Tunable mechanical resonator with aluminum nitride piezoelectric

The electromechanical response of piezoelectrically-actuated AlN micromachined bridge resonators has been characterized using laser interferometry and electrical admittance measurements. We compare the response of microbridges with different dimensions and buckling (induced by the initial residual stress of the layers). The resonance frequencies are in good agreement with numerical simulations of the electromechanical behavior of the structures. We show that it is possible to perform a rough tuning of the resonance frequencies by allowing a determined amount of builtin stress in the microbridge during its fabrication. Once the resonator is made, a DC bias added to the AC excitation signal allows to fine-tune the frequency. Our microbridges yield a tuning factor of around 88 Hz/V for a 500 ?m-long microbridge.

Transport properties of CuGaSe(2)-based thin-film solar cells as a function of absorber composition

The transport properties of thin-film solar cells based on wide-gap CuGaSe(2) absorbers have been investigated as a function of the bulk [Ga]/[Cu] ratio ranging from 1.01 to 1.33. We find that (i) the recombination processes in devices prepared from absorbers with a composition close to stoichiometry ([Ga]/[Cu] = 1.01) are strongly tunnelling assisted resulting in low recombination activation energies (E(a)) of approx. 0.95 eV in the dark and 1.36 eV under illumination. (ii) With an increasing [Ga]/[Cu] ratio, the transport mechanism changes to be dominated by thermally activated Shockley-Read-Hall recombination with similar E(a) values of approx. 1.52-1.57 eV for bulk [Ga]/[Cu] ratios of 1.12-1.33. The dominant recombination processes take place at the interface between CdS buffer and CuGaSe(2) absorber independently from the absorber composition. The increase of E(a) with the [Ga]/[Cu] ratio correlates with the open circuit voltage and explains the better performance of corresponding solar cells.

Laser Shock Microformingof Thin Metal Sheets with ns Lasers

Continuous and long-pulse lasers have been used for the forming of metal sheets in macroscopic mechanical applications. However, for the manufacturing of micro-electromechanical systems (MEMS), the use of ns laser pulses provides a suitable parameter matching over an important range of sheet components that, preserving the short interaction time scale required for the predominantly mechanical (shock) induction of deformation residual stresses, allows for the successful processing of components in a medium range of miniaturization without appreciable thermal deformation.. In the present paper, the physics of laser shock microforming and the influence of the different experimental parameters on the net bending angle are presented.

Ta2O5/SiO2 insulating acoustic mirrors for AlN-based X-band BAW resonators

This work describes the performance of AlN-based bulk acoustic wave resonators built on top of insulating acoustic reflectors and operating at around 8 GHz. The acoustic reflectors are composed of alternate layers of amorphous Ta2O5and SiO2 deposited at room temperature by pulsed-DC reactive sputtering in Ar/O2 atmospheres. SiO2 layers have a porous structure that provides a low acoustic impedance of only 9.5 MRayl. Ta2O5 films exhibit an acoustic impedance of around 39.5 MRayl that was assessed by the picoseconds acoustic technique These values allow to design acoustic mirrors with transmission coefficients in the centre of the band lower than -40 dB (99.998 % of reflectance) with only seven layers. The resonators were fabricated by depositing a very thin AlN film onto an iridium bottom electrode 180 nm-thick and by using Ir or Mo layers as top electrode. Resonators with effective electromechanical coupling factors of 5.7% and quality factors at the antiresonant frequency around 600 are achieved.

Growth of AlN oriented films on insulating substrates.

This work describes the structural and piezoelectric assessment of aluminum nitride (AlN) thin films deposited by pulsed-DC reactive sputtering on insulating substrates. We investigate the effect of different insulating seed layers on AlN properties (crystallinity, residual stress and piezoelectric activity). The seed layers investigated, silicon nitride (Si3N4), silicon dioxide (SiO2), amorphous tantalum oxide (Ta2O5), and amorphous or nano-crystalline titanium oxide (TiO2) are deposited on glass plates to a thickness lower than 100 nm. Before AlN films deposition, their surface is pre-treated with a soft ionic cleaning, either with argon or nitrogen ions. Only AlN films grown of TiO2 seed layers exhibit a significant piezoelectric activity to be used in acoustic device applications. Pure c-axis oriented films, with FWHM of rocking curve of 6º, stress below 500 MPa, and electromechanical coupling factors measured in SAW devices of 1.25% are obtained. The best AlN films are achieved on amorphous TiO2 seed layers deposited at high target power and low sputtering pressure. On the other hand, AlN films deposited on Si3N4, SiO2 and TaOx exhibit a mixed orientation, high stress and very low piezoelectric activity, which invalidate their use in acoustic devices.

Airborne ultrasonic vortex generation using flexible ferroelectrets

Cellular ferroelectrets exhibit interesting electromechanical- acoustical characteristics. Their recent appearance and remarkable properties open up new possibilities for the design and development of ultrasonic transducers. In particular, the feasibility of fabricating ultrasonic vortex generators using ferroelectret films is demonstrated in this work. To this end, a transducer prototype was built by gluing the material onto a tangential-helical surface (outer diameter: 40 mm, pitch: 3.45 mm). Experimental results agree well with the theoretical estimation of the pressure and phase of the acoustic field in the near field and far field, which corroborates the potential of ferroelectrets to customize special acoustic fields. Furthermore, the proposed fabrication procedure is inexpensive and represents a new alternative for exploring and analyzing the special characteristics of acoustical helical wavefronts

Low-thickness high-quality aluminum nitride films for super high frequency solidly mounted resonators

We investigate the sputter growth of very thin aluminum nitride (AlN) films on iridium electrodes for electroacoustic devices operating in the super high frequency range. Superior crystal quality and low stress films with thicknesses as low as 160 nm are achieved after a radio frequency plasma treatment of the iridium electrode followed by a two-step alternating current reactive magnetron sputtering of an aluminum target, which promotes better conditions for the nucleation of well textured AlN films in the very first stages of growth. Solidly mounted resonators tuned around 8 GHz with effective electromechanical coupling factors of 5.8% and quality factors Q up to 900 are achieved.

