905 resultados para Dielectric spectroscopy


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Nanosized ZnFe2O4 particles containing traces of a-Fe2O3 by intent were produced by low temperature chemical coprecipitation methods. These particles were subjected to high-energy ball milling. These were then characterised using X-ray diffraction, magnetisation and dielectric studies. The effect of milling on zinc ferrite particles have been studied with a view to ascertaining the anomalous behaviour of these materials in the nanoregime. X-ray diffraction and magnetisation studies carried out show that these particles are associated with strains and it is the surface effects that contribute to the magnetisation. Hematite percentage, probably due to decomposition of zinc ferrite, increases with milling. Dielectric behaviour of these particles is due to interfacial polarisation as proposed by Koops. Also the defects caused by the milling produce traps in the surface layer contributes to dielectric permittivity via spin polarised electron tunnelling between grains. The ionic mechanism is enhanced in dielectrics with the rise in temperature which results in the increase of dielectric permittivity with temperature.

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The author presents the development of a new dielectric resonator antenna(DRA) suitable for wideband wireless communication applications.The design comprises of a simple cylindrical dielectric resonator (DR) and a microstrip feed, in a low radiation-Q structure,enabling wide impedance bandwidth.The radiation pattern is conical shaped,resulted from thew low-Q structure.Dielectric constant of the DR,its dimensions and topological parameters of the feed line are the major design parameters of the antenna.By proper selection of these parameters,the DRA can be operated over a wideband width covering multiple wireless applications.The antenna is simulated using Ansoft HFSS TM and measured using HP 8510C vector network analyser.Some of the measured results are confirmed by using the Finite Difference Time Domain(FDTD) technique implemented in MATLAB.

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The radiation characteristics of a new type of hollow dielectric H-plane sectoral horn antenna are presented. Metallic strips of optimum length are loaded on the H-walls of the sectoral horns. The effects of strip loading for producing square patterns in the H plane are discussed.

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In the medical field, microwaves play a larger role for treatment than diagnosis. For the detection of diseases by microwave methods, it is essential to know the dielectric properties of biological materials. For the present study, a cavity perturbation technique was employed to determine the dielectric properties of these materials. Rectangular cavity resonators were used to measure the complex permittivity of human bile, bile stones, gastric juice and saliva. The measurements were carried out in the S and J bands. It is observed that normal and infected bile have different dielectric constant and loss tangent. Dielectric constant of infected bile and gastric juice varies from patient to patient. Detection and extraction of bile stone with possible method of treatment is also discussed.

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Ionic polymers (ionomers) with interesting characteristics are emerging as important commercial polymers. Ionomers have the unique ability to behave as cross-linked materials at ambient temperatures and to melt and flow at elevated temperatures like thermoplastics. The complex permittivity and conductivity of a class of ionomers at microwave frequencies are determined using the cavity perturbation technique and the results are presented.

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Present work deals with the Preparation and characterization of high-k aluminum oxide thin films by atomic layer deposition for gate dielectric applications.The ever-increasing demand for functionality and speed for semiconductor applications requires enhanced performance, which is achieved by the continuous miniaturization of CMOS dimensions. Because of this miniaturization, several parameters, such as the dielectric thickness, come within reach of their physical limit. As the required oxide thickness approaches the sub- l nm range, SiO 2 become unsuitable as a gate dielectric because its limited physical thickness results in excessive leakage current through the gate stack, affecting the long-term reliability of the device. This leakage issue is solved in the 45 mn technology node by the integration of high-k based gate dielectrics, as their higher k-value allows a physically thicker layer while targeting the same capacitance and Equivalent Oxide Thickness (EOT). Moreover, Intel announced that Atomic Layer Deposition (ALD) would be applied to grow these materials on the Si substrate. ALD is based on the sequential use of self-limiting surface reactions of a metallic and oxidizing precursor. This self-limiting feature allows control of material growth and properties at the atomic level, which makes ALD well-suited for the deposition of highly uniform and conformal layers in CMOS devices, even if these have challenging 3D topologies with high aspect-ratios. ALD has currently acquired the status of state-of-the-art and most preferred deposition technique, for producing nano layers of various materials of technological importance. This technique can be adapted to different situations where precision in thickness and perfection in structures are required, especially in the microelectronic scenario.

