Future trends in Animal Breeding due to new genetic tecnologies

The Darwin theory of evolution by natural selection is based on three principles: (a) variation; (b) inheritance; and (c) natural selection. Here, I take these principles as an excuse to review some topics related to the future research prospects in Animal Breeding. With respect to the first principle I describe two forms of variation different from mutation that are becoming increasingly important: variation in copy number and microRNAs. With respect to the second principle I comment on the possible relevance of non-mendelian inheritance, the so-called epigenetic effects, of which the genomic imprinting is the best characterized in domestic species. Regarding selection principle I emphasize the importance of selection for social traits and how this could contribute to both productivity and animal welfare. Finally, I analyse the impact of molecular biology in Animal Breeding, the achievements and limitations of quantitative trait locus and classical marker-assisted selection and the future of genomic selection

Laboratorio de Bienestar Porcino: Primeros Resultados y Primeras Conclusiones

La puesta en marcha del Laboratorio de Bienestar Porcino comenzó con una iniciativa de un grupo de investigadores de la E.T.S.I. Agrónomos de Madrid (UPM) que, con el apoyo y financiación de la empresa Tragsa, desarrolló un modelo de alojamiento para cebo de cerdos que incluía un sistema patentado de separación in situ de heces y orina.

Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 °C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission

Understanding the selective area growth of GaN nanocolumns by MBE using Ti nanomasks

The influence of the substrate temperature, III/V flux ratio, and mask geometry on the selective area growth of GaN nanocolumns is investigated. For a given set of growth conditions, the mask design (diameter and pitch of the nanoholes) is found to be crucial to achieve selective growth within the nanoholes. The local III/V flux ratio within these nanoholes is a key factor that can be tuned, either by modifying the growth conditions or the mask geometry. On the other hand, some specific growth conditions may lead to selective growth but not be suitable for subsequent vertical growth. With optimized conditions, ordered GaN nanocolumns can be grown with a wide variety of diameters. In this work, ordered GaN nanocolumns with diameter as small as 50 nm are shown.

InN/InGaN multiple quantum wells emitting at 1.5 mu m grown by molecular beam epitaxy

This work reports on the growth by molecular beam epitaxy and characterization of InN/InGaN multiple quantum wells (MQWs) emitting at 1.5 μm. X-ray diffraction (XRD) spectra show satellite peaks up to the second order. Estimated values of well (3 nm) and barrier (9 nm) thicknesses were derived from transmission electron microscopy and the fit between experimental data and simulated XRD spectra. Transmission electron microscopy and XRD simulations also confirmed that the InGaN barriers are relaxed with respect to the GaN template, while the InN MQWs grew under biaxial compression on the InGaN barriers. Low temperature (14 K) photoluminescence measurements reveal an emission from the InN MQWs at 1.5 μm. Measurements as a function of temperature indicate the existence of localized states, probably due to InN quantum wells’ thickness fluctuations as observed by transmission electron microscopy.

Critical aspects of substrate nanopatterning for the ordered growth of GaN nanocolumns.

Precise and reproducible surface nanopatterning is the key for a successful ordered growth of GaN nanocolumns. In this work, we point out the main technological issues related to the patterning process, mainly surface roughness and cleaning, and mask adhesion to the substrate. We found that each of these factors, process-related, has a dramatic impact on the subsequent selective growth of the columns inside the patterned holes. We compare the performance of e-beam lithography, colloidal lithography, and focused ion beam in the fabrication of hole-patterned masks for ordered columnar growth. These results are applicable to the ordered growth of nanocolumns of different materials.

Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography

Selective area growth of a-plane GaN nanocolumns by molecular beam epitaxy was performed for the first time on a-plane GaN templates. Ti masks with 150 nm diameter nanoholes were fabricated by colloidal lithography, an easy, fast and cheap process capable to handle large areas. Even though colloidal lithography does not provide a perfect geometrical arrangement like e-beam lithography, it produces a very homogeneous mask in terms of nanohole diameter and density, and is used here for the first time for the selective area growth of GaN. Selective area growth of a-plane GaN nanocolumns is compared, in terms of anisotropic lateral and vertical growth rates, with GaN nanocolumns grown selectively on the c-plane

Inspección de calidad de sandías: sistema acústico portátil

Un equipo de la Universidad Politécnica de Madrid diseña un equipo portátil para la detección no destructiva de los problemas de calidad de la pulpa de las sandías sin semillas.

