969 resultados para ZM21 carburo di silicio SiC MMC extrusion magnesium
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<正> The SiCw/6061Al composites were fabricated by squeeze casting method. Varia-tions of thermal residual stresses with quenching temperature, cooling manner, aging time and thethermal-cold cycle process in thin specimens,and the distributions of thermal residual stresses alongthe distances from the surface and changes with heating temperatnres in thick specimens were stud-ied by means of X-ray diffraction (XRD). The effects of residual stresses on the mierostructure, di-mensional stability and age-hardening behavior were studied by SEM, TEM observations, and tensiletest. The results showed that there existed macrostress, microstress and thermal mismatch stress inSiCw/Al compo-site,and the presence of microstress and thermal mismatch stress has no influenceon the measurement of macrostress, but the macrostress can affect the measured value of thermalmismatch stress. Thermal res dual stress induced during the composite fabrication process, will be further in-creased when the composite were subjected to the e
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Afonso de Ulloa, escritor espanhol, nasceu em Zamora na primeira metade do século XVl e morreu em Veneza, Itália, em 1580. Filho de Francisco de Ulloa, oficial que esteve na África com Carlos V, seguiu também a carreira das armas, estabelecendo-se depois em Veneza. Desempenhou várias missões diplomáticas, escreveu muitas obras e traduziu para o italiano, língua que conhecia tanto quanto a materna, autores espanhóis e portugueses. Quanto à obra Vita, et fatti dell' invitissimo imperatore Carlo Qvinto.. . sabe-se que foi pela primeira vez impressa em Veneza em 1560 por Vincenzo Valgrisio e que foi muitas vezes reeditada. Salvo pela época, a edição supra referenciada não oferece grande interesse artístico, mas há uma interessante gravura com a efígie de Carlos V.
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Large size bulk silicon carbide (SiC) crystals are commonly grown by the physical vapor transport (PVT) method. The PVT growth of SiC crystals involves sublimation and condensation, chemical reactions, stoichiometry, mass transport, induced thermal stress, as well as defect and micropipes generation and propagation. The quality and polytype of as-grown SiC crystals are related to the temperature distribution inside the growth chamber during the growth process, it is critical to predict the temperature distribution from the measured temperatures outside the crucible by pyrometers. A radio-frequency induction-heating furnace was used for the growth of large-size SiC crystals by the PVT method in the present study. Modeling and simulation have been used to develop the SiC growth process and to improve the SiC crystal quality. Parameters such as the temperature measured at the top of crucible, temperature measured at the bottom of the crucible, and inert gas pressure are used to control the SiC growth process. By measuring the temperatures at the top and bottom of the crucible, the temperatures inside the crucible were predicted with the help of modeling tool. SiC crystals of 6H polytype were obtained and characterized by the Raman scattering spectroscopy and SEM, and crystals of few millimeter size grown inside the crucible were found without micropipes. Expansion of the crystals were also performed with the help of modeling and simulation.
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Nuouamente tradotto di spagnuolo in italiano
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As negociações entre Portugal e Holanda a respeito da devolução dos territórios portugueses ocupados se desenvolveram ao longo de um decênio. As propostas iniciais de Portugal referiam-se aos territórios ocupados pelos holandeses na África e no Maranhão. Estão no raríssimo folheto.
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Tradotte di latino in lingua toscana, da M. Francesco Serdonati Fiorentino.