922 resultados para cone beam


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Nano structured noble metals have very important applications in diverse fields as photovoltaics, catalysis, electronic and magnetic devices, etc. Here, we report the application of dual beam thermal lens technique for the determination of the effect of silver sol on the absolute fluorescence quantum yield (FQY) of the laser dye rhodamine 6G. A 532 nm radiation from a diode pumped solid state laser was used as the excitation source. It has been observed that the presence of silver sol decreases the fluorescence quantum efficiency. This is expected to have a very important consequence in enhancing Raman scattering which is an important spectrochemical tool that provides information on molecular structures. We have also observed that the presence of silver sol can enhance the thermal lens signal which makes the detection of the signal easier at any concentration.

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A novel fixed frequency beam scanning microstrip leaky wave antenna is reported. The beam scanning at fixed frequency is achieved by reactive loading. Simulation and measured results shows frequency scanability of 80° as well as fixed frequency beam steering of 68° over the −10 dB impedance band of 4.56–5.06 GHz.

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In the present thesis, possibility of beam shaping of sectoral horns and corner reflector systems'has been studied in detail. The experimental results obtained in the above two cases are compared. As far as the flanged sectoral horns are concerned, the special advantage is that the gain is increased without impairing impedance conditions. An intense study on corner reflector antennas shows that the been broadening or focussing will be possible by adjusting parameters involved. Beam tilting by imposing asymmetries is another interesting property of the systems. A comprehensive study of these fields has been presented in Chapter II. Chapter III is exclusively for describing the experimental techniques used in the present investigation. In Chapter IV, experimental results on flanged sectoral horns and corner reflector eyetses are presented. A comparative analysis of the experimental results obtained with flanged sectoral horns and corner reflector systems is presented in the Chapter V. The similarity and close resemblance in each aspects are shown by presenting typical results from these two eysteee. Theoretical aspects of both types of antennas are considered in Chapter VI. Attempts are made for co-ordinating the theoretical aspects and drawing a final conclusion. In Chapter VII. the final conclusion that the flanged sectoral horn may be considered as a corner reflector system has been drawn. The importance of the conclusions and usefulness are pointed out. The scope for further work in these lines has been indicated.

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The need for improved feed systems for large reflector antennas employed in Radio Astronomy and Satellite tracking spurred the interest in horn antenna research in the 1960's. The major requirements were to reduce spill over, cross-polarisation losses,and to enhance the aperture efficiency to the order of about 75-8O%L The search for such a feed culminated in the corrugated horn. The corrugat1e 1 horn triggered widespread interest and enthusiasm, and a large amount of work(32’34’49’5O’52’53’58’65’75’79)has already been done on this type of antennas. The properties of corrugated surfaces has been investigated in detail. It was strongly felt that the flange technique and the use of corrugated surfaces could be merged together to obtain the advantages of both. This is the idea behind the present work. Corrugations are made on the surface of flange elements. The effect of various corrugation parameters are studied. By varying the flange parameters, a good amount of data is collected and analysed to ascertain the effects of corrugated flanges. The measurements are repeated at various frequencies, in the X— and S-bands. The following parameters of the system were studied: (a) beam shaping (b) gain (c) variation of V.S.U.R. (d) possibility of obtaining circularly polarised radiation from the flanged horn. A theoretical explanation to the effects of corrugated flanges is attempted on the basis of the line-source theory. Even though this theory utilises a simplified model for the calculation of radiation patterns, fairly good agreement between the computed pattern and experimental results are observed.

