La situación de los museos españoles ante la crisis. El patrimonio implicado

La crisis como coyuntura y tránsito a una nueva situación, y el cambio social que parece conllevar, lejos de ser un fenómeno exclusivamente actual, viene acompañando a los museos españoles desde décadas atrás, debido a indecisiones, faltas de planificación, cambios políticos y de estrategias de funcionamiento. Pero será a partir de la Transición democrática, y la década de 1980, en que comenzará a fraguarse la llamada “burbuja” de los museos, que estalla bajo el “efecto Guggenheim” a finales del siglo XX, seguida de la merma de presupuestos oficiales para el sostenimiento del sistema museístico que trae como consecuencia la tan mencionada “crisis” económica desde aproximadamente 2008. El artículo examina esta situación y advierte de que el momento delicado que viven los museos en la actualidad es ocasión para replantearse su futuro y adaptarse a una nueva realidad cambiante. El Museo Etnológico de Navarra “Julio Caro Baroja” constituye un caso de adaptación a tales circunstancias.

Nanoindentation Relaxation Study and Micromechanics of Cement-Based Materials

Ce travail évalue le comportement mécanique des matériaux cimentaires à différentes échelles de distance. Premièrement, les propriétés mécaniques du béton produit avec un bioplastifiant à base de microorganismes efficaces (EM) sont etudiées par nanoindentation statistique, et comparées aux propriétés mécaniques du béton produit avec un superplastifiant ordinaire (SP). Il est trouvé que l’ajout de bioplastifiant à base de produit EM améliore la résistance des C–S–H en augmentant la cohésion et la friction des nanograins solides. L’analyse statistique des résultats d’indentation suggère que le bioplastifiant à base de produit EM inhibe la précipitation des C–S–H avec une plus grande fraction volumique solide. Deuxièmement, un modèle multi-échelles à base micromécanique est dérivé pour le comportement poroélastique de la pâte de ciment au jeune age. L’approche proposée permet d’obtenir les propriétés poroélastiques requises pour la modélisation du comportoment mécanique partiellement saturé des pâtes de ciment viellissantes. Il est montré que ce modèle prédit le seuil de percolation et le module de Young non drainé de façon conforme aux données expérimentales. Un metamodèle stochastique est construit sur la base du chaos polynomial pour propager l’incertitude des paramètres du modèle à travers plusieurs échelles de distance. Une analyse de sensibilité est conduite par post-traitement du metamodèle pour des pâtes de ciment avec ratios d’eau sur ciment entre 0.35 et 0.70. Il est trouvé que l’incertitude sous-jacente des propriétés poroélastiques équivalentes est principalement due à l’énergie d’activation des aluminates de calcium au jeune age et, plus tard, au module élastique des silicates de calcium hydratés de basse densité.

Effect of galactose metabolising and non-metabolising strains of Streptococcus thermophilus as a starter culture adjunct on the properties of Cheddar cheese made with low or high pH at whey drainage

Cheddar cheese was made using control culture (Lactococcus lactis subsp. lactis), or with control culture plus a galactose-metabolising (Gal+) or galactose-non-metabolising (Gal-) Streptococcus thermophilus adjunct; for each culture type, the pH at whey drainage was either low (pH 6.15) or high (pH 6.45). Sc. thermophilus affected the levels of residual lactose and galactose, and the volatile compound profile and sensory properties of the mature cheese (270 d) to an extent dependent on the drain pH and phenotype (Gal+ or Gal-). For all culture systems, reducing drain pH resulted in lower levels of moisture and lactic acid, a higher concentration of free amino acids, and higher firmness. The results indicate that Sc. thermophilus may be used to diversify the sensory properties of Cheddar cheese, for example from a fruity buttery odour and creamy flavour to a more acid taste, rancid odour, and a sweaty cheese flavour at high drain pH.

