Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light generation in silicon photonic crystal cavities

Far-field optimized photonic crystal nanocavities are used to strongly increase light generation from crystalline silicon. Low-power continuous-wave harmonic generation as well as efficient room temperature light-emission from optically-active defects are demonstrated in these devices. © 2011 IEEE.

Nonlinear optics in Silicon photonic crystal cavities

Silicon is known to be a very good material for the realization of high-Q, low-volume photonic cavities, but at the same it is usually considered as a poor material for nonlinear optical functionalities like second-harmonic generation, because its second-order nonlinear susceptibility vanishes in the dipole approximation. In this work we demonstrate that nonlinear optical effects in silicon nanocavities can be strongly enhanced and even become macroscopically observable. We employ photonic crystal nanocavities in silicon membranes that are optimized simultaneously for high quality factor and efficient coupling to an incoming beam in the far field. Using a low-power, continuous-wave laser at telecommunication wavelengths as a pump beam, we demonstrate simultaneous generation of second- and third harmonics in the visible region, which can be observed with a simple camera. The results are in good agreement with a theoretical model that treats third-harmonic generation as a bulk effect in the cavity region, and second-harmonic generation as a surface effect arising from the vertical hole sidewalls. Optical bistability is also observed in the silicon nanocavities and its physical mechanisms (optical, due to two-photon generation of free carriers, as well as thermal) are investigated. © 2011 IEEE.

Hybrid microstrip and carbon nanotubes based patch antenna for wireless applications

In this we have looked at the concept of introducing carbon nanotubes on the surfaces of the microstrip patch antennas. We examined the performance improvements in a patch antenna through finite difference time domain simulations to increase the efficiency of the antenna. The results suggest that carbon nanotubes lead to a higher gain due to their electrical properties. A high gain antenna with low power requirements resulted in achieving a higher overall bandwidth. The designed antenna's gain, bandwidth and directivity are analyzed before and after introducing carbon nanotubes. © 2013 IEEE.

Nanoscale light-matter interactions in atomic cladding waveguides.

Alkali vapours, such as rubidium, are being used extensively in several important fields of research such as slow and stored light nonlinear optics quantum computation, atomic clocks and magnetometers. Recently, there is a growing effort towards miniaturizing traditional centimetre-size vapour cells. Owing to the significant reduction in device dimensions, light-matter interactions are greatly enhanced, enabling new functionalities due to the low power threshold needed for nonlinear interactions. Here, taking advantage of the mature platform of silicon photonics, we construct an efficient and flexible platform for tailored light-vapour interactions on a chip. Specifically, we demonstrate light-matter interactions in an atomic cladding waveguide, consisting of a silicon nitride nano-waveguide core with a rubidium vapour cladding. We observe the efficient interaction of the electromagnetic guided mode with the rubidium cladding and show that due to the high confinement of the optical mode, the rubidium absorption saturates at powers in the nanowatt regime.

Two-photon absorption in an atomic cladding wave guide

We experimentally demonstrate two-photon Doppler free interactions on a chip-scale platform consisting of a silicon nitride waveguide integrated with rubidium vapor cladding. We obtain absorption lines having widths of 300 MHz, using low power levels. © OSA 2013.

Two-photon absorption in an atomic cladding wave guide

We experimentally demonstrate two-photon Doppler free interactions on a chip-scale platform consisting of a silicon nitride waveguide integrated with rubidium vapor cladding. We obtain absorption lines having widths of 300 MHz, using low power levels. © OSA 2013.

A parametrically excited vibration energy harvester

In the arena of vibration energy harvesting, the key technical challenges continue to be low power density and narrow operational frequency bandwidth. While the convention has relied upon the activation of the fundamental mode of resonance through direct excitation, this article explores a new paradigm through the employment of parametric resonance. Unlike the former, oscillatory amplitude growth is not limited due to linear damping. Therefore, the power output can potentially build up to higher levels. Additionally, it is the onset of non-linearity that eventually limits parametric resonance; hence, this approach can also potentially broaden the operating frequency range. Theoretical prediction and numerical modelling have suggested an order higher in oscillatory amplitude growth. An experimental macro-sized electromagnetic prototype (practical volume of ∼1800 cm3) when driven into parametric resonance, has demonstrated around 50% increase in half power band and an order of magnitude higher peak power density normalised against input acceleration squared (293 μW cm-3 m-2 s4 with 171.5 mW at 0.57 m s-2) in contrast to the same prototype directly driven at fundamental resonance (36.5 μW cm-3 m-2 s4 with 27.75 mW at 0.65 m s-2). This figure suggests promising potentials while comparing with current state-of-the-art macro-sized counterparts, such as Perpetuum's PMG-17 (119 μW cm-3 m-2 s4). © The Author(s) 2013.

Smart universal multiple-valued logic gates by transferring single electrons

This paper proposes smart universal multiple-valued (MV) logic gates by transferring single electrons (SEs). The logic gates are based on MOSFET based SE turnstiles that can accurately transfer SEs with high speed at high temperature. The number of electrons transferred per cycle by the SE turnstile is a quantized function of its gate voltage, and this characteristic is fully exploited to compactly finish MV logic operations. First, we build arbitrary MV literal gates by using pairs of SE turnstiles. Then, we propose universal MV logic-to-value conversion gates and MV analog-digital conversion circuits. We propose a SPICE model to describe the behavior of the MOSFET based SE turnstile. We simulate the performances of the proposed gates. The MV logic gates have small number of transistors and low power dissipations.