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The flange technique, suggested by Reynolds72 is simple technique to improve antenna characteristics. Using flange technique we can trim the antenna characteristic by suitably adjusting the flange parameters75. Later corrugated flanges87 are used for beam shaping. The important parameters of the corrugated flanges are (a) flange angle, (b) flange width, (c) flange position, (d) conductivity of the flange, (e) amplitude excitation of the flange elements, (f) period of corrugation etc. Compared to a compound horn the flange technique offers great convenience in trimming antenna characteristics. Horns are commonly used as a feed in radar and satellite communications. A large number of work had been done to improve the characteristics of horn antennas. It is an established fact that grooved walls on the inner surface of a horn can improve the antenna characteristics44. Corrugated comb surface can be used for the circular polarization98, tilt of polarization99 etc. This suggests the possibility to combine these two phenomena and to obtain a resultant beam. This thesis presents the result of an investigation to study the possibility of controlling different antenna characteristics like polarization, beam shaping, matching etc, using corrugated flange techniques.

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This paper gives the details of flexure-shear analysis of concrete beams reinforced with GFRP rebars. The influence of vertical reinforcement ratio, longitudinal reinforcement ratio and compressive strength of concrete on shear strength of GFRP reinforced concrete beam is studied. The critical value of shear span to depth ratio (a/d) at which the mode of failure changes from flexure to shear is studied. The fail-ure load of the beam is predicted for various values of a/d ratio. The prediction show that the longitudinally FRP reinforced concrete beams having no stirrups fail in shear for a/d ratio less than 9.0. It is expected that the predicted data is useful for structural engineers to design the FRP reinforced concrete members.

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Transition metal acetylides, MC2 (M=Fe, Co and Ni), exhibit ferromagnetic behavior of which TC is characteristic of their size and structure. CoC2 synthesized in anhydrous condition exhibited cubic structure with disordered C2− 2 orientation. Once being exposed to water (or air), the particles behave ferromagnetically due to the lengthening of the Co–Co distance by the coordination of water molecules to Co2+ cations. Heating of these particles induces segregation of metallic cores with carbon mantles. Electron beam or 193 nm laser beam can produce nanoparticles with metallic cores covered with carbon mantles

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In continuation of our previous work on the quintet transitions 1s2s2p^2 ^5 P-1s2s2p3d ^5 P^0, ^5 D^0, results on other n = 2 - n' = 3 quintet transitions for elements N, 0 and F are presented. Assignments have been established by comparison with Multi-Configuration Dirac-Fock calculations. High spectral resolution on beam-foil spectroscopy was essential for the identification of most of the lines. For some of the quintet lines decay curves were measured, and the lifetimes extracted were found to be in reasonable agreement with MCDF calculations.

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Energy spectra of electrons ejected from collisions between a carbon foil and Ne projectiles with energies between 1.4 and 20 MeV have been measured. Continuous and discrete electron energy distributions are observed. Auger transitions of foil-excited Ne have been studied. Using relativistic Dirac-Fock multiconfiguration calculations, most of the measured Auger transitions have been identified.

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To study the behaviour of beam-to-column composite connection more sophisticated finite element models is required, since component model has some severe limitations. In this research a generic finite element model for composite beam-to-column joint with welded connections is developed using current state of the art local modelling. Applying mechanically consistent scaling method, it can provide the constitutive relationship for a plane rectangular macro element with beam-type boundaries. Then, this defined macro element, which preserves local behaviour and allows for the transfer of five independent states between local and global models, can be implemented in high-accuracy frame analysis with the possibility of limit state checks. In order that macro element for scaling method can be used in practical manner, a generic geometry program as a new idea proposed in this study is also developed for this finite element model. With generic programming a set of global geometric variables can be input to generate a specific instance of the connection without much effort. The proposed finite element model generated by this generic programming is validated against testing results from University of Kaiserslautern. Finally, two illustrative examples for applying this macro element approach are presented. In the first example how to obtain the constitutive relationships of macro element is demonstrated. With certain assumptions for typical composite frame the constitutive relationships can be represented by bilinear laws for the macro bending and shear states that are then coupled by a two-dimensional surface law with yield and failure surfaces. In second example a scaling concept that combines sophisticated local models with a frame analysis using a macro element approach is presented as a practical application of this numerical model.

