Dynamique de croissance par plasma RF magnétron des couches minces à base d’oxyde de zinc

Le but de cette thèse était d’étudier la dynamique de croissance par pulvérisation par plasma RF magnétron des couches minces à base d’oxyde de zinc destinées à des applications électroniques, optoélectroniques et photoniques de pointe. Dans ce contexte, nous avons mis au point plusieurs diagnostics permettant de caractériser les espèces neutres et chargées dans ce type de plasmas, notamment la sonde électrostatique, la spectroscopie optique d’émission et d’absorption, ainsi que la spectrométrie de masse. Par la suite, nous avons tenté de corréler certaines caractéristiques physiques de croissance des couches de ZnO, en particulier la vitesse de dépôt, aux propriétés fondamentales du plasma. Nos résultats ont montré que l’éjection d’atomes de Zn, In et O au cours de la pulvérisation RF magnétron de cibles de Zn, ZnO et In2O3 n’influence que très peu la densité d’ions positifs (et donc la densité d’électrons en supposant la quasi-neutralité) ainsi que la fonction de distribution en énergie des électrons (populations de basse et haute énergie). Cependant, le rapport entre la densité d’atomes d’argon métastables (3P2) sur la densité électronique décroît lorsque la densité d’atomes de Zn augmente, un effet pouvant être attribué à l’ionisation des atomes de Zn par effet Penning. De plus, dans les conditions opératoires étudiées (plasmas de basse pression, < 100 mTorr), la thermalisation des atomes pulvérisés par collisions avec les atomes en phase gazeuse demeure incomplète. Nous avons montré que l’une des conséquences de ce résultat est la présence d’ions Zn+ suprathermiques près du substrat. Finalement, nous avons corrélé la quantité d’atomes de Zn pulvérisés déterminée par spectroscopie d’émission avec la vitesse de dépôt d’une couche mince de ZnO mesurée par ellipsométrie spectroscopique. Ces travaux ont permis de mettre en évidence que ce sont majoritairement les atomes de Zn (et non les espèces excitées et/ou ioniques) qui gouvernent la dynamique de croissance par pulvérisation RF magnétron des couches minces de ZnO.

Preparation, Characterisation And Microwave Dielectric Properties Of Anbn-1o3n (N=5,6,8) Type Perovskite Compounds

The present study on the preparation , characterization and microwave dielectric properties of AnBn-1O3n (N=5,6,8) type perovskite compounds. The explored ceramics show dielectric constant between 11 and 54,quality factor in the range 2400 to 88900 GHz and Tf in the range -73 to +231ppm/0C.Most of the investigated cation deficient hexagonal perovskites show intermediate dielectric constant with high quality factors. This study gives a general introduction about material, scientific and technological aspects of DRs.Three important ,€r ,Q and Tf, used for the DR characterization are described. The relationship of the above parameters with the fundamental material characteristics is discussed. Different modes are excited when a DR is excited with suitable microwave spectrum of frequencies .A description of analytical determination of frequencies and construction of mode charts used for sample design and mode identification are also discussed. In this study several ceramics are developed for DR purposes, very little attention has been paid to grow the single crystals. It might be due to the fact that the difficulties and time involved in the growth of single crystals, big enough to function as microwave resonators make them expensive .However single crystals of these materials may have very high Q values. It is also possible that a better understanding of the dielectric properties in relation to the structure can be arrived using single crystals. Hence one of the future directions of dielectric resonator research should be to grow good quality single crystals of the above materials.

Growth of zinc oxide thin films for optoelectronic application by pulsed laser deposition

Zinc oxide (ZnO) thin films were deposited on quartz, silicon, and polymer substrates by pulsed laser deposition (PLD) technique at different oxygen partial pressures (0.007 mbar to 0.003 mbar). Polycrystalline ZnO films were obtained at room temperature when the oxygen pressure was between 0.003 mbar and .007 mbar, above and below this pressure the films were amorphous as indicated by the X-ray diffraction (XRD). ZnO films were deposited on Al2O3 (0001) at different substrate temperatures varying from 400oC to 600oC and full width half maximum (FWHM) of XRD peak is observed to decrease as substrate temperature increases. The optical band gaps of these films were nearly 3.3 eV. A cylindrical Langmuir probe is used for the investigation of plasma plume arising from the ZnO target. The spatial and temporal variations in electron density and electron temperature are studied. Optical emission spectroscopy is used to identify the different ionic species in the plume. Strong emission lines of neutral Zn, Zn+ and neutral oxygen are observed. No electronically excited O+ cations are identified, which is in agreement with previous studies of ZnO plasma plume.

