Continous Time Sigma-Delta Modulator Employing a Novel Comparator Architecture

A novel comparator architecture is proposed for speed operation in low voltage environment. Performance comparison with a conventional regenerative comparator shows a speed-up of 41%. The proposed comparator is embedded in a continuous time sigma-delta ADC so as to reduce the quantizer delay and hence minimizes the excess loop delay problem. A performance enhancement of 1dB in the dynamic range of the ADC is achieved with this new comparator. We have implemented this ADC in a standard single-poly 8-Metal 0.13 mum UMC process. The entire system operates at 1.2 V supply providing a dynamic range of 32 dB consuming 720 muW of power and occupies an area of 0.1 mm2.

Recent Advances in Low CTE and High Density System-on-a-Package (SOP) Substrate with Thin Film Component Integration

The Packaging Research Center has been developing next generation system-on-a-package (SOP) technology with digital, RF, optical, and sensor functions integrated in a single package/module. The goal of this effort is to develop a platform substrate technology providing very high wiring density and embedded thin film passive and active components using PWB compatible materials and processes. The latest SOP baseline process test vehicle has been fabricated on novel Si-matched CTE, high modulus C-SiC composite core substrates using 10mum thick BCB dielectric films with loss tangent of 0.0008 and dielectric constant of 2.65. A semi-additive plating process has been developed for multilayer microvia build-up using BCB without the use of any vacuum deposition or polishing/CMP processes. PWB and package substrate compatible processes such as plasma surface treatment/desmear and electroless/electrolytic pulse reverse plating was used. The smallest line width and space demonstrated in this paper is 6mum with microvia diameters in the 15-30mum range. This build-up process has also been developed on medium CTE organic laminates including MCL-E-679F from Hitachi Chemical and PTFE laminates with Cu-Invar-Cu core. Embedded decoupling capacitors with capacitance density of >500nF/cm2 have been integrated into the build-up layers using sol-gel synthesized BaTiO3 thin films (200-300nm film thickness) deposited on copper foils and integrated using vacuum lamination and subtractive etch processes. Thin metal alloy resistor films have been integrated into the SOP substrate using two methods: (a) NiCrAlSi thin films (25ohms per square) deposited on copper foils (Gould Electronics) laminated on the build-up layers and two step etch process for resistor definition, and (b) electroless plated Ni-W-P thin films (70 ohms to few Kohms per square) on the BCB dielectric by plasma surface treatment and activation. The electrical design and build-up layer structure along- - with key materials and processes used in the fabrication of the SOP4 test vehicle were presented in this paper. Initial results from the high density wiring and embedded thin film components were also presented. The focus of this paper is on integration of materials, processes and structures in a single package substrate for system-on-a-package (SOP) implementation

Transient electric field distribution within the working volume of an NEMP simulator

Nuclear electro-magnetic pulse (NEMP) simulators which are used in the simulation of transient electromagnetic fields due to a high altitude nuclear detonation are generally excited with a double exponential high voltage pulse. This results in a current distribution on the wires of the simulator and hence a transient electric field in the working volume of the simulator where the test object is kept. It is found that for the simulator under study, the current distribution is non-uniform and so is the field distribution along the width of the simulator in the working volume. To make the current distribution uniform, several methods have been suggested and the results of these methods are analyzed and suitable conclusions are arrived at from those results.

Biquadratic pulse transmission networks

A second order transfer function with two poles and two zeros exhibits a step response characterized by a sudden rise to the steady state value, followed by oscillations around this steady state. With proper choice of the coefficients, it is possible to obtain transfer functions suitable for pulse transmission purposes.

Modified McMurray Inverter with Pulse Forming Network Commutation Circuits

The modified McMurray Inverter with Pulse Forming Network (PFN) has been explained. The current and voltage waveshapes of the PFN commutation ci rcuit have been compared with conventional L-commutation circuit. The design method of PFN has been explained. Advantages of this type of commutation have been discussed. Experimental results are given.

Thermal decomposition of haloethanols: single pulse shock tube and ab initio studies

This paper reports single pulse shock tube and ab initio studies on thermal decomposition of 2-fluoro and 2-chloroethanol at T=1000–1200 K. Both molecules have HX (X = F/Cl) and H2O molecular elimination channels. The CH3CHO formed by HX elimination is chemically active and undergoes secondary decomposition resulting in the formation of CH4, C2H6, and C2H4. A detailed kinetic simulation indicates that the formation of C2H4 could not be quantitatively explained as arising exclusively from secondary CH3CHO decomposition. Contributions from primary radical processes need to be considered to explain C2H4 quantitatively. Ab initio calculations on HX and H2O elimination reactions from the haloethanols at HF, MP2, and DFT levels with various basis sets up to 6/311++G**are reported. It is pointed out that due to strong correlations between A and Eα, comparison of these two parameters between experimental and theoretical results could be misleading.