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We have employed time-dependent local-spin-density theory to analyze the far-infrared transmission spectrum of InAs self-assembled nanoscopic rings recently reported [A. Lorke et al., Phys. Rev. Lett. (to be published)]. The overall agreement between theory and experiment is fairly good, which on the one hand confirms that the experimental peaks indeed reflect the ringlike structure of the sample, and on the other hand, asseses the suitability of the theoretical method to describe such nanostructures. The addition energies of one- and two-electron rings are also reported and compared with the corresponding capacitance spectra

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Novel thermo-reversible zinc sulphonated ionomers based on styrene butadiene rubber (SBR), and high styrene rubber (HSH) were synthesized by sulphonation followed by neutralization with zinc. The sulphonate content of the ionomer was estimated by using x-ray fluorescence spectroscopy. Presence of sulphonate groups has been confirmed by FTIR and FTNMR spectra. The TGA results show improvement in the thermo~oxidative stability of the modified rubber. Both DSC and DMTA studies show that the incorporation of the ionic groups affect the glass rubber transition of the base polymer. lntroduction ol ionic functionality in to the base material improved the physical properties. Retention of the improved physical properties of the novel ionomers even after three repeated cycles of mixing and molding may be considered as the evidence for the reprocessability of the ionomer. Effect of particulate fillers (HAF black, silica and zinc stearate) on the properties of the zinc sulphonated styrene butadiene rubber ionomer has been evaluated. Incorporation of tillers results in improvement in mechanical properties. Zinc stearate plays the dual role of reinforcement and plasticization. The evaluation of dielectric properties of zinc sulphonated styrene butadiene rubber iorpmers at microwave frequencies reveal that the materials show conductivity at semiconductor level. The real and imaginary parts of the complex permittivity increases with increase in ionic functionality. Use of the 38.5 ZnS-SBR ionomer as a compatibiliser for obtaining the technologically compatible blends from the immiscible SBR/NBR system has been discussed.

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A brief account of the several methods used for the production of thin films is presented in this Chapter. The discussions stress on the important methods used for the fabrication of a-si:H thin films. This review' also reveals ‘that almost all the general methods, like vacuum evaporation, sputtering, glow discharge and even chemical methods are currently employed for the production of a-Si:H thin films. Each method has its own advantages and disadvantages. However, certain methods are generally preferred. Subsequently a detailed account of the method used here for the preparation of amorphous silicon thin films and their hydrogenation is presented. The metal chamber used for the electrical and dielectric measurements is also described. A brief mention is made-on the electrode structure, film area and film geometry.

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The role of effective mass and dielectric mismatches on chemical potentials and addition energies of many-electron multishell quantum dots (QDs) is explored within the framework of a recent extension of the spin density functional theory. It is shown that although the gross electronic density is located in the wells of these multishell QDs, taking position-dependent effective mass and dielectric constant into account can lead to the appearance of relevant differences in chemical potential and addition energies as compared to standard calculations in which the effective mass and the dielectric constant of the well is assumed for the whole multishell structure.

