Laser stimulated light reflection for TeO2-WO 3-Bi2O3 thin films with incorporated Si nanoparticles

A novel method of preparation of the Si nanoparticles (NPs) incorporated in tellurite TeO2-WO3-Bi2O3 (TWB) thin films is proposed. This mew method applies RF magnetron sputtering technique at room temperature. The incorporation of Si NP was confirmed by transmission electron microscopy (TEM); isolated Si NPs with diameters of around 6 nm are observed. Energy dispersive X-ray spectroscopy (EDS) was performed during TEM analysis in order to confirm the presence of Si NP and also the other elements of the thin film. The thin films are explored with respect to the photoinduced changes of the reflectivity within the 400-65 nm spectra range using a 10 ns pulsed Nd:YAG with power densities varying up to 400 MW/cm2 and beam diameter within the 3-5 mm range. The observed processes are analyzed within a framework of trapping level conceptions for the Si NP. The possible application of the discovered materials as optical sensitive sensors is proposed. © 2013 Elsevier B.V.

Estudo dos procedimentos utilizados para obtenção de microrretenções na superfície interna da porcelana: avaliação por meio de testes de rugosimetria e microscopia eletrônica de varredura

Pós-graduação em Ciências Odontológicas - FOAR

Recobrimentos cerâmicos bioativos pelo processo sol-gel sobre Ti c.p. modificado por laser empregados em implantes

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Análise da superfície de titânio sob ação do laser com e sem deposição de hidroxiapatita

Pós-graduação em Odontologia - FOA

Espectroscopia FT-Raman no diagnóstico do carcinoma espinocelular de mucosa bucal: estudo ex vivo em humanos

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Osseointegração de implantes de titânio com modificação da superfície por ablação a laser e recobrimento por hidroxiapatita biomimética: estudo biomecânico e histomorfométrico em tíbia de coelhos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Avaliação da microinfiltração e nanoinfiltração em restaurações de resina composta - Influência do laser no preparo cavitário e no pré-tratamento dentinário

O objetivo desra pesquisa foi avaliar a microinfiltração através da microscopia óptica e a nanoinfiltração, através da Microscopia Eletrônica de Varredura (MRV), em cavidades classe V, preparadas por dois métodos: 1) irradiação à laser Er:UAG mais condicionamento ácido e 2) turbinas de alta-rotação. Foi observado também a influência da irradiação do laser Nd;YAG em dois sistemas de adesivo dentinários: Single Bond (3M) e Prime & Bond NT (Dentsply). As cavidades foram restauradas com a resina composta Z100 quando foi utilizado o adesivo...

Avaliação de diferentes tratamentos de superfície na resistência de união de cerâmica de di-silicato de lítio

Pós-graduação em Odontologia Restauradora - ICT

Bond strength of composite to dentin: effect of acid etching and laser irradiation through an uncured self-etch adhesive system

This study evaluated the effect on micro-tensile bond strength (mu-TBS) of laser irradiation of etched/unetched dentin through an uncured self-etching adhesive. Dentinal surfaces were treated with Clearfil SE Bond Adhesive (CSE) either according to the manufacturer's instructions (CSE) or without applying the primer (CSE/NP). The dentin was irradiated through the uncured adhesive, using an Nd: YAG laser at 0.75 or 1 W power settings. The adhesive was cured, composite crowns were built up, and the teeth were sectioned into beams (0.49 mm(2)) to be stressed under tension. Data were analyzed using one-way ANOVA and Tukey statistics (alpha = 5%). Dentin of the fractured specimens and the interfaces of untested beams were observed under scanning electron microscopy (SEM). The results showed that non-etched irradiated surfaces presented higher mu-TBS than etched and irradiated surfaces (p < 0.05). Laser irradiation alone did not lead to differences in mu-TBS (p > 0.05). SEM showed solidification globules on the surfaces of the specimens. The interfaces were similar on irradiated and non-irradiated surfaces. Laser irradiation of dentin through the uncured adhesive did not lead to higher mu-TBS when compared to the suggested manufacturer's technique. However, this treatment brought benefits when performed on unetched dentin, since bond strengths were higher when compared to etched dentin.

Determinação da resistência à flexão de ligas odontológicas, utilizadas em prótese parcial fixa e prótese sobre implante, soldadas por brasagem e a laser

Pós-graduação em Odontologia Restauradora - ICT

Radiant exposure effects on physical properties of methacrylate - and silorane-composites

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Laser stimulated piezoelectricity in Er3+ doped GeO2-Bi2O3 glasses containing silicon nanocrystals

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Comparison of Different Dentin Pretreatment Protocols on the Bond Strength of Glass Fiber Post Using Self-etching Adhesive

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Adaptation and penetration of resin-based root canal sealers in root canals irradiated with high-intensity lasers

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Investigation of photoinduced electrical properties in the heterojunction TiO2/SnO2

TiO2/SnO2 thin films heterostructures were grown by the sol-gel dip-coating technique. It was found that the crystalline structure of TiO2 depends on the annealing temperature and the substrate type. TiO2 films deposited on glass substrate, submitted to thermal annealing until 550 degrees C, present anatase structure, whereas films deposited on quartz substrate transform to rutile structure when thermally annealed at 1100 degrees C. When structured as rutile, this oxide semiconductor has very close lattice parameters to those of SnO2, making easier the heterostructure assembling. The electrical properties of TiO2/SnO2 heterostructure were evaluated as function of temperature and excitation with different light sources. The temperature dependence of conductivity is dominated by a deep level with energy coincident with the second ionization level of oxygen vacancies in SnO2, suggesting the dominant role of the most external layer material (SnO2) to the electrical transport properties. The fourth harmonic of a Nd:YAG laser line (4.65 eV) seems to excite the most external layer whereas a InGaN LED (2.75 eV) seems to excite electrons from the ground state of a quantized interfacial channel as well as intrabandgap states of the TiO2 layer.