Analisador de vibrações de dois canais baseado em computador

O presente trabalho teve como principal objectivo o desenvolvimento de um analisador de vibrações de dois canais baseado em computador, para a realização de diagnóstico no âmbito do controlo de condição de máquinas. Foi desenvolvida uma aplicação num computador comum, no software LabVIEW, que através de transdutores de aceleração do tipo MEMS conectados via USB, faz a recolha de dados de vibração e procede ao seu processamento e apresentação ao utilizador. As ferramentas utilizadas para o processamento de dados são ferramentas comuns encontradas em vários analisadores de vibrações disponíveis no mercado. Estas podem ser: gráficos de espectro de frequência, sinal no tempo, cascata ou valores de nível global de vibração, entre outras. Apesar do analisador desenvolvido não apresentar inovação nas ferramentas de análise adoptadas, este pretende ser distinguido pelo baixo custo, simplicidade e carácter didáctico. Este trabalho vem evidenciar as vantagens, desvantagens e potencialidades de um analisador desta natureza. São tiradas algumas conclusões quanto à sua capacidade de diagnóstico de avarias, capacidades como ferramenta didáctica, sensores utilizados e linguagem de programação escolhida. Como conclusões principais, o trabalho revela que os sensores escolhidos não são os indicados para efectuar o diagnóstico de avarias em ambiente industrial, contudo são ideais para tornar este analisador numa boa ferramenta didáctica e de treino.

Implementação de WDM com dispositivos semicondutores

Este trabalho utiliza uma estrutura pin empilhada, baseada numa liga de siliceto de carbono amorfo hidrogenado (a-Si:H e/ou a-SiC:H), que funciona como filtro óptico na zona visível do espectro electromagnético. Pretende-se utilizar este dispositivo para realizar a demultiplexagem de sinais ópticos e desenvolver um algoritmo que permita fazer o reconhecimento autónomo do sinal transmitido em cada canal. O objectivo desta tese visa implementar um algoritmo que permita o reconhecimento autónomo da informação transmitida por cada canal através da leitura da fotocorrente fornecida pelo dispositivo. O tema deste trabalho resulta das conclusões de trabalhos anteriores, em que este dispositivo e outros de configuração idêntica foram analisados, de forma a explorar a sua utilização na implementação da tecnologia WDM. Neste trabalho foram utilizados três canais de transmissão (Azul – 470 nm, Verde – 525 nm e Vermelho – 626 nm) e vários tipos de radiação de fundo. Foram realizadas medidas da resposta espectral e da resposta temporal da fotocorrente do dispositivo, em diferentes condições experimentais. Variou-se o comprimento de onda do canal e o comprimento de onda do fundo aplicado, mantendo-se constante a intensidade do canal e a frequência de transmissão. Os resultados obtidos permitiram aferir sobre a influência da presença da radiação de fundo e da tensão aplicada ao dispositivo, usando diferentes sequências de dados transmitidos nos vários canais. Verificou-se, que sob polarização inversa, a radiação de fundo vermelho amplifica os valores de fotocorrente do canal azul e a radiação de fundo azul amplifica o canal vermelho e verde. Para polarização directa, apenas a radiação de fundo azul amplifica os valores de fotocorrente do canal vermelho. Enquanto para ambas as polarizações, a radiação de fundo verde, não tem uma grande influência nos restantes canais. Foram implementados dois algoritmos para proceder ao reconhecimento da informação de cada canal. Na primeira abordagem usou-se a informação contida nas medidas de fotocorrente geradas pelo dispositivo sob polarização inversa e directa. Pela comparação das duas medidas desenvolveu-se e testou-se um algoritmo que permite o reconhecimento dos canais individuais. Numa segunda abordagem procedeu-se ao reconhecimento da informação de cada canal mas com aplicação de radiação de fundo, tendo-se usado a informação contida nas medidas de fotocorrente geradas pelo dispositivo sob polarização inversa sem aplicação de radiação de fundo com a informação contida nas medidas de fotocorrente geradas pelo dispositivo sob polarização inversa com aplicação de radiação de fundo. Pela comparação destas duas medidas desenvolveu-se e testou-se o segundo algoritmo que permite o reconhecimento dos canais individuais com base na aplicação de radiação de fundo.

