Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition

We report on a large improvement in the wetting of Al 2O 3 thin films grown by un-seeded atomic layer deposition on monolayer graphene, without creating point defects. This enhanced wetting is achieved by greatly increasing the nucleation density through the use of polar traps induced on the graphene surface by an underlying metallic substrate. The resulting Al 2O 3/graphene stack is then transferred to SiO 2 by standard methods. © 2012 American Institute of Physics.

Orthorhombic α-moo 3 coatings with lath-shaped morphology developed by SPPS: Applications to super-capacitors

Electrical double-layer capacitors owe their large capacitance to the formation of a double-layer at the electrode/electrolyte interface of high surface area carbon-based electrode materials. Greater electrical energy storage capacity has been attributed to transition metal oxides/nitrides that undergo fast, reversible redox reactions at the electrode surface (pseudo-capacitive behavior) in addition to forming electrical double-layers. Solution Precursor Plasma Spray (SPPS) has shown promise for depositing porous, high surface area transition metal oxides. This investigation explored the potential of SPPS to fabricate a-MoO 3 coatings with micro-structures suitable for use as super-capacitor electrodes. The effects of number of spray passes, spray distance, solution concentration, flow rate and spray velocity on the chemistry and micro-structure of the a-MoO 3 deposits were examined. DTA/TGA, SEM, XRD, and electrochemical analyses were performed to characterize the coatings. The results demonstrate the importance of post-deposition heating of the deposit by subsequent passes of the plasma on the coating morphology. © ASM International.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Point injection in trench insulated gate bipolar transistor for ultra low losses

In this paper we propose novel designs that enhance the plasma concentration across the Field Stop IGBT. The "p-ring" and the "point-injection" type devices exhibit increased cathode side conductivity modulation which results in impressive IGBT performance improvement. These designs are shown to be extremely effective in lowering the on-state losses without compromising the switching performance or the breakdown rating. For the same switching losses we can achieve more than 20% reduction of the on state energy losses compared to the conventional FS IGBT. © 2012 IEEE.

Correlations between the morphology and emission properties of trench defects in InGaN/GaN quantum wells

Atomic force microscopy (AFM) and scanning electron microscopy (SEM) with cathodoluminescence (CL) were performed on exactly the same defects in a blue-emitting InGaN/GaN multiple quantum well (QW) sample enabling the direct correlation of the morphology of an individual defect with its emission properties. The defects in question are observed in AFM and SEM as a trench partially or fully enclosing a region of the QW having altered emission properties. Their sub-surface structure has previously been shown to consist of a basal plane stacking fault (BSF) in the plane of the QW stack, and a stacking mismatch boundary (SMB) which opens up into a trench at the sample surface. In CL, the material enclosed by the trench may emit more or less intensely than the surrounding material, but always exhibits a redshift relative to the surrounding material. A strong correlation exists between the width of the trench and both the redshift and the intensity ratio, with the widest trenches surrounding regions which exhibit the brightest and most redshifted emission. Based on studies of the evolution of the trench width with the number of QWs from four additional MQW samples, we conclude that in order for a trench defect to emit intense, strongly redshifted light, the BSF must be formed in the early stages of the growth of the QW stack. The data suggest that the SMB may act as a non-radiative recombination center. © 2013 American Institute of Physics.

The high strain rate response of Ultra High Molecular-weight Polyethylene: From fibre to laminate

The effect of strain rate upon the uniaxial response of Ultra High Molecular-weight Polyethylene (UHMWPE) fibres, yarns and laminates of lay-up [0/90]48 has been measured in both the 0/90 and ±45 configurations. The tensile strength of the matrix-dominated ±45 laminate is two orders of magnitude less than that of the fibre-dominated 0/90 laminate, and is more sensitive to strain rate. A piezoelectric force sensor device was developed to obtain the high strain rate data, and this achieved a rise time of less than 1 μs. It is found that the failure strength (and failure strain) of the yarn is almost insensitive to strain rate within the range (10 -1-103 s-1). At low strain rates (below 10 -1 s-1), creep of the yarn dominates and the failure strain increases with diminishing strain rate. The tensile strength of the dry yarn exceeds that of the laminate by about 20%. Tests on single fibres exceed the strength of the yarn by 20%. © 2013 Elsevier Ltd. All rights reserved.