Compact Wideband Antenna for 2.4 GHz WLAN Applications

A novel compact wideband antenna for wireless local area network (WLAN) applications in the 2.4 GHz band are presented. The proposed low profile antenna of dimensions 15 x 14.5 x 1.6 mm offers 18.6% bandwidth and an average gain of~5 dBi. The antenna can be excited directly using a 50 coaxial probe

Polarisation Agile Microstrip Array Antenna Element

A new microstrip antenna element is described which exhibits polarization agility. This is achieved by employing a T-slot radiator which is driven by the edge fields of a balanced microstrip line. The balanced line can support two propagating modes. namely. an even mode and an odd mode, and be switching between these modes. the orthogonal arms of the T-slot radiator are separately excited thus forming orthogonally polarized radiated fields. A nucrostrip patch antenna, which displays polarization agility using the sane mechanism, is also described

A compact very-high-permittivity dielectric-eye resonator antenna for multiband wireless applications

very-high-permittivity (e, = 100) multiband dielectrice> e resonator antenna is presented. The compact antenna, excited by a m:'crostrip line, resonates at two frequencies centered around the 1.9- GHz and 2.4-GHz bands with identical polarization . The behavior of the antenna at different positions along the feed line is studied and optimized. Multiple resonances with the same polarization and broad radioticn patterns suggest the suitability of the antenna for multiband wireless application

T-strip-fed High-Permittivity Rectangular Dielectric Resonator Antenna for Broadband Applications

rectangular low-density, high-permittivity dielectric resona or antenna (DRA) excited by T-shaped microstrip feed offering a 2:1 VSWR bandwidth of -22% at 2.975 GHz is reported. The design methoaology and experimental results of the antenna are discussed. The excellent gain and radiation performance of the proposed antenna project: it as a potential candidate for telecommunication applications

Compact Wideband Antenna for 2.4 GHz WLAN Applications

A novel compact wideband antenna for wireless local area network (WLAN) applications in the 2.4 GHz band is presented. The proposed low profile antenna of dimensions 15 x 14.5 x 1.6 mm offers 18.6% bandwidth and an average gain of -5 dBi. The antenna can be excited directly using a 50 coaxial probe

Spectral and nonlinear optical characterization of ZnO nanocomposites

The spectral and nonlinear optical characteristics of nano ZnO and its composites are investigated. The fluorescence behaviour of nano colloids of ZnO has been studied as a function of the excitation wavelength and there is a red shift in emission peak with excitation wavelength. Apart from the observation of the reported ultra violet and green emissions, our results reveal that additional blue emissions at 420 nm and 490 nm are developed with increasing particle size. Systematic studies on nano ZnO have indicated the presence of luminescence due to excitonic emissions when excited with 255 nm as well as significant contribution from surface defect states when excited with 325 nm. In the weak confinement regime, the third-order optical susceptibility χ(3) increases with increasing particle size (R) and annealing temperature (T) and a R2 and T2.5 dependence of χ(3) is obtained for nano ZnO. ZnO nanocolloids exhibit induced absorption whereas the self assembled films of ZnO exhibit saturable absorption due to saturation of linear absorption of ZnO defect states and electronic effects. ZnO nanocomposites exhibit negative nonlinear index of refraction which can be attributed to two photon absorption followed by weak free carrier absorption. The increase of the third-order nonlinearity in the composites can be attributed to the enhancement of exciton oscillator strength. The nonlinear response of ZnO nanocomposites is wavelength dependent and switching from induced absorption to saturable absorption has been observed at resonant wavelengths. Such a change-over is related to the interplay of plasmon/exciton band bleach and optical limiting mechanisms. This study is important in identifying the spectral range and the composition over which the nonlinear material acts as an optical limiter. ZnO based nanocomposites are potential materials for enhanced and tunable light emission and for the development of nonlinear optical devices with a relatively small optical limiting threshold.

Excitation wavelength dependent fluorescence behaviour of nano colloids of ZnO

In this paper, the fluorescence behaviour of nano colloids of ZnO has been studied as a function of the excitation wavelength. We have found that excitation at the tail of the absorption band gives rise to an emission that shifts with the change of the excitation wavelength. The excitation wavelength dependent shift of the fluorescence maximum is measured to be between 60 and 100 nm. This kind of excitation wavelength dependent fluorescence behaviour, which may appear to be in violation of Kasha’s rule of excitation wavelength independence of the emission spectrum, has been observed for nano ZnO colloids prepared by two different chemical routes and different capping agents. It is shown that the existence of a distribution of energetically different molecules in the ground state coupled with a low rate of the excited state relaxation processes, namely, solvation and energy transfer, are responsible for the excitation wavelength dependent fluorescence behaviour of the systems.