Non-selective optical wavelength-division multiplexing devices based on a-SiC:H multilayer heterostuctures

In this paper we present results on the optimization of multilayered a-SiC:H heterostructures for wavelength-division (de) multiplexing applications. The non selective WDM device is a double heterostructure in a glass/ITO/a-SiC:H (p-i-n) /a-SiC:H(-p) /a-Si:H(-i')/a-SiC:H (-n')/ITO configuration. The single or the multiple modulated wavelength channels are passed through the device, and absorbed accordingly to its wavelength, giving rise to a time dependent wavelength electrical field modulation across it. The effect of single or multiple input signals is converted to an electrical signal to regain the information (wavelength, intensity and frequency) of the incoming photogenerated carriers. Here, the (de) multiplexing of the channels is accomplished electronically, not optically. This approach offers advantages in terms of cost since several channels share the same optical components; and the electrical components are typically less expensive than the optical ones. An electrical model gives insight into the device operation.

A two terminal optical signal and image processing p-i-n/p-i-n image and colour sensor

A two terminal optically addressed image processing device based on two stacked sensing/switching p-i-n a-SiC:H diodes is presented. The charge packets are injected optically into the p-i-n sensing photodiode and confined at the illuminated regions changing locally the electrical field profile across the p-i-n switching diode. A red scanner is used for charge readout. The various design parameters and addressing architecture trade-offs are discussed. The influence on the transfer functions of an a-SiC:H sensing absorber optimized for red transmittance and blue collection or of a floating anode in between is analysed. Results show that the thin a-SiC:H sensing absorber confines the readout to the switching diode and filters the light allowing full colour detection at two appropriated voltages. When the floating anode is used the spectral response broadens, allowing B&W image recognition with improved light-to-dark sensitivity. A physical model supports the image and colour recognition process.

ITO/SiOx/Si optical sensor with internal gain

A visible/near-infrared optical sensor based on an ITO/SiOx/n-Si structure with internal gain is presented. This surface-barrier structure was fabricated by a low-temperature processing technique. The interface properties and carder transport were investigated from dark current-voltage and capacitance-voltage characteristics. Examination of the multiplication properties was performed under different light excitation and reverse bias conditions. The spectral and pulse response characteristics are analysed. The current amplification mechanism is interpreted by the control of electron current by the space charge of photogenerated holes near the SiOx/Si interface. The optical sensor output characteristics and some possible device applications are presented.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a double colour laser scanned photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the colour detection process are analysed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Optical confinement and colour separation in a double colour laser scanned photodiode (D/CLSP)

Large area n-i-p-n-i-p a-SiC:H heterostructures are used as sensing element in a Double Color Laser Scanned Photodiode image sensor (D/CLSP). This work aims to clarify possible improvements, physical limits and performance of CLSP image sensor when used as non-pixel image reader. Here, the image capture device and the scanning reader are optimized and the effects of the sensor structure on the output characteristics discussed. The role of the design of the sensing element, the doped layer composition and thickness, the read-out parameters (applied voltage and scanner frequency) on the image acquisition and the color detection process are analyzed. A physical model is presented and supported by a numerical simulation of the output characteristics of the sensor.

Optical properties and transport in PLD-GaN

We present structural, optical and transport data on GaN samples grown by hybrid, two-step low temperature pulsed laser deposition. The band gap of samples with good crystallinity has been deduced from optical spectra. Large below gap band tails were observed. In samples with the lowest crystalline quality the PL spectra are quite dependent on spot laser incidence. The most intense PL lines can be attributed to excitons bounded to stacking faults. When the crystalline quality of the samples is increased the ubiquitous yellow emission band can be detected following a quenching process described by a similar activation energy to that one found in MOCVD grown samples. The samples with the highest quality present, besides the yellow band, show a large near band edge emission which peaked at 3.47 eV and could be observed up to room temperature. The large width of the NBE is attributed to effect of a wide distribution of band tail states on the excitons. Photoconductivity data supports this interpretation.

: SiC Multilayer Photonic Structures with Self Optical Bias Amplification

Characteristics of tunable wavelength pi'n/pin filters based on a-SiC:H multilayered stacked cells are studied both experimental and theoretically. Results show that the device combines the demultiplexing operation with the simultaneous photodetection and self amplification of the signal. An algorithm to decode the multiplex signal is established. A capacitive active band-pass filter model is presented and supported by an electrical simulation of the state variable filter circuit. Experimental and simulated results show that the device acts as a state variable filter. It combines the properties of active high-pass and low-pass filter sections into a capacitive active band-pass filter using a changing photo capacitance to control the power delivered to the load.

