996 resultados para Voltage dependence
Resumo:
The formation of anomalous indentations, with two opposite faces describing a pin-cushion effect and the other two faces normal, in long elongated grains of an extruded Mg-2Al-1Zn alloy is reported. Subsurface microstructural observations combined with Schmid factor calculations suggest that extension twinning accompanied by basal slip are the reasons for these. Johnson's expanding cavity model is invoked for further substantiation. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
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The development of crystallographic texture and the change in the grain size during warm rolling (300 deg K) and their effect on the tensile yield strength at 77 and 300 deg K are studied in 99.9% pure Cd. Both longitudinal and transverse specimens are tested. The yield strength obeys the Hall--Petch relation. The Hall--Petch slope, k, is lower and the intercept sigma o is higher in the warm worked material in comparison with the corresponding values for annealed Cd. The differences are attributed to the change in 1013 < and 0001 textures that are developed during warm rolling.26 refs.--AA
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An attempt has been made to systematically investigate the effects of microstructural parameters, such as the prior austenite grain size (PAGS), in influencing the resistance to fatigue crack growth (FCG) in the near-threshold region under three different temper levels in a quenched and tempered high-strength steel. By austenitizing at various temperatures, the PAGS was varied from about 0.7 to 96 μm. The microstructures with these grain sizes were tempered at 200 °C, 400 °C, and 530 °C and tested for fatigue thresholds and crack closure. It has been found that, in general, three different trends in the dependence of both the total threshold stress intensity range, ΔK th , and the intrinsic threshold stress intensity range, ΔK eff, th , on the PAGS are observable. By considering in detail the factors such as cyclic stress-strain behavior, environmental effects on FCG, and embrittlement during tempering, the present observations could be rationalized. The strong dependence of ΔK th and ΔK eff, th on PAGS in microstructures tempered at 530 °C has been primarily attributed to cyclic softening and thereby the strong interaction of the crack tip deformation field with the grain boundary. On the other hand, a less strong dependence of ΔK th and ΔK eff, th on PAGS is suggested to be caused by the cyclic hardening behavior of lightly tempered microstructures occurring in 200 °C temper. In both microstructures, crack closure influenced near-threshold FCG (NTFCG) to a significant extent, and its magnitude was large at large grain sizes. Microstructures tempered at the intermediate temperatures failed to show a systematic variation of ΔKth and ΔKeff, th with PAGS. The mechanisms of intergranular fracture vary between grain sizes in this temper. A transition from “microstructure-sensitive” to “microstructure-insensitive” crack growth has been found to occur when the zone of cyclic deformation at the crack tip becomes more or less equal to PAGS. Detailed observations on fracture morphology and crack paths corroborate the grain size effects on fatigue thresholds and crack closure.
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Thermal crystallization studies have been carried out on bulk, semiconducting AsxTe100−x glasses of different compositions using Differential Scanning Caloritmery. AsxTe100−x glasses with x < 40, are found to exhibit one glass transition and one crystallization. On the other hand, glasses with composition 40 less-than-or-equals, slantxless-than-or-equals, slant 50 show one glass transition and two crystallization reactions. It has been found that in glasses with x greater-or-equal, slanted 40, the two crystallization reactions progressively merge with an increase in arsenic concentration. Consequently AsxTe100−x glasses with x greater-or-equal, slanted 50 show only one crystallization. The composition dependence of crystallization temperatures and activation energies for crystallization estimated by Kissinger's method, show marked deviations at a composition x = 40. These observations can be explained in terms of the changes in the local structure of the material with composition.
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The optical bandgap and thermal diffusivity of Si10AsxTe90−x (10 ≤ x ≤ 50) and Si15AsxTe85−x (5 ≤ x ≤ 40) glasses have been measured using the photoacoustic technique. The anomalous behaviour observed in these properties at the mean coordination number left angle bracketrright-pointing angle bracket = 2.60 is interpreted by reference to the formation and development of a layered structure in these glasses.
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Non-linear resistors having current-limiting capabilities at lower field strengths, and voltage-limiting characteristics (varistors) at higher field strengths, were prepared from sintered polycrystalline ceramics of (Ba0.6Sr0.4)(Ti0.97Zr0.03)O3+0.3 at % La, and reannealed after painting with low-melting mixtures of Bi2O3 + PbO +B2O3. These types of non-linear characteristics were found to depend upon the non-uniform diffusion of lead and the consequent distribution of Curie points (T c) in these perovskites, resulting in diffuse phase transitions. Tunnelling of electrons across the asymmetric barrier at tetragonak-cubic interfaces changes to tunnelling across the symmetric barrier as the cubic phase is fully stabilized through Joule heating at high field strengths. Therefore the current-limiting characteristics switch over to voltage-limiting behaviour because tunnelling to acceptor-type mid-bandgap states gives way to band-to-band tunnelling.