Contribution à l’étude des étalements dans les argiles sensibles de la mer de Champlain- Étude des étalements de Casselman (1971) et de Saint-Luc-de-Vincennes (1986)

Ce mémoire décrit, en premier lieu, l’analyse géotechnique et géomorphologique du glissement de 1971 à Casselman, Ontario. Les caractéristiques morphologiques identifiées à l’intérieur de la cicatrice confirment qu’il s’agit d’un étalement. Le sol impliqué est une argile sensible de la mer de Champlain, normalement à légèrement surconsolidée (OCR entre 1,0 et 1,2) dont les indices de liquidité varient entre 1,0 et 2,0. La résistance au cisaillement intacte mesurée au scissomètre de chantier varie entre 50 kPa et 87 kPa. L’argile adopte un comportement anti-écrouissage (perte de 40 % de la résistance en pic) lorsque soumise à des essais de cisaillement non-drainé. Une surface de rupture quasi-horizontale à deux niveaux principaux a été identifiée à partir des sondages au piézocône réalisés à l’intérieur de la cicatrice. Les coefficients de sécurité élevés obtenus à partir de méthodes à l’équilibre limite démontrent que la rétrogression ne peut être expliquée par des méthodes d’analyses conventionnelles. La deuxième partie du mémoire présente l’application numérique du principe de rupture progressive aux étalements de Casselman (1971) et de Saint-Luc-de-Vincennes (1986). Une étude paramétrique a été réalisée afin d’évaluer l’influence de la fragilité du comportement après la résistance en pic du sol, reliée dans l’étude à une épaisseur de bande de cisaillement, ainsi que de la résistance à grande déformation, sur l’initiation et la rétrogression résultant du processus de rupture progressive. Les résultats démontrent que la résistance à grande déformation a très peu d’influence sur l’initiation du processus de rupture progressive, qui est principalement influencé par la fragilité du comportement du sol. Il a aussi été observé que la rétrogression était majoritairement influencée par la résistance à grande déformation.

Évaluation de la performance des drains et des matériaux filtrants à ralentir le colmatage et l’ensablement en sol sableux et ferreux

Au Québec, les drains installés dans les sols sableux-limoneux sont sensibles au colmatage par ensablement et/ou par ocre de fer. Dans le passé, les drains avec des pertuis inférieurs à 2 mm étaient utilisés au Québec avec un filtre tissé de 110 microns ou un filtre tricoté de 450 microns. Récemment, des drains avec des pertuis supérieurs à 2 mm ainsi qu’un filtre de 250 microns ont été introduits sur le marché mais n’ont jamais été testés. Le projet avait pour objectif de déterminer les vitesses auxquelles se feront l’ensablement et le colmatage ferrique pour différentes combinaisons de drains (pertuis de 1,8 mm et de 3 mm) et de filtres (110 μm, 250 μm et 450 μm) dans un sol sableux à Bécancour. Un dispositif expérimental en blocs complets (3) aléatoires a été utilisé. Les débits ont été mesurés à la sortie des drains de chaque parcelle et les hauteurs des nappes ont été mesurées avec un bulleur dans des puits d’observation. Le suivi du pH, du potentiel d’oxydoréduction et du contenu en Fe2+ a été réalisé dans l’eau de la nappe et celle des drains. Les drains excavés 13 mois après leur installation ne montrent que des traces de sédiments et de colmatage ferrique. Les niveaux de Fe2+ sont significativement plus faibles dans l’eau à la sortie des drains que dans l’eau de la nappe. Le processus de colmatage ferrique ne semble que commencer et son impact n’est pas mesurable au niveau des débits unitaires à la sortie des drains.