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This thesis mainly deals with the preparation and studies on magnetic composites based on spinel ferrites prepared both chemically and mechanically. Rubber ferrite composites (RFC) are chosen because of their mouldability and flexibility and the ease with which the dielectric and magnetic properties can be manipulated to make them as useful devices. Natural rubber is chosen as the Matrix because of its local availability and possible value addition. Moreover, NR represents a typical unsaturated nonpolar matrix. The work can be thought of as two parts. Part l concentrates on the preparation and characterization of nanocomposites based on y-Fe203. Part 2 deals with the preparation and characterization of RFCs containing Nickel zinc ferrit In the present study magnetic nanocomposites have been prepared by ionexchange method and the preparation conditions have been optimized. The insitu incorporation of the magnetic component is carried out chemically. This method is selected as it is the easiest and simplest method for preparation of nanocomposite. Nanocomposite samples thus prepared were studied using VSM, Mossbauer spectroscopy, Iron content estimation, and ESR spectroscopy. For the preparation of RFCs, the filler material namely nickel zinc ferrite having the general formula Ni)_xZnxFez04, where x varies from 0 to 1 in steps of 0.2 have been prepared by the conventional ceramic techniques. The system of Nil_xZn"Fe204 is chosen because of their excellent high frequency characteristics. After characterization they are incorporated into the polymer matrix of natural rubber by mechanical method. The incorporation is done according to a specific recipe and for various Loadings of magnetic fillers and also for all compositions. The cure characteristics, magnetic properties and dielectric properties of these composites are evaluated. The ac electrical conductivity of both ceramic nickel zinc ferrites and rubber ferrite composites are also calculated using a simple relation. The results are correlated.

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This thesis is divided into two parts. The first part deals with some studies in molecular mechanics Using spectroscopic data and has four chapters in it. Certain approximation methods for the evaluation of molecular force fields are herein developed The second part, which consists of the last two chaptcrs, deals with infrared spectral studies of ternary liquid systems and a polymer film prepared by glow discharge method.

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Near-infrared spectroscopy can be a workhorse technique for materials analysis in industries such as agriculture, pharmaceuticals, chemicals and polymers. A near-infrared spectrum represents combination bands and overtone bands that are harmonics of absorption frequencies in the mid-infrared. Near-infrared absorption includes a combination-band region immediately adjacent to the mid-infrared and three overtone regions. All four near-infrared regions contain "echoes" of the fundamental mid-infrared absorptions. For example, vibrations in the mid-infrared due to the C-H stretches will produce four distinct bands in each of the overtone and combination regions. As the bands become more removed from the fundamental frequencies they become more widely separated from their neighbors, more broadened and are dramatically reduced in intensity. Because near-infrared bands are much less intense, more of the sample can be used to produce a spectra and with near-infrared, sample preparation activities are greatly reduced or eliminated so more of the sample can be utilized. In addition, long path lengths and the ability to sample through glass in the near-infrared allows samples to be measured in common media such as culture tubes, cuvettes and reaction bottles. This is unlike mid-infrared where very small amounts of a sample produce a strong spectrum; thus sample preparation techniques must be employed to limit the amount of the sample that interacts with the beam. In the present work we describe the successful the fabrication and calibration of a linear high resolution linear spectrometer using tunable diode laser and a 36 m path length cell and meuurement of a highly resolved structure of OH group in methanol in the transition region A v =3. We then analyse the NIR spectrum of certain aromatic molecules and study the substituent effects using local mode theory

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The dielectric and elastic properties are of considerable significance to the science and technology of matter in the solid state. The study of these properties give information about the magnitude of the forces and nature of the bonding between the atoms. Our aim has been to investigate systematically the effect of doping of an appropriate element on the elastic and dielectric properties of selected dielectric ceramics and oxide glasses. These materials have got wide technological applications due to their interesting electrical, optical, thermal and elastic behaviour. Ultrasound propagation and capacitance measurement techniques have been employed for the systematic investigation of the elastic and dielectric properties of selected number of these materials. Details of the work done and results obtained are presented in this thesis.

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High-sensitivity electron paramagnetic resonance experiments have been carried out in fresh and stressed Mn12 acetate single crystals for frequencies ranging from 40 GHz up to 110 GHz. The high number of crystal dislocations formed in the stressing process introduces a E(Sx2-Sy2) transverse anisotropy term in the spin Hamiltonian. From the behavior of the resonant absorptions on the applied transverse magnetic field we have obtained an average value for E=22 mK, corresponding to a concentration of dislocations per unit cell of c=10-3.