Effects of Cd2+ and Pb2+ on the substrate biofilms in the integrated vertical-flow constructed wetland

The effects of single Cd2+ and Pb2+, and combined Cd2+ and Pb2+ on dehydrogenase activity and polysaccharide content of the substrate biofilms in the integrated vertical-flow constructed wetland (IVCW) were studied. Dehydrogenase activities decreased linearly with the increasing concentrations of Cd2+ and Pb2+ at different times (6, 24, 72, and 120 h). The activities at both 6 and 24 h were significantly higher than that at 72 and 120 h in the case of single and combined treatments. The single Cd2+ and Pb2+ treatments significantly inhibited dehydrogenase activities at concentrations in excess of 20 mu mol/L Cd2+ and 80 mu mol/L Pb2+, respectively. The inhibitory effect of Cd2+ was much greater than that of Pb2+. At the same time, the combined treatment of Cd2+ and Pb2+ Significantly inhibited dehydrogenase activities at all five concentrations studied and the lowest combined concentration was 1.25 mu mol/L Cd2+ and 5 mu mol/L Pb2+. A synergistic effect of Cd2+ and Pb2+ was observed. On the other hand, polysaccharide contents varied unpredictably with the increasing concentrations of Cd2+ and Pb2+ and extended experimental time. There were no significant statistical differences within the range of concentration and time studied, whether singly or in combination. These results implied that the effects of heavy metals on biofilms should be a concern for the operation and maintenance of constructed wetlands.

Gene expression profiles in liver of zebrafish treated with microcystin-LR

Microcystin-LR (MC-LR) is the most frequently studied cyclic heptatoxin produced by cyanobacteria, which has tremendous negative impacts on fish, while its molecular mechanism behind remained unclear at present. Here, Affymetrix Zebrafish GeneChip was used to identify alterations in gene expression of zebrafish (Danio rerio) after MC-LR exposure. Among the 14,900 transcripts in the microarray, 273 genes were differentially expressed, in which 243 genes were elevated and 30 were decreased. According to GOstat analysis, MC-LR mainly influenced the cell cycle and mitogen-activated protein kinases (MAPK) signaling pathways. In addition, many immune-related genes were also influenced. These data suggest that MC-LR could promote tumorigenesis and cause immunotoxicity in fish. (C) 2008 Elsevier B.V. All rights reserved.

Influence of turbulence-chemistry interaction for n-heptane spray combustion under diesel engine conditions with emphasis on soot formation and oxidation

The influence of the turbulence-chemistry interaction (TCI) for n-heptane sprays under diesel engine conditions has been investigated by means of computational fluid dynamics (CFD) simulations. The conditional moment closure approach, which has been previously validated thoroughly for such flows, and the homogeneous reactor (i.e. no turbulent combustion model) approach have been compared, in view of the recent resurgence of the latter approaches for diesel engine CFD. Experimental data available from a constant-volume combustion chamber have been used for model validation purposes for a broad range of conditions including variations in ambient oxygen (8-21% by vol.), ambient temperature (900 and 1000 K) and ambient density (14.8 and 30 kg/m3). The results from both numerical approaches have been compared to the experimental values of ignition delay (ID), flame lift-off length (LOL), and soot volume fraction distributions. TCI was found to have a weak influence on ignition delay for the conditions simulated, attributed to the low values of the scalar dissipation relative to the critical value above which auto-ignition does not occur. In contrast, the flame LOL was considerably affected, in particular at low oxygen concentrations. Quasi-steady soot formation was similar; however, pronounced differences in soot oxidation behaviour are reported. The differences were further emphasised for a case with short injection duration: in such conditions, TCI was found to play a major role concerning the soot oxidation behaviour because of the importance of soot-oxidiser structure in mixture fraction space. Neglecting TCI leads to a strong over-estimation of soot oxidation after the end of injection. The results suggest that for some engines, and for some phenomena, the neglect of turbulent fluctuations may lead to predictions of acceptable engineering accuracy, but that a proper turbulent combustion model is needed for more reliable results. © 2014 Taylor & Francis.

Temperature measurements of the bluff body surface of a Swirl Burner using phosphor thermometry

Flames are often stabilised on bluff-bodies, yet their surface temperatures are rarely measured. This paper presents temperature measurements for the bluff body surface of the Cambridge/Sandia Stratified Swirl Burner. The flame is stabilized by a bluff body, designed to provide a series of turbulent premixed and stratified methane/air flames with a variable degree of swirl and stratification. Recently, modellers have raised concerns about the role of surface temperature on the resulting gas temperatures and the overall heat loss of the burner. Laser-induced phosphorescence is used to measure surface temperatures, with Mg4GeO6F:Mn as the excitation phosphor, creating a spatially resolved temperature map. Results show that the temperature of the bluff body is in the range 550-900 K for different operating conditions. The temperature distribution is strongly correlated with the degree of swirl and local equivalence ratio, reflecting the temperature distribution obtained in the gas phase. The overall heat loss represents only a small fraction (<0.5%) of the total heat load, yet the local surface temperature may affect the local heat transfer and gas temperatures. © 2014 The Combustion Institute.