A systematic literature review of the current trends and challenges of internationalization of higher education in Latin America

This paper aims to consolidate a sample of existing academic literature on the modes, trends, risks and challenges of the internationalization of higher education in Latin America published over the last 15 years -- Following a systematic literature review methodology, it was seeking to analyze and synthesize a sample of 25 published academic articles on the specifically chosen topic -- As a consequence of this review, it was found that progress has been made on the subject and there is an awareness of the impact it has on quality, international indicators still lag far behind those of more developed regions -- The creation and implementation of accreditation and evaluations processes, the commodification of higher education and the presence of new providers and regionalization efforts were perceived as trending topics in the publications -- Risks and challenges such as lack of governmental support and brain drain, are respectively perceived by researchers as the most concerning -- Finally, an emphasis is made on the comprehensiveness that must characterize this process in order to be successful, meaning that it should “embrace all the educational processes” (Gacel-Ávila, 2007, 406)

Entre la fuga y el retorno una revisi?n del programa de Colciencias "Es tiempo de volver" 2009-2014

La problem?tica que se investig?, fue la p?rdida de capital humano como consecuencia del fen?meno de migraci?n calificada hacia pa?ses desarrollados (brain drain). La monograf?a desde la revisi?n del programa de Colciencias "Es tiempo de volver", analiz? hasta qu? punto dicho programa responde al fen?meno del "brain drain" en Colombia. Este an?lisis exploratorio y descriptivo busc? establecer la pertinencia que tiene para nuestro pa?s, la puesta en marcha de un programa de repatriaci?n para conseguir un aporte de los cient?ficos que han migrado. Se evidenci? que el proceso de implementaci?n estuvo minado por las problem?ticas nacionales, entre ellas, la politizaci?n de las entidades p?blicas; la falta de dinero para la investigaci?n la ciencia y la tecnolog?a; la exagerada cantidad de tramites; pero adem?s de ello se mostr? que el uso ineficiente de las Tecnolog?as de la Informaci?n y la Comunicaci?n Tics, la ausencia de un cargo (os) especializados, la falta de claridad en el proceso de evaluaci?n, la ausencia de referentes para el dise?o y la falta de nitidez en los compromisos adquiridos con las entidades aliadas, hicieron que el programa pereciera como una respuesta inconclusa al fen?meno brain drain. El programa "Es tiempo de volver" implica una respuesta del gobierno nacional al fen?meno. Sin embargo es claro que para consolidar procesos de investigaci?n en el pa?s, que incluyan a los cient?ficos repatriados, es necesario que este esfuerzo sea prolongado en el tiempo. Adem?s se deben explorar otro tipo de aproximaciones (revinculaci?n, conformaci?n de redes) para que las respuestas al fen?meno sean efectivas.

Protect your home against mosquitoes

Mosquitoes develop in water that stands for more than five days. To reduce the mosquito population around your home and property, eliminate all standing water and debris. These tips help eliminate mosquitoes: locate sites where mosquitoes breed ; drain, fill, or get rid of areas that hold water ; protect yourself from biting mosquitoes.

A III-V channel field effect transistor for non-classical CMOS: process optimisation for improved gate stack function

This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.

Planifier un développement adapté aux caractéristiques hydrographiques et biophysiques du milieu pour l’aménagement d’un quartier durable à Weedon, Québec