Excitation wavelength dependent fluorescence behaviour of nano colloids of ZnO

In this paper, the fluorescence behaviour of nano colloids of ZnO has been studied as a function of the excitation wavelength. We have found that excitation at the tail of the absorption band gives rise to an emission that shifts with the change of the excitation wavelength. The excitation wavelength dependent shift of the fluorescence maximum is measured to be between 60 and 100 nm. This kind of excitation wavelength dependent fluorescence behaviour, which may appear to be in violation of Kasha’s rule of excitation wavelength independence of the emission spectrum, has been observed for nano ZnO colloids prepared by two different chemical routes and different capping agents. It is shown that the existence of a distribution of energetically different molecules in the ground state coupled with a low rate of the excited state relaxation processes, namely, solvation and energy transfer, are responsible for the excitation wavelength dependent fluorescence behaviour of the systems.

Visible luminescence mechanism in nano ZnO under weak confinement regime

We describe the structure of luminescence spectrum in the visible region in nano-ZnO in colloidal and thin film forms under weak confinement regime by modeling the transition from excited state energy levels of excitons to their ground state. Measurements on nanocrystallites indicate the presence of luminescence due to excitonic emissions when excited with 255 nm. The relevant energy levels showing the transitions corresponding to the observed peaks in the emission spectrum of ZnO of particle size 18 nm are identified.

Studies on the Synthesis and Transformations of a few Bicyclic and Dispiro Compounds

In this thesis, we report our endeavours in the synthesis of a few polycyclic compounds. We were interested in the synthesis of a few bicyclic compounds designed to undergo interesting photochemical transformations including tripletmediated di-π-methane rearrangement and/or competing singlet-mediated electrocyclic reactions. Our target molecules have "inbuilt" structural features which will potentially alter the photochemistry of the substrate under consideration.The present investigation was undertaken to test our hypothesis on selective intramolecular quenching of singlet or triplet excited states of molecules.We adopted Dies-Alder reaction for the synthesis of several of the bicyclic compounds we were interested in. Some of the precursor dienes synthesised by us are capable of undergoing intramolecular cycloaddition reactions as well. So, it was important to delineate the conditions and structural features that will enable a particular molecule to undergo intermolecular and intramolecular Dies-Alder reaction when treated with a suitable dienophile.Though, the main focus of this thesis is on the synthesis of bicyclic and tricyclic systems capable of undergoing di-π-methane rearrangement, in the last chapter of this thesis, we describe our findings on the synthesis of a few dispirocompounds. These systems were encountered as unexpected products in the attempted synthesis of novel dibenzoylalkene-type systems. Consequently, a brief survey on the synthesis and transformations of dibenzoylalkenes is also included as an integral part of this thesis.

Photothermal Investigations on Certain Plasma Polymerized Thin Films and Near IR Overtone Studies of Some Organic Molecules