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The main focus and concerns of this PhD thesis is the growth of III-V semiconductor nanostructures (Quantum dots (QDs) and quantum dashes) on silicon substrates using molecular beam epitaxy (MBE) technique. The investigation of influence of the major growth parameters on their basic properties (density, geometry, composition, size etc.) and the systematic characterization of their structural and optical properties are the core of the research work. The monolithic integration of III-V optoelectronic devices with silicon electronic circuits could bring enormous prospect for the existing semiconductor technology. Our challenging approach is to combine the superior passive optical properties of silicon with the superior optical emission properties of III-V material by reducing the amount of III-V materials to the very limit of the active region. Different heteroepitaxial integration approaches have been investigated to overcome the materials issues between III-V and Si. However, this include the self-assembled growth of InAs and InGaAs QDs in silicon and GaAx matrices directly on flat silicon substrate, sitecontrolled growth of (GaAs/In0,15Ga0,85As/GaAs) QDs on pre-patterned Si substrate and the direct growth of GaP on Si using migration enhanced epitaxy (MEE) and MBE growth modes. An efficient ex-situ-buffered HF (BHF) and in-situ surface cleaning sequence based on atomic hydrogen (AH) cleaning at 500 °C combined with thermal oxide desorption within a temperature range of 700-900 °C has been established. The removal of oxide desorption was confirmed by semicircular streaky reflection high energy electron diffraction (RHEED) patterns indicating a 2D smooth surface construction prior to the MBE growth. The evolution of size, density and shape of the QDs are ex-situ characterized by atomic-force microscopy (AFM) and transmission electron microscopy (TEM). The InAs QDs density is strongly increased from 108 to 1011 cm-2 at V/III ratios in the range of 15-35 (beam equivalent pressure values). InAs QD formations are not observed at temperatures of 500 °C and above. Growth experiments on (111) substrates show orientation dependent QD formation behaviour. A significant shape and size transition with elongated InAs quantum dots and dashes has been observed on (111) orientation and at higher Indium-growth rate of 0.3 ML/s. The 2D strain mapping derived from high-resolution TEM of InAs QDs embedded in silicon matrix confirmed semi-coherent and fully relaxed QDs embedded in defectfree silicon matrix. The strain relaxation is released by dislocation loops exclusively localized along the InAs/Si interfaces and partial dislocations with stacking faults inside the InAs clusters. The site controlled growth of GaAs/In0,15Ga0,85As/GaAs nanostructures has been demonstrated for the first time with 1 μm spacing and very low nominal deposition thicknesses, directly on pre-patterned Si without the use of SiO2 mask. Thin planar GaP layer was successfully grown through migration enhanced epitaxy (MEE) to initiate a planar GaP wetting layer at the polar/non-polar interface, which work as a virtual GaP substrate, for the GaP-MBE subsequently growth on the GaP-MEE layer with total thickness of 50 nm. The best root mean square (RMS) roughness value was as good as 1.3 nm. However, these results are highly encouraging for the realization of III-V optical devices on silicon for potential applications.

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Holes with different sizes from microscale to nanoscale were directly fabricated by focused ion beam (FIB) milling in this paper. Maximum aspect ratio of the fabricated holes can be 5:1 for the hole with large size with pure FIB milling, 10:1 for gas assistant etching, and 1:1 for the hole with size below 100 nm. A phenomenon of volume swell at the boundary of the hole was observed. The reason maybe due to the dose dependence of the effective sputter yield in low intensity Gaussian beam tail regions and redeposition. Different materials were used to investigate variation of the aspect ratio. The results show that for some special material, such as Ni-Be, the corresponding aspect ratio can reach 13.8:1 with Cl₂ assistant etching, but only 0.09:1 for Si(100) with single scan of the FIB.

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We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system.

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A decentralized model reference controller is designed to reduce the magnitude of the transversal vibration of a flexible cable-stayed beam structure induced by a seismic excitation. The controller design is made based on the principle of sliding mode such that a priori knowledge