An evidence of defect gettering in GaN

The effect of Neon ion implantation on the structural and optical properties of MOCVD grown GaN was studied. X-ray diffraction and low temperature photoluminescence measurements were carried out on the implanted samples annealed at 900 degrees C. The peak at 3.41 eV exhibited an interesting behavior in as-grown and the implanted samples. Annealing has enhanced the intensity of this peak in as-grown samples, but suppressed in all the implanted samples. Capturing of defects by cavities during gettering process is interpreted as the reason for the observed behavior of this luminescence peak. Implantation dose of 5 x 10(15) ions/cm(2) caused the complete quenching of yellow band luminescence. (C) 2008 Elsevier B.V. All rights reserved.

Recent progresses of Si-based photonics in chinese main land

Si-based photonic materials and devices, including SiGe/Si quantum structures, SOI and InGaAs bonded on Si, PL of Si nanocrystals, SOI photonic crystal filter, Si based RCE (Resonant Cavity Enhanced) photodiodes, SOI TO (thermai-optical) switch matrix were investigated in Institute of Serniconductors, Chinese Academy of Sciences. The main results in recent years are presented in the paper. The mechanism of PL from Si NCs embedded in SiO2 matrix was studied, a greater contribution of the interface state recombination (PL peak in 850 similar to 900 nm) is associated with larger Si NCs and higher interface state density. Ge dots with density of order of 10(11) cm(-2) were obtained by UHV/CVD growth and 193 nm excimer laser annealing. SOI photonic crystal filter with resonant wavelength of 1598 nm and Q factor of 1140 was designed and made. Si based hybrid InGaAs RCE PD with eta of 34.4% and FWHM of 27 nut were achieved by MOCVD growth and bonding technology between InGaAs epitaxial and Si wafers. A 16x16 SOI optical switch matrix were designed and made. A new current driving circuit was used to improve the response speed of a 4x4 SOI rearrangeable nonblocking TO switch matrix, rising and failing time is 970 and 750 ns, respectively.

Effect of annealing on photoluminescence properties of neon implanted GaN

The effect of thermal annealing on the luminescence properties of neon implanted GaN thin films was studied. Low temperature photoluminescence (PL) measurements were carried out on the samples implanted with different doses ranging from 10(14) to 9 x 10(15) cm(-2) and annealed isochronally at 800 and 900 degrees C. We observed a new peak appearing at 3.44 eV in the low temperative PL spectra of all the implanted samples after annealing at 900 degrees C. This peak has not been observed in the PL spectra of implanted samples annealed at 800 degrees C except for the samples implanted with the highest dose. The intensity of the yellow luminescence (YL) band noticed in the PL spectra measured after annealing was observed to decrease with the increase in dose until it was completely suppressed at a dose of 5 x 10(15) cm(-2). The appearance of a new peak at 3.44 eV and dose dependent suppression of the YL band are attributed to the dissociation of VGaON complexes caused by high energy ion implantation.

Nitrogen defects and ferromagnetism in Cr-doped dilute magnetic semiconductor AlN from first principles

High Curie temperature of 900 K has been reported in Cr-doped AlN diluted magnetic semiconductors prepared by various methods, which is exciting for spintronic applications. It is believed that N defects play important roles in achieving the high-temperature ferromagnetism in good samples. Motivated by these experimental advances, we use a full-potential density-functional-theory method and supercell approach to investigate N defects and their effects on ferromagnetism of (Al,Cr)N with N vacancies (V-N). We investigate the structural and electronic properties of V-N, single Cr atom, Cr-Cr atom pairs, Cr-V-N pairs, and so on. In each case, the most stable structure is obtained by comparing different atomic configurations optimized in terms of the total energy and the force on every atom, and then it is used to calculate the defect formation energy and study the electronic structures. Our total-energy calculations show that the nearest substitutional Cr-Cr pair with the two spins in parallel is the most favorable and the nearest Cr-V-N pair makes a stable complex. Our formation energies indicate that V-N regions can be formed spontaneously under N-poor condition because the minimal V-N formation energy equals -0.23 eV or Cr-doped regions with high enough concentrations can be formed under N-rich condition because the Cr formation energy equals 0.04 eV, and hence real Cr-doped AlN samples are formed by forming some Cr-doped regions and separated V-N regions and through subsequent atomic relaxation during annealing. Both of the single Cr atom and the N vacancy create filled electronic states in the semiconductor gap of AlN. N vacancies enhance the ferromagnetism by adding mu(B) to the Cr moment each but reduce the ferromagnetic exchange constants between the spins in the nearest Cr-Cr pairs. These calculated results are in agreement with experimental observations and facts of real Cr-doped AlN samples and their synthesis. Our first-principles results are useful to elucidate the mechanism for the ferromagnetism and to explore high-performance Cr-doped AlN diluted magnetic semiconductors.

