PZT FOR MEASURING ENERGY FLUENCE RATE of X-RAY USED IN SUPERFICIAL CANCER THERAPY

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Effect of combined bending strain and thermal cycling on the voltage-current characteristic curves of Bi-2223 tapes

High critical temperature superconductors are evolving from a scientific research subject into large-scale application devices. In order to meet this development demand they must withstand high current capacity under mechanical loads arising from thermal contraction during cooling from room temperature down to operating temperature (usually 77 K) and due to the electromagnetic forces generated by the current and the induced magnetic field. Among the HTS materials, the Bi2Sr2Ca2Cu3Ox, compound imbedded in an Ag/AgMg sheath has shown the best results in terms of critical current at 77 K and tolerance against mechanical strain. Aiming to evaluate the influence of thermal stress induced by a number of thermal shock cycles we have evaluated the V-I characteristic curves of samples mounted onto semicircular holders with different curvature radius (9.75 to 44.5 mm). The most deformed sample (epsilon = 1.08%) showed the largest reduction of critical current (40%) compared to the undeformed sample and the highest sensitivity to thermal stress (I-c/I-c0 = 0.5). The V-I characteristic curves were also fitted by a potential curve displaying n-exponents varying from 20 down to 10 between the initial and last thermal shock cycle.

Characterization of ZnO-degraded varistors used in high-tension devices

The effects of the degradation process on the structural, microstructural and electrical properties of ZnO-based varistors were analyzed. Rietveld refinement showed that the BiO2-x phase is affected by the degradation process. Besides the changes in the spinel phase, the degradation process also affects the lattice microstrain in the ZnO phase. Scanning electron microscopy analysis showed electrode-melting failure, while wavelength dispersive X-ray spectroscopy qualitative analysis showed deficiency of oxygen species at the grain boundaries in the degraded samples. Atomic force microscopy using electrostatic mode force illustrated a decrease in the charge density at the grain boundaries of the degraded sample. Transmission electron microscopy showed submicrometric spinel grains embedded in a ZnO matrix, but their average grain size is smaller in the degraded sample than in the standard one. Long pulses appeared to be more harmful for the varistors' properties than short ones, causing higher leakage current values. The electrical characteristics of the degraded sample are partially restored after heat treatment in an oxygen-rich atmosphere. (C) 2006 Elsevier Ltd. All rights reserved.

High Curie point CaBi2Nb2O9 thin films: A potential candidate for lead-free thin-film piezoelectrics

CaBi2Nb2O9 (CBNO) thin films deposited on platinum coated silicon substrates by the polymeric precursor method exhibited good structural, dielectric, and piezoelectric characteristics. Capacitance-voltage measurements indicated good ferroelectric polarization switching characteristics. Remanent polarization and drive voltage values were 4.2 mu C/cm(2) and 1.7 V for a maximum applied voltage of 10 V. The film has a piezoelectric coefficient d(33) equal to 60 pm/V, current density of 0.7 mu A/cm(2), and Curie temperature of 940 degrees C. The polar-axis-oriented CBNO is a promising candidate for use in lead-free high Curie point in ferroelectric and piezoelectric devices. (c) 2006 American Institute of Physics.

A 12 kW three-phase low THD rectifier with high-frequency isolation and regulated DC output

A robust 12 kW rectifier with low THD in the line currents, based on an 18-pulse transformer arrangement with reduced kVA capacities followed by a high-frequency isolation stage is presented in this work. Three full-bridge (buck-based) converters are used to allow galvanic isolation and to balance the dc-link currents, without current sensing or current controller. The topology provides a regulated dc output with a very simple and well-known control strategy and natural three-phase power factor correction. The phase-shift PWM technique, with zero-voltage switching is used for the high-frequency dc-dc stage. Analytical results from Fourier analysis of winding currents and the vector diagram of winding voltages are presented. Experimental results from a 12 kW prototype are shown in the paper to verify the efficiency, robustness and simplicity of the command circuitry to the proposed concept.

