The development of turbine exit flow in a swan-necked inter-stage diffuser

This paper describes both the migration and dissipation of flow phenomena downstream of a transonic high-pressure turbine stage. The geometry of the HP stage exit duct considered is a swan-necked diffuser similar to those likely to be used in future engine designs. The paper contains results both from an experimental programme in a turbine test facility and from numerical predictions. Experimental data was acquired using three fast-response aerodynamic probes capable of measuring Mach number, whirl angle, pitch angle, total pressure and static pressure. The probes were used to make time-resolved area traverses at two axial locations downstream of the rotor trailing edge. A 3D time-unsteady viscous Navier-Stokes solver was used for the numerical predictions. The unsteady exit flow from a turbine stage is formed from rotordependent phenomena (such as the rotor wake, the rotor trailing edge recompression shock, the tip-leakage flow and the hub secondary flow) and vane-rotor interaction dependant phenomena. This paper describes the time-resolved behaviour and three-dimensional migration paths of both of these phenomena as they convect downstream. It is shown that the inlet flow to a downstream vane is dominated by two corotating vortices, the first caused by the rotor tip-leakage flow and the second by the rotor hub secondary flow. At the inlet plane of the downstream vane the wake is extremely weak and the radial pressure gradient is shown to have caused the majority of the high loss wake fluid to be located between the mid-height of the passage and the casing wall. The structure of the flow indicates that between a high pressure stage and a downstream vane simple two-dimensional blade row interaction does not occur. The results presented in this paper indicate that the presence of an upstream stage is likely to significantly alter the structure of the secondary flow within a downstream vane. The paper also shows that vane-rotor interaction within the upstream stage causes a 10° circumferential variation in the inlet flow angle of the 2nd stage vane.

Secondary flows and loss caused by blade row interaction in a turbine stage

A study of the three-dimensional stator-rotor interaction in a turbine stage is presented. Experimental data reveal vortices downstream of the rotor which are stationary in the absolute frame - indicating that they are caused by the stator exit flowfield. Evidence of the rotor hub passage vortices is seen, but additional vortical structures away from the endwalls, which would not be present if the rotor were tested in isolation, are also identified. An unsteady computation of the rotor row is performed using the measured stator exit flowfield as the inlet boundary condition. The strength and location of the vortices at rotor exit are predicted. A formation mechanism is proposed whereby stator wake fluid with steep spanwise gradients of absolute total pressure is responsible for all but one of the rotor exit vortices. This mechanism is then verified computationally using a passive-scalar tracking technique. The predicted loss generation through the rotor row is then presented and a comparison made with a steady calculation where the inlet flow has been mixed out to pitchwise uniformity. The loss produced in the steady simulation, even allowing for the mixing loss at inlet, is 10% less than that produced in the unsteady simulation. This difference highlights the importance of the time-accurate calculation as a tool of the turbomachine designer.

Reynolds number influence on turbulent blocking effects of a rigid plane boundary (2nd report, direct numerical simulation using townsend's eddy forcing)

The Reynolds number influence on turbulent blocking effects by a rigid plane boundary is studied using direct numerical simulation (DNS). A new forcing method using 'simple model eddies' (Townsend 1976) for DNS of stationary homogeneous isotropic turbulence is proposed. A force field is obtained in real space by sprinkling many space-filling 'simple model eddies' whose centers are randomly but uniformly distributed in space and whose axes of rotation are random. The method is applied to a shear-free turbulent boundary layer over a rigid plane boundary and the blocking effects are investigated. The results show that stationary homogeneous isotropic turbulence is generated in real space using the present method. By using different model eddies with different sizes and rotation speeds, we could change the turbulence properties such as the integral and micro scales, the turbulent Reynolds number and the isotropy of turbulence. Turbulence intensities near the wall showed good agreements with the previous measurement and the linear analysis based on a rapid distortion theory (RDT). The splat effect (i.e., turbulence intensities of the components parallel to the boundary are amplified) occurs near the boundary and the viscous effect prohibits the splat effect at the quasi steady state at low Reynolds number.

