has a larger activation energy and carrier capture rate. At an annealing temperature of 800 degreesC, the large negative decay signal of the OTC is also observed in sample B. It is argued that this negative decay signal of the OTC is related to large arsenic clusters. For sample B, transient PL spectra have also been measured to study the influence of the, defect evolution on optical properties of LT GaAs/AlxGa1-xAs MQW structures. Our results clearly identify a defect evolution from AS(Ga) antisites to arsenic clusters after annealing.

Investigation of defects in low-temperature-grown GaAs using optical transient spectroscopy

Optical transient current spectroscopy (OTCS) has been used to investigate defects in the low-temperature-grown GaAs after postgrowth rapid thermal annealing (RTA). Two samples A and B were grown at 220 degreesC and 360 degreesC on (001) GaAs substrates, respectively. After growth, samples were subjected to 30s RTA in the range of 500-800 degreesC. Before annealing, X-ray diffraction measurements show that the concentrations of the excess arsenic for samples A and B are 2.5 x 10(19) and 1 x 10(19) cm(-3), respectively. It is found that there are strong negative decay signals in the optical transient current (OTC) for the annealed sample A. Due to the influence of OTC strong negative decay signals, it is impossible to identify deep levels clearly from OTCS. For a comparison, three deep levels can be identified for sample B before annealing. They are two shallower deep levels and the so-called As-Ga antisite defect. At the annealing temperature of 600 degreesC, there are still three deep levels. However, their structures are different from those in the as-grown sample. OTC strong negative decay signals are also observed for the annealed sample B. It is argued that OTC negative decay signals are related to arsenic clusters. (C) 2000 Elsevier Science B.V. All rights reserved.

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly affected the crystal quality of GaInNAs rather than the N concentration. The N concentration dropped rapidly when T-g exceeded 500 degrees C. Considering N desorption alone is insufficient to account for the strong falloff of the N concentration with T-g over 500 degrees C, the effect of thermally-activated N surface segregation must be taken into account. The N concentration was independent of the arsenic pressure and the In concentration in GaInNAs layers, but inversely proportional to the growth rate. Based on the experimental results, a kinetic model including N desorption and surface segregation was developed to analyze quantitatively the N incorporation in MBE growth. (C) 2000 American Institute of Physics. [S0003-6951(00)00928-1].

A Raman scattering study of GaAs: As films lifted off GaAs substrate

We performed Raman scattering investigations on low-temperature-grown (LTG) films of GaAs that had been lifted off the GaAs substrate. The Raman measurements unambiguously show the effects of excess arsenic on phonon scattering from LTG films of GaAs. The larger downwards shift of the LO phonon frequency for unannealed free-standing films is explained by invoking the elimination of mismatch strain. The Raman signal due to precipitates of elemental arsenic in the annealed GaAs : As films is determined. It is confirmed that the arsenic clusters formed by rapid thermal annealing are mainly amorphous, giving rise a broad Raman peak in the range 180-260 cm(-1).

Self-assembled GaAs quantum rings by MBE droplet epitaxy

Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200 C to 300 C under As flux (BEP) of about 1.0 x 10(-6) Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.