Compact voltage-mode multi-valued literal gate using nanoscale ballistic MOSFETs

A CMOS voltage-mode multi-valued literal gate is presented. The ballistic electron transport characteristic of nanoscale MOSFETs is smartly used to compactly achieve universal radix-4 literal operations. The proposed literal gates have small numbers of transistors and low power dissipations, which makes them promising for future nanoscale multi-valued circuits. The gates are simulated by HSPICE.

A Fully Integrated 900-MHz Passive RFID Transponder Front End With Novel Zero-Threshold RF-DC Rectifier

This paper presents a fully integrated CMOS analog front end for a passive 900-MHz radio-frequency identification (RFID) transponder. The power supply in this front end is generated from the received RF electromagnetic energy by using an RF-dc voltage rectifier. In order to improve the compatibility with standard CMOS technology, Schottky diodes in conventional RF-dc rectifiers are replaced by diode-connected MOS transistors with zero threshold. Meanwhile, theoretical analyses for the proposed rectifier are provided and verified by both simulation and measurement results. The design considerations of the pulsewidth-modulation (PWM) demodulator and the backscatter modulator in the front end are also discussed for low-power applications. The proposed front end is implemented in a 0.35-mu m 2P4M CMOS technology. The whole chip occupies a die area of 490 x 780 mu m(2) and consumes only 2.1 mu W in reading mode under a self-generated 1.5-V supply voltage. The measurement results show that the proposed rectifier can properly operate with a - 14.7-dBm input RF power at a power conversion efficiency of 13.0%. In the proposed RFID applications, this sensitivity corresponds to 10.88-m communication distance at 4-W equivalent isotropically radiated power from a reader base station.

Novel folding large-scale optical switch matrix with total internal reflection mirrors on silicon-on-insulator by anisotropy chemical etching

A compact optical switch matrix was designed, in which light circuits were folded by total internal reflective (TIR) mirrors. Two key elements, 2 x 2 switch and TIR mirror, have been fabricated on silicon-on-insulator wafer by anisotropy chemical etching. The 2 x 2 switch showed very low power consumption of 140 mW and a very high speed of 8 +/- 1 mus. An improved design for the TIR mirror was developed, and the fabricated mirror with smooth and vertical reflective facet showed low excess loss of 0.7 +/- 0.3 dB at 1.55 mum.

Mode analysis and Q-factor enhancement due to mode coupling in rectangular resonators

Modes in rectangular resonators are analyzed and classified according to symmetry properties, and quality factor (Q-factor) enhancement due to mode coupling is observed. In the analysis, mode numbers p and q are used to denote the number of wave nodes in the direction of two orthogonal sides. The even and odd mode numbers correspond to symmetric and antisymmetric field distribution relative to the midlines of sides, respectively. Thus, the modes in a rectangle resonator can be divided into four classes according to the parity of p and q. Mode coupling between modes of different classes is forbidden; however, anti-crossing mode coupling between the modes in the same class exists and results in new modes due to the combination of the coupled modes. One of the combined modes has very low power loss and high Q-factor based on far-field emission of the analytical field distribution, which agrees well with the numerical results of the finite-difference time-domain (FDTD) simulation. Both the analytical and FDTD results show that the Q-factors of the high Q-factor combined modes are over one order larger than those of the original modes. Furthermore, the general condition required to achieve high-Q modes in the rectangular resonator is given based on the analytical solution.

Novel hybrid voltage controlled ring oscillators using single electron and MOS transistors

This paper proposes two kinds of novel hybrid voltage controlled ring oscillators (VCO) using a single electron transistor (SET) and metal-oxide-semiconductor (MOS) transistor. The novel SET/MOS hybrid VCO circuits possess the merits of both the SET circuit and the MOS circuit. The novel VCO circuits have several advantages: wide frequency tuning range, low power dissipation, and large load capability. We use the SPICE compact macro model to describe the SET and simulate the performances of the SET/MOS hybrid VCO circuits by HSPICE simulator. Simulation results demonstrate that the hybrid circuits can operate well as a VCO at room temperature. The oscillation frequency of the VCO circuits could be as high as 1 GHz, with a -71 dBc/Hz phase noise at 1 MHz offset frequency. The power dissipations are lower than 2 uW. We studied the effect of fabrication tolerance, background charge, and operating temperature on the performances of the circuits.

Submicrosecond rearrangeable nonblocking silicon-on-insulator thermo-optic 4 X 4 switch matrix

A rearrangeable nonblocking silicon-on-insulator-based thermo-optic 4 X 4 switch matrix is designed and fabricated. A spot-size converter is integrated to reduce the insertion loss, and a new driving circuit is designed to improve the response speed. The insertion loss is less than 10 dB, and the response time is 950 us. (c) 2007 Optical Society of America