DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

Growth and photoluminescence of InAlGaN films

Two quaternary InAlGaN films were grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire (0001) substrates with and without high-temperature GaN interlayer, respectively. The structural and optical properties of the quaternary films were investigated by high-resolution X-ray diffraction (HRXRD), high-resolution electron microscopy (HREM), temperature-dependent photoluminescence (PL) spectroscopy and time-resolved photoluminescence (TRPL) spectroscopy. According to the HRXRD and PL results, it is demonstrated that two samples have the same crystal quality. The TRPL signals of both samples were fitted well as a stretched exponential decay from 14 K to 250 K, indicating significant disorder in the materials, which is attributed to recombination of excitons localized in disorder quantum nanostructures such as quantum dots or quantum disks originating from indium (In) clusters or In composition fluctuation. The cross-section HREM measurement further proves that there exist disorder quantum nanostructures in the quaternary. By investigating the temperature dependence of the dispersive exponent beta, it is shown that the stretched exponential decays of the two samples originate from different mechanisms. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental Study on the Subthreshold Swing of Silicon Nanowire Transistors

SOI based wrap-gate silicon nanowire FETs are fabricated through electron beam lithography and wet etching. Dry thermal oxidation is used to further reduce the patterned fins cross section and transfer them into nanowires. Silicon nanowire FETs with different nanowire widths varying from 60 nm to 200 nm are fabricated and the number of the nanowires contained in a channel is also varied. The on-current (I-ON) and off-current (I-OFF) of the fabricated silicon nanowire FET are 0.59 mu A and 0.19 nA respectively. The subthreshold swing (SS) and the drain induced barrier lowering are 580 mV/dec and 149 mVN respectively due to the 30 nm thick gate oxide and 1015 cm(-3) lightly doped silicon nanowire channel. The nanowire width dependence of SS is shown and attributed to the fact that the side-gate parts of a wrap gate play a more effectual role as the nanowires in a channel get narrower. It seems the nanowire number in a channel has no effect on SS because the side-gate parts fill in the space between two adjacent nanowires.

Measurement of 16O5+ Induced L X-Ray Production Cross Sections for Gold

The characteristic Ll, Lα, Lβ and Lγx-rays of Au and energy shifts produced by 20–50MeV 16O5+ beams on a thick Au ilm are measured with a Si (Li) detector. Cross-section ratios of σ(Ll)/σ(Lα), σ(Lβ)/σ(Lα) andσ(Lγ)/σ(Lα) versus O5+ energy show that consistent calculations yield considerably better agreements. Energy shifts Ll, Lα, Lβ and Lγ x-rays of Au target increase with more incidence energy. The main application for these measurements is multi-element trace analysis through particle induced x-ray emission.

Microscopic Three-Body Force Effect on Nucleon-Nucleon Cross Sections in Symmetric Nuclear Matter

We provide a microscopic calculation of neutron-proton and proton-proton cross sections in symmetric nuclear matter at various densities, using the Brueckner-Hartee-Fock approximation scheme with the Argonne V-14 potential including the contribution of microscopic three-body force. We investigate separately the effects of three-body force on the effective mass and on the scattering amplitude. In the present calculation, the rearrangement contribution of three-body force is considered, which will reduce the neutron and proton effective mass, and depress the amplitude of cross section. The effect of three body force is shown to be repulsive, especially in high densities and large momenta, which will suppress the cross section markedly.

Photoionization of 1s electron and corresponding shake-up process in ground and excited lithium atoms

The cross sections of the 18 electron photoionization and corresponding shake-up processes for Li atoms in the ground state 1s(2)2s and excited states 1s(2)2p, 1s(2)3p, 1s(2)3p and 1s(2)3d are calculated using the multi-configuration Dirac-Fock method. The latest experimental photoelectron spectrum at hv = 100 eV [Cubaynes D et al. Phys. Rev. Lett. 99 (2007) 213004] has been reproduced by the present theoretical investigation excellently. The relative intensity of the shake-up satellites shows that the effects of correlation and relaxation become more important for the higher excited states of the lithium atom, which are explained very well by the spatial overlap of the initial and final state wavefunctions. In addition, strong dependence of the cross section on the atomic orbitals of the valence electrons are found, especially near the threshold.

Cross-correlation of excitation functions for different fragments and different scattering angles in Al-27(F-19, x)y reactions

Excitation functions have been measured for different projectile-like fragments produced in Al-27(F-19,x)y reactions at incident energies from 110.25 to 118.75 MeV in 250 keV steps. Strong cross section fluctuations of the excitation functions are observed. The cross- correlation coefficients of the excitation functions for different atomic number Z and for different scattering angle theta(cm) have been deduced. These coefficients are much larger than the statistical theoretical calculated ones. This indicates that there are strong correlations between different exit channels in the dissipative heavy ion Collision of Al-27(F-19,x)y.

Exotic behavior of elastic scattering differential cross-sections of weakly bound nucleus F-17 at small angles

The differential cross-sections for elastic scattering of F-17 and O-17 on Pb-208 have been measured at Radioactive Ion Beam Line at Lanzhou (RIBLL). The variation of the logarithms of differential cross-sections with the square of scattering angles shows clearly that there exists a turning point in the range of small scattering angles (6 degrees-20 degrees) for F-17 having exotic structure, while no turning point was observed in the O-17 elastic scattering. The experimental results have been compared with previous data. Systematical analysis on the available data seems to conclude that there is an exotic behavior of elastic scattering differential cross-sections of weakly bound nuclei with halo or skin structure as compared with that of the ordinary nuclei near stable line. Therefore the fact that the turning point of the logarithms of differential cross-sections appears at small angle for weakly bound nuclei could be used as a new probe to investigate the halo and skin phenomenon.

Double neutron/proton ratio of nucleon emissions in isotopic reaction systems as a robust probe of nuclear symmetry energy

The double neutron/proton ratio of nucleon emissions taken from two reaction systems using four isotopes of the same element, namely, the neutron/proton ratio in the neutron-rich system over that in the more symmetric system, has the advantage of reducing systematically the influence of the Coulomb force and the normally poor efficiencies of detecting low energy neutrons. The double ratio thus suffers less systematic errors. Within the IBUU04 transport model the double neutron/proton ratio is shown to have about the same sensitivity to the density dependence of nuclear symmetry energy as the single neutron/proton ratio in the neutron-rich system involved. The double neutron/proton ratio is therefore more useful for further constraining the symmetry energy of neutron-rich matter.

Non-reproducibility of the cross sections of the products induced from dissipative reaction of F-19+Al-27

The differential cross sections of the dissipative products B, Q N, O, F, Ne, Na and Mg induced from the reactions of F-19+Al-27 at two incident energies have been measured at the HI-13 tandem accelerator, Beijing. In the case of a fixed beam incident energy 114MeV or 118.75MeV respectively, identical reaction system and the same detection system, 20 target points in steps of 2mm on(.)a 10mmx50mm rectangular Al foil have been bombarded. The experimental results indicate that the probability distribution of the cross sections is much wider than a standard Gaussian distribution. This non-reproducibility of the cross sections can't be interpreted by the statistical property of a finite count rate.