Hybrids of carbon nanotube forests and gold nanoparticles for improved surface plasmon manipulation.

We report the fabrication and characterization of hybrids of vertically-aligned carbon nanotube forests and gold nanoparticles for improved manipulation of their plasmonic properties. Raman spectroscopy of nanotube forests performed at the separation area of nanotube-nanoparticles shows a scattering enhancement factor of the order of 1 × 10(6). The enhancement is related to the plasmonic coupling of the nanoparticles and is potentially applicable in high-resolution scanning near-field optical microscopy, plasmonics, and photovoltaics.

Auxetic nuclei in embryonic stem cells exiting pluripotency.

Embryonic stem cells (ESCs) self-renew in a state of naïve pluripotency in which they are competent to generate all somatic cells. It has been hypothesized that, before irreversibly committing, ESCs pass through at least one metastable transition state. This transition would represent a gateway for differentiation and reprogramming of somatic cells. Here, we show that during the transition, the nuclei of ESCs are auxetic: they exhibit a cross-sectional expansion when stretched and a cross-sectional contraction when compressed, and their stiffness increases under compression. We also show that the auxetic phenotype of transition ESC nuclei is driven at least in part by global chromatin decondensation. Through the regulation of molecular turnover in the differentiating nucleus by external forces, auxeticity could be a key element in mechanotransduction. Our findings highlight the importance of nuclear structure in the regulation of differentiation and reprogramming.

Ultra-thin silicon nitride microring resonator for biophotonic applications at 970nm wavelength

We experimentally demonstrate an ultra-thin silicon nitride microring resonator operating at wavelength of 970nm that is favorable for large variety of biophotonic applications. Optimization parameters for improved sensitivity and light-mater interaction are presented. © 2010 Optical Society of America.

Stretchable liquid-crystal blue-phase gels.

Liquid-crystalline polymers are materials of considerable scientific interest and technological value. An important subset of these materials exhibit rubber-like elasticity, combining the optical properties of liquid crystals with the mechanical properties of rubber. Moreover, they exhibit behaviour not seen in either type of material independently, and many of their properties depend crucially on the particular mesophase employed. Such stretchable liquid-crystalline polymers have previously been demonstrated in the nematic, chiral-nematic, and smectic mesophases. Here, we report the fabrication of a stretchable gel of blue phase I, which forms a self-assembled, three-dimensional photonic crystal that remains electro-optically switchable under a moderate applied voltage, and whose optical properties can be manipulated by an applied strain. We also find that, unlike its undistorted counterpart, a mechanically deformed blue phase exhibits a Pockels electro-optic effect, which sets out new theoretical challenges and possibilities for low-voltage electro-optic devices.

In situ intercalation dynamics in inorganic-organic layered perovskite thin films.

The properties of layered inorganic semiconductors can be manipulated by the insertion of foreign molecular species via a process known as intercalation. In the present study, we investigate the phenomenon of organic moiety (R-NH3I) intercalation in layered metal-halide (PbI2)-based inorganic semiconductors, leading to the formation of inorganic-organic (IO) perovskites [(R-NH3)2PbI4]. During this intercalation strong resonant exciton optical transitions are created, enabling study of the dynamics of this process. Simultaneous in situ photoluminescence (PL) and transmission measurements are used to track the structural and exciton evolution. On the basis of the experimental observations, a model is proposed which explains the process of IO perovskite formation during intercalation of the organic moiety through the inorganic semiconductor layers. The interplay between precursor film thickness and organic solution concentration/solvent highlights the role of van der Waals interactions between the layers, as well as the need for maintaining stoichiometry during intercalation. Nucleation and growth occurring during intercalation matches a Johnson-Mehl-Avrami-Kolmogorov model, with results fitting both ideal and nonideal cases.

First-principles LDA plus U and GGA plus U study of neptunium dioxide

We have performed a systematic first-principles investigation to calculate the electronic structures, mechanical properties, and phonon-dispersion curves of NpO2. The local-density approximation+U and the generalized gradient approximation+U formalisms have been used to account for the strong on-site Coulomb repulsion among the localized Np 5f electrons. By choosing the Hubbard U parameter around 4 eV, the orbital occupancy characters of Np 5f and O 2p are in good agreement with recent experiments [A. Seibert, T. Gouder, and F. Huber, J. Nucl. Mater. 389, 470 (2009)]. Comparing to our previous study of ThO2, we note that stronger covalency exists in NpO2 due to the more localization behavior of 5f electrons of Np in line with the localization-delocalization trend exhibited by the actinides series.

Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers

The optical properties of two kinds of InGaN/GaN quantum-wells light emitting diodes, one of which was doped with Si in barriers while the other was not, are comparatively investigated using time-integrated photoluminescence and time-resolved photoluminescence techniques. The results clearly demonstrate the coexistence of the band gap renormalization and phase-space filling effect in the structures with Si doped barriers. It is surprisingly found that photogenerated carriers in the intentionally undoped structures decay nonexponentially, whereas carriers in the Si doped ones exhibit a well exponential time evolution. A new model developed by O. Rubel, S. D. Baranovskii, K. Hantke, J. D. Heber, J. Koch, P. Thomas, J. M. Marshall, W. Stolz, and W. H. Ruhle [J. Optoelectron. Adv. Mater. 7, 115 (2005)] was used to simulate the decay curves of the photogenerated carriers in both structures, which enables us to determine the localization length of the photogenerated carriers in the structures. It is found that the Si doping in the barriers not only leads to remarkable many-body effects but also significantly affects the carrier recombination dynamics in InGaN/GaN layered heterostructures. (c) 2006 American Institute of Physics.

