Properties of high k gate dielectric gadolinium oxide deposited on Si(100) by dual ion beam deposition (DIBD)

Gadolinium oxide thin films have been prepared on silicon (100) substrates with a low-energy dual ion-beam epitaxial technique. Substrate temperature was an important factor to affect the crystal structures and textures in an ion energy range of 100-500 eV. The films had a monoclinic Gd2O3 structure with preferred orientation ((4) over bar 02) at low substrate temperatures. When the substrate temperature was increased, the orientation turned to (202), and finally, the cubic structure appeared at the substrate temperature of 700 degreesC, which disagreed with the previous report because of the ion energy. The AES studies found that Gadolinium oxide shared Gd2O3 structures, although there were a lot of oxygen deficiencies in the films, and the XPS results confirmed this. AFM was also used to investigate the surface images of the samples. Finally, the electrical properties were presented. (C) 2004 Elsevier B.V. All rights reserved.

Effect of phase-transformation on mechanical-behavior of dual-phase steel plate

The mechanical behavior of dual phase steel plates is affected by internal stresses created during martensite transformation. Analytical modelling of this effect is made by considering a unit cell made of martensite inclusion in a ferrite matrix. A large strain finite element analysis is then performed to obtain the plane stress deformation state. Displayed numerically are the development of the plastic zone and distribution of local state of stress and strain. Studied also are the shape configuration of the martensite (hard-phase) that influences the interfacial condition as related to stress transmission and damage. Internal stresses are found to enhance the global flow stress after yield initiation in the ferrite matrix. Good agreement is obtained between the analytical results and experimental observations.