InN/GaN heterojunction electrical behavior

Indium nitride (InN) has been the subject of intense research in recent years. Some of its most attractive features are its excellent transport properties such as its small band edge electron effective mass, high electron mobilities and peak drift velocities, and high frequency transient drift velocity oscillations [1]. These suggest enormous potential applications for InN in high frequency electronic devices. But to date the high unintentional bulk electron concentration (n~1018 cm-3) of undoped InN samples and the surface electron accumulation layer make it a hard task to create a reliable metalsemiconductor Schottky barrier. Some attempts have been made to overcome this problem by means of material oxidation [2] or deposition of insulators [3]. In this work we present a way to obtain an electrical rectification behaviour by means of heterojunction growth. Due to the big band gap differences among nitride semiconductors, it’s possible to create a structure with high band offsets. In InN/GaN heterojunctions, depending on the GaN doping, the magnitude of conduction and valence band offset are critical parameters which allow distinguishing among different electrical behaviours. The earliest estimate of the valence band offset at an InN–GaN heterojunction in a wurtzite structure was measured to be ~0.85 eV [4], while the Schottky barrier heights were determined to be ~ 1,4 eV [5].We grew In-face InN layer with varying thickness (between 150 nm and 1 mm) by plasma assisted molecular beam epitaxy (PA-MBE) on GaNntemplates (GaN/Al2O3), with temperatures ranging between 300°C and 450°C. The different doping in GaN template (Si doping, Fe doping and Mg doping) results in differences in band alignments of the two semiconductors changing electrical barriers for carriers and consequently electrical conduction behaviour. The processing of the devices includes metallization of the ohmic contacts on InN and GaN, for which we used Ti/Al/Ni/Au. Whereas an ohmic contact on InN is straightforward, the main issue was the fabrication of the contact on GaN due to the very low decomposition temperature of InN. A standard ohmic contact on GaN is generally obtained by high temperature rapid thermal annealing (RTA), typically done between 500ºC and 900ºC[6]. In this case, the limitation due to the presence of In-face InN imposes an upper limit on the temperature for the thermal annealing process and ohmic contact formation of about 450°C. We will present results on the morphology of the InN layers by X-Ray diffraction and SEM, and electrical measurements, in particular current-voltage and capacitance-voltage characteristics.

The logarithmic spiral, autoisoptic curve

In the Line of Investigation that in the department of “Technical Drawing” in the School of Agriculture Engineering of Madrid, we carry out on the study of The Technical Curves and his singularities, we demonstrate an interesting property of the Logarithmic Spiral. The demonstrated property consists of which the logarithmic spiral is a autoisoptic curve, that is to say that if from a point P anyone of the spiral tangent straight lines draw up to the previous arc, these form a constant angle α. This demonstration is novel and in addition we get to contribute a method to calculate the angle α given the equation of the spiral.

Fosa de purines vs separación in situ de heces y orina en porcino de cebo: producción de purín y de estiércol

El objetivo de este estudio fue comparar, en un alojamiento de cebo de porcino con enrejillado parcial (Laboratorio de Bienestar Porcino), la producción de residuos con un sistema tradicional de fosa de purines frente a un sistema de separación in situ con cinta plana. La fosa se vació cada cinco semanas, y la cinta se vació dos veces al día a lo largo del periodo de cebo. Ambos sistemas tuvieron el mismo tipo de ventilación por extracción bajo suelo. La cantidad de residuos generados con la separación in situ fue el 70,50% de la correspondiente al sistema tradicional, que, a su vez, fue sensiblemente menor que la habida en las explotaciones comerciales. El sistema de ventilación por extracción bajo suelo fue muy eficiente para la evaporación de agua de las deyecciones y la consecuente reducción de la cantidad de residuos generados; asimismo, los resultados obtenidos ponen de manifiesto que la separación in situ permitió una notable reducción adicional de dicha cantidad, en comparación con el sistema tradicional.

Is it possible to discriminate the body weight loss?

Most studies have described how the weight loss is when different treatments are compared (1-3), while others have also compared the weight loss by sex (4), or have taken into account psychosocial (5) and lifestyle (6, 7) variables. However, no studies have examined the interaction of different variables and the importance of them in the weight loss.