La municipalité de Weedon, en Estrie, a récemment acquis un terrain vacant à proximité du village. La municipalité désire un développement intégrant le concept de développement durable dans le plan d’aménagement du terrain et dans la construction des infrastructures. L’objectif général de ce travail est de recommander à la municipalité de Weedon des moyens pour adapter l’écoquartier aux caractéristiques hydrographiques et biophysiques du milieu. Premièrement, le milieu biophysique et hydrographique est caractérisé grâce à l’analyse de données géospatiales et par photointerprétation de photographies aériennes. Le potentiel de développement est analysé grâce à l’outil ArcGIS afin de déterminer les zones propices à l’urbanisation ainsi que les zones à exclure. Il est recommandé de concentrer le développement du site dans la zone n’ayant aucune contrainte et de limiter la densité des habitations dans les espaces présentant des contraintes. Selon ces suggestions, il sera possible de développer environ 40 bâtiments sur le site. Deuxièmement, les systèmes de gestion des eaux usées (le système septique individuel, le système décentralisé et le système centralisé) sont décrits en fonction de leurs avantages, de leurs inconvénients et de leurs limites. Ces points sont ensuite comparés et la création d’un arbre de décision permet de recommander le système le mieux adapté au milieu. Les zones avec contraintes de développement devraient utiliser des systèmes de traitement septiques. Pour ce qui est de la zone sans contraintes, le système de traitement septique est recommandé uniquement si la densité est égale ou inférieure à 5 unités d’habitations par hectare. Si la densité désirée par la municipalité est plus élevée pour cette zone, le raccordement au système de traitement centralisé est recommandé. Troisièmement, les mesures de gestion des eaux pluviales sont présentées selon différentes caractéristiques adaptées au site. Leur recommandation est basée sur une analyse multicritère pondérée. Les pratiques de gestion optimales qui devraient être utilisées conjointement sur le site sont la collecte et la réutilisation de l’eau de pluie pour la gestion sur le site, la noue engazonnée avec drain pour la gestion en réseau et le marais artificiel pour la gestion en fin de réseau. Les recommandations présentées dans ce travail visent à privilégier des modes de développement alternatifs à l’urbanisation classique afin d’établir les bases pour le développement d’un quartier durable à Weedon.

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In_x≥0.53Ga_1-xAs/In_0.52Al_0.48As and In_x≥0.1Ga_1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm²/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In_0.85Ga_0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L_side) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH₄)₂S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al₂O₃/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×10¹²cm^-2eV^-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I_d,sat=1.14mA/mm), double peaked transconductance (g_m=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R_on=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of I_d,sat (11×), g_m (5.5×) and R_on (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L_side) from 1μm down to 70nm improved I_d,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In_0.3Ga_0.7Sb-channel (I_d,sat=49.4mA/mm, g_m=12.3mS/mm, R_on=31.7kΩ.μm) and In_0.4Ga_0.6Sb-channel (I_d,sat=38mA/mm, g_m=11.9mS/mm, R_on=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.

Effect of oxygen on the electrical characteristics of field effect transistors formed from electrochemically deposited films of poly(3-methylthiophene)

Field effect devices have been formed in which the active layer is a thin film of poly(3-methylthiophene) grown electrochemically onto preformed source and drain electrodes. Although a field effect is present after electrochemical undoping, stable device characteristics with a high modulation ratio are obtained only after vacuum annealing at an elevated temperature, and only then if the devices are held in vacuo. The polymer is shown to be p type and the devices operate in accumulation only. The hole mobility in devices thermally annealed under vacuum is around 10 -3 cm 2 V -1 s -1. On exposure to ambient laboratory air, the device conductance increases by several orders of magnitude. This increase may be reversed by subjecting the device to a further high-temperature anneal under vacuum. Subsidiary experiments show that these effects are caused by the reversible doping of the polymer by gaseous oxygen.

Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries

PAPER Trapping phenomena in AlGaN and InAlN barrier HEMTs with different geometries S Martin-Horcajo1, A Wang1, A Bosca1, M F Romero1, M J Tadjer1,2, A D Koehler2, T J Anderson2 and F Calle1 Published 11 February 2015 • © 2015 IOP Publishing Ltd Semiconductor Science and Technology, Volume 30, Number 3 Article PDF Figures References Citations Metrics 350 Total downloads Cited by 1 articles Export citation and abstract BibTeX RIS Turn on MathJax Share this article Article information Abstract Trapping effects were evaluated by means of pulsed measurements under different quiescent biases for GaN/AlGaN/GaN and GaN/InAlN/GaN. It was found that devices with an AlGaN barrier underwent an increase in the on-resistance, and a drain current and transconductance reduction without measurable threshold voltage change, suggesting the location of the traps in the gate-drain access region. In contrast, devices with an InAlN barrier showed a transconductance and a decrease in drain associated with a significant positive shift of threshold voltage, indicating that the traps were likely located under the gate region; as well as an on-resistance degradation probably associated with the presence of surface traps in the gate-drain access region. Furthermore, measurements of drain current transients at different ambient temperatures revealed that the activation energy of electron traps was 0.43 eV and 0.38 eV for AlGaN and InAlN barrier devices, respectively. Experimental and simulation results demonstrated the influence of device geometry on the observed trapping effects, since devices with larger gate lengths and gate-to-drain distance values exhibited less noticeable charge trapping effects.