Plutonism in three orogenic pulses, Eastern Blue Ridge Province, southern Appalachians

The Eastern Blue Ridge Province of the southern Appalachians contains, in part, remnants of an Ordovician accretionary wedge complex formed during subduction of an oceanic tract before mid-Ordovician accretion with Laurentia. The Eastern Blue Ridge Province consists of metapelite and amphibolite intruded by low-K plutons, high-temperature (T > 750 degrees C) Ordovician eclogite, and other high-pressure metamafic and meta-ultramatic rocks. Felsic plutons in the Eastern Blue Ridge Province are important time markers for regional-scale tectonics, deformation, and metamorphism. Plutons were thought to be related to either Taconian (Ordovician) or Acadian (Devonian-Silurian) tectonothermal events.We dated five plutonic or metaplutonic rocks to constrain pluton crystallization ages better and thus the timing of tectonism. The Persimmon Creek gneiss yielded a protolith crystallization age of 455.7 +/- 2.1 Ma, Chalk Mountain 377.7 +/- 2.5 Ma, Mt. Airy 334 +/- 3 Ma, Stone Mountain 335.6 +/- 1.0 Ma, and Rabun 335.1 +/- 2.8 Ma. The latter four plutons were thought to be part of the Acadian Spruce Pine Suite, but instead our new ages indicate that Alleghanian (Carboniferous-Permian) plutonism is widespread and voluminous in the Eastern Blue Ridge Province. The Chattahoochee fault, which was considered an Acadian structure, cuts the Rabun pluton and thus must have been active during the Alleghanian orogeny. The new ages indicate that Persimmon Creek crystallized less than 3 m.y. after zircon crystallization in Eastern Blue Ridge eclogite and is nearly synchronous with nearby high-grade metamorphism and migmatization. The three phases of plutonism in the Eastern Blue Ridge Province correspond with established metamorphic ages for each of the three major orogenic pulses along the western flank of the southern Appalachians.

A CMOS/SOI single-input PWM discriminator for low-voltage body-implanted applications

A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM) signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a novel double-integration concept and does not require low-pass filtering. Non-overlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 mum single-metal thin-film CMOS/SOI fabrication process and has an effective area of 2 mm(2). Measured resolution of encoding parameter a is better than 10% at 6 MHz and V-DD = 3.3 V. Idle-mode consumption is 340 LW. Pulses of frequencies up to 15 MHz and alpha = 10% can be discriminated for 2.3 V less than or equal to V-DD less than or equal to 3.3 V. Such an excellent immunity to V-DD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.

The failure analyses on ZnO varistors used in high tension devices

The main purpose of this work is to evaluate the failure caused by electrical discharge on commercial ZnO varistor doped with oxide of Bi, Sb, Si, Cr, Co utilized in electric transmission systems. In order to observe the effect of electrical discharge over the microstructure and electrical properties of the varistors, two kinds of pulses were applied: long pulse (2000 ms) and short pulse (8/20 mu s). In both cases, a decrease in grain size and increase in micropores and leakage current were observed. The degraded samples present oxygen defficiency mainly in the grain boundary and phase tranformation from the bismuth oxide phase. (c) 2005 Springer Science+ Business Media, Inc.

SnO2, ZnO and related polycrystalline compound semiconductors: An overview and review on the voltage-dependent resistance (non-ohmic) feature

The present review describes mainly the history of SnO2-based voltage-dependent resistors, discusses the main characteristics of these polycrystalline semiconductor systems and includes a direct comparison with traditional ZnO-based voltage-dependent resistor systems to establish the differences and similarities, giving details of the basic physical principles involved with the non-ohmic properties in both polycrystalline systems. As an overview, the text also undertakes the main difficulties involved in processing SnO2- and ZnO-based non-ohmic systems, with an evaluation of the contribution of the dopants to the electronic properties and to the final microstructure and consequently to the system's non-ohmic behavior. However, since there are at least two review texts regarding ZnO-based systems [Levinson, L. M., and Philipp, H. R. Ceramic Bulletin 1985;64:639; Clarke, D. R. Journal of American Ceramic Society 1999;82:485], the main focus of the present text is dedicated to the SnO2-based varistor systems, although the basic physical principles described in the text are universally useful in the context of dense polycrystalline devices. However, the readers must be careful of how the microstructure heterogeneity and grain-boundary chemistry are capable to interfere in the global electrical response for particular systems. New perspectives for applications, commercialization and degradation studies involving SnO2-based polycrystalline non-ohmic systems are also outlined, including recent technological developments. Finally, at the end of this review a brief section is particularly dedicated to the presentation and discussions about others emerging non-ohmic polycrystalline ceramic devices (particularly based on perovskite ceramics) which must be deeply studied in the years to come, specially because some of these systems present combined high dielectric and non-ohmic properties. From both scientific and technological point of view these perovskite systems are quite interesting. (c) 2007 Elsevier Ltd. All rights reserved.