Electrical characterization of Er- and Pr-implanted GaN films

Hall, current-voltage, and deep-level transient spectroscopy measurements were used to characterize the electrical properties of metalorganic chemical vapor deposition grown undoped, Er- and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. However, four defect levels located at 0.300, 0.188, 0.600, and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280, 0.190, 0.610, and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30 min. The origins of the deep defect levels are discussed. (C) 2005 American Institute of Physics.

Rapid thermal annealing properties of ZnO films grown using methanol as oxidant

ZnO thin films were grown by metal-organic chemical vapour deposition using methanol as oxidant. Rapid thermal annealing (RTA) was performed in an ambient of one atmosphere oxygen at 900 degrees C for 60 s. The RTA properties of the films have been characterized using scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, photoluminescence spectra and Hall measurement. The grains of the film were well coalesced and the surface became denser after RTA. The full-width at half maximum of rocking curves was only 496 arcsec. The ZnO films were also proved to have good optical quality. The Hall mobility increased to 43.2 cm(2) V-1 s(-1) while the electron concentration decreased to 6.6 x 10(16) cm(-3). It is found that methanol is a potential oxidant for ZnO growth and the quality of ZnO film can be improved substantially through RTA.

Investigation of oxygen vacancy and interstitial oxygen defects in ZnO films by photoluminescence and x-ray photoelectron spectroscopy

ZnO films prepared at different temperatures and annealed at 900 degrees C in oxygen are studied by photoluminescence (PL) and x-ray photoelection spectroscopy (XPS). It is observed that in the PL of the as-grown films the green luminescence (GL) and the yellow luminescence (YL) are related, and after annealing the GL is restrained and the YL is enhanced. The O 1s XPS results also show the coexistence of oxygen vacancy (Vo) and interstitial oxygen (O-i) before annealing and the quenching of the V-o after annealing. By combining the two results it is deduced that the GL and YL are related to the V-o and O-i defects, respectively.

Giant and zero electron g factors of dilute nitride semiconductor nanowires

The electronic structures and electron g factors of InSb1-sNs and GaAs1-sNs nanowires and bulk material under the magnetic and electric fields are investigated by using the ten-band k.p model. The nitrogen doping has direct and indirect effects on the g factors. A giant g factor with absolute value larger than 900 is found in InSb1-sNs bulk material. A transverse electric field can increase the g factors, which has obviously asymmetric effects on the g factors in different directions. An electric field tunable zero g factor is found in GaAs1-sNs nanowires. (C) 2007 American Institute of Physics.

Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m

The authors report the effects of rapid thermal annealing (RTA) on the emission properties of highly uniform self-assembled InAs quantum dots (QDs) emitting at 1.3 mu m grown on GaAs substrate by metal organic chemical vapor deposition. Postgrowth RTA experiments were performed under N-2 flow at temperatures ranging from 600 to 900 degrees C for 30 s using GaAs proximity capping. Surprisingly, in spite of the capping, large blueshifts in the emission peak (up to about 380 meV at 850 degrees C) were observed (even at low annealing temperatures) along with enhanced integrated photoluminescence (PL) intensities. Moreover, pronounced peak broadenings occurred at low annealing temperatures (< 700 degrees C), indicating that RTA does not always cause peak narrowing, as is typically observed with traditional QDs with large inhomogeneous PL linewidths. The mechanism behind the large peak blueshift was studied and found to be attributed to the as-grown QDs with large size, which cause a larger dot-barrier interface and greater strain in and near the QD regions, thereby greatly promoting Ga-In intermixing across the interface during RTA. The results reported here demonstrate that it is possible to significantly shift the emission peak of the QDs by RTA without any additional procedures, even at lower annealing temperatures. (c) 2007 American Institute of Physics.

Deep level and photoluminescence studies of Er-implanted GaN films

Deep level transient spectroscopy measurements were performed on the metal organic chemical vapor deposition epitaxially grown GaN before and after the implantation with Er. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300, 0.188, 0.600 and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees for 30 min. The origins of the deep defect levels were discussed. The photoluminescence (PL) properties of Er-implanted GaN thin films were also studied. After annealing at 900 degrees for 30 min in a nitrogen flow, Er-related 1.54 mu m luminescence peaks could be observed for the Er-implanted GaN sample. Moreover, the energy-transfer and recombination processes of the Er-implanted GaN film were described. (c) 2006 Elsevier B.V. All rights reserved.

Deep level transient spectroscopy studies of Er and Pr implanted GaN films

Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30min. The origins of the deep defect levels are discussed. After annealing at 900 degrees C for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.