Legal Framework for Cross-Regional Networks: The Case of Services and Migration

Paper prepared by Marion Panizzon and Charlotte Sieber-Gasser for the International Conference on the Political Economy of Liberalising Trade in Services, Hebrew University of Jerusalem, 14-15 June 2010 Recent literature has shed light on the economic potential of cross-border networks. These networks, consisting of expatriates and their acquaintances from abroad and at home, provide the basis for the creation of cross-border value added chains and therewith the means for turning brain drain into brain circulation. Both aspects are potentially valuable for economic growth in the developing world. Unilateral co-development policies operating through co-funding of expatriate business ventures, but also bilateral agreements liberalising circular migration for a limited set of per-sons testify to the increasing awareness of governments about the potential, which expatriate networks hold for economic growth in developing countries. Whereas such punctual efforts are valuable, viewed from a long term perspective, these top-down, government mandated Diaspora stimulation programs, will not replace, this paper argues, the market-driven liberalisation of infrastructure and other services in developing countries. Nor will they carry, in the case of circular labour migration, the political momentum to liberalise labour market admission for those non-nationals, who will eventually emerge as the future transnational entrepreneurs. It will take a combination of mode 4 and infrastructure services openings-cum regulation for countries at both sides of the spectrum to provide the basis and precondition for transnational business and entrepreneurial networks to emerge and translate into cross-border, value added production chains. Two key issues are of particular relevance in this context: (i) the services sector, especially in infrastructure, tends to suffer from inefficiencies, particularly in developing countries, and (ii) labour migration, a highly complex issue, still faces disproportionately rigid barriers despite well-documented global welfare gains. Both are hindrances for emerging markets to fully take advantage of the potential of these cross-border networks. Adapting the legal framework for enhancing the regulatory and institutional frameworks for services trade, especially in infrastructure services sectors (ISS) and labour migration could provide the incentives necessary for brain circulation and strengthen cross-border value added chains by lowering transaction costs. This paper analyses the shortfalls of the global legal framework – the shallow status quo of GATS commitments in ISS and mode 4 particular – in relation to stimulating brain circulation and the creation of cross-border value added chains in emerging markets. It highlights the necessity of adapting the legal framework, both on the global and the regional level, to stimulate broader and wider market access in the four key ISS sectors (telecommunications, transport, professional and financial services) in developing countries, as domestic supply capacity, global competitiveness and economic diversification in ISS sectors are necessary for mobilising expatriate re-turns, both physical and virtual. The paper argues that industrialised, labour receiving countries need to offer mode 4 market access to wider categories of persons, especially to students, graduate trainees and young professionals from abroad. Further-more, free trade in semi-finished products and mode 4 market access are crucial for the creation of cross-border value added chains across the developing world. Finally, the paper discusses on the basis of a case study on Jordan why the key features of trade agreements, which promote circular migration and the creation of cross-border value added chains, consist of trade liberalisation in services and liberal migration policies.

Estenosis esofágica. Aplicación de una técnica quirúrgica. Caso clínico

Se presenta el caso clínico de un paciente que presenta estenosis esofágica tras ingesta de caústicos, con disfagia a líquidos por lo que se realizó esofagectomía transhiatal con técnica de tubo gástrico como alternativa para reemplazo esofágico con ascenso mediastinal y yeyunostomía de alimentación, luego del procedimiento presenta fístula a nivel de la anastomosis proximal cervical y derrame pleural que se drena mediante avenamiento pleural bilateral, se maneja de manera conservadora sin desfuncionalización la fistula cervical mediante dren semirígido, con cierre espontaneo y se da de alta al paciente luego de tolerar dieta