Micromodification of element distribution in glass using femtosecond laser irradiation

We report micromodification of Eu element distribution in a silicate glass with femtosecond laser irradiation. Elemental analysis shows that the content of Eu decreased at the focal point and increased in a ring-shaped region around the focal point, which indicates migration of Eu ions has been induced by the femtosecond laser irradiation. Confocal fluorescence spectra demonstrate that the fluorescence intensity of Eu3+ ions increased by 20% in the laser-induced, Eu-enriched, ring-shaped region compared with that for nonirradiated glass. The mechanism for the laser induced change in fluorescence properties of Eu3+ has been investigated. (C) 2009 Optical Society of America

Standing electron plasma wave mechanism of void array formation inside glass by femtosecond laser irradiation

We investigate the mechanism of formation of periodic void arrays inside fused silica and BK7 glass irradiated by a tightly focused femtosecond (fs) laser beam. Our results show that the period of each void array is not uniform along the laser propagation direction, and the average period of the void array decreases with increasing pulse number and pulse energy. We propose a mechanism in which a standing electron plasma wave created by the interference of a fs-laser-driven electron wave and its reflected wave is responsible for the formation of the periodic void arrays.

Precipitation of nanocrystals in glasses by electron irradiation: An alternative path to form glass ceramics?

This letter demonstrates an alternative method to form gallium silicate glass ceramics using high-energy electron irradiation. Compared with glass ceramics obtained from the conventional thermal treatment method, the distribution and crystal sizes of the precipitated Ga2O3 nanoparticles are the same. An advantage of this method is that the spatial distribution of the precipitated nanoparticles can be easily controlled. However, optically active dopants Ni2+ ions do not participate in the precipitation during electron irradiation. (c) 2007 American Institute of Physics.

Part I. Kinetics of coarsening of the gamma-prime precipitate in nickel-silicon alloys. Part II. Rate of crystallization of an amorphous Fe-P-C alloy

The coarsening kinetics of Ni₃ Si(γ') precipitate in a binary Ni-Si alloy containing 6.5 wt. % silicon was studied by magnetic techniques and transmission electronmicroscopy. A calibration curve was established to determine the concentration of silicon in the matrix. The variation of the Si content of the Ni-rich matrix as a function of time follows Lifshitz and Wagner theory for diffusion controlled coarsening phenomena. The estimated values of equilibrium solubility of silicon in the matrix represent the true coherent equilibrium solubilities.

The experimental particle-size distributions and average particle size were determined from dark field electron micrographs. The average particle size varies linearly with t^-1/3 as suggested by Lifshitz and Wagner. The experimental distributions of particle sizes differ slightly from the theoretical curve at the early stages of aging, but the agreement is satisfactory at the later stages. The values of diffusion coefficient of silicon, interfacial free energy and activation energy were calculated from the results of coarsening kinetics. The experimental value of effective diffusion coefficient is in satisfactory agreement with the value predicted by the application of irreversible the rmodynamics to the process of volume constrained growth of coherent precipitate during coarsening. The coherent γ' particles in Ni-Sialloy unlike those in Ni-Al and Ni-Ti seem to lose coherency at high temperature. A mechanism for the formation of semi-coherent precipitate is suggested.

Beta and gamma vibrational bands in deformed nuclei

Energies and relative intensities of gamma transitions in ¹⁵²Sm, ¹⁵²Gd, ¹⁵⁴Gd, ¹⁶⁶Er, and ²³²U following radioactive decay have been measured with a Ge(Li) spectrometer. A peak fitting program has been developed to determine gamma ray energies and relative intensities with precision sufficient to give a meaningful test of nuclear models. Several previously unobserved gamma rays were placed in the nuclear level schemes. Particular attention has been paid to transitions from the beta and gamma vibrational bands, since the gamma ray branching ratios are sensitive tests of configuration mixing in the nuclear levels. As the reduced branching ratios depend on the multipolarity of the gamma transitions, experiments were performed to measure multipole mixing ratios for transitions from the gamma vibrational band. In ¹⁵⁴Gd, angular correlation experiments showed that transitions from the gamma band to the ground state band were predominantly electric quadrupole, in agreement with the rotational model. In ²³²U, the internal conversion spectrum has been studied with a Si(Li) spectrometer constructed for electron spectroscopy. The strength of electric monopole transitions and the multipolarity of some gamma transitions have been determined from the measured relative electron intensities.

The results of the experiments have been compared with the rotational model and several microscopic models. Relative B(E2) strengths for transitions from the gamma band in ²³²U and ¹⁶⁶Er are in good agreement with a single parameter band mixing model, with values of z₂= 0.025(10) and 0.046(2), respectively. Neither the beta nor the gamma band transition strengths in ¹⁵²Sm and ¹⁵⁴Gd can be accounted for by a single parameter theory, nor can agreement be found by considering the large mixing found between the beta and gamma bands. The relative B(E2) strength for transitions from the gamma band to the beta band in ²³²U is found to be five times greater than the strength to the ground state band, indicating collective transitions with strength approximately 15 single particle units.