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The ipso/cine ratio in the amination of 5-bromo-2,3-benzo- or 2-bromo-4,5-benzotropone shows a dependence upon the temperature at which the reaction is conducted, changing in favour of the ipso-product when the temperature is maintained high, ruling out an aryne-type mechanism. A comparison of independent mechanisms envisaged for the formation of the two isomeric products suggests a two-part reason: (i) at a higher reaction temperature, C-protonation, a step necessary for the formation of the cine-product, could be retarded when a direct internal mode is interfered with by a less efficient external one, and (ii) reketonisation by elimination of bromide, needed to form the ipso-product, is likely to have a high temperature coefficient enabling the rate of its formation to overtake that of the cine-product.
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In this paper, an effort is made to study accurately the field distribution for various types of ceramic insulators used for high-voltage transmission. The surface charge simulation method (SCSM) is employed for the field computation. With the help of SCSM program, a Novel field reduction electrode is designed and developed to reduce the maximum field around the pin region. In order to experimentally analyze the performance of discs with field reduction electrode, special artificial pollution test facility was built and utilized. The experimental results show better surface flashover performance of ceramic insulators used in high-voltage transmission and distribution systems.
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In an earlier study, we reported on the excitation of large-scale vortices in Cartesian hydrodynamical convection models subject to rapid enough rotation. In that study, the conditions for the onset of the instability were investigated in terms of the Reynolds (Re) and Coriolis (Co) numbers in models located at the stellar North pole. In this study, we extend our investigation to varying domain sizes, increasing stratification, and place the box at different latitudes. The effect of the increasing box size is to increase the sizes of the generated structures, so that the principal vortex always fills roughly half of the computational domain. The instability becomes stronger in the sense that the temperature anomaly and change in the radial velocity are observed to be enhanced. The model with the smallest box size is found to be stable against the instability, suggesting that a sufficient scale separation between the convective eddies and the scale of the domain is required for the instability to work. The instability can be seen upto the colatitude of 30 degrees, above which value the flow becomes dominated by other types of mean flows. The instability can also be seen in a model with larger stratification. Unlike the weakly stratified cases, the temperature anomaly caused by the vortex structures is seen to depend on depth.
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Neutral point clamped (NPC), three level converters with insulated gate bipolar transistor devices are very popular in medium voltage, high power applications. DC bus short circuit protection is usually done, using the sensed voltage across collector and emitter (i.e., V-CE sensing), of all the devices in a leg. This feature is accommodated with the conventional gate drive circuits used in the two level converters. The similar gate drive circuit, when adopted for NPC three level converter protection, leads to false V-CE fault signals for inner devices of the leg. The paper explains the detailed circuit behavior and reasons, which result in the occurrence of such false V-CE fault signals. This paper also illustrates that such a phenomenon shows dependence on the power factor of the supplied three-phase load. Finally, experimental results are presented to support the analysis. It is shown that the problem can be avoided by blocking out the V-CE sense fault signals of the inner devices of the leg.
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This paper presents the analysis and study of voltage collapse at any converter bus in an AC system interconnected by multiterminal DC (MTDC) links. The analysis is based on the use of the voltage sensitivity factor (VSF) as a voltage collapse proximity indicator (VCPI). In this paper the VSF is defined as a matrix which is applicable to MTDC systems. The VSF matrix is derived from the basic steady state equations of the converter, control, DC and AC networks. The structure of the matrix enables the derivation of some of the basic properties which are generally applicable. A detailed case study of a four-terminal MTDC system is presented to illustrate the effects of control strategies at the voltage setting terminal (VST) and other terminals. The controls considered are either constant angle, DC voltage, AC voltage, reactive current and reactive power at the VST and constant power or current at the other terminals. The effect of the strength of the AC system (measured by short circuit ratio) on the VSF is investigated. Several interesting and new results are presented. An analytical expression for the self VSF at VST is also derived for some specific cases which help to explain the number of transitions in VSF around the critical values of SCR.
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The impedance of sealed nickel/cadmium cells around a cell e.m.f. of 0.0 V was measured at five different temperatures between � 10 and +30 °C. The results show that the behaviour is similar at all temperatures. Based on the experimental results, the relation between charge-transfer resistance (Rct) and temperature (T) has been established for the Volmer reaction. Further, the value of cathodic transfer coefficient (?) has been estimated.