A COMMON-CAVITY 2-SECTION INGAASP/INP BISTABLE LASER WITH A LOW OPTICAL SWITCHING POWER

The characteristics of the steady-state and the transient response to external light excitation of a common-cavity two-section (CCTS) bistable semiconductor laser is investigated. The results on the relation of light output versus light input, the wavelength match, optical amplification and optical switching are presented. Experimental results are compared to the results of a computer simulation.

DEVELOPMENT OF CURRENT-BASED MICROSCOPIC DEFECT ANALYSIS-METHODS AND ASSOCIATED OPTICAL FILLING TECHNIQUES FOR THE INVESTIGATION ON HIGHLY IRRADIATED HIGH-RESISTIVITY SILICON DETECTORS

Current based microscopic defect analysis methods such as current deep level transient spectroscopy (I-DLTS) and thermally stimulated current (TSC) have been further developed in accordance with the need for the defect analysis of highly irradiated (Phi(n) > 10(13) n/cm(2)) high resistivity silicon detectors. The new I-DLTS/TSC system has a temperature range of 8 K less than or equal to T less than or equal to 450 K and a high sensitivity that can detect a defect concentration of less than 10(10)/cm(3) (background noise as low as 10 fA). A new filling method using different wavelength laser illumination has been applied, which is more efficient and suitable than the traditional voltage pulse filling. It has been found that the filling of a defect level depends on such factors as the total concentration of free carriers generated or injected, the penetration length of the laser (laser wavelength), the temperature at which the filling is taking place, as well as the decay time after the filling (but before the measurement). The mechanism of the defect filling can be explained by the competition between trapping and detrapping of defect levels, possible capture cross section temperature dependence, and interaction among various defect levels in terms of charge transferring. Optimum defect filling conditions have been suggested for highly irradiated high resistivity silicon detectors.

Optical Pr operties of GaNAs and GaAsSb Semiconductors

Under short pulse laser excitation, it has been observed, for the first time, a new high-energy photoluminescence emission from GaNx As1- x/GaAs SQWs. This new emission has totally different optical properties compared with the localized exciton transition in GaNx As1-x, and is attributed to the recombination of delocalized excitons in QWs. At the same time, a competition process between localized and delocalized exciton emissions in GaNx As1-x/GaAs quantum wells is observed in the temperaturedependent PL spectra under the short pulse excitation. This competition process for the first time, reveals the physical origin of the temperature-induced S-shaped PL peak shift, which was often reported in the disordered alloy semiconductor system under continuous-wave excitation and puzzled people for a long time. We have also investigated a set of GaNx As1- x samples with small nitrogen composition( x ＜ 1% )by PL, and time-resolved PL. After the PL dependence on temperature and excitation power and PL dynamics were measured, the new PL peak was identified as an intrinsic transition of alloy, rather than N-related bound states. This is the first observation in PL, showing that alloy state exists in GaNx As1- x materials even when N composition is smaller than 0.1%. Finally by selective excitation,both type-Ⅰ and type-Ⅱ transitions were observed simultaneously in GaAs1-xSbx/GaAs SQWs for the first time.

Optical study of localized and delocalized states in GaAsN/GaAs

Taking advantages of short pulse excitation and time-resolved photoluminescence (PL), we have studied the exciton localization effect in a number of GaAsN alloys and GaAsN/GaAs quantum wells (QWs). In the PL spectra, an extra transition located at the higher energy side of the commonly reported N-related emissions is observed. By measuring PL dependence on temperature and excitation power along with PL dynamics study, the new PL peak has been identified as a transition of the band edge-related recombination in dilute GaAsN alloy and delocalized transition in QWs. Using selective excitation PL we further attribute the localized emission in QWs to the excitons localized at the GaAsN/GaAs interfaces. This interface-related exciton localization could be greatly reduced by a rapid thermal annealing.

Optical study of electronic states in GaAsN

GaAs1-xNx alloys with small N composition (x<1%) and GaAsN/GaAs quantum wells (QWs) were studied by continuous wave photoluminescence (PL), pulse wave excitaiton PL and time-resolved PL. In the PL spectra an extra transition located at the higher energy side of the commonly reported N-related emissions was observed. By measuring the PL dependence on temperature and excitation power, the new PL peak was identified as a transition of alloy band edge-related recombination in GaAsN and delocalized transition in QWs. The PL dynamics further confirms its intrinsic nature of band edge states rather than N-related bound states.