Detection of growth-related QTLs in turbot (Scophtalmus maximux)

Background The turbot (Scophthalmus maximus) is a highly appreciated European aquaculture species. Growth related traits constitute the main goal of the ongoing genetic breeding programs of this species. The recent construction of a consensus linkage map in this species has allowed the selection of a panel of 100 homogeneously distributed markers covering the 26 linkage groups (LG) suitable for QTL search. In this study we addressed the detection of QTL with effect on body weight, length and Fulton's condition factor. Results Eight families from two genetic breeding programs comprising 814 individuals were used to search for growth related QTL using the panel of microsatellites available for QTL screening. Two different approaches, maximum likelihood and regression interval mapping, were used in order to search for QTL. Up to eleven significant QTL were detected with both methods in at least one family: four for weight on LGs 5, 14, 15 and 16; five for length on LGs 5, 6, 12, 14 and 15; and two for Fulton's condition factor on LGs 3 and 16. In these LGs an association analysis was performed to ascertain the microsatellite marker with the highest apparent effect on the trait, in order to test the possibility of using them for marker assisted selection. Conclusions The use of regression interval mapping and maximum likelihood methods for QTL detection provided consistent results in many cases, although the high variation observed for traits mean among families made it difficult to evaluate QTL effects. Finer mapping of detected QTL, looking for tightly linked markers to the causative mutation, and comparative genomics are suggested to deepen in the analysis of QTL in turbot so they can be applied in marker assisted selection programs.

Información molecular vs información genealógica en la gestión de poblaciones

Tanto en el campo de la conservación como en el de la mejora genética, se han propuesto diversos métodos para gestionar una población controlando la pérdida de diversidad genética. En poblaciones no subdivididas, el método aceptado es determinar la contribución de cada posible padre (i.e., el número de descendientes que cada individuo deja a la siguiente generación), minimizando el parentesco global de los padres ponderado por estas contribuciones (Meuwissen, 1997; Grundy et al., 1998; Fernández et al., 2003). Los coeficientes de parentesco se obtienen normalmente de la genealogía, y en dicho caso, se optimiza el parentesco global genealógico. Sin embargo, la información genealógica no está siempre disponible, en cuyo caso se pueden usar marcadores moleculares para calcular el parentesco molecular o estimar el parentesco genealógico (Toro et al., 2009). Así, cuando no se dispone de genealogías, se puede minimizar el parentesco molecular global o el parentesco global genealógico estimado con los marcadores. Fernández et al. (2005) estudiaron mediante simulaciones la capacidad de la información molecular de reemplazar a la información genealógica, y concluyeron que el uso exclusivo de información molecular era claramente insuficiente. En dicho estudio, los autores se basaron en un número limitado de marcadores microsatélites, del orden de decenas. En la actualidad, gracias a los métodos de secuenciación de última generación, disponemos de miles de marcadores de tipo SNP, lo que hace necesaria una revisión de aquellas investigaciones que concluían que la utilidad de la información molecular era limitada e inferior a la genealógica. En este estudio, reevaluamos vía simulaciones la capacidad de la información genómica de reemplazar a la información genealógica para mantener diversidad genética en programas de conservación, usando un número de SNPs en línea con los datos actualmente disponibles

Depuración genética de poblaciones mediante marcadores diagnóstico

La pérdida de diversidad genética, que conlleva descensos en eficacia biológica y pérdida de adaptabilidad, suele considerarse un fenómeno a evitar. Sin embargo determinadas poblaciones requieren la preservación del fondo genético diferenciado de otros grupos: han de ser mantenidas en pureza. El motivo puede ser económico: razas que proporcionan productos de interés (como los cerdos ibéricos o bovinos de raza Reggiana; Dalvit et al., 2007) razas, como en perros, que no se cruzan por motivos estéticos (Parker et al., 2004), etc. También en especies o razas salvajes amenazadas por su equivalente doméstico tiene interés el mantenimiento de su base genética diferenciada (Rhymer y Simberloff 1996; Allendorf et al., 2001). Si tenemos una población de interés que se ha cruzado (bien por error o por mala gestión) con otra y queremos recuperar su fondo genético original, tendremos que llevar a cabo un proceso de desintrogresión. Por ejemplo, poblaciones que quieren recuperarse a través de un banco de semen requieren la utilización de hembras de otra población cuyo fondo genético habría de ser eliminado (Hall y Bradley 1995