Analysis and design of constant-frequency peak-current-controlled high-power-factor boost rectifier with slope compensation

This paper presents the analysis and the design of a peak-current-controlled high-power-factor boost rectifier, with slope compensation, operating at constant frequency. The input current shaping is achieved, with continuous inductor current mode, with no multiplier to generate a current reference. The resulting overall circuitry is very simple, in comparison with the average-current-controlled boost rectifier. Experimental results are presented, taken from a laboratory prototype rated at 370 W and operating at 67 kHz. The measured power factor was 0.99, with a input current THD equal to 5.6%, for an input voltage THD equal to 2.26%.

On designing linearly-tunable ultra-low voltage CMOS gm-C filters

A linearly-tunable ULV transconductor featuring excellent stability of the processed signal common-mode voltage upon tuning, critical for very-low voltage applications, is presented. Its employment to the synthesis of CMOS gm-C high-frequency and voiceband filters is discussed. SPICE data describe the filter characteristics. For a 1.3 V-supply, their nominal passband frequencies are 1.0 MHz and 3.78 KHz, respectively, with tuning rates of 12.52 KHz/mV and 0.16 KHz/m V, input-referred noise spectral density of 1.3 μV/Hz1/2 and 5.0μV/Hz1/2 and standby consumption of 0.87 mW and 11.8 μW. Large-signal distortion given by THD = 1% corresponds to a differential output-swing of 360 mVpp and 480 mVpp, respectively. Common-mode voltage deviation is less than 4 mV over tuning interval.

A high speed 3.3V current mode CMOS comparators with 10-b resolution

This paper presents a high speed current mode CMOS comparator. The comparator was optimized for allows wide range input current 1mA, ±0.5uA resolution and has fast response. This circuit was implemented with 0.8μm CMOS n-well process with area of 120μm × 105μm and operates with 3.3V(±1.65V).

Novel high-power-factor isolated electronic ballast for multiple tubular fluorescent lamps

This paper presents a novel isolated electronic ballast for multiple fluorescent lamps, featuring high power-factor, and high efficiency. Two stages compose this new electronic ballast, namely, a new voltage step-down isolated Sepic rectifier, and a classical resonant Half-Bridge inverter. The new isolated Sepic rectifier is obtained from a Zero-Current-Switching (ZCS) Pulse-Width-Modulated (PWM) soft-commutation cell. The average-current control technique is used in this preregulator stage in order to provide low phase displacement and low Total-Harmonic-Distortion (THD) at input current, resulting in high power-factor, and attending properly IEC 61000-3-2 standards. The resonant Half-Bridge inverter performs Zero-Voltage-Switching (ZVS), providing conditions for the obtaining of overall high efficiency. It is developed a design example for the new isolated electronic ballast rated at 200W output power, 220Vrms input voltage, 115Vdc dc link voltage, with rectifier and inverter stages operating at 50kHz. Finally, experimental results are presented in order to verify the developed analysis. The THD at input current is equal to 5.25%, for an input voltage THD equal to 1.63%, and the measured overall efficiency is about 88.25%, at rated load.

A high efficiency HPF-ZCS-PWM Sepic for electronic ballast with multiple tubular fluorescent lamps

This paper presents a high efficiency Sepic rectifier for an electronic ballast application with multiple fluorescent lamps. The proposed Sepic rectifier is based on a Zero-Current-Switching (ZCS) Pulse-Width-Modulated (PWM) soft-commutation cell. The high power-factor of this structure is obtained using the instantaneous average-current control technique, in order to attend properly IEC61000-3-2 standards. The inverting stage of this new electronic ballast is a classical Zero-Voltage-Switching (ZVS) Half-Bridge inverter. A proper design methodology is developed for this new electronic ballast, and a design example is presented for an application with five fluorescent lamps 40W-T12 (200W output power), 220Vrms input voltage, 130Vdc dc link voltage, with rectifier and inverter stages operating at 50kHz. Experimental results are also presented. The THD at input current is equal to 6.41%, for an input voltage THD equal to 2.14%, and the measured overall efficiency is about 92.8%, at rated load.

An active leakage-injection scheme applied to low-voltage SRAMs

An active leakage-injection scheme (ALIS) for low-voltage (LV) high-density (HD) SRAMs is presented. By means of a feedback loop comprising a servo-amplifier and a common-drain MOSFET, a current matching the respective bit-line leakage is injected onto the line during precharge and sensing, preventing the respective capacitances from erroneous discharges. The technique is able to handle leakages up to hundreds of μA at high operating temperatures. Since no additional timing is required, read-out operations are performed at no speed penalty. A simplified 256×1bit array was designed in accordance with a 0.35 CMOS process and 1.2V-supply. A range of PSPICE simulation attests the efficacy of ALIS. With an extra power consumption of 242 μW, a 200 μA-leakage @125°C, corresponding to 13.6 times the cell current, is compensated.