Two-dimensional performance of uniform irradiation with the use of an edge-softened lens array and spectral dispersion

A lens array composed of edge-softened elements is used to improve on-target irradiation uniformity in the Shenguang II Laser Facility, with which a Fresnel pattern of suppressed diffraction peaks is obtained. Additional uniformity can be reached by reducing short-wavelength interference speckles inside the pattern when the technique of smoothing by spectral dispersion is also used. Two-dimensional performance of irradiation is simulated and the results indicate that a pattern of steeper edges and a flat top can be achieved with this joint technique. (c) 2007 Optical Society of America.

Magnetic field modulated direct overwrite with pulsed laser irradiation for TbFeCo magneto-optical disks

WE have designed a dual-beam magneto-optical (MO) storage system to test the dynamic storage properties of MO disks. The characteristics of this dual-beam system are demonstrated. Magnetic field modulated direct overwrite, which is a promising technique for highspeed MO storage, is realized on TbFeCo MO disks with this dual-beam MO system. The effect of light intensity, magnetic field intensity, and linear velocity of the disk and the modulating frequency variation on carrier-to-noise ratio is investigated. (C) 1997 Society of Photo-Optical Instrumentation Engineers.

Femtosecond laser pulse irradiation of Sb-rich AgInSbTe films: Scanning electron microscopy and atomic force microscopy investigations

The single-layer and multilayer Sb-rich AgInSbTe films were irradiated by a single femtosecond laser pulse with the duration of 120 fs. The morphological feature resulting from the laser irradiation have been investigated by scanning electron microscopy and atom force microscopy. For the single-layer film, the center of the irradiated spot is a dark depression and the border is a bright protrusion; however, for the multilayer film, the center morphology changes from a depression to a protrusion as the energy increases. The crystallization threshold fluence of the single-layer and the multilayer films is 46.36 mJ/cm(2), 63.74 mJ/cm(2), respectively.

Morphological characteristics of amorphous Ge2Sb2Te5 films after a single femtosecond laser pulse irradiation

The morphology of materials resulting from laser irradiation of the single-layer and the multilayer amorphous Ge2Sb2Te5 films using 120 fs pulses at 800 nm was observed using scanning electron microscopy and atomic force microscopy. For the single-layer film, the center of the irradiated spot is depression and the border is protrusion, however, for the multilayer film, the center morphology changes from a depression to a protrusion as the increase of the energy. The crystallization threshold fluence of the single-layer and the multilayer film is 22 and 23 mJ/cm(2), respectively. (c) 2005 Elsevier B.V. All rights reserved.

Self-formation of quasiperiodic void structure in CaF2 induced by femtosecond laser irradiation

We report the self-formation of quasiperiodic void structure with the length of several hundred micrometers inside the CaF2 crystal. The quasiperiodical voids along the propagation direction of the laser beam were formed spontaneously after the irradiation of a single femtosecond laser beam which was focused at a fixed point inside the crystal sample. The length of the void array varied with the focal depth beneath the sample surface. The possible mechanism of the self-formed void structure was discussed. (c) 2007 American Institute of Physics.

Upconversion luminescence of Ce3+ doped BK7 glass by femtosecond laser irradiation

Near-infrared to visible upconversion luminescence was observed in a multicomponent silicate (BK7) glass containing Ce3+ ions under focused infrared femtosecond laser irradiation. The emission spectra show that the upconversion luminescence comes from the 4f-5d transition of the Ce3+ ions. The relationship between the intensity of the Ce3+ emission and the pump power reveals that a three-photon absorption predominates in the conversion process from the near-infrared into the blue luminescence. The analysis of the upconversion mechanism suggests that the upconversion luminescence may come from a three-photon simultaneous absorption that leads to a population of the 5d level in which the characteristic luminescence occurs.

Three-photon-excited upconversion luminescence of niobium ions doped silicate glass by a femtosecond laser irradiation

We report on the bluish green upconversion luminescence of niobium ions doped silicate glass by a femtosecond laser irradiation. The dependence of the fluorescence intensity on the pump power density of laser indicates that the conversion of infrared irradiation to visible emission is dominated by three-photon excitation process. We suggest that the charge transfer from O-2-to Nb5+ can efficiently contribute to the bluish green emission. The results indicate that transition metal ions without d electrons play an important role in fields of optics when embedded into silicate glass matrix. (C) 2008 Optical Society of America.

Valence state change and refractive index change induced by femtosecond laser irradiation in Sm3+ doped fluoroaluminate glass

We report femtosecond laser induced valence state and refractive index change in transparent Sin(3+)-doped fluoroaluminate glass. The effect of annealing on the induced changes was studied and the thermal stability of these changes was discussed. The results show that the femtosecond laser induced valence state change is more stable than the induced refractive index change. The observed phenomenon could be applied to design the thermally erasable or stable storage medium. (c) 2007 Elsevier B.V. All rights reserved.