A voltage-controlled ring oscillator using InP full enhancement-mode HEMT logic

A voltage-controlled ring oscillator (VCO) based on a full enhancement-mode InAIAs/InGaAs/InP high electron mobility transistor (HEMT) logic is proposed. An enhancement-mode HEMT (E-HEMT) is fabricated, whose threshold is demonstrated to be 10 mV. The model of the E-HEMT is established and used in the SPICE simulation of the VCO. The result proves that the full E-HEMT logic technology can be applied to the VCO. And compared with the HEMT DCFL technology, the complexity of our fabrication process is reduced and the reliability is improved.

A Monolithic Integrated Logic Circuit of Resonant Tunneling Diodes and a HEMT

A technology for the monolithic integration of resonant tunneling diodes (RTDs) and high electron mobility transistors (HEMTs) is developed. Molecular beam epitaxy is used to grow an RTD on a HEMT structure on GaAs substrate. The RTD has a room temperature peak-to-valley ratio of 5.2:1 with a peak current density of 22.5kA/cm~2. The HEMT has a 1μm gate length with a-1V threshold voltage. A logic circuit called a monostableto-bistable transition logic element (MOBILE) circuit is developed. The experimental result confirms that the fabricated logic circuit operates successfully with frequency operations of up to 2GHz.

Analysis of the practical force accuracy of electromagnet-based nanoindenters

Two important factors that influence the force accuracy of the electromagnet-based nano-indenters but have not yet attracted much attention are analyzed, and a more reasonable way to estimate the force accuracy is presented in this paper. MTS Nano Indenter (R), with the characteristics of a coil suspended in a uniform magnetic field by two sets of springs acting as an actuator and force measuring unit, is used as an example. One of the two factors is the uniformity of the magnetic field. The other is the stiffness of the supporting spring. Consequently, the practical force accuracy varies considerably from test to test because it firmly depends on the working position of the coil and the displacement stroke. A reasonable estimated accuracy value is of the order of 10 degrees mu N for typical indentation tests with a 10(2) nm indentation depth or a 10 degrees mN test force. (C) 2010 Elsevier Ltd. All rights reserved.

Concise synthesis of novel practical sulfamide-amine alcohols for the enantioselective addition of diethylzinc to aldehydes

Novel sulfamide-amine alcohol ligands were designed using a grafting strategy and synthesized from readily available starting materials via a simple, efficient method. The key features of these ligands for the asymmetric addition of diethylzinc to aldehydes included stability, enhanced effectiveness without using Ti((OPr)-Pr-i)(4), suitability for a variety of aldehydes, the ability to operate at room temperature, and selectability to afford either absolute configuration products with enantiomeric excess up to >99%.

Potassium-Lead-Switched G-Quadruplexes: A New Class of DNA Logic Gates

A cation-driven allosteric G-quadruplex DNAzyme (PW17) was utilized to devise a conceptually new class of DNA logic gate based on cation-tuned ligand binding and release. K+ favors the binding of hemin to parallel-stranded PW17, thereby promoting the DNAzyme activity, whereas Pb2+ induces PW17 to undergo a parallel-to-antiparallel conformation transition and thus drives hemin to release from the G-quadruplex, deactivating the DNAzyme. Such a K+-Pb2+ switched G-quadruplex, in fact, functions as a two-input INHIBIT logic gate. With the introduction of another input EDTA, this G-quadruplex can be further utilized to construct a reversibly operated IMPLICATION gate.

A Facile and Practical One-Pot Synthesis of beta-Oxo Thioamides from beta-Oxo Amides and Isothiocyanates

A facile and practical one-pot synthesis of beta-oxo thioamides from beta-oxo amides has been developed. By treatment with isothiocyanates in ethanol in the presence of potassium carbonate, a series of beta-oxo amides was converted, under reflux, in high yields into the corresponding beta-oxo thioamides.