Influence of Crystal Quality on the Excitation and Propagation of Surface and Bulk Acoustic Waves in Polycrystalline AlN Films

We investigate the excitation and propagation of acoustic waves in polycrystalline aluminum nitride films along the directions parallel and normal to the c-axis. Longitudinal and transverse propagations are assessed through the frequency response of surface acoustic wave and bulk acoustic wave devices fabricated on films of different crystal qualities. The crystalline properties significantly affect the electromechanical coupling factors and acoustic properties of the piezoelectric layers. The presence of misoriented grains produces an overall decrease of the piezoelectric activity, degrading more severely the excitation and propagation of waves traveling transversally to the c-axis. It is suggested that the presence of such crystalline defects in c-axis-oriented films reduces the mechanical coherence between grains and hinders the transverse deformation of the film when the electric field is applied parallel to the surface.

Piezoelectric and electroacoustic properties of Ti-doped AlN thin films as a function of Ti content

In this work we present the assessment of the structural and piezoelectric properties of Al(0.5-x)TixN0.5 compounds (titanium content menor que6% atomic), which are expected to possess improved properties than conventional AlN films, such as larger piezoelectric activity, thermal stability of frequency and temperature resistance. Al:Ti:N films were deposited from a twin concentric target of Al and Ti by reactive AC sputtering, which provided films with a radial gradient of the Ti concentration. The properties of the films were investigated as a function of their composition, which was measured by electron dispersive energy dispersive X-ray spectroscopy and Rutherford backscattering spectrometry. The microstructure and morphology of the films were assessed by X-ray diffraction and infrared reflectance. Their electroacoustic properties and dielectric constant were derived from the frequency response of BAW test resonators. Al:Ti:N films properties appear to be strongly dependent on the Ti content, which modifies the AlN wurtzite crystal structure leading to greater dielectric constant, lower sound velocities, lower electromechanical factor and moderately improved temperature coefficient of the resonant frequency.

Integrated phased array transducer for on-board structural health monitoring

Permanently bonded onto a structure, an integrated Phased Array (PhA II) transducer that can provide reliable electromechanical connection with corresponding sophisticated miniaturized ?all in one? SHM electronic device installed directly above it, without need for any interface cabling, during all aerospace structure lifecycle phases and for a huge variety of real harsh service environments of structures to be monitored is presented. This integrated PhA II transducer [1], as a key component of the PAMELA SHM? (Phased Array Monitoring for Enhanced Life Assessment) system, has two principal tasks at the same time, reliably transceive elastic waves in real aerospace service environments and serves as a reliable sole carrier or support for associated integrated on-board SHM electronic device attached above. The PhA II transducer successfully accomplished both required task throughout extensive test campaigns which included low to high temperature tests, temperature cycling, mechanical loading, combined thermo- mechanical loading and vibration resistance, etc. both with and without SHM device attached above due to RTCA DO-160F.

Simulation of wind farms in flat and complex terrain using CFD

Use of computational fluid dynamic (CFD) methods to predict the power production from wind entire wind farms in flat and complex terrain is presented in this paper. Two full 3D Navier–Stokes solvers for incompressible flow are employed that incorporate the k–ε and k–ω turbulence models respectively. The wind turbines (W/Ts) are modelled as momentum absorbers by means of their thrust coefficient using the actuator disk approach. The WT thrust is estimated using the wind speed one diameter upstream of the rotor at hub height. An alternative method that employs an induction-factor based concept is also tested. This method features the advantage of not utilizing the wind speed at a specific distance from the rotor disk, which is a doubtful approximation when a W/T is located in the wake of another and/or the terrain is complex. To account for the underestimation of the near wake deficit, a correction is introduced to the turbulence model. The turbulence time scale is bounded using the general “realizability” constraint for the turbulent velocities. Application is made on two wind farms, a five-machine one located in flat terrain and another 43-machine one located in complex terrain. In the flat terrain case, the combination of the induction factor method along with the turbulence correction provides satisfactory results. In the complex terrain case, there are some significant discrepancies with the measurements, which are discussed. In this case, the induction factor method does not provide satisfactory results.

CFD modelling of wind farms in complex terrain

Modelling of entire wind farms in flat and complex terrain using a full 3D Navier–Stokes solver for incompressible flow is presented in this paper. Numerical integration of the governing equations is performed using an implicit pressure correction scheme, where the wind turbines (W/Ts) are modelled as momentum absorbers through their thrust coefficient. The k–ω turbulence model, suitably modified for atmospheric flows, is employed for closure. A correction is introduced to account for the underestimation of the near wake deficit, in which the turbulence time scale is bounded using a general “realizability” constraint for the fluctuating velocities. The second modelling issue that is discussed in this paper is related to the determination of the reference wind speed for the thrust calculation of the machines. Dealing with large wind farms and wind farms in complex terrain, determining the reference wind speed is not obvious when a W/T operates in the wake of another WT and/or in complex terrain. Two alternatives are compared: using the wind speed value at hub height one diameter upstream of the W/T and adopting an induction factor-based concept to overcome the utilization of a wind speed at a certain distance upwind of the rotor. Application is made in two wind farms, a five-machine one located in flat terrain and a 43-machine one located in complex terrain.