The diphasic nc-Si/a-Si : H thin film with improved medium-range order

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R-H = [H-2]/[SiH4]) and the substrate temperature (T-s) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H-2* and their congeries. With the increase of T-s from 150 to 275 degreesC, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. (C) 2004 Elsevier B.V. All rights reserved.

Design of Photonic Crystal Semiconductor Optical Amplifier With Polarization Independence

Slow-light effects in photonic crystal (PC) waveguides can enhance light-mater interaction near the photonic band edge, which can be used to design a short cavity length semiconductor optical amplifier (SOA). In this paper, a novel SOA based on slow-light effects in PC waveguides (PCSOA) is presented. To realize the amplification of the optical signal with polarization independence, a PCSOA is designed with a compensated structure. The cascaded structure leads to a balanced amplification to the TE and TM polarized light.

Extracting nanobelt mechanical properties from nanoindentation

A three-spring-in-series model is proposed for the nanobelt (NB) indentation test. Compared with the previous two-spring-in-series model, which considers the bending stiffness of atomic force microscope cantilever and the indenter/NB contact stiffness, this model adds a third spring of the NB/substrate contact stiffness. NB is highly flexural due to its large aspect ratio of length to thickness. The bending and lift-off of NB form a localized contact with substrate, which makes the Oliver-Pharr method [W. C. Oliver and G. M. Pharr, J. Mater. Res. 7, 1564 (1992)] and Sneddon method [I. N. Sneddon, Int. J. Eng. Sci. 3, 47 (1965)] inappropriate for NB indentation test. Because the NB/substrate deformation may have significant impact on the force-indentation depth data obtained in experiment, the two-spring-in-series model can lead to erroneous predictions on the NB mechanical properties. NB in indentation test can be susceptible to the adhesion influence because of its large surface area to volume ratio. NB/substrate contact and adhesion can have direct and significant impact on the interpretation of experimental data. Through the three-spring-in-series model, the influence of NB/substrate contact and adhesion is analyzed and methods of reducing such influence are also suggested. (C) 2010 American Institute of Physics. [doi:10.1063/1.3432748]

土壤持水特征测定中质量含水量、吸力和容重三者间定量关系I.填装土壤

在试验过程中,通常采用一个土样进行连续试验来测定土壤的持水特征。此时,土样的有机质、黏粒矿物类型和阳离子交换量等性质基本保持不变,而土壤的容重在水力学和机械压力共同作用下会发生很大的变化。因此,我们认为实测的土壤持水特征不再是土壤吸力和含水量相对应的一条曲线,而是由土壤质量含水量、吸力和容重三变量共同确定的一个曲面。本文在Brooks-Corey土壤水分特征曲线模型的基础上,提出了两种描述土壤质量含水量、吸力和容重三变量关系的曲面模型,分析了模型的优缺点和适用条件,并采用离心机石蜡控容重法实测了四种质地填装土壤的三变量特征曲面。研究结果表明:土壤持水特征是由土壤质量含水量、吸力和容重三变量共同确定的一个曲面这一假设是合理的;类似于Brooks-Corey模型的两种幂函数经验曲面模型能够合理地描述填装土壤的实测数据,决定系数均大于0.94;模型Ⅰ的拟合效果略好于模型Ⅱ,但模型Ⅱ包含两个物理意义明确的参数,具有一定的优势。这一研究将为校正容重变化对土壤水力学参数的影响提供新的途径。

Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature

The para-sexiphenyl (p-6P) monolayer film induces weak epitaxy growth (WEG) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [Wang et al., Adv. Mater. 2007, 19, 2168]. The growth behavior and morphology of p-6P monolayer film play decisive roles on WEG. Here, we investigated the growth behavior of p-6P submonolayer film as a function of the substrate temperature. Its growth exhibited two different mechanisms at high and low substrate temperature.

Reduction from Eu3+ to Eu2+ in BaAl2O4 : Eu phosphor prepared in an oxidizing atmosphere and luminescent properties of BaAl2O4 : Eu

A reduction phenomenon of Eu3+ -> Eu2+ was observed for the first time when Eu3+ ions were doped into an AlO4-tetrahedron-containing compound BaAl2O4 in an oxidizing atmosphere of air by high-temperature solid-state reaction. X-ray powder diffraction patterns and photoluminescent spectra are used to confirm the compound structure and detect the simultaneous existence of both divalent and trivalent europium ions, respectively. The abnormal Eu3+ -> Eu2+ reduction is explained by a charge compensation model. Spectroscopic properties of BaAl2O4:Eu are discussed and Eu2+ emission spectrum shows consistence with the results reported by Katsumata et a]. [J. Cryst. Growth 198/199 (1999) 869.] and Lin et al. [Mater. Chem. Phys. 70 (2001) 156.].