997 resultados para Higgs physics


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A report is presented of the XIIth International Workshop on Positron and Positronium Physics (Sandbjerg, Denmark, 19-21 July 2003). This workshop covered positron and positronium interactions with atoms, molecules and condensed matter systems. One key development reported was the first creation in the laboratory of low-energy antihydrogen atoms. Facets of positron-electron many-body systems were also considered, including the positronium molecule and BEC gases of positronium atoms. Aspects of the future of the field were discussed, including the development of new theoretical and experimental capabilities.

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This paper describes the deployment on GPUs of PROP, a program of the 2DRMP suite which models electron collisions with H-like atoms and ions. Because performance on GPUs is better in single precision than in double precision, the numerical stability of the PROP program in single precision has been studied. The numerical quality of PROP results computed in single precision and their impact on the next program of the 2DRMP suite has been analyzed. Successive versions of the PROP program on GPUs have been developed in order to improve its performance. Particular attention has been paid to the optimization of data transfers and of linear algebra operations. Performance obtained on several architectures (including NVIDIA Fermi) are presented.

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Birds are capable of true navigation, the ability to return to a known goal from a place they have never visited before. This is demonstrated most spectacularly during the vast migratory journeys made by these animals year after year, often between continents and occasionally global in nature. However, it remains one of the great unanswered questions in science, despite more than 50 years of research in this field. Nevertheless, the study of true navigation in birds has made significant advances in the previous 20 years, in part thanks to the integration of many disciplines outside its root in behavioural biology, to address questions of neurobiology, molecular aspects, and the physics of sensory systems and environmental cues involved in bird navigation, often involving quantum physics. However, true navigation remains a controversial field, with many conflicting and confusing results making interpretation difficult, particularly for those outside or new to the field. Unlike many general texts on migration, which avoid discussion of these issues, this review will present these conflicting findings and assess the state of the field of true navigation during bird migration.

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A method has been invented for determining nanoscale variations in the distribution of electric charge on surfaces. It has so far been used to examine specific inorganic materials, but could find widespread applications in imaging.

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The fabrication and electrical characterization of Schottky junction diodes have been extensively researched for three-quarters of a century since the original work of Schottky in 1938. This study breaks from the highly standardized regime of such research and provides an alternative methodology that prompts novel, more efficient applications of the adroit Schottky junction in areas such as chemical and thermal sensing. The core departure from standard Schottky diode configuration is that the metal electrode is of comparable or higher resistance than the underlying semiconductor. Further, complete electrical characterization is accomplished through recording four-probe resistance-temperature (R-D-T) characteristics of the device, where electrical sourcing and sensing is done only via the metal electrode and not directly through the semiconductor. Importantly, this results in probing a nominally unbiased junction while eliminating the need for an Ohmic contact to the semiconductor. The characteristic R-D-T plot shows two distinct regions of high (metal) and low (semiconductor) resistances at low and high temperatures, respectively, connected by a crossover region of width, DT, within which there is a large negative temperature coefficient of resistance. The R-D-T characteristic is highly sensitive to the Schottky barrier height; consequently, at a fixed temperature, R-D responds appreciably to small changes in barrier height such as that induced by absorption of a chemical species (e.g., H-2) at the interface. A theoretical model is developed to simulate the R-D-T data and applied to Pd/p-Si and Pt/p-Si Schottky diodes with a range of metal electrode resistance. The analysis gives near-perfect fits to the experimental R-D-T characteristics, yielding the junction properties as fit parameters. The modelling not only helps elucidate the underlying physics but also helps to comprehend the parameter space essential for the discussed applications. Although the primary regime of application is limited to a relatively narrow range (DT) for a given type of diode, the alternative methodology is of universal applicability to all metal-semiconductor combinations forming Schottky contacts. (C) 2015 AIP Publishing LLC.