Low-timing-jitter, stretched-pulse passively mode-locked fiber laser with tunable repetition rate and high operation stability

We design a low-timing-jitter, repetition-rate-tunable, stretched-pulse passively mode-locked fiber laser by using a nonlinear amplifying loop mirror (NALM), a semiconductor saturable absorber mirror (SESAM), and a tunable optical delay line in the laser configuration. Low-timing-jitter optical pulses are stably produced when a SESAM and a 0.16 m dispersion compensation fiber are employed in the laser cavity. By inserting a tunable optical delay line between NALM and SESAM, the variable repetition-rate operation of a self-starting, passively mode-locked fiber laser is successfully demonstrated over a range from 49.65 to 50.47 MHz. The experimental results show that the newly designed fiber laser can maintain the mode locking at the pumping power of 160 mW to stably generate periodic optical pulses with width less than 170 fs and timing jitter lower than 75 fs in the 1.55 mu m wavelength region, when the fundamental repetition rate of the laser is continuously tuned between 49.65 and 50.47 MHz. Moreover, this fiber laser has a feature of turn-key operation with high repeatability of its fundamental repetition rate in practice.

High speed nonlinear optical components for next-generation optical communications

Electronic signal processing systems currently employed at core internet routers require huge amounts of power to operate and they may be unable to continue to satisfy consumer demand for more bandwidth without an inordinate increase in cost, size and/or energy consumption. Optical signal processing techniques may be deployed in next-generation optical networks for simple tasks such as wavelength conversion, demultiplexing and format conversion at high speed (≥100Gb.s-1) to alleviate the pressure on existing core router infrastructure. To implement optical signal processing functionalities, it is necessary to exploit the nonlinear optical properties of suitable materials such as III-V semiconductor compounds, silicon, periodically-poled lithium niobate (PPLN), highly nonlinear fibre (HNLF) or chalcogenide glasses. However, nonlinear optical (NLO) components such as semiconductor optical amplifiers (SOAs), electroabsorption modulators (EAMs) and silicon nanowires are the most promising candidates as all-optical switching elements vis-à-vis ease of integration, device footprint and energy consumption. This PhD thesis presents the amplitude and phase dynamics in a range of device configurations containing SOAs, EAMs and/or silicon nanowires to support the design of all optical switching elements for deployment in next-generation optical networks. Time-resolved pump-probe spectroscopy using pulses with a pulse width of 3ps from mode-locked laser sources was utilized to accurately measure the carrier dynamics in the device(s) under test. The research work into four main topics: (a) a long SOA, (b) the concatenated SOA-EAMSOA (CSES) configuration, (c) silicon nanowires embedded in SU8 polymer and (d) a custom epitaxy design EAM with fast carrier sweepout dynamics. The principal aim was to identify the optimum operation conditions for each of these NLO device configurations to enhance their switching capability and to assess their potential for various optical signal processing functionalities. All of the NLO device configurations investigated in this thesis are compact and suitable for monolithic and/or hybrid integration.

Broadband pulse propagation with electromagnetically induced transparency: Splitting of adiabatic and nonadiabatic components

The propagation of a broadband pulse through a dense resonant medium with a narrow transparency window is considered. We show that the pulse splits into a slowly propagating adiabatic part and a fast nonadiabatic part. © 2005 Optical Society of America.

Supercontinuum Generation by Stimulated Raman Scattering and Parametric Four-Wave Mixing in Photonic Crystal Fibers

Supercontinuum generation is investigated experimentally and numerically in a highly nonlinear indexguiding photonic crystal optical fiber in a regime in which self-phase modulation of the pump wave makes a negligible contribution to spectral broadening. An ultrabroadband octave-spanning white-light continuum is generated with 60-ps pump pulses of subkilowatt peak power. The primary mechanism of spectral broadening is identified as the combined action of stimulated Raman scattering and parametric four-wave mixing. The observation of a strong anti-Stokes Raman component reveals the importance of the coupling between stimulated Raman scattering and parametric four-wave mixing in highly nonlinear photonic crystal fibers and also indicates that non-phase-matched processes contribute to the continuum. Additionally, the pump input polarization affects the generated continuum through the influence of polarization modulational instability. The experimental results are in good agreement with detailed numerical simulations. These findings demonstrate the importance of index-guiding photonic crystal fibers for the design of picosecond and nanosecond supercontinuum light sources. © 2002 Optical Society of America.