The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires

Using first-principles methods, we systematically study the mechanism of defect formation and electronic structures for 3d transition-metal impurities (V, Cr, Mn, Fe, and Co) doped in silicon nanowires. We find that the formation energies of 3d transition-metal impurities with electrons or holes at the defect levels always increase as the diameters of silicon nanowires decrease, which suggests that self-purification, i.e., the difficulty of doping in silicon nanowires, should be an intrinsic effect. The calculated results show that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires. It indicates that Mn and Fe can easily occupy substitutional site in the interior of silicon nanowires. Moreover, they have larger localized moments, which means that they are good candidates for Si-based dilute magnetic semiconductor nanowires. The doping of Mn and Fe atom in silicon nanowires introduces a pair of energy levels with t(2) symmetry. One of which is dominated by 3d electrons of Mn or Fe, and the other by neighboring dangling bonds of Si vacancies. In addition, a set of nonbonding states localized on the transition-metal atom with e symmetry is also introduced. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000445]

Origin and Enhancement of Hole-Induced Ferromagnetism in First-Row d(0) Semiconductors

The origin of ferromagnetism in d(0) semiconductors is studied using first-principles methods with ZnO as a prototype material. We show that the presence of spontaneous magnetization in nitrides and oxides with sufficient holes is an intrinsic property of these first-row d(0) semiconductors and can be attributed to the localized nature of the 2p states of O and N. We find that acceptor doping, especially doping at the anion site, can enhance the ferromagnetism with much smaller threshold hole concentrations. The quantum confinement effect also reduces the critical hole concentration to induce ferromagnetism in ZnO nanowires. The characteristic nonmonotonic spin couplings in these systems are explained in terms of the band coupling model.

A 1,000 Frames/s Programmable Vision Chip with Variable Resolution and Row-Pixel-Mixed Parallel Image Processors

A programmable vision chip with variable resolution and row-pixel-mixed parallel image processors is presented. The chip consists of a CMOS sensor array, with row-parallel 6-bit Algorithmic ADCs, row-parallel gray-scale image processors, pixel-parallel SIMD Processing Element (PE) array, and instruction controller. The resolution of the image in the chip is variable: high resolution for a focused area and low resolution for general view. It implements gray-scale and binary mathematical morphology algorithms in series to carry out low-level and mid-level image processing and sends out features of the image for various applications. It can perform image processing at over 1,000 frames/s (fps). A prototype chip with 64 x 64 pixels resolution and 6-bit gray-scale image is fabricated in 0.18 mu m Standard CMOS process. The area size of chip is 1.5 mm x 3.5 mm. Each pixel size is 9.5 mu m x 9.5 mu m and each processing element size is 23 mu m x 29 mu m. The experiment results demonstrate that the chip can perform low-level and mid-level image processing and it can be applied in the real-time vision applications, such as high speed target tracking.

Method for generating maximally entangled states of multiple three-level atoms in cavity QED

We propose a scheme to generate maximally entangled states (MESs) of multiple three-level atoms in microwave cavity QED based on the resonant atom-cavity interaction. In the scheme, multiple three-level atoms initially in their ground states are sequently sent through two suitably prepared cavities. After a process of appropriate atom-cavity interaction, a subsequent measurement on the second cavity field projects the atoms onto the MESs. The practical feasibility of this method is also discussed.

Generation of a supersinglet of three three-level atoms in cavity QED

We propose a scheme to generate a supersinglet of three three-level atoms in microwave cavity quantum electrodynamics based on the resonant atom-cavity interaction. In the scheme, three three-level atoms in suitable initial states are sequentially sent through three cavities originally prepared in their vacuum states. After an appropriate atom-cavity interaction process, in the subsequent measurement on the third cavity field the atoms are projected onto the desired supersinglet. The practical feasibility of this method is discussed.

Interlayer segregation of Cu atoms in Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers and its influence on magnetic properties

Experimental results show that the exchange coupling field (H-ex) of NiFe/FeMn for Ta/NiFe/FeMn/Ta multilayers is higher than that for spin-valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. In order to find out the reason, the composition and chemical states at the surface of Ta(12 nm)/NiFe(7 nm), Ta(12 nm)/NiFe(7 nm)/Cu(4 nm), and Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) were studied using x-ray photoelectron spectroscopy. The results show that no elements from lower layers float out or segregate to the surface in the first and second samples. However, Cu atoms segregate to the surface of Ta(12 nm)/NiFe(7 nm)/Cu(3 nm)/NiFe(5 nm) multilayers, i.e., Cu atoms segregate to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. We believe that the presence of Cu atoms at the interface of NiFe/FeMn is one of the important factors which causes the exchange coupling field (H-ex) of Ta/NiFe/Cu/NiFe/FeMn/Ta to be weaker than that of Ta/NiFe/FeMn/Ta. (C) 2002 American Institute of Physics.