Graphene-driven revolutions in ICT and beyond

This session described the FET Flagship Pilot on graphene and related two-dimensional materials. The flagship targets a revolution in information and communication technology, with impacts reaching into other areas of the society. The session featured four talks on the scientific and technological potential and open research challenges within the scope of the proposed flagship, industrial view on possibilities and challenges posed by graphene and related materials, and presentation on the implementation and structure of the flagship pilot. © Selection and peer-review under responsibility of FET11 conference organizers and published by Elsevier B.V.

Inkjet-printed graphene electronics.

We demonstrate inkjet printing as a viable method for large-area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to ∼95 cm(2) V(-1) s(-1), as well as transparent and conductive patterns, with ∼80% transmittance and ∼30 kΩ/□ sheet resistance. This paves the way to all-printed, flexible, and transparent graphene devices on arbitrary substrates.

Plasmonic nanostructure enhanced graphene-based photodetectors

Graphene exhibits electrical and optical properties promising for future applications in ultra-fast photonics[1]. High carrier mobility and Fermi velocity[2, 3] combined with its constant absorption over the visible wavelength range to the near-infrared[4] potentially allow its application for photodetection over a broad wavelength spectrum, operating at high frequencies. However, absorption being 2.3% per monolayer[4], responsiv-ity of these devices is rather low[5, 6]. Here we show that by combining graphene-based photodetectors with metal-nanostructures, plasmonic effects lead to an increased respon-sivity. © 2011 by the Author(s); licensee Accademia Peloritana dei Pericolanti, Messina, Italy.