Fundamental limits to few-cycle pulse generation from compression of broadband supercontinua generated in photonic crystal fiber

The compression properties of octave-spanning supercontinuum spectra generated in photonic crystal fibers are studied using stochastic nonlinear Schrödinger equation simulations. The conditions under which sub-5 fs pulses can be obtained after compression are identified. © 2004 Optical Society of America.

Coherence Properties of Supercontinuum Spectra Generated in Photonic Crystal and Tapered Optical Fibers

Numerical simulations have been used in studies of the temporal and spectral features of supercontinuum generation in photonic crystal and tapered optical fibers. In particular, an ensemble average over multiple simulations performed with random quantum noise on the input pulse allows the coherence of the supercontinuum to be quantified in terms of the dependence of the degree of first-order coherence on the wavelength. The coherence is shown to depend strongly on the input pulse's duration and wavelength, and optimal conditions for the generation of coherent supercontinua are discussed. © 2002 Optical Society of America.

Numerical Simulations and Coherence Properties of Supercontinuum Generation in Photonic Crystal and Tapered Optical Fibers

Numerical simulations have been used to study broad-band supercontinuum generation in optical fibers with dispersion and nonlinearity characteristics typical and photonic crystal or tapered fibers structures. The simulations include optical shock and Raman nonlinearity terms, with quantum noise taken into account phenomenologically by including in the input field a noise seed of one photon per mode with random phase. For input pulses of 150-fs duration injected in the anomalous dispersion regime, the effect of modulational instability is shown to lead to severe temporal jitter in the output, and associated fluctuations in the spectral amplitude and phase across the generated supercontinuum. The spectral phase fluctuations are quantified by performing multiple simulations and calculating both the standard deviation of the phase and, more rigorously, the degree of first-order coherence as a function of wavelength across the spectrum. By performing simulations over a range of input pulse durations and wavelengths, we can identify the conditions under which coherent supercontinua with a well-defined spectral phase are generated.

Continuous-wave ultrahigh-repetition-rate pulse train generation through modulational instability in a passive fiber cavity

Thanks to a passive cavity configuration, modulational instability in fibers is successfully observed, for the first time to our knowledge, in the continuous-wave regime. Our technique provides a new means of generating all-optically ultrahigh-repetition-rate pulse trains and opens up new possibilities for the fundamental study of modulational instability and related phenomena. © 2001 Optical Society of America.

Effect of a COL1A1 Sp1 Binding Site Polymorphism on Arterial Pulse Wave Velocity: An Index of Compliance.

Reduced arterial compliance precedes changes in blood pressure, which may be mediated through alterations in vessel wall matrix composition. We investigated the effect of the collagen type I-1 gene (COL1A1) +2046G>T polymorphism on arterial compliance in healthy individuals. We recruited 489 subjects (251 men and 238 women; mean age, 22.6±1.6 years). COL1A1 genotypes were determined using polymerase chain reaction and digestion by restriction enzyme Bal1. Arterial pulse wave velocities were measured in 3 segments, aortoiliac (PWVA), aortoradial (PWVB), and aorto-dorsalis-pedis (PWVF), as an index of compliance using a noninvasive optical method. Data were available for 455 subjects. The sample was in Hardy-Weinberg equilibrium with genotype distributions and allele frequencies that were not significantly different from those reported previously. The T allele frequency was 0.22 (95% confidence interval, 0.19 to 0.24). Two hundred eighty-three (62.2%) subjects were genotype GG, 148 (35.5%) subjects were genotype GT, and 24 (5.3%) subjects were genotype TT. A comparison of GG homozygotes with GT and TT individuals demonstrated a statistically significant association with arterial compliance: PWVF 4.92±0.03 versus 5.06±0.05 m/s (ANOVA, P=0.009), PWVB 4.20±0.03 versus 4.32±0.04 m/s (ANOVA, P=0.036), and PWVA 3.07±0.03 versus 3.15±0.03 m/s (ANOVA, P=0.045). The effects of genotype were independent of age, gender, smoking, mean arterial pressure, body mass index, family history of hypertension, and activity scores. We report an association between the COL1A1 gene polymorphism and arterial compliance. Alterations in arterial collagen type 1A deposition may play a role in the regulation of arterial compliance