Structural and optical studies of Au doped titanium oxide films

Thin films of TiO2 were doped with Au by ion implantation and in situ during the deposition. The films were grown by reactive magnetron sputtering and deposited in silicon and glass substrates at a temperature around 150 degrees C. The undoped films were implanted with Au fiuences in the range of 5 x 10(15) Au/cm(2)-1 x 10(17) Au/cm(2) with a energy of 150 keV. At a fluence of 5 x 10(16) Au/cm(2) the formation of Au nanoclusters in the films is observed during the implantation at room temperature. The clustering process starts to occur during the implantation where XRD estimates the presence of 3-5 nm precipitates. After annealing in a reducing atmosphere, the small precipitates coalesce into larger ones following an Ostwald ripening mechanism. In situ XRD studies reveal that Au atoms start to coalesce at 350 degrees C, reaching the precipitates dimensions larger than 40 nm at 600 degrees C. Annealing above 700 degrees C promotes drastic changes in the Au profile of in situ doped films with the formation of two Au rich regions at the interface and surface respectively. The optical properties reveal the presence of a broad band centered at 550 nm related to the plasmon resonance of gold particles visible in AFM maps. (C) 2011 Elsevier B.V. All rights reserved.

Multilayer Architectures Based on a-SiC:H Material: Tunable Wavelength Filters in Optical Processing Devices

The characteristics of tunable wavelength filters based on a-SiC:H multilayered stacked pin cells are studied both theoretically and experimentally. The optical transducers were produced by PECVD and tested for a proper fine tuning of the cyan and yellow fluorescent proteins emission. The active device consists of a p-i'(a-SiC:H)-n/p-i(a-Si:H)-n heterostructures sandwiched between two transparent contacts. Experimental data on spectral response analysis, current-voltage characteristics and color and transmission rate discrimination are reported. Cyan and yellow fluorescent input channels were transmitted together, each one with a specific transmission rate and different intensities. The multiplexed optical signal was analyzed by reading out, under positive and negative applied voltages, the generated photocurrents. Results show that the optimized optical transducer has the capability of combining the transient fluorescent signals onto a single output signal without losing any specificity (color and intensity). It acts as a voltage controlled optical filter: when the applied voltages are chosen appropriately the transducer can select separately the cyan and yellow channel emissions (wavelength and frequency) and also to quantify their relative intensities. A theoretical analysis supported by a numerical simulation is presented.

Optical Transducers Based on Amorphous Si/SiC Photodiodes

Amorphous Si/SiC photodiodes working as photo-sensing or wavelength sensitive devices have been widely studied. In this paper single and stacked a-SiC:H p-i-n devices, in different geometries and configurations, are reviewed. Several readout techniques, depending on the desired applications (image sensor, color sensor, wavelength division multiplexer/demultiplexer device) are proposed. Physical models are presented and supported by electrical and numerical simulations of the output characteristics of the sensors.

Extended-spectrum β-lactamases from the North of Portugal in the boundaries to Spain: emergence of high resistance to 4th generation cephalosporins

During the past 15 years, emergence and dissemination of third-generation cephalosporins resistance in nosocomial Enterobacteriaceae became a serious problem worldwide, due to the production of extended-spectrum-β-lactamases (ESBLs). The aim of this study was to investigate among the presence of ESBL-producing enterobacteria among Portuguese clinical isolates nearby Spain, to investigate the antimicrobial susceptibility patterns and to compare the two countries. The β-lactamases genes, blaTEM, blaSHV and blaCTX-M were detected by molecular methods. Among the ESBL-producing isolates it was found extraordinary levels (98.9%) of resistance to the fourth-generation cephalosporin Cefepime. These findings point to the need of reevaluate the definition of ESBL.

Photodetector with integrated optical thin film filters

This paper reports on optical filters based on a-SiC:H tandem pi'n/pin heterostructures. The spectral sensitivity is analyzed. Steady state optical bias with different wavelengths are applied from each front and back sides and the photocurrent is measured. Results show that it is possible to control the sensitivity of the device and to tune a specific wavelength range by combining radiations with complementary light penetration depths. The transfer characteristics effects due to changes in the front and back optical bias wavelength are discussed. Depending on the wavelength of the external background and irradiation side, the device acts either as a short- or a long-pass band filter or as a band-stop filter. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels.