Anomalous n-type electrical behaviour of Pd-contacted CNTFET fabricated on small-diameter nanotube.

A Pd-contacted dopant-free CNTFET with small-diameter (0.57 nm) carbon nanotube showing an anomalous n-type electrical characteristic is reported for the first time. This observed behaviour is attributed to a carbon nanotube work function higher than (or close to) palladium as well as a large hole-to-electron effective mass ratio of approximately 2.5 predicted by hybridization in small-diameter nanotubes. A variation of the conduction type with temperature is also observed and is attributed to an increase of the palladium work function and decrease of the CNT work function with increasing temperature.

Anomalous atmospheric circulation and large winter floods in six subregions of the southwestern United States

EXTRACT (SEE PDF FOR FULL ABSTRACT): We examined atmospheric circulation conditions conducive to occurrence of winter floods that exceed the 10-year peak discharge on rivers in six hydroclimatic subregions in Arizona, southern Utah, Nevada, and California. ... This relationship between flooding and broad-scale atmospheric patterns in the modern record will aid in paleoclimatic interpretations of paleoflood records over the last few thousand years.

Roadmapping in industrial companies: Experiences

From its origins in the US electronics sector in the 1970s, technology roadmapping has been adapted (and adopted) widely, for many different innovation, strategy and policy applications. Communication is commonly cited as one of the key benefi ts of roadmapping, particularly in terms of the process that brings different organizational perspectives together, with the roadmap providing a common visual 'language'. There is signifi cant demand for methods that are agile, in the sense of being rapid, flexible and effective to apply, focused on strategic decisions and actions. 'Fast-start' roadmapping workshop techniques enable key stakeholders to address strategic issues efficiently using the visual structure of roadmaps to capture, discuss, prioritize, explore and communicate. This paper presents the learning from a set of five diverse applications of the fast-start approach in the Basque Country, which demonstrate the agility of the technique.

Frontier experiences from industry-academia consortia

Technology roadmapping has been applied successfully in many industrial organizations. Designed to facilitate and communicate technology strategy and planning, roadmaps (or, as in Europe, route maps) can take a variety of specific forms, depending on the type (opportunities, capabilities, products, technologies, etc.) and particular company context. While roadmaps are generally manifest in a number of "program elements or levels" superimposed upon a timeline, experienced mappers often claim that it is "roadmapping" rather than "the roadmap" that generates the value. This special report focuses primarily on product and technology roadmaps. Following an introduction to the evolution, purpose and applications of corporate/industry roadmapping, four industry-developed articles examine roadmapping in Lucent Technologies, Rockwell Automation, the pharmaceutical/biotechnology industry, and UK-based Domino Printing Sciences.

Managing Information Risks in asset management - Experiences from an in-depth case study in the utility industry

Information is one of the most important resources in our globalized economy. The value of information often exceeds the value of physical assets. Information quality has, in many ways, an impact on asset management organisations and asset managers struggle to understand and to quantify it, which is a prerequisite for effective information quality improvement. Over the past few years, we have developed an innovative management concept that addresses these new asset management challenges: a process for Total Information Risk Management (TIRM), which has been already tested in a number of asset management industries. The TIRM process enables to manage information quality more effectively in asset management organisations as it focuses specifically on the risks that are imposed by information quality. In this paper, we show how we have applied the TIRM process in an in-depth study at a medium-sized European utility provider, the Manx Electricity Authority (MEA), at the Isle of Man.

Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures at room temperature

Under normal incidence of circularly polarized light at room temperature, a charge current with swirly distribution has been observed in the two-dimensional electron gas in Al0.25Ga0.75N/GaN heterostructures. We believe that this anomalous charge current is produced by a radial spin current via the reciprocal spin Hall effect. It suggests a new way to research the reciprocal spin Hall effect and spin current on the macroscopic scale and at room temperature.

Anomalous Rashba spin-orbit interaction in InAs/GaSb quantum wells

We theoretically investigate the Rashba spin-orbit interaction in InAs/GaSb quantum wells (QWs). We find that the Rashba spin-splitting (RSS) sensitively depends on the thickness of the InAs layer. The RSS exhibits nonlinear behavior for narrow InAs/GaSb QWs and the oscillating feature for wide InAs/GaSb QWs. The nonlinear and oscillating behaviors arise from the weakened and enhanced interband coupling. The RSS also show asymmetric features respect to the direction of the external electric field. (C) 2008 American Institute of Physics.

Anomalous-circular photogalvanic effect in a GaAs/AlGaAs two-dimensional electron gas

We have studied the circular photogalvanic effect (CPGE) in a GaAs/AlGaAs two-dimensional electron gas excited by near infrared light at room temperature. The anomalous CPGE observed under normal incidence indicates a swirling current which is realized by a radial spin current via the reciprocal spin-Hall effect. The anomalous CPGE exhibits a cubic cosine dependence on the incidence angle, which is discussed in line with the above interpretation.

An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors

The gain mechanism in GaN Schottky barrier ultraviolet photodetectors is investigated by focused light beam. When the incident light illuminates the central region of the Schottky contact electrode, the responsivity changes very little with the increase of reverse bias voltage. However, when the incident light illuminates the edge region of the electrode, the responsivity increases remarkably with the increase of reverse bias voltage, and the corresponding quantum efficiency could be even higher than 100%. It is proposed that the surface states near the edge of the electrode may lead to a reduction of effective Schottky barrier height and an enhancement of electron injection, resulting in the anomalous gain.