Photothermal effect refers to heating of a sample due to the absorption of electromagnetic radiation. Photothermal (PT) heat generation which is an example of energy conversion has in general three kinds of applications. 1. PT material probing 2. PT material processing and 3. PT material destruction. The temperatures involved increases from 1-. 3. Of the above three, PT material probing is the most important in making significant contribution to the field of science and technology. Photothermal material characterization relies on high sensitivity detection techniques to monitor the effects caused by PT material heating of a sample. Photothermal method is a powerful high sensitivity non-contact tool used for non-destructive thermal characterization of materials. The high sensitivity of the photothermal methods has led to its application for analysis of low absorbance samples. Laser calorimetry, photothermal radiometry, pyroelectric technique, photoacoustic technique, photothermal beam deflection technique, etc. come under the broad class ofphotothermal techniques. However the choice of a suitable technique depends upon the nature of the sample, purpose of measurement, nature of light source used, etc. The present investigations are done on polymer thin films employing photothermal beam deflection technique, for the successful determination of their thermal diffusivity. Here the sample is excited by a He-Ne laser (A = 6328...\ ) which acts as the pump beam. Due to the refractive index gradient established in the sample surface and in the adjacent coupling medium, another optical beam called probe beam (diode laser, A= 6500A ) when passed through this region experiences a deflection and is detected using a position sensitive detector and its output is fed to a lock-in amplifier from which the amplitude and phase of the deflection can be directly obtained. The amplitude and phase of the signal is suitably analysed for determining the thermal diffusivity.The production of polymer thin film samples has gained considerable attention for the past few years. Plasma polymerization is an inexpensive tool for fabricating organic thin films. It refers to formation of polymeric materials under the influence of plasma, which is generated by some kind of electric discharge. Here plasma of the monomer vapour is generated by employing radio frequency (MHz) techniques. Plasma polymerization technique results in homogeneous, highly adhesive, thermally stable, pinhole free, dielectric, highly branched and cross-linked polymer films. The possible linkage in the formation of the polymers is suggested by comparing the FTIR spectra of the monomer and the polymer.Near IR overtone investigations on some organic molecules using local mode model are also done. Higher vibrational overtones often provide spectral simplification and greater resolution of peaks corresponding to nonequivalent X-H bonds where X is typically C, N or O. Vibrational overtone spectroscopy of molecules containing X-H oscillators is now a well established tool for molecular investigations. Conformational and steric differences between bonds and structural inequivalence ofCH bonds (methyl, aryl, acetylenic, etc.) are resolvable in the higher overtone spectra. The local mode model in which the X-H oscillators are considered to be loosely coupled anharmonic oscillators has been widely used for the interpretation of overtone spectra. If we are exciting a single local oscillator from the vibrational ground state to the vibrational state v, then the transition energy of the local mode overtone is given by .:lE a......v = A v + B v2 • A plot of .:lE / v versus v will yield A, the local mode frequency as the intercept and B, the local mode diagonal anharmonicity as the slope. Here A - B gives the mechanical frequency XI of the oscillator and B = X2 is the anharmonicity of the bond. The local mode parameters XI and X2 vary for non-equivalent X-H bonds and are sensitive to the inter and intra molecular environment of the X-H oscillator.

Investigations on Photoconductivity and Electrical Switiching in Selected Chalcogenide Glasses

In this thesis, we present the results of our investigations on the photoconducting and electrical switching properties of selected chalcogenide glass systems. We have used XRD and X-ray photoelectron spectroscopy (XPS) analysis for confinuing the amorphous nature of these materials and for confirming their constituents respectively.Photoconductivity is the enhancement in electrical conductivity of materials brought about by the motion of charge carriers excited by absorbed radiation. The phenomenon involves absorption, photogeneration, recombination and transport processes and it gives good insight into the density of states in the energy gap of solids due to the presence of impurities and lattice defects. Photoconductivity measurements lead to the determination of such important parameters as quantum efficiency, photosensiti\'ity, spectral sensitivity and carrier lifetime. Extensive research work on photoconducting properties of amorphous semiconductors has resulted in the development of a variety of very sensitive photodetectors. Photoconductors are finding newer and newer uses eyery day. CdS, CdSe. Sb2S3, Se, ZnO etc, are typical photoconducting materials which are used in devices like vidicons, light amplifiers, xerography equipment etc.Electrical switching is another interesting and important property possessed by several Te based chalcogenides. Switching is the rapid and reversible transition between a highly resistive OFF state, driven by an external electric field and characterized by a threshold voltage, and a low resistivity ON state, Switching can be either threshold type or memory type. The phenomenon of switching could find applications in areas like infonnation storage, electrical power control etc. Investigations on electrical switching in chalcogenide glasses help in understanding the mechanism of switching which is necessary to select and modify materials for specific switching applications.Analysis of XRD pattern gives no further infonuation about amorphous materials than revealing their disordered structure whereas x-ray photoelectron spectroscopy,XPS) provides information about the different constituents present in the material. Also it gives binding energies (b.e.) of an element in different compounds and hence b.e. shift from the elemental form.Our investigations have been concentrated on the bulk glasses, Ge-In-Se, Ge-Bi-Se and As-Sb-Se for photoconductivity measurements and In-Te for electrical switching. The photoconducting properties of Ge-Sb-Se thin films prepared by sputtering technique have also been studied. The bulk glasses for the present investigations are prepared by the melt quenching technique and are annealed for half an hour at temperatures just below their respective glass transition temperatures. The dependence of photoconducting propenies on composition and temperature are investigated in each system. The electrical switching characteristics of In-Te system are also studied with different compositions and by varying the temperature.