How to achieve ultra high photoconductive gain for transparent oxide semiconductor image sensors

We present quantitative analysis of the ultra-high photoconductivity in amorphous oxide semiconductor (AOS) thin film transistors (TFTs), taking into account the sub-gap optical absorption in oxygen deficiency defects. We analyze the basis of photoconductivity in AOSs, explained in terms of the extended electron lifetime due to retarded recombination as a result of hole localization. Also, photoconductive gain in AOS photo-TFTs can be maximized by reducing the transit time associated with short channel lengths, making device scaling favourable for high sensitivity operation. © 2012 IEEE.

Ultra-thin 242mAm fuel elements in nuclear reactors

There is a growing interest in using 242mAm as a nuclear fuel. The advantages of 242mAm as a nuclear fuel derive from the fact that 242mAm has the highest thermal fission cross section. The thermal capture cross section is relatively low and the number of neutrons per thermal fission is high. These nuclear properties make it possible to obtain nuclear criticality with ultra-thin fuel elements. The possibility of having ultra-thin fuel elements enables the use of these fission products directly, without the necessity of converting their energy to heat, as is done in conventional reactors. There are three options of using such highly energetic and highly ionized fission products. 1. Using the fission products themselves for ionic propulsion. 2. Using the fission products in an MHD generator, in order to obtain electricity directly. 3. Using the fission products to heat a gas up to a high temperature for propulsion purposes. In this work, we are not dealing with a specific reactor design, but only calculating the minimal fuel elements' thickness and the energy of the fission products emerging from these fuel elements. It was found that it is possible to design a nuclear reactor with a fuel element of less than 1 μm of 242mAm. In such a fuel element, 90% of the fission products' energy can escape.

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates

We investigate vertical and defect-free growth of GaAs nanowires on Si (111) substrates via a vapor-liquid-solid (VLS) growth mechanism with Au catalysts by metal-organic chemical vapor deposition (MOCVD). By using annealed thin GaAs buffer layers on the surface of Si substrates, most nanowires are grown on the substrates straight, following (111) direction; by using two temperature growth, the nanowires were grown free from structural defects, such as twin defects and stacking faults. Systematic experiments about buffer layers indicate that V/III ratio of precursor and growth temperature can affect the morphology and quality of the buffer layers. Especially, heterostructural buffer layers grown with different V/III ratios and temperatures and in-situ post-annealing step are very helpful to grow well arranged, vertical GaAs nanowires on Si substrates. The initial nanowires having some structural defects can be defect-free by two-temperature growth mode with improved optical property, which shows us positive possibility for optoelectronic device application. ©2010 IEEE.

Growth temperature and V/III ratio effects on the morphology and crystal structure of InP nanowires

The effects of growth temperature and V/III ratio on the morphology and crystallographic phases of InP nanowires that are grown by metal organic chemical vapour deposition have been studied. We show that higher growth temperatures or higher V/III ratios promote the formation of wurtzite nanowires while zinc-blende nanowires are favourableat lower growth temperatures and lower V/III ratios. A schematic map of distribution of zinc-blende and wurtzite structures has been developed in the range of growth temperatures (400-510 °C) and V/III ratios (44 to 700) investigated in this study. © 2010 IOP Publishing Ltd.

Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports

We grow ultra-high mass density carbon nanotube forests at 450°C on Ti-coated Cu supports using Co-Mo co-catalyst. X-ray photoelectron spectroscopy shows Mo strongly interacts with Ti and Co, suppressing both aggregation and lifting off of Co particles and, thus, promoting the root growth mechanism. The forests average a height of 0.38 μm and a mass density of 1.6 g cm -3. This mass density is the highest reported so far, even at higher temperatures or on insulators. The forests and Cu supports show ohmic conductivity (lowest resistance ∼22 kΩ), suggesting Co-Mo is useful for applications requiring forest growth on conductors. © 2013 AIP Publishing LLC.

Acoustic optimization of ultra-low count bypass outlet guide vanes

An optimization process has been used to design an ultra-low count fan outlet guide vane with an unconventional leading edge profile to reduce the interaction noise. Computational fluid dynamics has been used to predict the aerodynamic and acoustic performance of the stator vane. The final stator design has been built and tested in a representative fan stage rig to determine its tone noise characteristics. The stator vane is found to give significant tone noise reduction at the fundamental blade passing frequency at cut-back in line with design expectations. Detailed comparisons of predicted circumferential and radial modes levels against measured mode detection data are also presented. A good agreement was found between numerical predictions and experimental data.